Cubic texture Ce1-sigmaGdsigmaO2 film on NiW alloy substrate and preparation method thereof

A cubic texture and alloy technology is applied in the field of cubic texture Ce1-σGdσO2 thin film and its preparation to achieve the effect of reducing the degree of cracks

Inactive Publication Date: 2013-08-07
NORTHEASTERN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Cubic texture Ce1-sigmaGdsigmaO2 film on NiW alloy substrate and preparation method thereof
  • Cubic texture Ce1-sigmaGdsigmaO2 film on NiW alloy substrate and preparation method thereof
  • Cubic texture Ce1-sigmaGdsigmaO2 film on NiW alloy substrate and preparation method thereof

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Embodiment 1

[0021] Cubic Texture Ce on a NiW Alloy Substrate 0.9 Gd 0.1 o 2 thin film, Ce grown on a cubic textured NiW alloy substrate 0.9 Gd 0.1 o 2 Thin film with a thickness of 200nm, with (200) preferred orientation and face-centered cubic crystal structure, with a texture form of {100}, and the NiW alloy is a Ni-5%W alloy containing 5%W by mass percentage .

[0022] Its preparation method is:

[0023] (1) with (CH 3 CO 2 ) 3 Ce(III) and GdN 3 o 9 As the starting material, according to the molar ratio Ce 3+ : Gd 3+ The ratio of =9:1 is to dissolve the raw material in propionic acid (C 2 h 5 COOH), adjust the solution Ce 3+ and Gd 3+ with a total concentration of 1.2 mol / l to give Ce 0.9 Gd 0.1 o 2 Precursor;

[0024] (2) will Ce 0.9 Gd 0.1 o 2 The precursor solution was spin-coated on the Ni-5%W alloy substrate with a homogenizer at a speed of 3000r / min for 60s, and then the spin-coated substrate was sent into the furnace tube. 2 The {100} texture Ce on t...

Embodiment 2

[0030] Cubic Texture Ce on a NiW Alloy Substrate 0.8 Gd 0.2 o 2 thin film, Ce grown on a cubic textured NiW alloy substrate 0.8 Gd 0.2 o 2 The film, with a thickness of 400nm, has a (200) preferred orientation and a face-centered cubic crystal structure, and the texture form is {100}. The NiW alloy is a Ni-5%W alloy containing 5%W by mass percentage.

[0031] Its preparation method is:

[0032] (1) with (CH 3 CO 2 ) 3 Ce(III) and GdN 3 o 9 As the starting material, according to the molar ratio Ce 3+ : Gd 3+ =4 : A ratio of 1 was dissolved in propionic acid (C 2 h 5 COOH), adjust the solution Ce 3+ and Gd 3+ The total concentration of 1.0mol / l, to obtain Ce 0.8 Gd 0.2 o 2 Precursor;

[0033] (2) will Ce 0.8 Gd 0.2 o 2 The precursor solution was spin-coated on the Ni-5%W alloy substrate with a homogenizer at a speed of 3500r / min for 30s, and then the spin-coated substrate was sent into the furnace tube, in 4% volume of H 2 and 96% volume of Ar atmosp...

Embodiment 3

[0036] A {100} Texture Ce on a Ni-5%W Substrate 0.86 Gd 0.14 o 2 The buffer layer is Ce grown on the cubic textured NiW alloy substrate 0.86 Gd 0.14 o 2 The film, with a thickness of 500nm, has a (200) preferred orientation and a face-centered cubic crystal structure, and the texture form is {100}. The NiW alloy is a Ni-5%W alloy containing 5%W by mass percentage.

[0037] Its preparation method is:

[0038] (1) with (CH 3 CO 2 ) 3 Ce(III) and GdN 3 o 9 As the starting material, according to the molar ratio Ce 3+ : Gd 3+ =6 : A ratio of 1 was dissolved in propionic acid (C 2 h 5 COOH), adjust the solution Ce 3+ and Gd 3+ with a total concentration of 1.1 mol / l to give Ce 0.86 Gd 0.14 o 2 Precursor;

[0039] (2) will Ce 0.86 Gd 0.14 o 2 The precursor solution was spin-coated on the Ni-5%W alloy substrate with a homogenizer at a speed of 4000r / min for 50s, and then the spin-coated substrate was sent into the furnace tube, in 3% volume of H 2 and 97% v...

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Abstract

The invention belongs to the technical field of the superconducting material, and particularly relates to a cubic texture Ce1-sigmaGdsigmaO2 film on a NiW alloy substrate and a preparation method thereof. The Ce1-sigmaGdsigmaO2 film is grown on the Ni-5%W alloy substrate of the cubic texture, has the thickness of 200-500nm and has a (200) preferred orientation and face-centred cubic crystal structure, and the texture is {100}(001), wherein sigma is more than or equal to 0.1 and less than or equal to 0.2. The preparation method comprises the following steps of: dissolving (CH3CO2)3Ce(III) and GdN3O9 into C2H5OOH to obtain Ce1-sigmaGdsigmaO2 precursor liquid, coating the precursor liquid onto the Ni-5%W alloy substrate in a spinning mode, and sending the spin coating substrate into a furnace tube for thermal treatment. The CGO (Ce1-sigmaGdsigmaO2) buffer layer disclosed by the invention has the face-centred cubic crystal structure, the a and b axis lattice constants of YBCO (yttrium barium copper oxide) are almost same with the semi-diagonal length of the CGO(001) surface; after a YBCO(001) surface and after the CGO(001) surface are relatively rotated for 45 degrees in an in-plane mode, good lattice match can be formed; and the epitaxial growth of a YBCO superconducting film can be realized, thereby providing a great significance for improving the superconducting performance of the superconducting material prepared with a chemical method.

Description

technical field [0001] The invention belongs to the technical field of superconducting materials, in particular to a cubic texture Ce on a NiW alloy substrate 1-σ Gd σ o 2 Thin films and methods for their preparation. Background technique [0002] YB 2 Cu 3 o 7-x (YBCO) is a promising high-temperature superconducting material, which has broad application prospects in electronic devices and other fields. Because many metal ions will interdiffuse with the YBCO layer at high temperature, which will seriously reduce the superconductivity of YBCO, so it is necessary to deposit one or more layers of buffer layer materials on the metal substrate to prevent the metal substrate and the YBCO layer. In addition, as far as the YBCO film is concerned, only the biaxial texture can have good superconductivity, which requires the buffer layer to have good lattice matching with the substrate and YBCO, and the biaxial texture epitaxy of the metal substrate can be transferred to the YB...

Claims

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Application Information

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IPC IPC(8): H01B12/06H01B13/00
CPCY02E40/642Y02E40/60
Inventor 李英楠罗清威林琳李凤华王丽娜樊占国
Owner NORTHEASTERN UNIV
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