Silicon-based solar cell

A solar cell and silicon-based technology, applied in the field of solar cells, can solve the problems of single-layer graphene with many transfer defects, few-layer graphene with small area, and not suitable for mass production, so as to facilitate electron transmission and improve light transmittance , the effect of less defects

Active Publication Date: 2018-12-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, traditional graphene / silicon solar cells use single-layer graphene or few-layer mechanically exfoliated graphene as transparent conductive electrodes, which have the following problems. First, the thickness of graphene is low and the light absorption rate is too low; , single-layer graphene has many transfer defects and low electron mobility, which is not conducive to the transmission of photoelectrons; third, the area of ​​few-layer graphene is too small to be suitable for mass production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as figure 1 As shown, by controlling the concentration of the graphene solution, an ultra-thin graphene oxide film is obtained by suction filtration on the AAO base membrane by suction filtration; , placed on the water surface with the graphene membrane facing up, such as figure 1 a and 2a; press the AAO basement membrane, as figure 2 b, AAO basement membrane begins to sink, as figure 2 c, Finally, the AAO basement membrane sinks to the bottom of the cup, and the graphene membrane (inside the dotted circle) floats on the water surface, as shown in figure 1 b and 2d.

[0024] Use a silicon chip to pick up the graphene film floating on the water surface from bottom to top, so that the graphene film is tiled on the surface of the substrate, evaporate the water in the graphene oxide film at room temperature for 30 minutes, and measure the water content of the graphene oxide film as 54wt%; the graphene oxide film after the evaporation treatment is freeze-dried, an...

Embodiment 2

[0028] By controlling the concentration of the graphene solution, the ultra-thin reduced graphene oxide film is obtained by suction filtration at the AAO base membrane by suction filtration; Place the graphene membrane facing upwards, place it on the water surface, press the edge of the AAO basement membrane, the AAO basement membrane begins to sink, and finally, the AAO basement membrane sinks to the bottom of the cup, the graphene membrane floats on the water surface, and the graphene membrane is successfully peeled off.

[0029] Use a silicon chip to pick up the graphene film floating on the water surface from bottom to top, so that the graphene film is tiled on the surface of the substrate, evaporate the water in the graphene oxide film at room temperature for 30 minutes, and measure the water content of the graphene oxide film as 67wt%; The graphene oxide film after the evaporation treatment is freeze-dried, and the graphene oxide film is detached from the silicon wafer su...

Embodiment 3

[0033] By controlling the concentration of the graphene solution, the ultra-thin reduced graphene oxide film is obtained by suction filtration at the AAO base membrane by suction filtration; Place the graphene membrane facing upwards, place it on the water surface, press the edge of the AAO basement membrane, the AAO basement membrane begins to sink, and finally, the AAO basement membrane sinks to the bottom of the cup, the graphene membrane floats on the water surface, and the graphene membrane is successfully peeled off.

[0034] Use a silicon chip to pick up the graphene film floating on the water surface from bottom to top, so that the graphene film is tiled on the surface of the substrate, evaporate the water in the graphene oxide film at room temperature for 30 minutes, and measure the water content of the graphene oxide film as 75wt%; the graphene oxide film after the evaporation treatment is freeze-dried, and the graphene oxide film is detached from the surface of the s...

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Abstract

The invention discloses a silicon-based solar cell, comprising a transparent electrode, wherein the transparent electrode is a graphene film, and the thickness is not more than 20nm. The thin film isprepared by a suction filtration method, so as to ensure the uniformity of the thin film and the stability of the device. A water transfer method is used to control the thickness of the graphene filmat a nanometer level, and the transmittance of the film is improved. During the transfer process, micro-wrinkles are introduced to increase the contact area between the film and the photosensitive layer. After high temperature treatment, the graphene defects are few and the film strength is high, which can withstand the stress change in the process of repeated folding of the flexible electrode. The whole process is simple, green and easy to operate. Comparatively speaking, the graphene film has high electron mobility and relatively low light transmittance, and the solar energy absorbance of silicon is increased by continuous reflection, and the electron holes generated by the graphene film can be separated under the action of a built-in electric field, so as to improve the light conversionefficiency.

Description

technical field [0001] The invention relates to a solar cell, in particular to a silicon-based solar cell. Background technique [0002] With the increasingly serious environmental problems, the environmental problems brought about by the uncontrolled application of fossil energy have increasingly attracted the attention of adults. People are eager to find renewable, non-polluting new energy sources to replace heavily polluting fossil energy sources. And solar energy, as a source of earth statement, has been the object of attention. Among them, the graphene / silicon solar cell is one of the applications. It uses the different work functions of graphene (4.5eV) and silicon (4.31eV) to construct a heterojunction. The valence electrons in the photons absorb the photon energy of the incident light and undergo transitions, thereby forming electron-hole pairs. Under the action of the built-in electric field, the electron-hole pairs are separated and can be transported to the ext...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/0352H01L31/0745H01L31/18H01L21/683B82Y30/00
CPCB82Y30/00H01L21/6835H01L31/028H01L31/035281H01L31/0745H01L31/1804H01L2221/68368Y02E10/547Y02P70/50
Inventor 高超彭蠡俞丹萍沈颖卡西克燕.戈坡塞米
Owner ZHEJIANG UNIV
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