Processes for the production of organometallic compounds

a technology of amidinate and compounds, which is applied in the direction of organic chemistry, ruthenium organic compounds, iron organic compounds, etc., can solve the problems of reduced surface area to volume ratio of interconnection, increased difficulty in detecting and detecting tantalum metals, and inability to deposit tantalum metals using atomic layer deposition. , to achieve the effect of improving morphology, improving thermal stability, and less diffusion
US20060229462A1Inactive Publication Date: 2006-10-12PRAXAIR TECH INC
5 Cites 16 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
PRAXAIR TECH INC
Publication Date
2006-10-12
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
Need to check novelty before this filing date? Find Prior Art

Description

FIELD OF THE INVENTION

[0001] This invention relates to processes for producing organometallic amidinate compounds, a method for producing a film or coating from the organometallic amidinate compounds, and ruthenium amidinate compounds that are hydrogen reducible and deposit in a self-limiting manner. The organometallic amidinate compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions. BACKGROUND OF THE INVENTION

[0002] In existing semiconductor devices, transistors communicate with one another via an elaborate series of copper interconnects connected through a series of metal layers above the transistor. To minimize the capacitive coupling between these interconnects, the space between is occupied by a material with a low dielectric constant (i.e., low-K materials). To prevent the diffusion of copper into this low-K material, a composite barrier is put in place. Current practices use physical vapor deposition t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More