702 results about "Metal oxide thin films" patented technology

Electrically conductive noble metal oxide films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Re, Ru, Os and Ir oxides are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor and an oxygen source. The noble metal precursor is preferably a betadiketonate compound and the oxygen source is preferably ozone or oxygen plasma. The deposition temperature may be less than about 200° C.

A series of noble metal organometallic complexes of the general formula (I): ML_aX_b(FBC)_c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO₂, OsO₂ and RuO₂.

The invention is to a dual beam process for providing an ion-conducting membrane with a thin metal or metal-oxide film. The process includes the cleaning of a membrane surface with a low energy electron beam followed by the deposition of the metal or metal-oxide film by a high energy electron beam of ions.

A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a gaseous inorganic reducing agent, thereby forming a metal layer. In preferred arrangements, the reducing agent comprises of thermal hydrogen (H₂), hydrogen radicals (H*) and/or carbon monoxide (CO).

It is an object of the present invention to provide a biochemical instrument wherein an adhesive layer that has hydrophilic properties, heat resistance, and satisfactory adhesiveness is provided between a plastic material surface and a hydrophilic polymer layer. The present invention provides a biochemical instrument comprising a plastic material that is coated on its surface with a hydrophilic polymer, which comprises a metal oxide thin film between the plastic material and the hydrophilic polymer layer, wherein the film stress of said metal oxide thin film is less than 5.4×10²¹ dyn/cm².

The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.

Embodiments of the invention disclose an array substrate and a manufacturing method therefor. The array substrate comprises a plurality of first thin film transistors and a plurality of second thin film transistors; the first thin film transistors and the second thin film transistors are formed above a substrate; the active layer of each first thin film transistor is low-temperature polysilicon; the active layer of each second thin film transistor is an oxide semiconductor; the first thin film transistors are positioned in a peripheral circuit region of the array substrate; the second thin film transistors are positioned in a display region of the array substrate; the grid electrodes of the first thin film transistors and the second thin film transistors are positioned on different layers; and the source and drain electrodes of the first thin film transistors and the source and drain electrodes of the second thin film transistors are positioned on the same layer. By adoption of the array substrate and the manufacturing method therefor, the problem of incompatibility of two film layers of two types of thin film transistors when the metal oxide thin film transistors and the low-temperature polysilicon thin film transistors are formed in a display panel at the same time is solved, so that the electrical performance and the stability of the display panel are improved.

The embodiment of the invention discloses an array substrate and a manufacturing method thereof as well as display equipment, which belong to the technical field of liquid crystal displays and are used for lowering manufacturing cost. The manufacturing method comprises manufacturing processes of a film transistor, a first transparent electrode and a second transparent electrode; the first and the second transparent electrodes generate a multi-dimensional electric field; the manufacturing process of the first transparent electrode comprises formation of a metallic oxide film which has characteristics of a semiconductor; and the first transparent electrode is formed via a metalizing process of a part of the metallic oxide film, a semi-conductor active layer is formed by the rest of the metallic oxide film, which is executed for metalizing process. The manufacturing method disclosed by the embodiment of the invention is applicable to manufacturing of the liquid crystal displays.

A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as synthesis of undoped and/or doped metal-based oxide alloy thin films.

The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.

This invention characteristic is that the flexible flow-collection body comprises support layer and conducive layer, the support layer is an organic membranous winding material whose thickness is 10-100mum; conductive layer is 1-500-layer conductive membranous material whose thickness is 10nm-10mum; The conductive layer material of the flexible flow- collection body is nickel, the platinum, golden, ruthenium, the cobalt or the manganese metal membranous material; RuO2, NiO, TiO2,SnO2, ZrO2, V2O5 or MnO2 transition metal oxide compound membranous material, poly-aniline, poly-pyrrole and poly-thiophene conductive polymer membranous material.

In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

The invention discloses an integrated hydrogen sensor made from mixed graphene film, noble metal particles and metallic oxide materials and a preparation method of the integrated hydrogen sensor. The sensor comprises a substrate, a heating electrode, a heat-conducting insulation layer and a detection electrode; the heating electrode is placed on the substrate; the heat-conducting insulation layer is placed between the heating electrode and the detection electrode and further the sensor further comprises a metallic oxide film deposited on the detection electrode, the noble metal particles deposited on the metallic oxide film, and the graphene film covers the metallic oxide film on which the noble metal particles are deposited. The noble metal particles covering the metallic oxide film are single atoms, wherein the covering rate is 0.05-100 percent, the particle size is 0.2-0.4 nanometers, and the noble metal particles are randomly and uniformly arranged. The metallic oxide film is 10 nanometers to 2 micrometers in thickness. The graphene film is 0.5-1.2 nanometers in thickness. By adopting the integrated hydrogen sensor provided by the invention, high-sensitivity and high-selectivity detection and monitoring for hydrogen can be simultaneously achieved.

Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

The invention provides a method for manufacturing a self-aligned metal-oxide film transistor. First, a metal source drain region, a metal-oxide semiconductor channel region and a transparent gate medium layer are sequentially arranged on a glass substrate, then positive photoresist is coated on the gate medium layer, after pre-baking is carried out, exposure, developing and hardbaking are carried out from the back of the glass substrate, afterwards, a layer of conductive film develops with glue, then a gate electrode is obtained after stripping the photoresist and the conductive film, photoetching and etching. The method of the invention can ensure self alignment between the gate electrode and the source drain region of a component, namely, the gate electrode is symmetrically arranged right above between the source and the drain, while, length of the gate electrode is determined by the distance between the source and the drain instead of size of a mask, thus effectively avoiding ghost effect.