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112 results about "Bipolar voltage" patented technology

Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply

An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of either conductivity type, the first trigger contact disposed at a junction between the first well and the second well, and the second trigger contact disposed at either well.
Owner:UNIV OF CENT FLORIDA RES FOUND INC +1

Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply

An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of either conductivity type, the first trigger contact disposed at a junction between the first well and the second well, and the second trigger contact disposed at either well.
Owner:UNIV OF CENT FLORIDA RES FOUND INC +1

Shifting register unit, gate drive circuit and displayer

The invention relates to a shifting register unit, a gate drive circuit and a displayer. The shifting register unit comprises an input module, a drive module, a pull-down module and a low level maintaining module; the low level maintaining module comprises a first maintaining unit, a second maintaining unit and a positive and negative bothway polarity potential generation unit; and the positive and negative bothway polarity potential generation unit is used for generating positive and negative bothway polarity potentials in the non-gating stage of the shifting register unit and outputting the positive and negative bothway polarity potentials to the low level maintaining control end. All transistors in the shifting register unit are prevented from staying under direct-current stress; the key transistors will stay under positive and negative bipolar pulse stress polarization within a period of time; threshold voltage shifting of the key transistors is accordingly restrained; and the service life of the circuit is prolonged. In addition, positive and negative bipolar voltage polarization is achieved through fewer transistors and fewer capacitors; the circuit design complex rate is low; and the rate of finished products is high. The displayer is high in reliability and low in production cost.
Owner:PEKING UNIV SHENZHEN GRADUATE SCHOOL

Charging source for high-voltage capacitor

The invention discloses a charging source for a high-voltage capacitor. The charging source comprises a low-voltage rectifying circuit, a bridge type inverter circuit, a resonance circuit, a boosting transformer and a high-voltage rectifying circuit, wherein the low-voltage rectifying circuit is used for performing AC/DC conversion on alternating current to output direct current voltage; the bridge type inverter circuit and the resonance circuit are used for performing resonant conversion on the direct current voltage to output bipolar voltage pulse; the boosting transformer and the high-voltage rectifying circuit are used for converting the bipolar voltage pulse into unipolar voltage pulse to charge the high-voltage capacitor; the bridge type inverter circuit consists of RSD (removable storage device) switch units; and each RSD switch unit comprises an RSD heap, a reverse pick-off diode, a reverse protection diode, a first saturable magnetic switch and an RSD pre-charging circuit, and the RSD heap is formed through series connection and/or parallel connection of one or more RSD devices. The charging source for the high-voltage capacitor can effectively improve the charging efficiency of the high-voltage capacitor, shortens the charging time, and is small in size and low in cost.
Owner:彭亚斌

Handheld cortex egersimeter and cortex electrostimulation

The invention discloses a handheld cortex egersimeter and a cortex electrostimulation. In the cortex egersimeter, a parameter setting circuit and a parameter display circuit are connected with a master control chip, a control end of a bipolar voltage controlled constant current source circuit is connected with a digital-to-analog conversion output port of the master control chip, and an output end of the bipolar voltage controlled constant current source circuit is connected with one end of a stimulating electrode; an input end of a current-to-voltage conversion circuit is connected with the other end of the stimulating electrode, and an output end of the current-to-voltage conversion circuit is connected with an analog-to-digital conversion input port of the master control chip; a real pulse intensity display circuit is connected with the master control chip; an input end of a bipolar voltage generation circuit is connected with another digital-to-analog conversion output port of themaster control chip, and an output end of the bipolar voltage generation circuit is connected with the bipolar voltage controlled constant current source circuit. The method can be used for applying bidirectional pulse simulation with specific frequency, pulse width and current to cortex. The invention has low cost, is simple for operation and does not need the assistance of a computer; in addition, the cortex egersimeter has high safety coefficient and can improve the postoperative life quality of patients with functional region pathological changes.
Owner:GUANGZHOU GENERAL HOSPITAL OF GUANGZHOU MILITARY COMMAND +1

MMC-HVDC direct current transmission line fault positioning method

The invention discloses an MMC-HVDC direct-current transmission line fault positioning method, which comprises the steps of decoupling bipolar voltage through a symmetric component transformation matrix to obtain a line mode component and a zero mode component of the bipolar voltage; carrying out VMD decomposition on the line mode component and the zero mode component, and carrying out parameter alternate optimization on the modal number k and the penalty factor in the decomposition process, so as to enable the values of the modal number k and the penalty factor to be more reasonable; performing analyzing by utilizing S transformation, positioning a fault mutation point, and accurately detecting the time when the wave head of the traveling wave arrives at two sides; and achieving accuratepositioning of the fault of the high-voltage direct-current transmission line by using a fault distance measurement algorithm for eliminating the wave velocity influence. According to the method, thenumber K of modes and the penalty factor are optimized through an alternate parameter optimization method, on the basis, the VMD is used for decomposing the traveling wave signal and extracting the intrinsic mode component of the traveling wave signal, then S transformation is used for accurately positioning a fault mutation point, and finally accurate fault positioning is achieved.
Owner:LANZHOU UNIVERSITY OF TECHNOLOGY

Self-adjusting bipolar voltage source digital-to-analog converter

InactiveCN102142842ASolve technical problems that are prone to errorsDigital-analogue convertorsBipolar voltageNegative power
The invention discloses a self-adjusting bipolar voltage source digital-to-analog converter. The self-adjusting bipolar voltage source digital-to-analog converter comprises a digital-to-analog converter, a reference voltage source, an operational amplifier, a first resistor and a second resistor, wherein a reference voltage generated by the reference voltage source is connected with one end of the first resistor through a buffer; the other end of the first resistor is connected with an opposite-phase input end of the operational amplifier; the second resistor is bridged over the output end and the opposite-phase input end of the operational amplifier; the first resistor and the second resistor have the same resistance; and an alternating current of the same-phase input end of the operational amplifier is grounded; the output end of the buffer and the output end of the operational amplifier are respectively connected to the positive power supply end and the negative power supply end of the digital-to-analog converter. The self-adjusting bipolar voltage source digital-to-analog converter can generate two source digital-to-analog converter reference voltages with the same amplitude and opposite polarities by using only one reference voltage source, and has the characteristics of simple structure and high matching performance.
Owner:XIANGTAN UNIV

Dual unipolar voltage module chain and hybrid multilevel converter

The invention provides a dual unipolar voltage module chain and a hybrid multilevel converter, and belongs to the fields of a power electronic technology and power transmission and distribution. The dual unipolar voltage module chain consists of N unipolar voltage modules which are connected in series in sequence, wherein the N unipolar voltage modules comprise N1 positive electrode unipolar voltage modules and N2 negative electrode unipolar voltage modules; when a bidirectional current passes through, bipolar voltage output capability is formed; the hybrid multilevel converter based on the module chain at least comprises two same phases, wherein each phase comprises a dual unipolar voltage module chain, a three-level bridge arm and an electric reactor, wherein one port of the dual unipolar voltage module chain is connected with the midpoint of the three-level bridge arm while the other port of the dual unipolar voltage module chain is connected with one end of the electric reactor; and the other end of the electric reactor is connected with an alternating current voltage. By adoption of the dual unipolar voltage module chain and the hybrid multilevel converter, wide-range alternating current-direct current conversion can be realized at a relatively low engineering cost and in a compact occupied space; and meanwhile, high conversion efficiency, good harmonic characteristic and direct current fault ride-through capability are achieved.
Owner:天津华凯电气有限公司
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