Heterotopic multi-metal oxide film epitaxial growth and continuous preparation method

Abstract

The invention provides a heterotopic multi-metal oxide film epitaxial growth and continuous preparation method. According to the characteristics of a metal target, the initial component evaporation isperformed; after nanoparticles evaporated from the target the high vacuum state reach the substrate, the nanoparticles are deposited into an amorphous metal precursor film; after deposition, the precursor film is transported to low-pressure atmospheres with different oxygen partial pressures; and at different temperatures, crystallization and epitaxial growth are performed. By the method, co-evaporation of multi-metal elements with different melting points and sublimation temperatures is realized, the evaporation technology and conditions of the elements can be selected according to characteristics of the constituent elements, and the dynamic baseband can help realize the uniformity of the precursor component; the later oxidation treatment starts with the highly-refined nano-scale precursor, nucleation centers of later crystallization growth are many, and growth is fast and density is high; and by controlling the oxygen partial pressure, the reaction heat-treatment can be realized ata lower temperature, and then crystallization and epitaxial growth can be achieved at low temperature. The preparation method is simple.

Description

technical field [0001] The invention relates to a method for preparing superconducting materials, in particular to a method for continuously preparing superconducting strips, which is applied in the technical field of preparing high-temperature superconducting materials. Background technique [0002] Multi-element metal oxide films, including high-temperature superconducting (REBaCuO, RE=RE=Y, Gd, Dy and other rare earth elements), huge giant magnetoresistance (LaSrMnO), piezoelectric ceramics (PZT), ferroelectric materials, etc., have many functions and wide application. For example with ReBa based 1 Cu 2 o 7-δ (REBaCuO,) the second-generation high-temperature superconducting tape of high-temperature superconductors. The structure of this new type of power material includes a metal base tape, an oxide buffer layer, a copper-based oxide, a REBaCuO superconducting layer, and a metal protection layer. The second-generation high-temperature superconducting tape refers to a ...

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Problems solved by technology

[0004] In order to solve the problems of the prior art, the purpose of the present invention is to overcome the deficiencies of the prior art, and provide a method for the epitaxial growth and continuous preparation of heterogeneous multi-element metal oxide thin films, mainly to solve the ubiquitous uneven component structure , serious element diffusion, large surface roughness, holes, and secondary equal defects can realize the co-evaporation of multiple metal elements with different melting points and sublimation temperatures. The evaporation technology and conditions of the element can be selected according to the characteristics of the constituent elements, and the dynamic baseband can be realized. The uniformity of the precursor components, the post-oxidation treatment starts from the highly refined, nano-scale precursor components, and there are many nucleation centers in the later stage of crystallization growth, the growth is fast and the density is relatively high. In addition, by controlling the oxygen partial pressure, it can be realized Reactive heat treatment at a lower temperature can achieve crystallization and epitaxial growth at a lower temperature, especially to overcome technical problems such as easy deterioration of the structure after multi-layer coating and decrease in crystal orientation

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