Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated gate drive circuit and display panel with same

An integrated gate drive and gate drive technology, applied in static indicators, instruments, etc., can solve the problems of conductivity degradation, large threshold voltage drift, and affecting the working life of integrated gate drive circuits.

Active Publication Date: 2014-05-07
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods can achieve the purpose of prolonging the life of the integrated gate drive circuit to a certain extent, but because the pull-down thin film transistor is often under unipolar (positive voltage) bias, it will be subjected to a long period of positive DC voltage stress or Pulse voltage stress, the threshold voltage drift of the pull-down thin film transistor is still large after a long time of work, and the conductivity will be degraded, which will seriously affect the working life of the integrated gate drive circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated gate drive circuit and display panel with same
  • Integrated gate drive circuit and display panel with same
  • Integrated gate drive circuit and display panel with same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0089] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0090] see Figures 1 to 4 , the present invention provides an integrated gate drive circuit, including cascaded multi-level gate drive units and multi-level additional gate drive units, wherein,

[0091] The gate driving unit of the nth stage has an n-2th stage signal input terminal 21, an n+1th stage signal input terminal 22, an n+3th stage signal input terminal 23, a high-frequency clock signal first input terminal 24, The first input terminal 25 of the low-frequency clock signal, the second input terminal 26 of the low-frequency clock signal, the low-level input terminal 27, the first output terminal 28, and the second output terminal 29, wherein the nth-level integrated gate drive circuit unit The first output terminal 28 is used to driv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an integrated gate drive circuit and a display panel with the same. The integrated gate drive circuit comprises cascaded multistage gate drive units and multistage additional gate drive units, wherein the nth-stage gate drive unit comprises a drive unit (42) and a drop-down unit (44), and the mth-stage additional gate drive unit comprises an additional drive unit (52) and an additional drop-down unit (54). A double-drop-down structure is adopted in the integrated gate drive circuit, a thin film transistor in the drop-down unit and a thin film transistor in the additional drop-down unit in the circuit can be in a bipolar voltage bias working environment, the drift of threshold voltages of the thin film transistor in the drop-down unit and the drift of threshold voltages of the thin film transistor in the additional drop-down unit are restrained effectively, the service life of the circuit is prolonged, and the circuit can meet the demands of large and medium size display panels better. Meanwhile, the circuit is simple in structure, low in power consumption and suitable for working at low temperature and high temperature.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an integrated gate driver on array (Gate Driver on Array, GOA) and a display panel with the integrated gate driver circuit. Background technique [0002] Liquid crystal displays have many advantages such as thin bodies, power saving, and less radiation, and have been widely used. Most of the liquid crystal displays currently on the market are projection type liquid crystal displays, which include a liquid crystal panel and a backlight module. The working principle of the liquid crystal panel is to place liquid crystal molecules between two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules, and modulate the light emission of the backlight module to generate a picture. [0003] In recent years, the development of liquid crystal displays has shown a trend of high integration ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G09G3/36G09G3/20
CPCG09G3/3677G09G2320/043G09G2300/0465G09G3/3648G09G2320/045G09G2300/0876G09G2320/0209
Inventor 张盛东胡治晋廖聪维曾丽媚李长晔
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products