37results about How to "Achieve epitaxial growth" patented technology

The invention provides a method for preparing belta-FeSi2 semiconductor film by flysecond pulse laser, vacuumizing pulse-laser film depositing device to an air pressure of 10<-5> to 10<-3>, using FeSi2 alloy as target material, placing the target material and a substrate in the pulse-laser film depositing device, where the target material and the substrate, mutually parallel, are 20-50mm apart from each other, heating the substrate to 20 DEG C to 700 DEG C and then keeping warm, irradiating the target material by laser beam with a peak power density of 10<12> to 10<15> W/sq cm<2>, which makes the ejective plasma is deposited on the substrate and epitaxially grows along the crystal face of the substrate to form the film. The invention is suitable for different substrates to synthesize a large-area, uniform, monophasic beta- FeSi2 semiconductor film at lower temperature in a short time, and the prepared film is provided with better light emitting and photovoltaic properties, which solves the technical difficulty in being a high quality beta-FeSi2 film needed by infrared light emitting diode and solar battery.

The invention relates to a gallium nitride-based bismuth ferrite ferroelectric thin film and a preparation method thereof. The gallium nitride-based bismuth ferrite ferroelectric thin film comprises a TiO<2> buffer layer, a strontium lanthanum manganate buffer layer and a bismuth ferrite ferroelectric thin film which are formed on a gallium nitride semiconductor thin film substrate in sequence through a pulse laser deposition technology. The gallium nitride-based bismuth ferrite ferroelectric thin film and the preparation method thereof have the following beneficial effects: the LSMO/TiO<2> dual buffer layers are adopted, so that the lattice mismatching degree between bismuth ferrite and gallium nitride is reduced; the epitaxial growth of the bismuth ferrite ferroelectric thin film on the gallium nitride semiconductor thin film is realized; the (111) single-oriented bismuth ferrite thin film is obtained; and the epitaxial integration of the bismuth ferrite ferroelectric thin film and the gallium nitride semiconductor is realized.

The invention relates to a volatile organic compound catalytic oxidation catalyst with a high chlorine poisoning resisting efficiency, and a preparation method thereof. The catalyst adopts RuO2 as anactive component, and adopts a SnyTi1-yO2 or MOx-SnyTi1-yO2 mixed metal oxide as a carrier. TiO2 is doped with Sn to realize the regulation of the crystal form of the carrier oxide, so the dispersiondegree of RuO2 on the surface of the carrier is greatly improved while constructing the tin-titanium-based catalyst carrier with a high activation performance; and the catalyst has the characteristicsof high catalytic activity to chlorine-containing volatile organic compounds, strong chlorine poisoning resistance, and high selectivity of the product to CO2, has a good removal effect on common volatile organic compounds, and can be widely used in treatment of chlorine-containing organic waste gases in the fields of pharmaceutical, organic synthesis and paint spraying.

The invention discloses an electrostatic atomization chemical vapor deposition gallium oxide film system, which belongs to the field of chemical vapor deposition material growth, and mainly solves theproblems of droplet particle size and motion control in the process of atomized vapor deposition of a gallium oxide film. The electrostatic atomization chemical vapor deposition method comprises thefollowing steps of carrying out electrostatic atomization on a gallium salt solution as a gallium source, and carrying out chemical reaction in a reaction cavity, using a loading support part in a reaction cavity as a growth area, transporting a gallium salt aqueous solution by carrier gas after electrostatic atomization, mixing with reaction gas and then transporting to the reaction cavity, and conducting a reaction in the growth area. The whole reaction cavity is of a vertical structure, a heating device is arranged on the periphery of the reaction cavity to provide required heat for reaction, a waste gas purification treatment device is arranged at the output position of the tail end of the reaction cavity, and reacted tail gas is treated by the waste gas purification treatment device.

The invention relates to the technical field of semiconductor lasers, and particularly discloses a preparation method of a distributed Bragg reflector and a vertical cavity surface emitting laser. Themethod comprises the steps: providing a substrate; and alternately growing the first refractive index layer and the second refractive index layer of the distributed Bragg reflector on the substrate in turn, wherein the lattice constant of the substrate is located between the lattice constant of the first refractive index layer and the lattice constant of the second refractive index layer. The substrate having the lattice constant between the lattice constant of the first refractive index layer and the lattice constant of the second refractive index lay is used so that the stress of the firstrefractive index layer and the second refractive index layer grown on the substrate is enabled to cancel each other, i.e. the stress caused by lattice mismatch is eliminated by using the strain compensation mode so that the growth of the strain-free Bragg reflector is realized, and the problem of warping of the epitaxial wafer is avoided.

The invention provides a heterotopic multi-metal oxide film epitaxial growth and continuous preparation method. According to the characteristics of a metal target, the initial component evaporation isperformed; after nanoparticles evaporated from the target the high vacuum state reach the substrate, the nanoparticles are deposited into an amorphous metal precursor film; after deposition, the precursor film is transported to low-pressure atmospheres with different oxygen partial pressures; and at different temperatures, crystallization and epitaxial growth are performed. By the method, co-evaporation of multi-metal elements with different melting points and sublimation temperatures is realized, the evaporation technology and conditions of the elements can be selected according to characteristics of the constituent elements, and the dynamic baseband can help realize the uniformity of the precursor component; the later oxidation treatment starts with the highly-refined nano-scale precursor, nucleation centers of later crystallization growth are many, and growth is fast and density is high; and by controlling the oxygen partial pressure, the reaction heat-treatment can be realized ata lower temperature, and then crystallization and epitaxial growth can be achieved at low temperature. The preparation method is simple.

The invention provides a nano doping structure and a preparation method thereof. The preparation method comprises the following steps of: 1) placing a nano material into a reaction chamber of an atom layer depositing system; 2) utilizing an atom layer depositing method to deposit a dopant material with the thickness of 1-2 cycles; 3) depositing a base material of a nano material with the thickness of X cycles; and 4) alternatively and circularly depositing dopants and substrate material layers obtained in the steps 2) and 3) with the thickness of Y cycles, wherein the selection of the X is determined according to an actual doping ratio; when the X is smaller, a doping ratio is larger; and the selection of the Y is determined according to the thickness of an actually-needed doping layer, and the doping layer is thicker when the Y is greater. According to the nano doping structure and the preparation method thereof, an in-situ atom layer depositing technology is adopted, a process is simple and is easy to realize, a reaction temperature is low and an applicable material range is wide.

The invention relates to the field of energy storage thin film materials, and discloses a rare earth element modified wide temperature film energy-storage capacitor and a preparation method thereof. The preparation method is characterized by adopting an ultrahigh vacuum radio frequency magnetron sputtering technology, in the high temperature and high oxygen pressure environment, by performing bombardment on a target material through a plasma to enable the particles of the target material to be deposited on a substrate, realizing epitaxial growth, and then obtaining a BHT epitaxial film. Due tocharacteristics of the radio frequency magnetron sputtering technology, the growing speed of the film is slower relatively, so that the film prepared by the preparation method is uniform in the crystal grain size, is flat in the surface of the film, has high degree of crystallization, and further enhances the energy storage feature of the ceramic target material taken as the BT-base energy storage material.

The invention discloses a flexible ferroelectric film containing a defect dipole and a manufacturing method. The film mainly comprises a mica substrate, a buffer layer CoFe2O4 film, a bottom electrode layer SrRuO3 film and a ferroelectric functional layer Pb (Zr0. 2Ti0. 8) O3 film, wherein the buffer layer CoFe2O4 film, the bottom electrode layer SrRuO3 film and the ferroelectric functional layer Pb (Zr0. 2Ti0. 8) O3 film sequentially grow on the mica substrate. In the manufacturing method, a pulse laser deposition process is adopted, and volatilization of Pb ions in the Pb (Zr0. 2Ti0. 8) O3 ferroelectric film is controlled by using different process parameters, so that Pb ion vacancies are introduced into the ferroelectric film to be combined with O vacancies to form defect dipoles. A ferroelectric domain overturning process can be effectively regulated and controlled by introducing a defect dipole into the ferroelectric functional layer, so that the change quantity of a polarization state is improved, a giant electrocaloric effect is generated near the room temperature, and the change quantity of polarization intensity before and after an external electric field is applied and removed can reach 50 [mu] C/cm < 2 >; wide application prospects are realized in the field of solid-state refrigeration.

The invention discloses silicon dioxide coated ferric oxide composite materials and a preparation method thereof. The preparation method comprises the following steps: adding Fe2O3 colloidal particles, ethanol, water, a sodium citrate solution, ammonia water and tetraethyl orthosilicate into a solution containing polyvinylpyrrolidone pentanol, standing in an environment of 30-60 DEG C, washing anddrying. According to the preparation method, a series of composite materials with various morphologies can be simply, effectively and stably prepared by changing the reagent addition amount and reaction conditions, so that an idea is provided for morphology design research of hybrid particles, and possibility is provided for exploring new nano particles and nano structures; the inherent defects of Fe2O3 magnetic particles are modified, and a silicon dioxide rod structure which is low in cost and wide in application is introduced, so that the composite structure has certain potential application value in the fields of photon/plasma devices, nano-electronics, high-efficiency conversion/energy storage, micro diagnosis systems, drug/gene transfer, hierarchical structure catalysts and the like.

The invention discloses a method for epitaxial growth of a monocrystalline barium titanate film on a germanium substrate, and belongs to the field of epitaxial preparation of monocrystalline films. The method comprises the following steps: ultrasonically cleaning a (001)-oriented Ge substrate, filling the chamber of a pulsed laser deposition system with the (001)-oriented Ge substrate, evacuatingthe chamber to the vacuum of the background, heating the substrate to 800 DEG C, maintaining a certain pressure and a certain temperature, annealing the substrate to reconstruct the surface in order to crystallize the film in the subsequent film growth process, adjusting the pressure and the temperature, controlling the temperature to be 500-800 DEG C, turning on a laser to grow a film, stopping the growth after the film grows to a certain degree, naturally cooling the substrate, introducing air into the chamber after the obtained sample is cooled to room temperature, opening the chamber, andtaking out the sample to complete growth. The method simply and cheaply realizes the epitaxial growth of the barium titanate film on Ge, and the obtained film has the characteristics of clear interface, monocrystalline epitaxial growth and smooth film surface.

The invention belongs to the technical field of the superconducting material, and particularly relates to a cubic texture Ce1-sigmaGdsigmaO2 film on a NiW alloy substrate and a preparation method thereof. The Ce1-sigmaGdsigmaO2 film is grown on the Ni-5%W alloy substrate of the cubic texture, has the thickness of 200-500nm and has a (200) preferred orientation and face-centred cubic crystal structure, and the texture is {100}(001), wherein sigma is more than or equal to 0.1 and less than or equal to 0.2. The preparation method comprises the following steps of: dissolving (CH3CO2)3Ce(III) and GdN3O9 into C2H5OOH to obtain Ce1-sigmaGdsigmaO2 precursor liquid, coating the precursor liquid onto the Ni-5%W alloy substrate in a spinning mode, and sending the spin coating substrate into a furnace tube for thermal treatment. The CGO (Ce1-sigmaGdsigmaO2) buffer layer disclosed by the invention has the face-centred cubic crystal structure, the a and b axis lattice constants of YBCO (yttrium barium copper oxide) are almost same with the semi-diagonal length of the CGO(001) surface; after a YBCO(001) surface and after the CGO(001) surface are relatively rotated for 45 degrees in an in-plane mode, good lattice match can be formed; and the epitaxial growth of a YBCO superconducting film can be realized, thereby providing a great significance for improving the superconducting performance of the superconducting material prepared with a chemical method.

The invention discloses a structure of an antimonide quantum well CMOS device and a preparation method thereof, and belongs to the technical field of microelectronics. The device structure comprises a substrate; a buffer layer arranged on the substrate; a p-channel antimonide quantum well layer and an n-channel antimonide quantum well layer which are relatively independently arranged on the buffer layer; wherein a passivation isolation layer is arranged between the p-channel antimonide quantum well layer and the n-channel antimonide quantum well layer. According to the antimonide quantum well structure provided by the invention, on one hand, the dislocation density caused by lattice mismatch can be reduced through component regulation and control, and on the other hand, the channel and the high-k gate dielectric are effectively isolated through the barrier layer, and a two-dimensional electron/hole gas is formed on the surface of the channel, so that the mobility is improved, and the performance of a device is improved. The invention further provides the preparation method of the antimonide quantum well CMOS device, and epitaxial growth of n channel and p channel materials of the same system is achieved.

The invention provides a composite micro-nano particle formula applied to the fields of dental restoration and toothpaste formulas. A composite micro-nano particle material consists of multiple particles, including calcium phosphate nanospheres (nano-CaP), calcium phosphate microspheres (micro-CaP), calcium fluoride microspheres (CaF2) and calcium hydroxide particles (Ca(OH)2). The multi-particlesystem can adapt to various oral environments caused by acid beverages. Under a damp tooth surface microenvironment, the composite micro-nano particle material can release calcium, phosphate, fluorineions and hydroxide ions so as to promote remineralization of teeth. Exposed dentinal tubules can be sealed, and enamel caries can be restored by epitaxial crystal growth after remineralization. Microstructural analysis conducted through focused ion beam (FIB) cutting and transmission electron microscopy (TEM) examination indicates that the treatment can cause seamless growth of enamels, so that the composite micro-nano particle material can have good effects on enamel mineralization and restoration.

The invention discloses a germanium multi-junction solar cell and a manufacturing method thereof. The germanium multi-junction solar cell comprises a Ge sub-cell, an InGaAs sub-cell, an InGaAsP sub-cell and an InAlGaP sub-cell which are sequentially arranged in a stacked mode. According to the germanium multi-junction solar cell and the manufacturing method thereof disclosed by the invention, the manufacturing cost of the germanium multi-junction solar cell can be reduced, the photoelectric conversion efficiency of the germanium multi-junction solar cell can be improved, and the thin film and flexibility of the germanium multi-junction solar cell can be realized.