70results about How to "Avoid excessive diffusion" patented technology

This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.

A rechargeable lithium metal or lithium-ion cell comprising a cathode having a cathode active material and/or a conductive supporting structure, an anode having an anode active material and/or a conductive supporting nano-structure, a porous separator electronically separating the anode and the cathode, a highly concentrated electrolyte in contact with the cathode active material and the anode active material, wherein the electrolyte contains a lithium salt dissolved in an ionic liquid solvent with a concentration greater than 3 M. The cell exhibits an exceptionally high specific energy, a relatively high power density, a long cycle life, and high safety with no flammability.

A memory includes a phase change memory element having a memory layer of a calcogenide material and a glue layer of an alloy of the form Ti_aX_bN_c where X is selected in the group comprising silicon, aluminum, carbon, or boron, and c may be 0. The nitrogen and silicon are adapted to reduce the diffusion of titanium toward the chalcogenide layer.

Disclosed is an optical fiber having a silica-based core comprising an alkali metal oxide selected from the group consisting of K₂O, Na₂O, LiO₂, Rb₂O, Cs₂O and mixtures thereof in an average concentration in said core between about 50 and 500 ppm by weight, said core further comprising chlorine and fluorine, wherein the average concentration of fluorine in said core is greater than the average concentration of alkali metal oxide in said core and the average concentration of chlorine in said core is greater than the average concentration of alkali metal oxide in said core; and a silica-based cladding surrounding and directly adjacent the core. By appropriately selecting the concentration of alkali metal oxide dopant in the core and the cladding, a low loss optical fiber may be obtained.

This invention relates to organometallic compounds comprising at least one metal or metalloid and at least one substituted anionic 6 electron donor ligand having sufficient substitution (i) to impart decreased carbon concentration in a film or coating produced by decomposing said compound, (ii) to impart decreased resistivity in a film or coating produced by decomposing said compound, or (iii) to impart increased crystallinity in a film or coating produced by decomposing said compound. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

An insulated-gate field-effect transistor (100) provided along an upper surface of a semiconductor body contains a pair of source/drain zones (240 and 242) laterally separated by a channel zone (244). A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. Each source/drain zone includes a main portion (240M or 242M) and a more lightly doped lateral extension (240E or 242E) laterally continuous with the main portion and extending laterally under the gate electrode. The lateral extensions, which terminate the channel zone along the upper semiconductor surface, are respectively largely defined by a pair of semiconductor dopants of different atomic weights. With the transistor being an asymmetric device, the source/drain zones constitute a source and a drain. The lateral extension of the source is then more lightly doped than, and defined with dopant of higher atomic weight, than the lateral extension of the drain.

A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.

A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.

This invention relates to organometallic compounds having the formula (L₁)_yM(L₂)_z wherein M is a metal or metalloid, L₁ is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L₂ is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L₁ and L₂ is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Starved source diffusion methods for forming avalanche photodiodes (APDs) are provided for controlling the edge effect. The edge effect is controlled by reducing edge gain near the edges of an APD active region. This is accomplished by creating a sloped diffusion front near the edges of the active region. The sloped diffusion front is advantageously formed in a single doping step by using a patterned mask during doping. The patterned mask reduces the depth to which dopants diffuse in areas where it only partly covers the underlying layer. By covering more of the underlying layer nearer the edge and progressively less towards the center, the sloped diffusion front is formed. The shallower diffusion depth near the edge reduces the edge gain, and therefore the edge effect. As a result, an APD to fiber misalignment is less likely, and possibility of edge breakdown is greatly reduced.

This invention relates to organometallic compounds having the formula (L₁)M(L₂)_y wherein M is a metal or metalloid, L₁ is a substituted or unsubstituted anionic 6 electron donor ligand, L₂ is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L₁ and L₂ is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.

This invention relates to organometallic compounds represented by the formula M(NR₁R₂)_x wherein M is a metal or metalloid, R₁ is the same or different and is a hydrocarbon group or a heteroatom-containing group, R₂ is the same or different and is a hydrocarbon group or a heteroatom-containing group; R₁ and R₂ can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R₁ or R₂ of one (NR₁R₂) group can be combined with R₁ or R₂ of another (NR₁R₂) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is equal to the oxidation state of M; and wherein said organometallic compound has (i) a steric bulk sufficient to maintain a monomeric structure and a coordination number equal to the oxidation state of M with respect to anionic ligands, and (ii) a molecular weight sufficient to possess a volatility suitable for vapor deposition.; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

This invention relates to organometallic compounds having the formula L₁ML₂ wherein M is a metal or metalloid, L₁ is a substituted or unsubstituted 6 electron donor anionic ligand, and L₂ is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L₁ and L₂ are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

A photovoltaic solar cell (SZ) of improved light-to-current conversion properties is provided with nano emitters (NE) of acicular or rib-like form and are separated from each other at a uniform distance D≦√{square root over (2)}L and penetrating to a penetration depth $T\ge d_{\mathrm{HL}}-\frac{L}{2}+w$

into the semiconductor layer (HL).