Method for preparing transition metal chalcogenide/two-dimensional layered material interlayer heterogeneous structure through two-step chemical vapor deposition method

A chemical vapor deposition, chalcogenide technology, applied in the field of materials, can solve the problems of interface pollution, poor quality of transition metal chalcogenides, material damage, etc., and achieve the effect of avoiding pollution

Inactive Publication Date: 2017-12-08
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, transition metal chalcogenides, graphene, and boron nitride inevitably cause interfacial contamination and material damage during the transfer process, which significantly degrades the performance of the constructed heterostructures.
At the same time, this transfer method cannot achieve precise control of the torsion angle between transition metal chalcogenides and graphene and boron nitride; The small size, many defects, and uneven layer thickness lead to the poor quality of transition metal chalcogenides prepared by this method, which makes it difficult to realize its practical application; different transition metal chalcogenides prepared by one-step chemical vapor deposition method In the heterogeneous structure between compounds, it is easy to mix and dope between different elements, so that the heterogeneous structure of this proof cannot be obtained

Method used

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  • Method for preparing transition metal chalcogenide/two-dimensional layered material interlayer heterogeneous structure through two-step chemical vapor deposition method
  • Method for preparing transition metal chalcogenide/two-dimensional layered material interlayer heterogeneous structure through two-step chemical vapor deposition method
  • Method for preparing transition metal chalcogenide/two-dimensional layered material interlayer heterogeneous structure through two-step chemical vapor deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] Purchased commercial gold foils (area 1 cm × 1 cm) were washed in sodium hydroxide (0.5 mol / l) solution and deionized water for 5 minutes, then ultrasonically cleaned in acetone for 10 minutes, and dried with nitrogen. Put the cleaned gold foil into a high-temperature annealing furnace at 1000°C for pre-annealing treatment, and the annealing time is 3 hours. Long-term high-temperature pre-annealing is beneficial to the reconstruction of the surface of gold foil, thereby obtaining a larger crystal plane size. The annealed gold foil is placed in a high-temperature tube furnace, and argon (200 sccm) and hydrogen (100 sccm) are introduced into the reaction chamber to clean the high-temperature tube furnace reaction chamber and discharge residual air in the chamber. The cleaning time is 20 minutes. Then reduce the flow rate of argon (100 sccm) and hydrogen (10 sccm), and raise the temperature of the reaction chamber to 970° C., open the methane gas valve after the temperatu...

Embodiment 2

[0082]Purchased commercial gold foils (area 1 cm × 1 cm) were washed in sodium hydroxide (0.5 mol / l) solution and deionized water for 5 minutes, then ultrasonically cleaned in acetone for 10 minutes, and dried with nitrogen. Put the cleaned gold foil into a high-temperature annealing furnace at 1000°C for pre-annealing treatment, and the annealing time is 3 hours. Long-term high-temperature pre-annealing is beneficial to the reconstruction of the surface of gold foil, thereby obtaining a larger crystal plane size. The annealed gold foil was placed in a high-temperature tube furnace, and the borane ammonia and the gold foil were placed in sequence according to the sequence of the gas route from upstream to downstream, and the mass of borane ammonia was 5 mg. Turn on the vacuum pump to evacuate the vacuum in the reaction chamber to below 1Pa, and discharge the residual air in the chamber. Then argon (80sccm) and hydrogen (200sccm) were introduced into the reaction chamber, and ...

Embodiment 3

[0085] Purchased commercial gold foils (area 1 cm × 1 cm) were washed in sodium hydroxide (0.5 mol / l) solution and deionized water for 5 minutes, then ultrasonically cleaned in acetone for 10 minutes, and dried with nitrogen. Put the cleaned gold foil into a high-temperature annealing furnace at 1000°C for pre-annealing treatment, and the annealing time is 3 hours. Long-term high-temperature pre-annealing is beneficial to the reconstruction of the surface of gold foil, thereby obtaining a larger crystal plane size. The annealed gold foil is placed in a high-temperature tube furnace, and sulfur powder, tungsten oxide and gold foil are placed in sequence in the order of the gas route from upstream to downstream. The masses of sulfur powder and tungsten oxide are 100 mg and 3 mg, respectively. The distance between the tungsten oxide and the gold foil is in the range of 3 cm. Turn on the vacuum pump to evacuate the vacuum in the reaction chamber to below 1Pa, and discharge the r...

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Abstract

The invention discloses a method for preparing a transition metal chalcogenide / two-dimensional layered material interlayer heterogeneous structure through a two-step chemical vapor deposition method. The method comprises the following steps that (1) gold foil is cleaned and subjected to high-temperature pre-annealing treatment; (2) the annealed gold foil is placed in a high-temperature tube furnace, a two-dimensional layered material is grown on the gold foil through the low-pressure chemical vapor deposition method, and a two-dimensional layered material / gold foil sample is obtained after the temperature is lowered to the room temperature; (3) the two-dimensional layered material / gold foil sample is put into a second high-temperature tube furnace, and powdered sulfur, molybdenum oxides and the two-dimensional layered material / gold foil are sequentially arranged according to the order from the upstream portion to the downstream portion; (4) argon and hydrogen are pumped into a reaction chamber, and molybdenum disulfide is grown; and (5) after growing of molybdenum disulfide is finished, the molybdenum disulfide / two-dimensional layered material interlayer heterogeneous structure on the gold foil is obtained.

Description

technical field [0001] The invention belongs to the field of materials, in particular, the invention relates to the controllable preparation of transition metal chalcogen compounds such as large-area, strictly single-layer molybdenum disulfide / two-dimensional layered materials on a gold foil substrate by using a two-step chemical vapor deposition method Interlayer heterostructure. Background technique [0002] Monolayer transition metal chalcogenides (MX 2 , M=Mo, W; X=S, Se, Te) is the thinnest semiconductor two-dimensional material known. It is considered that in the post-silicon era, it can be used as a substitute for silicon crystals in the next generation of electronic and optoelectronic devices, and has the characteristics of low energy consumption and high responsiveness. Its direct bandgap characteristics and strong light-matter interaction make it have very broad application prospects in the next generation of flexible optoelectronic devices and photoelectric conv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/26C23C16/30C23C16/34C23C16/44
CPCC23C16/0209C23C16/26C23C16/305C23C16/342C23C16/44
Inventor 张艳锋史建平张哲朋周协波
Owner PEKING UNIV
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