350results about How to "Avoid doping" patented technology

Disclosed is an optical fiber having a silica-based core comprising an alkali metal oxide selected from the group consisting of K₂O, Na₂O, LiO₂, Rb₂O, Cs₂O and mixtures thereof in an average concentration in said core between about 50 and 500 ppm by weight, said core further comprising chlorine and fluorine, wherein the average concentration of fluorine in said core is greater than the average concentration of alkali metal oxide in said core and the average concentration of chlorine in said core is greater than the average concentration of alkali metal oxide in said core; and a silica-based cladding surrounding and directly adjacent the core. By appropriately selecting the concentration of alkali metal oxide dopant in the core and the cladding, a low loss optical fiber may be obtained.

The invention discloses a FinFET and its manufacturing method. The FinFET manufacturing method comprises the following steps: a doping punchthrough stop layer is formed inside a semiconductor substrate; a semiconductor fin is formed by the utilization of a part of the semiconductor substrate above the doping punchthrough stop layer; a gate stack across the semiconductor fin is formed, the gate stack contains a gate dielectric and a gate conductor, and the gate conductor separates from the semiconductor fin by the gate dielectric; a gate side wall which encircles the gate conductor is formed; and a source region and a drain region are formed in parts of the semiconductor fin at two sides of the gate stack. As the semiconductor fin separates from the semiconductor substrate by the doping punchthrough stop layer, a leakage current path through the semiconductor substrate between the source region and the drain region can be disconnected.

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in which these media are employed.

The invention discloses silane modified polyurethane sealing glue with quick surface dry as well as a preparation and an application thereof. The sealing glue is prepared from the following substances in parts by weight: 100 parts of silane modified polyurethane prepolymer, 40-60 parts of plasticizer, 40-120 parts of calcium carbonate, 20-50 parts of carbon black, 3-8 parts of thixotropic agent, 1-2 parts of light stabilizer, 1-2 parts of antioxidant, 1-3 parts of water absorbent, 2-4 parts of adhesion promoter and 0.2-0.5 part of catalyst. According to the invention, by dispersing the raw materials at a certain temperature and under vacuum conditions to prepare the silane modified polyurethane sealing glue product. The product is the single-component sealing glue cured at a room temperature and has a fast surface dry speed, and the surface dry time is 15-20 min; the sealing glue does not influence the assembling of parts so that the sealing glue can be applied to industrial fields including gluing, sealing and the like of automotive windscreens; the sealing glue does not need to be firstly coated in the construction process and has the advantages of higher temperature resistance, water resistance, ageing resistance and higher physical mechanics performances after being cured.

The invention discloses a fin field effect transistor (FinFET) and a manufacturing method thereof. The manufacturing method of the FinFET includes the following steps that: a first semiconductor layer is formed on a semiconductor substrate; a second semiconductor layer is formed on the first semiconductor layer; a top protection layer is formed on the second semiconductor layer; the second semiconductor layer is patterned, such that a semiconductor fin can be formed; a sidewall protection layer is formed on a side surface of the semiconductor fin; the first semiconductor layer is doped, such that a doped punch-through-stopper layer can be formed; the top protection layer and the sidewall protection layer are removed; a gate stack that spans the semiconductor fin is formed, and the gate stack includes a gate dielectric and a gate conductor, and the gate conductor and the semiconductor fin are separated from each other by the gate dielectric; a gate sidewall surrounding the gate conductor is formed; and a source region and a drain region are formed in portions of the semiconductor fin which are located at two sides of the gate stack. The semiconductor fin is separated from the semiconductor substrate through the doped punch-through-stopper layer, and therefore, the height of the semiconductor fin can be controlled with easiness, and a leakage current path which is located between the source region and the drain region and passes through the semiconductor substrate can be disconnected.

The invention discloses a catalyst for Fischer-Tropsch synthesis by using heteroatom hybridization mesoporous carbon to load cobalt base. The catalyst is characterized by comprising the following materials in percentage by weight: 10-20% of metal cobalt and 80-90% of heteroatom hybridization mesoporous carbon carrier. The catalyst disclosed by the invention has the advantages of high activity and good stability.

The invention relates to a paperboard printing device. The paperboard printing device comprises a machine frame, a printing roller and a sliding rod; the printing roller is connected with a first motor; one end of the printing roller is connected to the sliding rod; printing plates are arranged at the other end of the printing roller; the sliding rod is connected to the machine frame in a slidingmode; a sliding groove is fixedly connected to the sliding rod; a sliding block is connected in the sliding groove in a sliding mode; an ink feeding mechanism is arranged on one side of the printing roller and comprises a first ink roller and a second ink roller; the printing roller, the first ink roller and the second ink roller abut against one another in sequence; an ink tank is arranged belowthe second ink roller; an ink barrel is arranged below the ink tank; an ink feeding pipe is arranged on the ink barrel; a spray head is arranged at one end of the ink feeding pipe; a conveying mechanism is arranged below the printing roller and comprises a driving wheel, a driven wheel and a conveying belt; a driving shaft is arranged in the center of the driving wheel; an extension end is arranged on the driving shaft of the driving wheel; the extension end is connected with a push rod in a rotating mode; and the other end of the push rod is hinged to the slide block. According to the paperboard printing device, the problem of ink dripping caused by excessive ink coating in the paperboard printing process can be solved.

Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p⁺ layer on one side and an n⁺ layer on an another side, applying an antireflective coating on the p⁺ layer, removing at least a portion of the n⁺ layer, and then forming a second n⁺ layer, such that a concentration of the n-dopant in the second n⁺ layer is variable throughout a surface of the substrate.

The invention relates to a Co3O4/In2O3 heterostructure nanotube and a preparation method and application thereof. The nanotube is prepared from Co3O4 nanoparticles and In2O3 nanoparticles, wherein the particle size of the Co3O4 nanoparticles and the In2O3 nanoparticles is 10-20nm; the diameter of the nanotube is 100-200nm, and the wall thickness of the nanotube is 10-50nm. The Co3O4/In2O3 heterostructure nanotube disclosed by the invention is of a hollow tubular structure and has good visible-light catalysis activity; under the irradiation of visible light, the Co3O4/In2O3 heterostructure nanotube is used for photocatalytic oxidation degradation of methyl orange, and the degradation ratio within 3 hours can reach 95%; the preparation method is simple in step and low in cost, and the tube wall thickness of the nanotube is easy to control.

The invention relates to a method for promoting the high speed growth of a superconducting bulk material by utilizing a 45-degree rare earth BCO membrane seed crystal. The REBCO membrane with a 45-degree tetrasymmetric structure in plane inner orientation is taken as the seed crystal, and the high temperature superconducting REBCO bulk material is in homoepitaxy growth by a cold seed crystal method. The membrane material has a superheat degree more than 20K on a monocrystalline magnesia substrate, and the unique plane inner orientation can evidently increase the growth speed of the bulk material. The REBCO and an appropriate amount of RE211 are mixed, are ground and calcined for a plurality of times, are pressed into a precursor piece, the corresponding long strip REBCO membrane is arranged on the top part of the precursor piece to serve as the seed crystal, and the REBCO bulk material is prepared by a melt textured method. The method is simple, improves the production efficiency of the bulk material, and ensures that the high temperature superconducting REBCO bulk material with a large single crystal domain structure is grown at a high speed on the conditions that impurity is free and crystal lattices are matched completely.

The invention discloses a high-boiling product cracking technology in polycrystalline silicon production. The technology comprises the steps as follows: pretreatment: solid impurities and metal halides in a high-boiling product are removed and a first mixture is obtained; primary separation: the first mixture is separated at 50-150 DEG C and silicon tetrachloride and chlorosilane oligomer are obtained; cracking: the chlorosilane oligomer is cracked under the action of a catalyst and a chlorosilane mixture is obtained; secondary separation: the chlorosilane mixture is sent to a high-boiling product removal tower, the uncracked chlorosilane oligomer is removed, and single-silicon chlorosilane and noncondensable gas are obtained. According to the technology, the metal chlorides are removed, and the condition that the catalyst is deactivated due to the fact that the metal chlorides and the catalyst form complexes can be effectively prevented. The lower end of a settling tank is communicated with a socket pipe, and the socket pipe is used for leading out an oligomer mixture located on the upper layer after settlement, so that the catalytic cracking reaction of the oligomer mixture can be conducted more efficiently.

A forming method of a semiconductor structure includes the following steps: providing a substrate; forming a high k gate medium layer on the surface of the substrate; forming a sacrificial layer on the surface of the high k gate medium layer; conducting defect passivation annealing on the high k gate medium layer, wherein the defect passivation annealing is carried out in an atmosphere lacking defect passivation ions, and the defect passivation ions enter the high k gate medium layer via the sacrificial layer during the defect passivation annealing process; removing the sacrificial layer; and forming a gate electrode layer on the surface of the high k gate medium layer. According to the method, a problem of dielectric relaxation of the high k gate medium layer is overcome, the density of the high k gate medium layer and the density of an interfacial layer are increased, and thus the electrical performance of a semiconductor structure formed by the method is improved.

The invention discloses a method for large-area transfer of a two-dimensional transition metal chalcogenide film and an application thereof. The method comprises the following steps: preparing a large-area two-dimensional transition metal chalcogenide film; sequentially depositing a single-layer organic dye molecular film and a dielectric film on the surface of the transition metal chalcogenide film by adopting a Van der Waals epitaxial growth technology and an atomic layer deposition technology, and arranging a layer of polymer film; and carrying out separation to obtain a transition metal chalcogenide/single-layer organic dye molecule/dielectric/polymer composite film based on a water permeation separation principle, combining the composite film with a target substrate, and removing thepolymer film to finish transfer. The transferred two-dimensional transition metal chalcogenide film has large-area integrity and a pollution-free interface. The transferred two-dimensional transitionmetal chalcogenide/single-layer organic dye molecular film-dielectric film can be used as a channel layer and a dielectric layer of an electronic device, has extremely low electric leakage and interface state, and can reduce the working voltage of the electronic device.

Disclosed is a manufacturing method of a contact image sensor. The manufacturing method comprises the steps of providing a substrate; forming multiple trenches in the substrate; forming a doping layerat the bottoms and on the surfaces of the side walls of the trenches, wherein the doped ions in the doping layer are N type or P type ions; performing annealing treatment on the doping layer, enabling the doped ions in the doping layer to be diffused to the substrate at the bottoms and on the side walls of the trenches, and forming isolation doped wells which surround the trenches in the substrate; after the isolation doped wells are formed, forming isolation structures which are full of the trenches; and forming photodiodes in the substrate between adjacent isolation structures, wherein thephotodiodes are adjacent to the isolation doped wells. By virtue of the manufacturing method, damage of the substrate from lattice is lowered, thereby improving the performance of the manufactured contact image sensor.

The invention discloses an ultrasonic-assisted grapheme photoresist removing method. The ultrasonic-assisted grapheme photoresist removing method comprises the following steps: whirl coating and drying are carried out on grapheme growing on copper foil in a chemical vapor deposition method through polymethyl methacrylate (PMMA); FeCl3 solution is used for corroding the cooper foil below; the grapheme which is case-hardened through the PMMA is transferred to a Si-SiO2 substrate; a grapheme sample is placed into an ultrasonic generator for ultrasonic treatment; pure acetone is injected and analyzed, and the ultrasonic generator is started for cleaning; the sample is taken out after cleaning is finished, rinsed in absolute ethyl alcohol for 2-20 minutes, and then washed by deionized water for 2-20 minutes; and the sample in dried by nitrogen and stored. According to the ultrasonic-assisted grapheme photoresist removing method, dissolving of PMMA adhesive residue is accelerated effectively, cleanliness of the grapheme surface is improved, mixing of the grapheme by the substrate because of high temperature annealing is avoided, appropriate ultrasonic power and treatment time prevent damage on the grapheme, time is saved, preparation efficiency of the grapheme is improved, and the ultrasonic-assisted grapheme photoresist removing method has strong popularization and application value.

The invention relates to a production process of a crystalline silicon double-sided solar battery, comprising the following steps of: etching to enable a silicon substrate to have an etched face; manufacturing a window which accords with an electrode pattern on a backlight face of the silicon substrate; carrying out heat treatment on the silicon substrate to form a PN junction in the window; washing the silicon substrate; plating at least two layers of antireflection films on a light reflective face of the silicon substrate; plating the antireflection film on a backlight face of the silicon substrate; printing electrode slurry on a silk screen; and sintering to obtain a metal electrode so as to finish the manufacturing of a battery cell. The production process disclosed by the invention is ingenious in concept, is compatible with a conventional industrial battery production line and is easy for industrial manufacture; compared with the conventional solar battery, an electrode grid line is not arranged on the light reflective face of the double-sided solar battery so as to prevent the electrode grid line of the light reflective face from shielding sunlight; the backlight face is provided with a light trapping structure and an antireflection film layer so that the backlight face of the battery also can absorb and utilize the sunlight; and the antireflection films of the light reflective face and the backlight face can passivate the solar battery, so as to be good for improving the efficiency of the battery.

The invention relates to a processing technique for sausage. The processing technique comprises the processes of selecting materials, treating raw materials, stripping and slicing, pickling, stirring, filling sausage, airing and dewatering and packaging. The pickling process comprises the following steps: adopting a vacuum low-nitrate pickling technique for pickling, placing the treated sausage raw materials into a vacuum pickling machine, and then adding a pickling mixed solution composed of nitrite, lactic acid bacteria and salt into the vacuum pickling machine and soaking the sausage raw materials into the pickling mixed solution. The stirring process comprises the following steps: adopting a vacuum nitrosamine control technique for stirring, namely, adding stirring additive into pickled meat paste, putting into a vacuum stirring machine for stirring, uniformly mixing the meat paste, and then adding 0.3-2wt% of nitrite reductase complex enzyme preparation into the mixed meat paste and uniformly stirring. The invention has the advantages that the processing technique for sausage can reduce the addition of the nitrite and can effectively reduce the nitrite residue in the sausage.

The invention relates to a preparation method of an all aluminum doped N-type solar cell. The preparation method comprises the following steps: providing an N-type semiconductor substrate; forming an N+ layer on the front side of the N-type semiconductor substrate, and forming a silicon nitride thin film on the N+ layer; forming an all aluminum back field on the back side of the N-type semiconductor substrate; preparing a positive electrode on the silicon nitride thin film; sintering the N-type semiconductor substrate at high temperature to enable the positive electrode to be in contact with the N+ layer, and forming a P-type layer on the back side of the N-type semiconductor substrate; preparing a back electrode on the surface of the all aluminum back field; sintering the back electrode at low temperature. The preparation method has the advantages that a full back field screen printing plate is adopted to print, and a good PN node is formed through high-temperature sintering, thereby improving the photoelectricity performance on the solar cell; the back electrode is prepared by the low-temperature sintering, and the problem that the traditional silver and aluminum back electrode can only be sintered at high temperature is solved; as the sintering depth of the back electrode is small, the influence on the PN node is avoided, the subsequent assembly welding can be carried out, and the mechanical property index of the assembly processing is met.

The invention discloses a highly-efficient corn thresher facilitating feeding and discharging. The highly-efficient corn thresher comprises a fixed chassis, pulleys and fixed thread lift-drop seats, wherein the left and right ends of the fixed chassis are respectively provided with a stop nut; the upper end of the fixed chassis is provided with a conveying drum; the temporal part of the conveyingdrum is provided with a second rotating shaft; a screw conveying mechanism is arranged on the second rotating shaft; the left end of the second rotating shaft is provided with a speed reducer; the left side of the speed reducer is provided with a conveying motor; the right end of the conveying drum is provided with a discharge outlet; the upper end of the conveying drum is provided with a threshing box; and the left side of the threshing box is provided with a lift drum. The highly-efficient corn thresher provided by the invention has simple and reasonable structural design, is simple and rapid to operate in use, is used for the work of corn threshing, has high degree of automation in the process of working, saves a great amount of labor, has high threshing efficiency and dedusting effect,is convenient for feeding and discharging, and has great practicability.

The invention discloses an anti-shaking pesticide box for a plant protection unmanned aerial vehicle. An air bag extrudes a floating plate, a cavity of a liquid storage cavity is avoided, shaking is prevented and uniform pesticide spraying is ensured. One end of a telescopic pipe is connected with the middle of a top plate of a pesticide box main body; a connecting pipe is arranged in the middle of the top plate of the pesticide box main body; the telescopic pipe is connected with the connecting pipe; the other end of the telescopic pipe extends downwards; one end of a pesticide inlet pipe isarranged in the telescopic pipe; the floating plate is arranged in the pesticide box main body; the floating plate is connected with the other end of the pesticide inlet pipe; a pesticide storage cavity is formed between the floating plate and the bottom of the pesticide box main body; and the pesticide storage cavity is connected with the pesticide inlet pipe, the air bag is arranged in the pesticide box main body and located between the floating plate and the top plate of the pesticide box, an air release valve is arranged on the air bag, the air release valve extends out of the pesticide box main body, an inflation box is arranged on the pesticide box main body, one end of an inflation pipe is connected with the inflation box, and the other end of the inflation pipe penetrates through the pesticide box main body to be connected with the air bag.

The invention discloses a method for preparing longitudinal heterojunctions of single-layer transition metal chalcogenides by no-glue transfer. Firstly, fused salt is mixed with transition metal oxide powder as an evaporation source; and transition metal chalcogenides are prepared through growth of the fused salt assisted by a chemical vapor deposition method. Then, de-ionized water is used, and is contacted with the transition metal chalcogenides; the transition metal chalcogenides can float along with water; through flowing of the water, the transition metal chalcogenides are transferred to any target substrate; and the longitudinal heterojunctions and multiple layers of stacked longitudinal heterojunctions are prepared through multiple times of transfer of the transition metal chalcogenides. Any organic glue is not used as a middle auxiliary layer, so that the problem of glue remaining can be solved; and any corrosive solution cannot be used, so that the destruction and the doping of the corrosive solution to the transition metal chalcogenides can be prevented, a new method is provided for transfer of the transition metal chalcogenides and preparation of the longitudinal heterojunctions thereof, and the important significance on acceleration of the research and the application of the transition metal chalcogenides and the longitudinal heterojunctions thereof is achieved.

The invention discloses a wafer cutting process, and the process comprises the steps: providing a wafer with a longitudinal cut way and a lateral cut way on the front, attaching a grinding film on thefront surface of the wafer to perform the back surface of the wafer till the wafer is thinned to preset thickness, attaching a back film to the back surface of the thinned wafer, and attaching the wafer to a wafer holder through the back film, wherein the wafer holder is used to limit the movement of the wafer; removing the grinding film of the wafer on the wafer holder, and performing laser burning on the front surface of the wafer from which the grinding film has been removed to form a plurality of reference grooves on the front surface of the wafer, wherein the reference grooves surroundsa polygonal region; cutting the wafer according to the longitudinal and lateral cut ways, and taking down a chip according to the polygonal region. The wafer cutting process disclosed by the inventioncan accurately mark the position of a front reference point, improves the cutting accuracy of the wafer, and avoids the doping of the unqualified chip product into a qualified product.

The invention discloses an organic solid waste pretreatment system and process and a corresponding organic solid waste continuous hydrothermal treatment system and process. The organic solid waste pretreatment system comprises a weight sorting-smashing device and a ball milling device; the water weight sorting-smashing device comprises a sorting cavity and a second-stage smashing unit, separationof light materials and heavy materials can be achieved through the sorting cavity, smashing the light materials by the second-stage smashing unit is carried out to prepare primary mud, the ball milling device receives the primary mud and carries out ball milling to prepare mud containing impurities, the heavy materials separated by the sorting cavity can enter the ball milling device to be used asabrasive materials. The organic solid waste pretreatment system is simple and reasonable in structure, facilitates separation of light and heavy materials and utilization of heavy material waste, refines, homogenizes and fluidizes organic solid waste, can achieve organic solid waste synergism, high efficiency and continuous hydrothermal treatment, effectively prevents continuous hydrothermal technology blockage and the like, fully recovers heat energy in the technological process, and improves the utilization rate of organic solid waste, resource utilization of products can be realized, and obvious environment-friendly and economic benefits are obtained.