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BLSFMC/CMFO film with resistance switch effect and preparation method thereof

A resistive switching and thin film technology, applied in the field of BLSFMC/CMFO thin film and its preparation, can solve the problems of difficult to meet strong magnetoelectric coupling, practical application limitations, high remanent polarization value, etc., and achieve good chemical stability and moderate saturation magnetization. value, the effect of high insulation

Active Publication Date: 2019-01-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, BiFeO 3 The volatilization of bismuth element in thin film and part of Fe 3+ to Fe 2+ The transformation, so that more oxygen vacancies are generated in the film, resulting in BiFeO 3 Thin film has serious electric leakage phenomenon and large coercive field, it is difficult to polarize, and it is difficult to obtain high remanent polarization value, so it is limited in practical application
In addition, BiFeO 3 The presence of weak ferromagnetism in thin films makes it difficult to meet the strong magnetoelectric coupling required for next-generation memory devices and other multifunctional devices

Method used

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  • BLSFMC/CMFO film with resistance switch effect and preparation method thereof
  • BLSFMC/CMFO film with resistance switch effect and preparation method thereof
  • BLSFMC/CMFO film with resistance switch effect and preparation method thereof

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Effect test

preparation example Construction

[0035] The BLSFMC / Co 1-x mn x Fe 2 o 4 The preparation method of composite film, comprises the following steps:

[0036] Step 1: Add Co(NO 3 ) 2 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Fe(NO 3 ) 3 9H 2 O is (1-x) in molar ratio: x: 2 is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride, stirs evenly, obtains Co 1-x mn x Fe 2 o 4 Precursor;

[0037] Step 2: Coating Co on the FTO / Glass substrate by spin coating method 1-x mn x Fe 2 o 4 Precursor, get Co 1- x mn x Fe 2 o 4 Wet film, the wet film is baked at 195-200°C to obtain a dry film after uniform glue, and then annealed at 550-600°C to obtain crystalline Co 1-x mn x Fe 2 o 4 film;

[0038] Step 3: To be crystalline Co 1-x mn x Fe 2 o 4 After natural cooling of the film, the crystalline Co 1-x mn x Fe 2 o 4 Repeat step 2 on the film to reach the desired thickness, that is, to obtain Co 1-x mn x Fe 2 o 4 film;

[0039] Step 4: Bi(NO 3 ) 3 ·5H 2 O, La(NO...

Embodiment 1

[0051] Step 1, Co(NO 3 ) 2 ·6H 2 O and Fe(NO 3 ) 3 9H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1:2, and stirred evenly for 2 hours to obtain CoFe 2 o 4 Precursor, CoFe 2 o 4 The concentration of metal ions in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0052] Step 2, spin coating CoFe on FTO / Glass substrate by spin coating method 2 o 4 Precursor solution, the homogenization speed is 4000r / min, the homogenization time is 15s, and the CoFe 2 o 4 Wet film, bake the wet film at 200°C for 8 minutes to obtain a dry film, and then anneal at 600°C for 30 minutes to obtain crystalline CoFe 2 o 4 film;

[0053] Step 3, to be crystalline CoFe 2 o 4 After natural cooling of the film, the crystalline CoFe 2 o 4 Repeat step 2 on the film to achieve the desired thickness, that is, to obtain CoFe 2 o 4 film;

[0054] Step 4, th...

Embodiment 2

[0058] Step 1, Co(NO 3 ) 2 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Fe(NO 3 ) 3 9H2 O is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride with a molar ratio of 0.8:0.2:2, and stirred evenly for 2h to obtain Co 0.8 mn 0.2 Fe 2 o 4 Precursor, Co 0.8 mn 0.2 Fe 2 o 4 The concentration of metal ions in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0059] Step 2, Spin Coating Co on FTO / Glass Substrate by Spin Coating 0.8 mn 0.2 Fe 2 o 4 Precursor solution, the homogenization speed is 4000r / min, the homogenization time is 15s, and the Co 0.8 mn 0.2 Fe 2 o 4 Wet film, bake the wet film at 200°C for 8 minutes to obtain a dry film, and then anneal at 600°C for 30 minutes to obtain crystalline Co 0.8 mn 0.2 Fe 2 o 4 film;

[0060] Step 3, to be crystalline Co 0.8 mn 0.2 Fe 2 o 4 After natural cooling of the film, the crystalline Co 0.8 mn 0.2 Fe 2 o 4 ...

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Abstract

The invention provides a BLSFMC / CMFO film with a resistance switch effect and a preparation method thereof. The BLSFMC / CMFO film comprises an upper layer film and a bottom layer film which are composited together; a chemical formula of the bottom layer film is Co1-xMnxFe2O4, the bottom layer film is a distorted cubic inverse spinel structure, and a space group is Fd3m; and a chemical formula of the upper layer film is Bi0.79La0.19Sr0.03Fe0.94Mn0.04Co0.0203, the upper layer film is a distorted rhombohedral perovskite structure, and a space group is R3c, wherein x is equal to 0 to 0.8. The BLSFMC / CMFO film is prepared by adopting a sol-gel method and a layer-by-layer annealing process. By virtue of the doping for the BiFeO3 film, the ferroelectric performance is improved; and the BiFeO3 filmis composited with a CoFe2O4 magnetic layer, so that the resistance switch effect of the ferroelectric polarization-regulated ferroelectric / ferromagnetic composite film can be realized.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a BLSFMC / CMFO film with resistance switching effect and a preparation method thereof. Background technique [0002] As a new multifunctional material, multiferroic materials have broad application prospects in storage devices, sensors, and nonvolatile memories. Since the polarization reversal speed of multiferroic materials under the action of an external field is very fast, usually reaching two ns levels, ferroelectric memory (FeRAM) has the advantage of high-speed reading and writing. In addition, since the ferroelectric material itself is a highly insulating dielectric material, no large current passes through the material itself during the reading and writing process, and the material has excellent fatigue resistance, and the reading and writing times can reach 10 14 above. BiFeO 3 (BFO for short) is currently the only multiferroic material that exists both ferroelectrici...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417
Inventor 谈国强刘云郭美佑薛敏涛任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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