50 results about "Dc potential" patented technology

A method and corresponding devices to reduce the presence of unwanted ions within the pseudo-potential well of the RF fields for inductively coupled plasma mass spectrometry is disclosed. This method reduces space-charge effects and leaves more room available for the ions of interest and, hence, leads to increased transmission of the desired ions into the mass analyzer. In the present invention, the space charge is reduced by adding a low-band resolving DC potential, or a fast sweeping resolving DC potential with a notch, or a fast constant resolving DC potential with a notch, or by adding auxiliary quadrupolar or dipolar RF potential to the quadrupole ion guide, such that all the unwanted ions will be outside the stable region and therefore ejected. This reduces the charge density in the ion beam and ameliorate space charge effects.

The invention discloses a ping-pong self-stabilization zero-loop ripple suppression precision operational amplifier, which comprises a high-frequency path and a low-frequency path, and is characterized in that the high-frequency path comprises a third transconductance amplifier Gm3 and a fourth transconductance amplifier Gm4; the low-frequency path comprises a first transconductance amplifier Gm1-Gm3, a second transconductance amplifier Gm1-Gm3, a first chopper Cop1-Cop2, a second chopper Cop1-Cop2 and a ping-pong self-stabilization zero ripple suppression loop, and the ping-pong self-stabilization zero ripple suppression loop is used for suppressing offset voltage and output ripple generated by the low-frequency path. The invention designs a ping-pong self-stabilizing zero ripple suppression feedback (AZCFB) loop, the self offset voltage of the ripple suppression loop is eliminated by adopting an automatic zeroing technology, and the residual offset is filtered by a chopper and a filter. In addition, a high-pass filter is used for eliminating the influence of AZCFB loop sampling node direct-current potential deviation on output ripples, and the purpose of restraining the output ripples is achieved.

The present invention discloses a method for measuring the axial crack growth rate of a pipeline based on the DC potential drop method. First, a reference sample containing double cracks and having the same material and geometric dimensions as the sample being tested is prepared, and the crack length of the reference sample is known; then, a DC potential drop measuring device is used to pass a DC current through the reference sample and the sample being tested, respectively, and the voltage between each pair of potential probes is measured and recorded; next, the relationship between the voltage of the sample being tested and time is converted into the relationship between the crack length and time through a calibration formula; finally, based on the relationship between the crack length of the sample being tested and time, the derivative of the crack length with respect to time is solved to determine the crack growth rate of the sample being tested. The method of the present invention has simple equipment and is easy to operate. The calibration formula it relies on is highly universal and reliable.

A semiconductor integrated circuit device capable of inputting a signal of a MEMS transducer 2 includes: a power supply circuit 11 for the MEMS transducer 2; an input amplifier 12 for inputting and amplifying a signal of the MEMS transducer 2; a line driver 13 for amplifying an output from the input amplifier 12 and allowing for driving of a load connected to an output terminal T3, the line driver 13 having an input terminal; and the output terminal T3 for outputting an output of the line driver 13, wherein the power supply circuit 11, the input amplifier 12, and the line driver 13 are integrally formed on a semiconductor substrate, and wherein a gain setting circuit 14 for determining gain of the line driver 13 and a DC potential of the output terminal T3 is connected to the input terminal of the line driver 13.

A method and a system for optimization to non-contact micro intelligent sensing in secondary DC loop potential are provided, including demodulating a weak AC current modulation signal through a demodulation circuit and amplifying the weak AC current modulation signal; amplifying the weak AC current modulation signal to output a stable and amplified measurable potential signal; processing the potential signal for noise to obtain a stable DC potential signal; inputting the DC potential signal to a comprehensive computing module for analysis and processing; using micro sensors to measure information. The measured potential results are input to the comprehensive computing module to analyze and correct, and the measurement results are output to the communication module for external output. The equipment is packaged to form a potential collection “probe” and a potential measurement “unit”. The potential measurement “unit” supports multiple potential collection “probes” for accessing.

a mass filter comprising a plurality of mass filtering electrodes for mass filtering ions passing therethrough, at least a first of the electrodes having a first gap therethrough; a voltage source arranged and configured to apply a voltage to the mass filtering electrodes such that ions having a mass to charge ratio within a mass transmission window are confined by the electrodes and transmit through the mass filter, while at least some ions having a mass to charge ratio outside the mass transmission window are unstable and pass through the first gap to be filtered by the mass filter; a first collector electrode arranged to receive ions transmitting through the first gap, and the voltage source applying a DC potential difference between the first mass filtering electrode and the first collector electrode so as to force ions transmitting through the first gap onto the first collector electrode;

A plasma processing system is disclosed. The plasma processing system includes a chamber configured to house plasma in a process space. The plasma processing system includes a first chamber component arranged along a first edge of the process space and including a silicon-based material. The plasma processing system includes a second chamber component arranged along a second edge of the process space opposite to the first edge. A first DC potential is applied to the first chamber component and a second DC potential is applied to the second chamber component, in which an absolute value of the first DC potential is larger than an absolute value of the second DC potential.

Frequency Detection Pixel This description concerns a pixel (PIX2) comprising a first node (202), a second node (200) configured to receive a first DC potential (Vdd2), and a plurality of acquisition channels (CH1, CH2), each comprising: a photodiode (PD1, PD2) adapted to detect radiation (SIGL) in a first wavelength range; a capacitive element (Cc1, Cc2) coupling the photodiode to the first node (202); and a resistive element (R1, R2) coupling a first terminal (K1, K2) of the photodiode (PD1, PD2) to the second node (200). Figure for the abstract: Fig. 2

A circuit arrangement for providing electrical power for at least one DC load from at least one alternating current source having a primary DC intermediate voltage circuit. The primary DC intermediate voltage circuit is supplied with electrical power of the alternating current source via two rectifiers connected in series such that a centre point tap is provided, means for limiting the DC output voltage of the associated rectifier are provided between the centre point tap of the primary DC intermediate voltage circuit and at least one DC potential of the primary DC intermediate voltage circuit, which can limit the DC output voltage of at least one of the rectifiers connected in series in the event of a fault state in the DC load, in the secondary DC intermediate voltage circuit and / or in at least one of the DC / DC converters.

Power electronic submodule (2) with a switching device comprising a substrate (4) having a first DC potential conductor (42) with a first DC potential connection surface (426) arranged thereon and a second DC potential conductor (44) with a second DC potential connection surface (446) arranged thereon, wherein the DC potential connection surfaces (426, 446) are preferably arranged directly adjacent to each other, as well as an AC potential conductor (43) and an AC potential connection surface (436) thereon, comprising a plurality of power semiconductor devices (50), comprising an internal connection device (52) which is in the form of a film stack consisting of one or more at least partially structured and alternately arranged electrically insulating and electrically conductive films, and comprising a pressure device (9) comprising a pressure element (92),which has a dimensionally stable pressure body (920) and a plurality of rigid or elastic pressure elements (922) and presses on sections of the connection device (52), wherein the first and second DC potential connection surfaces (426, 446) as well as the AC potential connection surface (436) are designed and provided to be directly, with correct polarity and electrically conductive, connected to external DC or AC potential connection elements (60, 64) not belonging to the submodule (2), whereby the substrate (4) is simultaneously pressed onto a support device (3) in the sections of the DC potential connection surfaces (426, 446) as well as the AC potential connection surface (436), and wherein the pressure element (92) has additional pressure bodies (924).which press on the side of the AC potential connection element (60) and the DC potential connection element (64) facing away from the substrate (4), and which is introduced via a pressure introduction element (90) that not only exerts central pressure on the pressure element (92), but also exerts pressure aligned with the respective connection surfaces (426, 436, 446) of the conductor tracks and the associated DC and AC potential connection elements (60, 64).

The present teachings generally relate to generating a pseudo-barrier via an axial RF field. A first voltage is applied to a first pair of rods arranged in a multi-pole configuration, a second RF voltage is applied to a second pair of rods, and a difference between magnitudes and / or phases of the first and second RF voltages is adjusted. As discussed in more detail herein, such a pseudo-barrier may be employed in a variety of different applications. As an example, such a pseudo-barrier may be used to trap ions within a rod group that includes a plurality of rods arranged in a multi-pole configuration. In other applications, adjusting the height of the pseudo-potential barrier established in the rod set along with the application of a DC potential between the rod set and an external electrode can be used to cause mass-selective extraction of ions trapped within the rod set. In other applications, such a pseudo-barrier may be employed in a multiplexing method to perform mass spectrometry.

An ion trap includes a multipole electrode assembly, a first confinement electrode, and a second confinement electrode. The multipole electrode assembly is configured to confine ions of the first polarity in an ion channel extending in an axial direction of the multipole electrode assembly. The first confinement electrode is disposed adjacent to the multipole electrode assembly and extends in the axial direction of the multipole electrode assembly. The second confinement electrode is disposed adjacent to the multipole electrode assembly and extends in the axial direction of the multipole electrode assembly in alignment with the first confinement electrode. The first and second confinement electrodes are spaced apart in the axial direction so as to define an ion confinement region of the ion channel between the first and second confinement electrodes. The first and second confinement electrodes are configured to receive a DC potential of the first polarity to further confine ions in the ion confinement region within the ion channel.

A radio-frequency device for transversely confining ions in an ion region, comprising: a first set of electrodes arranged parallel to one another along a direction of ion movement to define a first transverse boundary of the ion region, and supplied with a first radio-frequency voltage such that opposite phases of the first radio-frequency voltage are applied to adjacent electrodes of the first set; and a second set of electrodes arranged parallel to one another along the direction of ion movement to define a second transverse boundary of the ion region, and supplied with a second radio-frequency voltage such that opposite phases of the second radio-frequency voltage are applied to adjacent electrodes of the second set.wherein the first and second transverse boundaries oppose each other in a transverse direction of the ion region, and the first radio-frequency voltage and the second radio-frequency voltage have different frequencies, wherein the electrodes of the first and second sets do not completely enclose the cross-sectional profile of the ion region, wherein additional electrodes or electrode segments are supplied with repulsive DC potentials to transversely confine the ions in subregions of the ion region that are not adjacent to the electrodes of the first or second set, and wherein DC potentials are applied to electrodes of the first or second set, wherein the repulsive DC potentials applied to the additional electrodes or electrode segments have a DC offset relative to the DC potentials applied to adjacent electrodes of the first and second sets.

The present invention discloses a soil stray current measuring device near a buried pipeline and a method for using the device, comprising a central panel, at least two test rods are arranged at the bottom of the central panel, and the two test rods are arranged opposite to each other; the test rods are hinged to the central panel and can be folded along the hinge, and the test rods are retractable structures; the surface of the central panel is provided with a retractable cable and an alligator clip for connecting with a pipeline or a pipeline measuring wire; the surface of the central panel is provided with a potential difference display screen; the surface of the central panel is provided with a DC / AC conversion knob, and the internal circuit of the potential difference display screen is electrically connected with the alligator clip and the test head for displaying the DC potential difference and the AC potential difference; at least one of the test rods is provided with a display screen for displaying the actual distance and potential difference between the two test heads. The device can directly read the potential difference and distance between two points, facilitate the calculation of the potential gradient, realize single-person measurement, and improve the test stability.

A mass spectrometer for analysing fragment ions, the mass spectrometer comprising an ion source for producing fragment ions, an ion mobility spectrometer for receiving fragment ions produced by the ion source and for separating at least a fraction of the received fragment ions according to their ion mobility into mobility-separated fragment ions. A system of electrodes is configured to receive DC electrical potentials to transfer at least a fraction of the mobility-separated fragment ions to a mass analyser for generating a mass-to-charge (m / z) spectrum exhibiting reduced spectral complexity.

The present invention comprises a multipole ion guide comprising a plurality of multipole electrodes (21, 22) grouped into a first group and a second group forming a pseudopotential and a DC potential; and an RF power supply (303) applying an RF voltage to each of the plurality of multipole electrodes, and a DC power supply (302) applying different offset DC voltages to the multipole electrodes of the first group and the multipole electrodes of the second group, wherein only multipole electrodes of the first group are arranged in a first plane orthogonal to a central axis of the multipole ion guide (4), wherein the RF voltage and the different offset DC voltages are applied to the multipole electrodes (21, 22) such that the pseudopotential has a local minimum point in a second plane.in the multipole electrodes of both the first group and the second group are arranged and which is parallel to the first plane, wherein the local minimum point of the pseudopotential formed by the multipole electrodes of the first group and the local minimum point of the pseudopotential formed by the multipole electrodes of the second group are the same, and wherein in the second plane a synthetic potential of the pseudopotential and the DC potential has a local minimum point in a position that differs from a position of the local minimum point of the pseudopotential.

A power support arrangement (10) for an electrical grid (24) and comprising a DC network (16) comprising a first DC line (DCL1) having a first DC potential, a second DC line (DCL2) having a second DC potential and an energy storage system comprising a first energy storage unit (18) between the first and second DC lines; a first set of Y-shaped phase arms (12) between the electrical grid and the first DC line (DCL1); a second set of Y-shaped phase arms (14) between the electrical grid (22) and the second DC line (DCL2), wherein the first and second sets of phase arms are controllable as voltage source converters for supporting the electrical grid with active power from the energy storage system; and a third set of phase arms (24) connected to the electrical grid in a Y-shaped configuration, having a neutral point and controllable to support the electrical grid with reactive power.

Systems, methods and software products comprising: providing cell measurement signals (CMs) associated with electrical energy storage component stack (CMs are referenced to ground potential (GP) at a local ground terminal (LGT)); providing via a first interface (FI) CM(s) as a first differential cell data signal (FDCDS) (wherein FI comprises differential terminals (DTs); providing FDCDS at a first winding (FW) of a first transformer (FT) connected to FI; establishing a coupling between GP and each terminal of FW via a bypass capacitor (BC) disposed between a DT and LGT; and referencing a center tap (CT) located between FT's winding terminals to LGT to establish a low-impedance coupling between CT and LGT, and isolate DC potential at LGT from DC potential of DTs. The low-impedance coupling is such that it reduces parasitic voltage drop at CT caused by high-frequency common-mode noise current due to noise signal transferred via parasitic capacitive coupling between FT's windings.

Systems, methods and software products comprising: providing cell measurement signals (CMs) associated with electrical energy storage component stack (CMs are referenced to ground potential (GP) at a local ground terminal (LGT)); providing via a first interface (FI) CM(s) as a first differential cell data signal (FDCDS) (wherein FI comprises differential terminals (DTs); providing FDCDS at a first winding (FW) of a first transformer (FT) connected to FI; establishing a coupling between GP and each terminal of FW via a bypass capacitor (BC) disposed between a DT and LGT; and referencing a center tap (CT) located between FT's winding terminals to LGT to establish a low-impedance coupling between CT and LGT, and isolate DC potential at LGT from DC potential of DTs. The low-impedance coupling is such that it reduces parasitic voltage drop at CT caused by high-frequency common-mode noise current due to noise signal transferred via parasitic capacitive coupling between FT's windings.

The invention discloses a method for measuring a crack growth rate and a threshold value at an extremely high temperature. Firstly, a test sample and a clamp are manufactured; then a high-temperature furnace is installed, a test sample and a thermocouple are installed, the test sample, a reference sample and a potential measurement system are connected through a high-temperature-resistant wire, and the reference sample is arranged outside the high-temperature furnace; the temperature of the high-temperature furnace is raised to 1000-1200 DEG C, heat preservation is conducted, and meanwhile water cooling is conducted to the cooling connecting rod; the low-cycle fatigue testing machine starts to load and test the crack of the sample through a potential measurement system; a K-drop method is adopted for testing, a potential measurement system monitors crack propagation in real time through a direct-current potential method, the test is ended when the crack propagation rate reaches 1 * 10 <-mm > / cycle, and a fatigue crack propagation threshold value is obtained through data processing. According to the invention, the problems of current conduction stability, load transmission accuracy and crack length measurement accuracy in the environment of 1000-1200 DEG C are solved.

Curable and cured compositions as well as articles containing the curable or cured compositions are provided. The cured compositions are typically a semi-structural or structural adhesive. Advantageously, the cured compositions can be removed (e.g., de-bonded) from the various surfaces of the articles after the useful lifetime of the articles, to correct misplacement of a part during manufacturing, or to repair the electronic device. The separation step occurs using a direct current electric potential across the cured composition.

A method for assessing a structure arranged in an electrolyte includes connecting an electric source between the structure and a low resistive connection to the electrolyte via an earth, providing a direct and / or alternating current via the source, measuring a direct and an alternating voltage between a first and second electrode, the electrodes being in contact with the electrolyte at a measurement location and being arranged at a distance to each other. The first and second electrodes are connected to a voltage measurement device. A direct potential and an alternating potential is determined between the structure and the electrolyte at the measurement location, which may include measuring the DC potential and the AC potential between the structure and at least one additional electrode in contact with the electrolyte. A property of the structure may be assessed based on the measured DC and AC voltages, and the DC and AC potentials.

The present invention relates to the field of inspection and detection technology, and in particular to a method for synchronous detection of DC signal combination of corrosion of non-cathodic protected buried steel pipelines. The method comprises constructing a DC external detection path for non-cathodic protected buried pipelines, connecting the corresponding connection ends of a portable DC feeding device to an anode, a detection pipeline and a reference electrode, and setting the output DC voltage and current according to the length of the pipeline. Then, the current breaker is connected in series to the buried pipeline detection loop; the pipeline current mapping system (PCM+ / DM) is connected to detect the buried pipeline route, and then synchronous detection is performed by combining the application of close-interval potential measurement technology and DC potential gradient detection technology to achieve detection and evaluation of items such as the corrosion activity state of the pipe body of the cathodic protected buried pipeline and the severity of the damage point of the pipeline anti-corrosion layer. The method solves the major technical difficulties in corrosion detection of non-cathodic protected buried pipelines, realizes DC signal detection of the corrosion status of such pipelines, and improves the inspection and detection quality of such pipelines.

Curable and cured compositions as well as articles containing the curable or cured compositions are provided. The cured compositions are typically a semi-structural or structural adhesive. Advantageously, the cured compositions can be removed (e.g., de-bonded) from the various surfaces of the articles after the useful lifetime of the articles, to correct misplacement of a part during manufacturing, or to repair the electronic device. The separation step occurs using a direct current electric potential across the cured composition.

A sub-module comprising direct and alternating voltage terminals and an arrangement comprising the sub-module are presented herein, the sub-module comprising: a switching device comprising a substrate having first and second direct voltage conductor tracks having first and second direct voltage connection areas arranged thereon, wherein the direct voltage connection areas are preferably arranged directly adjacent to each other, and the substrate further comprises an alternating voltage conductor track and an alternating voltage connection area thereon; and the switching device comprises a plurality of power semiconductor components; and the switching device comprises an internal connection device, wherein the first and second direct voltage connection areas and also the alternating voltage connection area are configured and arranged to be directly, polarity-correctly and electrically conductively connected to external direct and alternating voltage connection elements not associated with the sub-module by clamping means, whereby the substrate is simultaneously pressed onto a support device in the section of the direct voltage connection areas and also the alternating voltage connection area.

The present invention relates to a multilevel converter having an optimized topology, and more particularly to an electric power circuit having a substrate and a first circuit board, each having an upper side and a lower side. The lower side of the substrate is connected to a cooling body. A first electrical switching element is arranged on the upper side of the substrate, by means of which the alternating current potential present at the phase terminal can be connected to the high direct current potential present at the first potential terminal and to the low direct current potential present at the second potential terminal. By means of a second electrical switching element, the alternating current potential can be connected to the medium direct current potential present at the third potential terminal. The substrate is arranged at a distance from the first circuit board below the lower side of the first circuit board such that the upper side of the substrate faces the first circuit board. The substrate is electrically connected to the first circuit board. The second electrical switching element is arranged at least on the upper side of the first circuit board and, if possible, also at the lower side of the first circuit board.

A plasma processing system is disclosed. The plasma processing system includes a chamber configured to house plasma in a process space. The plasma processing system includes a first chamber component arranged along a first edge of the process space and including a silicon-based material. The plasma processing system includes a second chamber component arranged along a second edge of the process space opposite to the first edge. A first DC potential is applied to the first chamber component and a second DC potential is applied to the second chamber component, in which an absolute value of the first DC potential is larger than an absolute value of the second DC potential.

Method for temperature-dependent selection (AW) of turn-off speeds (ASG) for turn-off processes (AV) in power semiconductors (5) which are arranged on a DC voltage intermediate circuit (2) of a converter (6), wherein - a direct voltage (V DC ) of the DC voltage intermediate circuit (2) by means of a voltage source connected to a positive DC voltage potential (DC + ) of the DC link (2) and a negative DC potential (DC - ) of the DC voltage intermediate circuit (2), by a first comparison (VG1) with a reference DC voltage (V DC_ref .) and a DC voltage comparison result (RES VDC ) is provided, - a temperature (T) of at least one of the power semiconductors (5) is detected by means of a temperature detection (4), by a second comparison (VG2) with a reference temperature (T ref.) and a temperature comparison result (RES T ) is provided, - depending on the combination possibilities (KBM) of the DC voltage comparison result (RES VDC ) with the temperature comparison result (RES T ) the selection (AW) of a cut-off speed (ASG) from a number of cut-off speeds (ASG) is made and a newly determined cut-off speed (ASG new ) is provided and - by a third comparison (VG3) the newly determined shutdown speed (ASG new ) with a previous shutdown speed (ASG old ) and a shutdown speed comparison result (RES ASG ) is provided, by which, in case of a discrepancy between the newly determined cut-off speed (ASG new ) and previous shutdown speed (ASG old), a switchover (UM) to the newly determined cut-off speed (ASG new ) is triggered.

The invention relates to a method for operating a converter (10) which is designed to exchange electrical power between a DC side and an AC side. According to the invention, the converter (10) has a bridge circuit (12) and a split intermediate circuit (14) which is arranged between the DC side and the bridge circuit (12) and which has at least two sub-capacitances. The method comprises:-creating a first asymmetry of the sub-capacitances with respect to one another in order to produce a first potential position of the DC potential of the sub-capacitance of the intermediate circuit (14) with respect to the ground potential,-setting the first potential position of the DC potential of the sub-capacitance of the intermediate circuit (14) to a first setpoint by changing the asymmetry, the first setpoint remains constant for a first duration or is modulated at a frequency at least 100 times less than an AC frequency of the switching power. The invention further relates to the use of the method and to a converter.

A method for assessing a structure arranged in an electrolyte includes connecting an electric source between the structure and a low resistive connection to the electrolyte via an earth, providing a direct and / or alternating current via the source, measuring a direct and an alternating voltage between a first and second electrode, the electrodes being in contact with the electrolyte at a measurement location and being arranged at a distance to each other. The first and second electrodes are connected to a voltage measurement device. A direct potential and an alternating potential is determined between the structure and the electrolyte at the measurement location, which may include measuring the DC potential and the AC potential between the structure and at least one additional electrode in contact with the electrolyte. A property of the structure may be assessed based on the measured DC and AC voltages, and the DC and AC potentials.