205 results about "Metal oxide thin films" patented technology

A hydrogen gas sensor with a substrate and a zinc oxide nanostructured thin film deposited on the substrate, wherein the zinc oxide nanostructured thin film has a lattice structure with a weight ratio of low binding energy O2− ions to medium binding energy oxygen vacancies in a range of 0.1 to 1.0, and a method of fabricating a gas sensor by thermally oxidizing a metal thin film under low oxygen partial pressure. Various combinations of embodiments of the hydrogen gas sensor and the method of fabricating the gas sensor are provided.

The invention relates to the technical field of solar cells, and provides a doped oxide target material for a solar cell, which is prepared by simultaneously carrying out composite doping with high-purity indium oxide according to different proportions by using one or two of wide-band gap elements of Ti, Zn, A < l > and Ga, one or two of high-valence metal elements of Ta, Mn, Zr, W and Mo, and one or two of rare earth elements of La, Nd, Sm, Ce, Pr and Y. On the basis of obtaining a high-density target material, a PVD thin film preparation process is optimized, and a metal oxide thin film with high mobility and high carrier concentration for a solar cell window layer is obtained. Through composite doping of wide-band-gap elements, high-valence elements and rare earth elements in a specific proportion and through the comprehensive effect of different types of doped elements, the carrier concentration is synchronously improved on the basis of improving the mobility of the thin film, and the transmittance is not negatively influenced while the carrier concentration is improved.

Disclosed herein are methods and apparatuses for exposing an organic metal-oxide film to a blanket UV treatment prior to a lithographic patterning operation. A blanket UV treatment may be used to shift a solubility curve of the film, such that a lower EUV dose may be used to pattern the film. Additionally, a blanket UV treatment may be used after development to further cure the film.

The invention discloses a flexible pressure sensor based on a metal oxide thin film transistor and a preparation method and application thereof. The flexible pressure sensor based on the metal oxide thin film transistor comprises a flexible substrate, a gate electrode layer, a gate dielectric layer, a metal oxide channel layer, a source electrode, a drain electrode and a piezoelectric layer, the piezoelectric layer comprises a piezoelectric polymer, ZnO nanoparticles and MXene nanosheets, and the surface of the piezoelectric layer is provided with a convex micro-nano structure. The flexible pressure sensor based on the metal oxide thin film transistor has the advantages of excellent electrical properties, good flexibility, high sensitivity, easy integration, simple preparation process and low cost, is suitable for the production of large-scale sensor arrays, and has very wide application prospects in the fields of flexible touch screens, human-computer interaction, electronic skin and the like.

Provided is a metal oxide dispersion having excellent gap-fill performance, and a method of manufacturing a metal oxide film using the same. A metal oxide dispersion according to a first aspect of the present invention contains carboxylic acid having 9 or more carbon atoms, metal oxide nanoparticles surface-treated with a capping agent, and a solvent. A metal oxide dispersion according to a second aspect of the present invention contains carboxylic acid having a boiling point of 250° C. or higher at an atmospheric pressure, metal oxide nanoparticles surface-treated with a capping agent, and a solvent. A method of manufacturing a metal oxide film according to a third aspect of the present invention comprises: a step for forming a coating film formed of the metal oxide dispersion described above; and a step for heating the coating film at a temperature of 165° C. or higher.

The present invention relates to: a substrate having an upper surface oriented to a (111) crystal plane; and a graphene laminated structure including same. Particularly, disclosed is a substrate having an upper surface oriented to a (111) crystal plane, the substrate comprising: a metal foil substrate; a metal oxide thin film formed by deposition of a cubic metal oxide on the substrate, and crystal-oriented so that the orientation of the (001) crystal plane of the metal oxide is parallel to the perpendicular direction to the surface of the substrate; a (001) crystal plane-oriented first thin film formed on the metal oxide thin film by deposition of a first metal having a hexagonal crystal structure, and crystal-oriented so that the orientation of the (001) crystal plane of the first metal is parallel to the perpendicular direction to the surface of the substrate; and a (111) crystal plane-oriented second thin film formed on the first thin film by deposition of a cubic metal oxide, and crystal-oriented so that the orientation of the (111) crystal plane of the second metal is parallel to the perpendicular direction to the surface of the substrate.

The invention belongs to the field of printed optoelectronic device preparation, and particularly relates to a method for improving field effect performance of a printed metal oxide thin film transistor through atmosphere annealing. The invention provides a method for improving the field effect performance of a printed thin film transistor. The method comprises the following steps: cutting a Si / SiO2 substrate and carrying out ultrasonic cleaning for 10 minutes; placing the substrate in a gas plasma generating device to remove impurities adsorbed on the surface of the substrate; dissolving zinc acetate dihydrate, stannous chloride dihydrate and indium nitrate hydrate in ethylene glycol monomethyl ether; printing an active layer of the thin film transistor device and carrying out 550 DEG C air atmosphere annealing treatment; in order to improve the field effect performance of the thin film transistor, annealing treatment is carried out on the metal oxide active layer material in a vacuum atmosphere at the temperature of 550 DEG C; and printing a source electrode and a drain electrode of the thin film transistor by using high-precision ink-jet printing equipment. According to the method provided by the invention, the field effect performance of the printed metal oxide thin film transistor can be improved, and the requirement of a current optoelectronic device on high electrical performance of a printed driving device is met.

Provided is a metal-oxide thin-film transistor. The metal-oxide thin-film transistor includes a gate, a gate insulation layer, a metal-oxide semiconductor layer, a source electrode, a drain electrode, and a passivation layer that are successively disposed on a base substrate; wherein the source electrode and the drain electrode are both in a laminated structure, wherein the laminated structure of the source electrode or the drain electrode at least includes a bulk metal layer and an electrode protection layer; wherein the electrode protection layer includes a metal or a metal alloy; the electrode protection layer is at least disposed between the metal-oxide semiconductor layer and the bulk metal layer; wherein a metal-oxide layer is disposed between the electrode protection layer and the bulk metal layer.

The invention discloses a preparation process of a novel flame-retardant heat-insulating polyester fiber fabric, and relates to the technical field of fabric textile, and the preparation process of the fiber fabric comprises the following steps: S1, modifying polyester fibers; s2, preparing a bio-based flame retardant; s3, spinning a fiber layer containing bio-based flame-retardant components; s4, depositing a metal oxide thin film; s5, weaving the fabric; s6, coating an organic silicon flame-retardant coating and a heat-insulating coating; and S7, dipping a flame-retardant heat-insulating auxiliary agent. The surface of the polyester fiber is treated by radio frequency plasma, a flame retardant molecular chain containing phosphorus and nitrogen with the atomic ratio of phosphorus to nitrogen being 3: 2 is chemically grafted, and meanwhile, nano aerogel particles with the particle size being 60-80 nm are uniformly dispersed in a polyester spinning solution for blended spinning, so that the problem that an existing fabric is insufficient in flame retardance and heat insulation performance can be solved; the problems that in the high-temperature and flammable environment, the fabric cannot provide enough safety protection for a user due to poor flame-retardant and heat-insulating performance, fire hazards are likely to be caused, and personnel are scalded are solved.

The present invention relates to a method for crystallization of a metal oxide thin film by using thermal dissipation annealing (TDA) and exhibits an effect enabling high-temperature thermal annealing, which is essential for the performance improvement of a semiconductor material, a sensor material, and the like deposited on a thin-plate substrate, even without degrading the performance of the thin-plate substrate. In addition, a metal oxide thin film prepared by the method of the present invention is in the form of a two-dimensional nanosheet, and thus may have a low defect density (high crystallinity) and a wide surface area. Accordingly, based on the improved photosensitivity and photoreactivity, the metal oxide thin film may be utilized in a high-performance photoelectric device.

To extend the lifespan of plating baths used for forming metal oxide films and to enable more efficient use of the plating baths. [Solution] The method for forming a metal oxide film comprises the steps of forming a metal oxide film on the surface of a plated object using a plating bath containing a metal compound that forms the film and a boron compound that acts as a reducing agent, and regenerating the plating bath using an adsorption filter that adsorbs boric acid.

The invention provides a metal oxide film preparation method capable of realizing a stable stoichiometric ratio, and belongs to the technical field of nano-scale film preparation. According to the method, a metal oxide radio frequency magnetron sputtering target material is used as a raw material, the metal oxide thin film is prepared on a pretreated growth substrate in a radio frequency magnetron sputtering mode, and in the radio frequency magnetron sputtering process, the rotating speed of the growth substrate is 5-300 r / min, the shielding gas is argon, the flow is 10-80 sccm, and the power of radio frequency magnetron sputtering is 20-120 W. According to the invention, the prepared metal oxide film has a stable stoichiometric ratio and high flatness and uniformity by regulating and controlling core parameters such as gas flow, internal pressure of the cavity and radio frequency magnetron sputtering power.

The embodiment of the invention discloses a display panel, a display module and electronic equipment, relates to the technical field of display, and is used for reducing the size of a frame and reducing power consumption. The display panel comprises a pixel circuit located in a display area, and a first shift register and a second shift register which are located in a frame area. The pixel circuit comprises a data write-in circuit, a driving circuit and a compensating circuit, and transistors included in the data write-in circuit and the compensating circuit are metal oxide thin film transistors. The first shift register is electrically connected with the data write-in circuit of the row of pixel circuits. The first shift register is configured to provide a first scan signal to the connected data write circuit. The data write circuit is configured to be turned on in response to a first scan signal. The second shift register is electrically connected with the compensation circuit of at least one row of pixel circuits. The second shift register is configured to provide a second scanning signal to the connected compensation circuit. The compensation circuit is configured to be turned on in response to a second scan signal.

To provide a metal oxide film having a novel structure. A metal oxide film with highly stable physical properties is provided. A highly reliable semiconductor device using the metal oxide is provided.SOLUTION: The metal oxide film includes In, Ga, and Zn, a plurality of first layers in which In atoms are periodically arranged and a plurality of second layers in which Ga atoms or Zn atoms are periodically arranged are observed in a cross-sectional observation image, and a first region including n (n is a natural number) second layers between a pair of first layers and a second region including m (m is a natural number other than n) second layers between another pair of first layers are included.SELECTED DRAWING: Figure 1

The present disclosure can be applied to semiconductor devices and, in particular, relates to a MOSFET device made of silicon carbide and a method for manufacturing same. A metal-oxide film semiconductor field-effect transistor device of the present disclosure may comprise: a drain electrode; a substrate arranged on the drain electrode; an N-type drift layer arranged on the substrate; a current-spreading layer arranged on the drift layer; P-type well layers arranged on the current-spreading layer to define a channel; an N+ region arranged on the well layers; a damage prevention layer adjacent to the N+ region and having a lower N-type doping concentration than that of the N+ region; a P+ region arranged on one side of the channel; a gate oxide layer arranged on the current-spreading layer; a gate layer arranged on the gate oxide layer; and a source electrode arranged on the gate layer.

The invention provides a preparation method of a transparent conductive oxide film, and the preparation method comprises the following steps: forming a metal layer on a substrate under an anaerobic condition; forming a first metal oxide layer on one side, far away from the substrate, of the metal layer, and oxidizing the metal layer to form a second metal oxide layer so as to form a metal oxide thin film comprising the first metal oxide layer and the second metal oxide layer; the first metal oxide layer and the second metal oxide layer are made of the same material. The surface of the substrate can be protected from being damaged, and the performance of the device is improved.

The application is suitable for the technical field of electrochemical performance test, and provides a method for testing the electrocatalytic performance of a transition metal oxide film. The method comprises the steps of film sample pretreatment, test electrolyte preparation, electrochemical test system building, electrochemical test parameter setting, and test data processing and analysis. The application optimizes the key parameters and process design related to the test according to the characteristics of the transition metal oxide film, and realizes comprehensive and accurate evaluation of the electrocatalytic performance of the film. The test method has high standardization, clear operation process and good repeatability, and the test result is accurate and reliable and has good comparability. The application can provide a unified evaluation standard for the electrocatalytic performance of the transition metal oxide film for different research institutions, and provide a reliable basis for the performance evaluation and application research of the film, which is conducive to promoting the application research of the film in the field of new energy.

An embodiment of the present application provides a metal oxide thin film transistor, a display panel and a manufacturing method thereof. The metal oxide thin film transistor includes a buffer layer, an active layer, a gate insulating layer, a gate layer and a dielectric layer. The active layer is disposed on one side of the buffer layer, and the material of the active layer is metal oxide. The gate insulating layer is disposed on the side of the active layer away from the buffer layer. The gate layer is disposed on the side of the gate insulating layer away from the active layer. The dielectric layer is disposed on the side of the gate layer away from the buffer layer, and the dielectric layer covers a part of the active layer, a part of the buffer layer and a part of the gate insulating layer. In the direction from the buffer layer to the active layer, the dielectric layer includes a silicon oxide sublayer and a barrier sublayer which are sequentially stacked, and the covering performance of the barrier sublayer is greater than that of the silicon oxide sublayer. In the embodiment of the present application, the barrier sublayer with greater covering performance does not break, avoiding the situation that water vapor enters and affects other devices due to the complete breakage of the dielectric layer.

The invention provides double-silver Low-E coated glass and a preparation method thereof. In the double-silver Low-E coated glass, a Low-E film layer sequentially comprises a first dielectric layer, a first seed layer, an absorption layer, a first silver layer, a first protective layer, a second dielectric layer, a second seed layer, a second silver layer, a second protective layer, a third dielectric layer and an outermost protective layer from one surface of glass serving as a substrate; wherein the second dielectric layer is a metal oxide thin film; the third dielectric layer comprises a metal oxide film adjacent to the second protective layer; the first protection layer and the second protection layer are pure metal or alloy films in a complete oxidation state; the first seed layer is composed of a ZnAlO thin film adjacent to the first dielectric layer and a non-peroxy-state AZO thin film between the ZnAlO thin film and the absorption layer; and the absorption layer is a NiCr film, a Ti film, a Ni film, a Cr film or a ZnAl film in a metal state. The preparation method of the double-silver Low-E coated glass is used for preparing the double-silver Low-E coated glass disclosed by the invention.

The application discloses a water-soluble polymer-based proton-type memristor and a preparation method thereof. The memristor has a sandwich structure and is sequentially composed of a top electrode, an inorganic resistive switching functional layer, an organic resistive switching functional layer and a bottom electrode. The top electrode is a metal active electrode, the bottom electrode is indium tin oxide (ITO), the inorganic resistive switching functional layer is a metal oxide film, and the organic resistive switching functional layer is a doping system composed of a water-soluble polymer and a doping material. The preparation process of the proton-type memristor is reliable and stable. The obtained memristor has the characteristics of high biocompatibility and green environmental protection. The device performance consistency and environmental dependence are improved, and the simulation of bionic synaptic plasticity is greatly improved. The device can be controlled by using a low voltage, has low power consumption, and has a good bidirectional current modulation effect, so that the device provides a possibility for further enriching synaptic functions and designing flexible wearable devices.

The present invention relates to a method for forming a metal oxide film, the method comprising the steps of: preparing a substrate; (i) supplying a precursor comprising indium onto the substrate; (ii) supplying a precursor comprising silicon onto the substrate; (iii) supplying a gas comprising oxygen onto the substrate; and (iv) repeating steps (i) and (ii) N times (N is a natural number).

The invention relates to a three-layer amorphous metal oxide thin film transistor and a preparation method thereof, and belongs to the field of thin film transistors. The method comprises the following steps: cleaning a substrate, photoetching the substrate, preparing an In2O3 thin film on the substrate at room temperature by adopting radio frequency magnetron sputtering, depositing an IGZO thin film on the In2O3 thin film at room temperature, preparing a Ga2O3 thin film on the IGZO thin film to serve as a channel layer of the thin film transistor, annealing in an air atmosphere, and preparing a source-drain Al electrode on the channel layer. The method has the advantages that the preparation conditions of the thin film transistor are optimized, the mobility of the TFT is improved by increasing the content of indium on the lower surface of a semiconductor material, the stability of the TFT is improved by increasing the content of gallium on the upper surface of the semiconductor material, the AOS TFT of a multi-active-layer structure is designed and prepared, the contradiction between the mobility and the stability of the TFT is solved, and the electrical performance of a device is improved.

A display substrate and a display device are provided. The display substrate includes: a base substrate, and a low temperature poly-silicon thin film transistor and a metal oxide thin film transistor on the base substrate; the low temperature poly-silicon thin film transistor includes: a low temperature poly-silicon semiconductor layer, a first gate insulating layer, a first gate electrode, a first interlayer insulating layer, a first source electrode, and a first drain electrode; the metal oxide thin film transistor includes: a metal oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a second interlayer insulating layer, a passivation layer, a second source electrode, and a second drain electrode; and the second drain electrode is on a side of the metal oxide semiconductor layer away from the base substrate.

Provided is a semiconductor package bonding method. This semiconductor package bonding method may comprise the steps of: preparing a semiconductor substrate having a metal pad on one surface thereof, and a semiconductor chip having a bump on one surface thereof and bonded to the semiconductor substrate; positioning the semiconductor chip on the semiconductor substrate such that the metal pad and the bump are aligned in a vertical direction; and bonding the semiconductor substrate and the semiconductor chip to each other under a flux-less condition so that the metal pad and the bump are in electrical contact, wherein, in the step of bonding the semiconductor chip, a bonding interface between the metal pad and the bump is irradiated with ultraviolet rays, and the ultraviolet irradiation energy is relatively greater than the metal oxide film formation energy such that the formation of the metal oxide film at the bonding interface between the metal pad and the bump is inhibited by the ultraviolet rays.

An array substrate and a display panel. The array substrate includes: a base substrate; a gate line and a data line on the base substrate, the gate line intersect the data line to define a pixel region; a metal oxide thin film transistor is arranged in the pixel region, the metal oxide thin film transistor includes a metal oxide semiconductor layer; the metal oxide semiconductor layer includes a first part and a second part; the first part and the data line are connected through a first via hole; the first part is in a stripe shape; a first included angle is between extension directions of the first part and the data line; an orthographic projection of the second part overlap with an orthographic projection of the gate line on the base substrate and do not overlap with an orthographic projection of the data line on the base substrate.

A substrate processing method for forming a thin film includes providing a substrate in a reaction chamber and performing a supercycle of a first metal oxide cycle and a second metal oxide cycle. A ratio of a number of the first metal oxide cycles to a number of second metal oxide cycles in the supercycle may be between 6:1 to 1:2. An atomic ratio of the first metal to the second metal in the doped metal oxide film is 7:1 to 15:1.

The invention relates to the technical field of photoelectric detectors, in particular to a dual-function integrated phototransistor based on a GaN-based heterojunction and a preparation method of the dual-function integrated phototransistor based on the GaN-based heterojunction, and the dual-function integrated phototransistor based on the GaN-based heterojunction comprises a substrate layer, a buffer layer, a GaN barrier layer, an AlN reflecting layer, an AlGaN barrier layer, a GaN cap layer, a metal oxide thin film layer, a two-dimensional material layer and a metal electrode are sequentially grown on a substrate layer through an epitaxial growth method, the GaN barrier layer, the AlN reflecting layer, the AlGaN barrier layer and the GaN cap layer jointly form a GaN / AlGaN heterojunction, and based on the synergistic effect of the two-dimensional material layer and the GaN / AlGaN heterojunction, the GaN / AlGaN heterojunction can be formed. And the bifunctional integrated phototransistor is controlled to perform function mode switching through the bias voltage. According to the invention, a cross-dimension heterogeneous integrated structure is utilized, a physical basis of coexistence of two high-performance working modes is provided in a single physical entity, and switching of a photoelectric detection mode and a photoelectric synapse mode of the difunctional integrated phototransistor can be controlled through a low-bias electric signal.

The application discloses an in-screen fingerprint identification circuit and belongs to the technical field of in-screen fingerprint identification. The in-screen fingerprint identification circuit comprises a pixel circuit, the pixel circuit comprises a metal oxide thin film transistor, the drain electrode of the metal oxide thin film transistor is connected with a first voltage, and the gate electrode of the metal oxide thin film transistor is connected with a corresponding voltage based on the illumination condition of a pixel array; and an amplification circuit, a first input end of the amplification circuit is connected with an output end of the pixel circuit, and the amplification circuit is used for at least one of conversion, integration and filtering of the current output by the pixel circuit. The in-screen fingerprint identification circuit of the application can complete the photosensitive work of the pixel and the work of the scanning switch by using a single thin film transistor, can be compatible with a display circuit, the pixel circuit has super-high resolution, fingerprint identification in a large area can be realized, and the biological safety and user experience are significantly improved.

To provide a method of manufacturing a metal oxide film or a metal nitride film on an Si substrate which is not affected by an Si oxide layer or is affected by the Si oxide layer to an extremely small extent.SOLUTION: The method for producing a metallic oxide film comprises growing a metallic oxide film or a metallic nitride film on an Si substrate, wherein the Si substrate is cleaned with a soln. containing NH4F. Supplying the Si substrate after the cleaning to a reaction chamber and adsorbing a metal layer made of a metal constituting the metal oxide film or the metal nitride film on the Si substrate, wherein the adsorption of the metal layer is performed by applying a pressure P (Pa) within a pressure range (Pa) in which an adsorption rate and a desorption rate of the metal constituting the metal oxide film show an equilibrium state in a Langmuir adsorption isotherm at an arbitrary temperature T (°C), subsequently, epitaxially growing the metal oxide film or the metal nitride film.SELECTED DRAWING: Figure 4

The present invention provides a method for manufacturing an array substrate, an array substrate, and a display panel. The array substrate includes a substrate and metal oxide thin film transistors and polysilicon thin film transistors located on the substrate. The metal oxide thin film transistors and the polysilicon thin film transistors are arranged at intervals. The metal oxide thin film transistors are located in a first region and are used to drive pixel electrodes, and the polysilicon thin film transistors are located in a second region and are used to control the metal oxide thin film transistors. The method for manufacturing an array substrate, the array substrate, and the display panel provided by the embodiments of the present invention simultaneously adopt polysilicon thin film transistors and metal oxide thin film transistors, are designed in regions, are compatible in process, effectively solve the technical bottleneck of polysilicon thin film transistors, enable them to be applied to large-size display panels, and can effectively reduce the power consumption of the display panel.