37results about How to "Achieve epitaxial growth" patented technology

The invention discloses a method for preparing a transition metal chalcogenide / two-dimensional layered material interlayer heterogeneous structure through a two-step chemical vapor deposition method. The method comprises the following steps that (1) gold foil is cleaned and subjected to high-temperature pre-annealing treatment; (2) the annealed gold foil is placed in a high-temperature tube furnace, a two-dimensional layered material is grown on the gold foil through the low-pressure chemical vapor deposition method, and a two-dimensional layered material / gold foil sample is obtained after the temperature is lowered to the room temperature; (3) the two-dimensional layered material / gold foil sample is put into a second high-temperature tube furnace, and powdered sulfur, molybdenum oxides and the two-dimensional layered material / gold foil are sequentially arranged according to the order from the upstream portion to the downstream portion; (4) argon and hydrogen are pumped into a reaction chamber, and molybdenum disulfide is grown; and (5) after growing of molybdenum disulfide is finished, the molybdenum disulfide / two-dimensional layered material interlayer heterogeneous structure on the gold foil is obtained.

The invention relates to a system for growth of gallium oxide by means of ultrasound-assisted fog-phase transport chemical vapor deposition. An ultrasound-assisted fog-phase transport chemical vapor deposition method adopts a water-soluble gallium salt ultrasonic atomization source as a raw material and is performed in a reaction chamber; the part, having gas flow, of a confinement device portionin the reaction chamber is used as a growth region, and the whole reaction chamber is used as a horizontal structure; after being atomized by using an ultrasonic atomizer, an aqueous solution of a gallium source is transported by using inert gas (nitrogen gas) as carrier gas, is mixed with dilution gas and then enters the reaction chamber; the reaction chamber is internally provided with a gas flow confinement structure; reaction products and unreacted raw materials are absorbed with water at an output position of the rear end of the reaction chamber, and an anti-inverse-suction structure is arranged at the output position; after a reaction is finished, the exhaust gas is treated by means of an exhaust gas treatment device.

The invention discloses a high-temperature large area silicon carbide epitaxial growth device and a treatment method. The high-temperature large area silicon carbide epitaxial growth device comprises a closed working chamber made of stainless steels, a graphite reaction cavity chamber arranged in the working chamber and a heating component arranged at the periphery of the reaction cavity chamber, wherein a tray groove is arranged in the reaction cavity chamber, a tray which bears a silicon carbide substrate is arranged in the tray groove, the reaction cavity chamber is provided with a penetrating channel, and a gas inlet device and a gas outlet device are respectively arranged at two ends of the channel. During treatment, the silicon carbide substrate is put into the reaction cavity chamber and then vacuumized and heated, reaction gas is introduced into the reaction cavity chamber so as to allow epitaxial growth of the silicon carbide, and then the silicon carbide taken out. Compared with the traditional quartz tube structure, the high-temperature large area silicon carbide epitaxial growth device has a simple structure, is relatively easy to manufacture, is convenient to process and can be used for treating the silicon carbide with a larger area. In addition, according to the high-temperature large area silicon carbide epitaxial growth device disclosed by the invention, the working chamber is in a water-cooling stainless steel structure, has higher strength and is not easy to damage.

The invention relates to a method for preparing polytetrafluoroethylene (PTFE) ordered template based on temperature-controllable, pressure-controllable and friction film forming device. The device consists of a numerical control motor, a temperature control module and a pressure control module. Due to the adoption of the device, ordered PTFE templates are prepared on various rigid substrate materials such as glass, ITO and a silicon wafer, and the PTFE templates with different film thicknesses are acquired by controlling the parameters such as temperature, pressure and friction film forming speed; the templates have ordered heights, and can be used for epitaxial growth of various organic semiconductors and ferroelectric polymer films.

The invention provides a graphite substrate for improving the wavelength uniformity of an epitaxial wafer, and belongs to the technical field of semiconductors. The graphite base plate comprises a first base plate, a second base plate and an exhaust device, and the first base plate and the second base plate are both discs; the upper surface of the first substrate is provided with a plurality of circles of first grooves for accommodating substrates, the middle part of the first substrate is provided with a circular pit, and the bottom of the circular pit is provided with a plurality of air holes; the second substrate is coaxially arranged in the circular pit, and the upper surface of the second substrate is provided with a plurality of circles of second grooves for accommodating the substrate; and the exhaust device is configured to provide gas with set flow for the plurality of gas holes in different working states, so that the second substrate is suspended in the circular pit and is separated from the first substrate, and the second substrate and the first substrate rotate in the same direction or in the opposite direction at a set rotating speed. The epitaxial wafer grows on the graphite substrate provided by the invention, so that the wavelength uniformity of the epitaxial wafer growing in each groove of the graphite substrate can be improved.

The invention provides a method for preparing belta-FeSi2 semiconductor film by flysecond pulse laser, vacuumizing pulse-laser film depositing device to an air pressure of 10<-5> to 10<-3>, using FeSi2 alloy as target material, placing the target material and a substrate in the pulse-laser film depositing device, where the target material and the substrate, mutually parallel, are 20-50mm apart from each other, heating the substrate to 20 DEG C to 700 DEG C and then keeping warm, irradiating the target material by laser beam with a peak power density of 10<12> to 10<15> W / sq cm<2>, which makes the ejective plasma is deposited on the substrate and epitaxially grows along the crystal face of the substrate to form the film. The invention is suitable for different substrates to synthesize a large-area, uniform, monophasic beta- FeSi2 semiconductor film at lower temperature in a short time, and the prepared film is provided with better light emitting and photovoltaic properties, which solves the technical difficulty in being a high quality beta-FeSi2 film needed by infrared light emitting diode and solar battery.

The invention relates to a method for preparing polytetrafluoroethylene (PTFE) ordered template based on temperature-controllable, pressure-controllable and friction film forming device. The device consists of a numerical control motor, a temperature control module and a pressure control module. Due to the adoption of the device, ordered PTFE templates are prepared on various rigid substrate materials such as glass, ITO and a silicon wafer, and the PTFE templates with different film thicknesses are acquired by controlling the parameters such as temperature, pressure and friction film forming speed; the templates have ordered heights, and can be used for epitaxial growth of various organic semiconductors and ferroelectric polymer films.

The application provides an InAs / GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method and components thereof. The InAs / GaSb buffer layer includes one or more basic buffer units, each basic buffer unit includes one or more basic unit layers, and each basic unit layer includes one or more sets of alternately arranged GaSb parts and InAs parts. The silicon-based antimonide semiconductor material includes a silicon substrate and a pure gallium antimony layer, and an InAs / GaSb buffer layer is arranged between the silicon substrate and the pure gallium antimony layer. The preparation method includes: growing GaSb part and InAs part on the silicon substrate to obtain multiple basic unit layers; and then growing pure gallium antimony layer. Components, whose raw materials include InAs / GaSb buffer layer or silicon-based antimonide semiconductor material. The InAs / GaSb buffer layer provided by the application can reduce the lattice mismatch between silicon and GaSb, thereby realizing high-quality antimonide epitaxial growth.

The invention provides an InAs / GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method of the silicon-based antimonide semiconductor material, and a component. The InAs / GaSb buffer layer comprises one or more basic buffer units, wherein each basic buffer unit comprises one or more basic unit layers, and each basic unit layer comprises one or more groups of GaSb parts and InAs parts which are alternately arranged. The silicon-based antimonide semiconductor material comprises a silicon substrate and a pure gallium antimony layer, where the InAs / GaSb buffer layer is arranged between the silicon substrate and the pure gallium antimony layer. The preparation method comprises the following steps: growing the GaSb parts and the InAs parts on the silicon substrate to obtain a plurality of the basic unit layers; and then growing the pure gallium antimony layer. Raw materials of the component comprise the InAs / GaSb buffer layer or the silicon-based antimonide semiconductor material. According to the InAs / GaSb buffer layer provided by the invention, lattice mismatch between silicon and GaSb can be reduced, so high-quality antimonide epitaxial growth is realized.

The invention relates to the field of energy storage thin film materials, and discloses a rare earth element modified wide temperature film energy-storage capacitor and a preparation method thereof. The preparation method is characterized by adopting an ultrahigh vacuum radio frequency magnetron sputtering technology, in the high temperature and high oxygen pressure environment, by performing bombardment on a target material through a plasma to enable the particles of the target material to be deposited on a substrate, realizing epitaxial growth, and then obtaining a BHT epitaxial film. Due tocharacteristics of the radio frequency magnetron sputtering technology, the growing speed of the film is slower relatively, so that the film prepared by the preparation method is uniform in the crystal grain size, is flat in the surface of the film, has high degree of crystallization, and further enhances the energy storage feature of the ceramic target material taken as the BT-base energy storage material.

The invention provides a nano doping structure and a preparation method thereof. The preparation method comprises the following steps of: 1) placing a nano material into a reaction chamber of an atom layer depositing system; 2) utilizing an atom layer depositing method to deposit a dopant material with the thickness of 1-2 cycles; 3) depositing a base material of a nano material with the thickness of X cycles; and 4) alternatively and circularly depositing dopants and substrate material layers obtained in the steps 2) and 3) with the thickness of Y cycles, wherein the selection of the X is determined according to an actual doping ratio; when the X is smaller, a doping ratio is larger; and the selection of the Y is determined according to the thickness of an actually-needed doping layer, and the doping layer is thicker when the Y is greater. According to the nano doping structure and the preparation method thereof, an in-situ atom layer depositing technology is adopted, a process is simple and is easy to realize, a reaction temperature is low and an applicable material range is wide.

Provided is a method for manufacturing a group III-nitride semiconductor substrate, the method comprising: a sapphire substrate preparation step S10 of preparing a sapphire substrate that has, as a principal surface, a {10-10} plane or a surface tilted a predetermined angle in a predetermined direction from the {10-10} plane; a heat treatment step S20 of heat treating the sapphire substrate whileperforming or not performing a nitriding treatment; a buffer layer forming step S30 of forming a buffer layer on the principal surface of the sapphire substrate after the heat treatment; and a growingstep S40 of forming, on the buffer layer, a group III-nitride semiconductor layer having a growth surface oriented in a predetermined plane direction, wherein at least one among the plane direction of the principal surface of the sapphire substrate, whether or not to perform the nitriding treatment during the heat treatment, and the growth temperature in the buffer layer forming step is adjustedso that the growth surface of the group III-nitride semiconductor layer is oriented in the predetermined plane direction.

The invention relates to a preparation method of a zinc oxide based diluted magnetic semiconductor thin film and an in-situ regulation and control method of charge concentration of the zinc oxide based diluted magnetic semiconductor thin film. A composition chemical formula of the zinc oxide based diluted magnetic semiconductor thin film is Zn1-xMnxO, wherein x is more than or equal to 0 and is less than or equal to 0.75. The preparation method comprises the following step: by taking a Zn1-xMnxO ceramic block as a target material, depositing Zn1-xMnxO on a ferroelectric single crystal substrate by adopting a pulsed laser deposition technique to obtain the zinc oxide based diluted magnetic semiconductor thin film.

The invention provides a MoS2-based thin-layer ultraviolet light-emitting diode and a preparation method thereof. The MoS2-based thin-layer ultraviolet light-emitting diode comprises a substrate, an MoS2 layer, an n-type gradient Al component AlGaN layer, an AlGaN quantum well layer, a p-type gradient Al component AlGaN layer and a p electrode which are sequentially arranged from bottom to top; ann electrode is arranged on the lateral upper portion of the n-type gradient Al component AlGaN layer, and the MoS2 layer is made of a multilayer tiled MoS2 material. According to the invention, no dangling bond exists on the heteroepitaxy surface of MoS2, and the crystal quality is high. The epitaxial mode of the invention is Van der Waals epitaxy, and epitaxial growth can be realized on varioussubstrates. The MoS2-based thin-layer ultraviolet light-emitting diode is smaller in overall thickness and wide in application field.

The invention discloses a high-temperature large area silicon carbide epitaxial growth device and a treatment method. The high-temperature large area silicon carbide epitaxial growth device comprises a closed working chamber made of stainless steels, a graphite reaction cavity chamber arranged in the working chamber and a heating component arranged at the periphery of the reaction cavity chamber, wherein a tray groove is arranged in the reaction cavity chamber, a tray which bears a silicon carbide substrate is arranged in the tray groove, the reaction cavity chamber is provided with a penetrating channel, and a gas inlet device and a gas outlet device are respectively arranged at two ends of the channel. During treatment, the silicon carbide substrate is put into the reaction cavity chamber and then vacuumized and heated, reaction gas is introduced into the reaction cavity chamber so as to allow epitaxial growth of the silicon carbide, and then the silicon carbide taken out. Compared with the traditional quartz tube structure, the high-temperature large area silicon carbide epitaxial growth device has a simple structure, is relatively easy to manufacture, is convenient to process and can be used for treating the silicon carbide with a larger area. In addition, according to the high-temperature large area silicon carbide epitaxial growth device disclosed by the invention, the working chamber is in a water-cooling stainless steel structure, has higher strength and is not easy to damage.