A kind of blsfmc/cmfo thin film with resistive switching effect and preparation method thereof

A technology of resistive switch and thin film, applied in the field of BLSFMC/CMFO thin film and its preparation, can solve the problems of difficult to meet strong magnetoelectric coupling, difficult to obtain, high residual polarization value, etc.
CN109111127BActive Publication Date: 2021-06-29SHAANXI UNIV OF SCI & TECH
4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHAANXI UNIV OF SCI & TECH
Publication Date
2021-06-29

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a BLSFMC / CMFO film with a resistance switching effect and a preparation method thereof, comprising an upper film and a bottom film compounded together; the chemical formula of the bottom film is Co 1‑ x mn x Fe 2 o 4 , which is a twisted cubic inverse spinel structure, the space group is Fd3m; the chemical formula of the upper layer is Bi 0.79 La 0.18 Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 , which is a distorted rhombohedral perovskite structure, space group R3c; wherein, x=0˜0.8. It is prepared by sol-gel method and layer-by-layer annealing process. The present invention through the BiFeO 3 Doping the thin film improves the ferroelectric properties, by doping BiFeO 3 Thin film composite CoFe 2 o 4 The magnetic layer realizes the resistive switching effect of the ferroelectric / ferromagnetic composite thin film regulated by ferroelectric polarization.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of functional materials, and relates to a BLSFMC / CMFO film with resistance switching effect and a preparation method thereof. Background technique

[0002] As a new multifunctional material, multiferroic materials have broad application prospects in storage devices, sensors, and nonvolatile memories. Since the polarization reversal speed of multiferroic materials under the action of an external field is very fast, usually reaching two ns levels, ferroelectric memory (FeRAM) has the advantage of high-speed reading and writing. In addition, since the ferroelectric material itself is a highly insulating dielectric material, no large current passes through the material itself during the reading and writing process, and the material has excellent fatigue resistance, and the reading and writing times can reach 10 14 above. BiFeO 3 (BFO for short) is currently the only multiferroic material that exists both ferroelectrici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More