39results about How to "Low defect content" patented technology

The invention provides a graphene dispersing agent as shown in a formula (I), a formula (II) or a formula (III) in the Specification. The graphene dispersing agent consists of a naphthalene tetracarboxylic acid bisimide unit, an anion group and an alkyl chain. Firstly, the naphthalene tetracarboxylic acid bisimide unit and graphene have strong attraction to each other, so that the whole molecules can be combined with the graphene; secondly, the anion group has excellent water solubility, so that the combined object of the molecules and the graphene can be fully dispersed in water; moreover, the alkyl chain can be used for separating the naphthalene tetracarboxylic acid bisimide unit from the anion group, so that the naphthalene tetracarboxylic acid bisimide unit and the anion group can act independently. Therefore, through the combination of the naphthalene tetracarboxylic acid bisimide unit, the anion group and the alkyl chain, the graphene dispersing agent provided by the invention has excellent graphene dispersing capability; the graphene prepared by using the graphene dispersing agent and adopting an ultrasonic method is not subjected to the oxidation-reduction process, so that the flaw content is low, and the preparation cost is low.

The invention discloses a method for improving up-conversion luminescence intensity of rare earth ion doped inorganic fluoride. According to the method, pre-synthesized rare earth doped inorganic fluoride is mixed with a solution containing alkali metal cations and fluoride ions, an obtained mixture is subjected to a sufficient reaction at a high temperature, the alkali metal cations and the fluoride ions added to the solution all participate in material modification, luminescence quenching centers in the inorganic fluoride can be reduced, and the up-conversion luminescence intensity and the quantum efficiency of the rare earth ion doped inorganic fluoride can be improved greatly.

The present invention provides a semiconductor device and a formation method thereof. The formation method comprises the steps of: providing a base, wherein the base comprises a substrate and a germanium-silicon layer located on the substrate; performing oxidation treatment of the germanium-silicon layer, and forming an oxygen-containing germanium-silicon layer on the germanium-silicon layer; performing reduction treatment of the surface of the germanium-silicon layer, and reducing the germanium content in the oxygen-containing germanium-silicon layer; after the reduction treatment, forming ahigh k-gate medium layer on the oxygen-containing germanium-silicon layer; and forming a metal gate on the high k-gate medium layer. The semiconductor device and the formation method thereof improve the interface performances between a germanium-silicon channel region and the high k-gate medium layer and improve the quality of the formed high k-gate medium layer so as to improve the electrical properties of the formed semiconductor device.

The invention provides a BLSFMC / CMFO film with a resistance switching effect and a preparation method thereof, comprising an upper film and a bottom film compounded together; the chemical formula of the bottom film is Co 1‑ x mn x Fe 2 o 4 , which is a twisted cubic inverse spinel structure, the space group is Fd3m; the chemical formula of the upper layer is Bi 0.79 La 0.18 Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 , which is a distorted rhombohedral perovskite structure, space group R3c; wherein, x=0˜0.8. It is prepared by sol-gel method and layer-by-layer annealing process. The present invention through the BiFeO 3 Doping the thin film improves the ferroelectric properties, by doping BiFeO 3 Thin film composite CoFe 2 o 4 The magnetic layer realizes the resistive switching effect of the ferroelectric / ferromagnetic composite thin film regulated by ferroelectric polarization.

The invention is a six-stage chemical formation process of high-stability high-voltage anode foil. A six-stage chemical formation process for high-voltage high-voltage anode foils with high stability, including: (1) pretreatment; (2) primary chemical formation; (3) secondary chemical formation; (4) monobutyl phosphate treatment 1; (6) Four-stage chemical formation; (7) Sintered sheet treatment 1; (8) Phosphoric acid treatment 1; (9) Five-stage chemical formation; (10) Six-stage chemical formation; (11) Phosphoric acid treatment 2; (12) After (13) phosphoric acid treatment 3; (14) back-end repair 2; (15) burn-in treatment 2; (16) back-end repair 3; (17) post-treatment. The six-stage formation process of a high-stability high-voltage anode foil described in the present invention has a simple process and is easy to operate, and can produce high-stability high-voltage anode foil in batches, and the anode foil produced has high capacity, low leakage, and high bending And the multiple advantages of strong hydration resistance.