Preparation method of ZnO-based dilute magnetic semiconductor film and its in-situ regulation method of charge concentration

A dilute magnetic semiconductor, zinc oxide-based technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of depositing dilute magnetic semiconductor films, maintaining consistency, and difficult to obtain physical properties of dilute magnetic semiconductor films.

Active Publication Date: 2017-01-25
江苏先进无机材料研究院
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  • Application Information

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Problems solved by technology

The above-mentioned methods for adjusting the charge concentration all need to prepare multiple samples, and cannot ensure that other parameters except the charge concentration are consistent. Therefore, it is difficult to obtain the intrinsic influence of the charge concentration on the physical properties of the dilute magnetic semiconductor thin film.
In addition, most of the literature reports use sapphire single crystal as the substrate of the dilute magnetic semiconductor thin film, and the results of depositing the dilute magnetic semiconductor thin film on the ferroelectric single crystal have not been reported yet.

Method used

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  • Preparation method of ZnO-based dilute magnetic semiconductor film and its in-situ regulation method of charge concentration
  • Preparation method of ZnO-based dilute magnetic semiconductor film and its in-situ regulation method of charge concentration
  • Preparation method of ZnO-based dilute magnetic semiconductor film and its in-situ regulation method of charge concentration

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preparation example Construction

[0034] The preparation method includes: high-purity Zn 1-x mn x The O ceramic block is used as the target, and pulsed laser deposition is performed on a single-sided polished (111) PMN-x′PT single crystal substrate to obtain the Zn 1-x mn x O thin film, wherein the parameters of the pulsed laser deposition technology are: put the single-side polished (111) oriented PMN-x′PT substrate into the reaction chamber of the pulsed laser deposition system, and extract the background of the pulsed laser deposition system Vacuum to ≦5×10 -4 Pa, heat the substrate to 500~600°C, then vacuum the reaction chamber to ≦5×10 -4 Pa; with high purity Zn 1-x mn x O ceramic target is used as the target material, the deposition temperature is 400-750°C, the deposition oxygen pressure is 0.001-1Pa, and the laser energy is 2-6J / cm 2 , deposition rate 1 ~ 5nm / min.

[0035] The high-purity Zn 1-x mn x The purity of O ceramic blocks is greater than 99.99%.

[0036] The purity of the deposited o...

Embodiment 1

[0049] (1) Film preparation: use high-purity (≥99.99%) Zn 0.95 mn 0.05 O ceramic block as the target, the (111) orientation 0.71PbMg polished on one side 1 / 3 Nb 2 / 3 o 3 -0.29PbTiO 3 (PMN-29PT) is placed in the reaction chamber of the pulsed laser deposition device, the background vacuum is pumped to ≦5×10-4Pa, the substrate is heated to 600°C, and the vacuum is pumped to 4×10 -4 Pa; with high purity (≥99.999%) O 2 As a reaction gas, the pressure of the reaction chamber is 0.01Pa, and the laser energy is 5J / cm 2 , the distance between substrate and target is 7cm, and thin film deposition is carried out to obtain Zn 0.95 mn 0.05 O film (here, we approximately think that the content of Mn element in the film is the same as that of the ceramic block);

[0050] (2) Electrode preparation: in Zn 0.95 mn 0.05 Gold electrodes were sputtered on the surface of the O film and the back of the PMN-29PT substrate. get as figure 1 the structure shown;

[0051] (3) Structural char...

Embodiment 2

[0056] (1) The preparation process is basically the same as in Example 1, except that the deposition oxygen pressure is 0.1Pa;

[0057] (2) Figure 5 For the prepared Zn of embodiment 2 0.95 mn 0.05 The change curve of O sheet resistance with the bipolar voltage applied on the PMN-29PT substrate is also a square shape consistent with the hysteresis loop of PMN-29PT, and the coupling mechanism of the system is the interface charge effect. The relative change of sheet resistance caused by polarization reversal of PMN-29PT substrate at room temperature is 100%;

[0058](3) Hall effect measurement result shows that the Zn prepared by embodiment 2 0.95 mn 0.05 The carrier type of O film is n-type, and the carrier concentration at room temperature is about 2.5×10 18 / cm 3 .

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Abstract

The invention relates to a preparation method of a zinc oxide based diluted magnetic semiconductor thin film and an in-situ regulation and control method of charge concentration of the zinc oxide based diluted magnetic semiconductor thin film. A composition chemical formula of the zinc oxide based diluted magnetic semiconductor thin film is Zn1-xMnxO, wherein x is more than or equal to 0 and is less than or equal to 0.75. The preparation method comprises the following step: by taking a Zn1-xMnxO ceramic block as a target material, depositing Zn1-xMnxO on a ferroelectric single crystal substrate by adopting a pulsed laser deposition technique to obtain the zinc oxide based diluted magnetic semiconductor thin film.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film materials. The invention relates to the preparation of an epitaxial zinc oxide-based dilute magnetic semiconductor thin film based on a ferroelectric single crystal and the in-situ regulation technology of the charge concentration, in particular to a technology capable of in-situ and dynamic regulation of the charge concentration in the film. Background technique [0002] Over the years, the application of information technology to the charge and spin properties of electrons has developed in parallel and independently of each other. If the charge properties and spin properties of electrons can be used in one material at the same time, many new multifunctional spintronic devices can be designed and new information processing modes can be developed to obtain faster information processing rates and higher information Storage density, which will undoubtedly bring a new look to informa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/28H01L21/363
CPCC23C14/086C23C14/28
Inventor 朱秋香郑仁奎李效民
Owner 江苏先进无机材料研究院
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