66 results about "Inorganic lead" patented technology

A method of fabricating an active matrix display is disclosed in which one or more oxide thin film transistors is monolithically integrated with an inorganic light emitting diode structure. The method comprises forming an array of inorganic light emitting diodes over a substrate defining a plurality of sub-pixels, depositing an insulating layer over the inorganic LED array, forming conductive vias through the insulating layer, one via for each LED in the LED array, and forming a metal oxide thin film transistor backplane, including an array of pixel driver circuits, over the dielectric layer and conductive vias, wherein one driver circuit electrically controls each sub-pixel through the dielectric layer.

An inorganic light-emitting diode (iLED) pixel structure includes a transparent pixel substrate having an LED surface, an emission surface opposite the LED surface, and one or more sides other than the LED surface and the emission surface that are not parallel to the LED surface or the emission surface. One or more iLEDs are mounted on the pixel substrate and each iLED has an emission side adjacent to the LED surface of the pixel substrate to emit light into the pixel substrate and out of the emission surface. A reflector is disposed on at least a portion of the one or more sides.

The present invention discloses an LED display module, an LED display device and a manufacturing method of the LED display module, and belongs to the display device field. The LED display module comprises a substrate, a plurality of inorganic LED chips, a control circuit, a photoluminescence layer and a transparent cover plate. The plurality of inorganic LED chips are in array arrangement on one side surface of the substrate and are connected with the control circuit separately, the control circuit is used to drive the plurality of inorganic LED chips to emit light, and the photoluminescence layer is arranged between the transparent cover plate and the plurality of inorganic LED chips and is excited to emit colored light under the irradiation of the light emitted by the inorganic LED chips. By arranging the inorganic LED chips on the photoluminescence layer, the photoluminescence layer is excited to emit colored light under the irradiation of the light emitted by the inorganic LED chips, so that the problem that when the organic materials are used to excite the colored light, the service lives of the organic materials are short, so that the service life of the display module is short, is avoided, and accordingly, the service life of the display module is prolonged.

The invention provides a pixel structure and manufacture method thereof. The pixel structure comprises a substrate and pixel units on the substrate. Each of the pixel unit comprises a pixel circuit structural layer, a pixel definition layer, a pixel electrode, inorganic LED subpixel and a first OLED subpixel. The pixle circuit structural layer is formed on the surface of the substrate; the pixel definition layer is formed on the pixel circuit structural layer and has a first opening and a second opening; the pixel electrode is disposed in the first and second openings and electrically connected with the pixle circuit structural layer; the inorganic LED subpixel comprises an ahesion layer, a first semiconductor layer, a second semiconductor layer; the first OLED subpixel comprises a first transmission layer and a second transmission layer; beam emitted by the inorganic LED subpixel has a different color from that of beam emitted by the first OLED subpixel. The pixel structure can solve problems that blue light OLED subpixel has a relatively low luminous efficiency, and that red light OLED has a relatively low luminous efficiency after miniaturation.

Disclosed are an inorganic LED packaging support and a packaging method. The packaging method includes: (1) subjecting an LED chip to crystal solidification and wire welding; (2) printing solder paste on a second step of a support body by a steel net printing technology; (3) preheating the support body so that the solder paste cannot melt and interference fit between a first step of the support body and glass lenses in a normal temperature can be expanded into clearance fit; (4) arranging the glass lenses on a mold fit for the support body; (5) taking out the preheated support body and combining the preheated support body with the glass lenses; (6) subjected an LED support with the lenses to reflow welding for one time. Since a thermal expansion coefficient of a material used on a second metal layer on a first transition surface is larger than that of the glass lenses, and expanding size of the first step is larger than that of the glass lenses, fit between the glass lenses and the first step during working is changed to transition fit, extruding stress is released, and fatigue life of the material is improved.

The invention discloses an all-inorganic lead halogen perovskite nano composite luminous material and a preparation method and application. A chemical general formula of the material is Cs4PbX6-CsPbX3-imidazole, X is one or multiple of Cl, Br and I, and imidazole is one or multiple of methyl imidazole, dimethyl imidazole and 4-methylimidazole. The material is composed of CsPbX3 luminous crystal nucleus of 20nm and a Cs4PbX6 frame of 160nm, a capsule-type core-shell structure is formed, and imidazole serves as a chelating agent to chelate with lead ions in Cs4PbX6 through nitrogen-containing groups of imidazole, so that waterproof stability and heatproof stability of the luminous material are improved greatly. The luminous material can be synthesized at room temperature by adopting a one-step precipitation method simple in process. Successful cell fluorescence labeling can be realized under laser irradiation by jointly incubating the luminous material and biological cells. The luminousmaterial is expected to replace conventional rare earth trichromatic phosphor and organic dye, can improve stability of devices and widen color domain of the devices and is of important significance in promoting development of the application field of photoelectric devices and biological fluorescent markers.

A method of forming an active matrix, light emitting diode (LED) array includes removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.

The invention relates to lead-free electrocondution slurry used for a crystalline silicon solar cell back electrode. The lead-free electrocondution slurry used for the crystalline silicon solar cell back electrode consists of the following components in percentage by weight: 40-70wt% of silver plating copper powder, 2-10wt% of inorganic lead-free glass powder and 25-50wt% of organic carrier, wherein the organic carrier is the mixture of solvent, thickening agent and additive, and the prepared electrocondution slurry printing back electrode has the advantages of big thickness, small bulk resistance, excellent soldering resistance, strong welding adhesive force and silver ion migration resistance. Meanwhile, after cell pieces are subjected to series welding, an assembly has the advantages of higher stability and stronger anti-aging capability.

The invention discloses a super-thermite Al / PbO nano-composite energetic material and a preparation method thereof. The super-thermite Al / PbO nano-composite energetic material consists of nano-grade aluminum powder and PbO, wherein the molar ratio of aluminum powder to PbO is (1:3)-(1:1), the grain diameter of aluminum powder is 20-100nm, and the grain diameter of obtained nano-composite energetic material is 50nm-150nm. The method comprises the following steps: respectively dissolving organic or inorganic lead salt and organic or inorganic base in alcoholic solution; dissolving completely, mixing the alcoholic solution of the lead salt and the base to generate lacte sol; and finally adding nano aluminum powder, completely mixing, filtering, washing and drying. The method has simple process, convenient operation and high safety performance and is easy to control, and the obtained nano-composite energetic material Al / PbO has excellent catalytic effect on the combustion of a double-base solid propellant when being taken as a combustion catalyst, thus significantly improving the burning speed of the propellant and reducing the pressure exponent.

The invention provides a preparation method of wholly-inorganic lead-containing halide perovskite quantum dot fluorescent powder. The preparation method comprises the following steps: S1, adding metal halides CsX and PbX2, alkyl phosphoric acid and an amine type surfactant into N,N-dimethylformamide, thus obtaining a precursor solution; S2, adding the precursor solution into methylbenzene, thus obtaining wholly-inorganic lead-containing halide perovskite quantum dot solution; S3, centrifuging the wholly-inorganic lead-containing halide perovskite quantum dot solution in S2, and carrying out self assembly to form the wholly-inorganic lead-containing halide perovskite quantum dot fluorescent powder after washing. The invention provides a simple precipitation method for preparing wholly-inorganic lead-containing quantum dot and organic phosphate compound-fluorescent powder. According to the preparation method provided by the invention, the reaction temperature is lower, the reaction time is shorter, the operation is simple, the repetition rate is high, and volume production can be realized; the fluorescent powder synthesized in the invention not only has higher fluorescence quantum efficiency, narrowband emission and wide color gamut, but also has strong water stability and strong thermal stability.

The invention belongs to the field of nano materials and devices, discloses a construction method of a high-performance hybrid photoelectric detector and a regulation and control strategy thereof, andfurther discloses a high-performance hybrid photoelectric detector based on all-inorganic lead halide perovskite nanocrystals. The high-performance hybrid photoelectric detector comprises a single MoS2 layer and a CsPbX3 (X = Cl, Br, I) perovskite nanocrystal layer, wherein the single MoS2 layer is a 2D material, the CsPbX3 nanocrystal layer is a 0D material, and the single MoS2 layer and the CsPbX3 nanocrystal layer are compounded by constructing Van der Waals heterojunction. According to the invention, through exploration and improvement of key materials used for forming heterojunctions bycooperating with single-layer MoS2 and different process steps adopted by the characteristic factors of the key materials, the performance-adjustable / optimized hybrid photoelectric detector is realized. In essence, due to effective control on the light capture capability of the perovskite nanocrystal layer and exciton separation and charge transfer of photon-generated carriers at the 0D perovskitenanocrystal / 2D single-layer MoS2 heterojunction interface, the light response performance of the hybrid photoelectric detector is directly influenced.

The invention discloses a method for preparing a layered structure inorganic perovskite negative electrode material by using a gas phase method, and relates to the technical field of preparation of lithium ion battery negative electrode materials. The method comprises: sequentially or simultaneously depositing lead bromide and cesium bromide on a copper foil substrate under a vacuum condition through a gas phase method, and carrying out heating annealing in air to obtain the layered structure inorganic perovskite negative electrode material. According to the present invention, according to theprinciples of physical vapor deposition and chemical vapor deposition, inorganic lead bromide and cesium bromide are used as raw materials and are deposited on the surface of the copper foil substrate through heating evaporation, the evaporation rate, the deposition thickness and the thickness ratio are regulated, and the subsequent annealing treatment is performed to prepare the dense and uniform pure inorganic perovskite material. With the applications of the layered structure inorganic perovskite negative electrode material in lithium ion battery negative electrode materials, good thermodynamic stability and excellent physical and chemical properties can be achieved, and the process is simple.

The invention discloses a chemical synthesis method for an environment-friendly inorganic lead-free halide perovskite thin film. The chemical synthesis method comprises the steps of (1) dissolving SnX<2> into an organic solvent, and performing magnetic stirring until the SnX<2> is fully dissolved; (2) adding CsX and stirring in a light-shading condition to obtain a CsSnX<3> / Cs<2>SnX<6> inorganic lead-free halide perovskite precursor solution; (3) performing ultrasonic cleaning on a substrate material, and drying by nitrogen; (4) putting the substrate material into an ultraviolet ozone cleaner to be subjected to radiation treatment; (5) paving the CsSnX<3> / Cs<2>SnX<6> inorganic lead-free halide perovskite precursor solution on the bottom surface of the substrate material, and performing spin coating; and (6) heating the material and performing thermal insulation for a certain time, and cooling to room temperature to obtain the CsSnX<3> / Cs<2>SnX<6> inorganic lead-free halide perovskite thin film. The CsSnX<3> / Cs<2>SnX<6> inorganic lead-free halide perovskite thin film prepared by the chemical synthesis method is high in stability, low in cost, low in equipment requirement, green, environment-friendly and pollution-free, and suitable for large-scale industrial production.

The invention discloses a preparation method for a flexible LED array based on an inorganic semiconductor material. The preparation method comprises the steps of growing an LED epitaxial wafer with a sacrificial layer on a semiconductor substrate, forming annularly-patterned photoresist mask by photoetching, and etching until reaching the lower contact layer of the LED epitaxial wafer; manufacturing a side passivating layer through a photoetching process; forming a patterned metal pattern, and forming ohmic contact after performing annealing and alloying; etching an annular low table surface and exposing the sacrificial layer; etching the sacrificial layer for a certain length; spin coating a flexible polymer material; etching a polymer material covering an inner ring and the upward side of partial metal electrode to expose partial metal electrode for preparing metal interconnection; performing metal sputtering and patterning processing for preparing LED unit interconnection; spin coating the flexible polymer material; exposing the inner ring sacrificial layer; etching the residual sacrificial layer; peeling off the inorganic LED array coated with the flexible polymer; and completing the preparation for the inorganic LED array.

The invention belongs to the field of LED devices, and discloses a full-inorganic LED packaging structure. The full-inorganic LED packaging structure comprises a box dam type copper coated ceramic substrate, an LED chip in the copper coated ceramic substrate, plane quartz glass at the top of the copper coated ceramic substrate and a first metal layer on the lower surface of the plane quartz glass,wherein the first metal layer has a size equal to the size of a contact area between the plane quartz glass and the copper coated ceramic substrate; the first metal layer comprises Cr, Pt and Au metal layers in sequence from top to bottom; and the total thickness of the first metal layer is 0.9-2 microns. The invention furthermore discloses a preparation method of the full-inorganic LED packagingstructure, and the preparation method comprises the steps of carrying out solid phase crystallization on the LED chip, preparing the first metal layer and completing LED packaging. The invention aimsat solving the technical problem that the LED devices obtained through LED packaging technologies in the prior art are low in reliability and easy to permeate air and moisture.

The invention discloses an inorganic lead-free double perovskite thin film, a solar cell and a preparation method of the solar cell. The preparation method of the inorganic lead-free double perovskitethin film comprises the following steps: synthesizing double perovskite Cs2AgBiBr6 crystal powder; putting the double perovskite Cs2AgBiBr6 crystal powder into an evaporation boat of a reaction chamber, vacuumizing the reaction chamber, heating a substrate to a preset temperature, heating the double perovskite Cs2AgBiBr6 crystal powder until the double perovskite Cs2AgBiBr6 crystal powder is evaporated, and preliminarily forming an initial Cs2AgBiBr6 film on the substrate; and transferring the initial Cs2AgBiBr6 thin film into a nitrogen glove box, and placing the nitrogen glove box on a heating plate for annealing treatment to finally obtain the inorganic lead-free double perovskite thin film. The inorganic lead-free double perovskite thin film which is flat, compact, high in crystallinity and good in photoluminescence response and accords with an ideal stoichiometric ratio is prepared by adopting a vacuum single-source thermal evaporation method.

The invention provides a totally-inorganic LED packaging method. The method includes following steps: placing an LED chip in a cleaned metal dam support by employing a die bonder; performing plasma cleaning after die bonding; dispensing silver-copper nanometer paste: uniformly dispensing the silver-copper nanometer paste on a welding surface of the metal dam support by employing the dispenser; preparing a metallized frame quartz optical window; and performing low-temperature sintering curing: covering the welding surface of the metal dam support by the metallized frame quartz optical window prepared in step 4 by employing the die bonder, and performing low-temperature sintering curing in a nitrogen atmosphere or a vacuum atmosphere. The invention also provides a totally-inorganic LED packaging structure prepared by the method. According to the method and the structure, the metallized frame quartz window and the metallized support are connected through the silver-copper nanometer paste,the usage of organic glue is avoided, the ultraviolet aging resistance of the packaging structure is improved, the failure risk is reduced, the process is simple, the usage is convenient, and the method and the structure can be applicable to mass production.

An active matrix LED display formed on a substrate material having flexibility is provided. The display includes a pixel forming unit having at least one pixel driving circuit and at least one inorganic LED element electrically connected with the pixel driving circuit. The pixel driving circuit is formed of at least one thin film transistor, and the thin film transistor is an organic thin film transistor.

The invention discloses a preparation method of an inorganic perovskite derivative phase used as a negative electrode material for lithium ions, which relates to the technical fields of preparation and research of the negative electrode material of lithium ion batteries and the like. The precursor of lead bromide and cesium bromide was evaporated by vacuum thermal deposition process and depositedon the copper foil of cathode current collector. The cathode material was homogeneous and dense by subsequent heating and baking. The invention utilizes the principle of chemical solid state reactionand thermal evaporation vapor deposition, Using inorganic lead bromide and cesium bromide as raw materials, the pure inorganic perovskite materials were prepared by vacuum heating and evaporation on current collector copper foil substrate. The evaporation rate of precursor material was adjusted and the thickness and thickness ratio of the precursor material were adjusted during the reaction. Applying it to the cathode material of lithium ion battery, it exhibits good thermodynamic stability and excellent physicochemical properties, and the process is simple.

The invention belongs to the technical field of materials and provides a preparation method of a BaZrS3 thin film. The method comprises the following steps that S1, BaZrO3 is taken as a reaction material and vulcanized into a target material; S2, film coating treatment is performed by means of the target material obtained in the step S1; and S3, secondary vulcanization is performed on a product obtained in the step S2. The invention provides the preparation method of the BaZrS3 thin film for the first time, the BaZrO3 is taken as the reaction material, the BaZrS3 inorganic lead-free chalcogenperovskite material is obtained through vulcanization, film coating treatment and secondary vulcanization treatment, and the material is excellent in visible light absorption capability and has the large application prospects in the field of solar batteries.

The invention discloses a thermochromic rope and a production method thereof, and relates to the field of ropes. The thermochromic rope comprises a rope base (1) and a thermochromic coating (2). The thermochromic coating (2) is coated on the outer surface of the rope base (1). Inorganic lead chromate is adopted as thermochromic pigment to configure coating formulations, the rope base is coated and processed, the obtained rope is good in thermochromic effect and can change colors when the temperature changes, on the condition of high temperature and extreme hot, when the temperature reaches the limited using temperature of the rope, users can be alarmed. The thermochromic rope is simple in production process, convenient and rapid to operate, low in cost, and is adaptable for large-scale promotion and application.

The invention discloses an all-inorganic lead-halide perovskite light-emitting diode comprising a conductive substrate, a carrier transport layer, an electrode modification layer and an electrode arranged in sequence according to a layered structure. The middle of the carrier transport layer is provided with an active luminescent layer which is a part of lead-halide perovskite in which the lead halide is replaced by an alkaline earth metal halide. According to the invention, the lead halide in a part of the perovskite is replaced by the alkaline earth metal halide, on one hand, the bromine defect formation energy change in the perovskite becomes high, which means that a bromine defect is more difficult to form, so the defect state of the perovskite is significantly reduced, the fluorescence is enhanced, on the other hand, the morphology of a film is significantly improved, pores are reduced, the leakage current is lowered, at the same time, since the fluorescence is enhanced, the brightness is increased, and finally, the efficiency of the entire device is improved.

A method of making an inorganic light-emitting diode display having a plurality of light-emitting elements including providing a substrate, and forming a plurality of patterned electrodes over the substrate. A raised area is formed around each patterned electrode to provide a well before depositing a dispersion containing inorganic, light-emissive core / shell nano-particles into each well. The dispersion is dried to form a light-emitting layer including the inorganic, light-emissive core / shell nano-particles. An unpatterned, common electrode is formed over the light-emitting layer. The light-emitting layer emits light by the recombination of holes and electrons supplied by the electrodes.

The molar composition of the inorganic lead-cesium halide nanocrystalline composite chalcogenide glass ceramic material disclosed by the invention is shown as a chemical formula, (1-x-y-z)GeS2.XSb2S3.YGa2S3.ZCsPbX3, wherein x = 0.15-0.75, y = 0.05-0.2, z = 0.05-0.1, and X is Cl, Br or I; and CsPbX3 is compounded in the chalcogenide glass ceramic material in the form of separated nanocrystalline. The material is transparent in a spectral range of 2-10 micrometers and has good thermal and chemical stability and good fracture toughness, so that the material is suitable for rare earth ion doping to research and develop novel mid-infrared light-emitting or laser materials and related quantum dot light-emitting materials. The preparation method of the material comprises the following steps: by taking GeS2-Sb2S3-Ga2S3 as a glass matrix, adding a CsPbX3 component which is nearly saturated; preparing basic chalcogenide glass by a melting quenching method; and performing crystallization heat treatment so that CsPbX3 nanocrystals are controllably separated out. According to the preparation method of the material, proper glass composition can be designed and selected according to functional requirements, so that the size and distribution of precipitated CsPbX3 crystal grains are controlled.

The invention relates to a method for preparing lead-bearing radiation-proof organic glass, belonging to the functional high molecular material polymerization technical field. The method synthesizes organic carboxylic acid lead salt through organic synthesis and modification of inorganic lead salt, adds the organic carboxylic acid lead salt into water-in-oil type microemulsion which consists of methyl methacrylate (MMA), a surfactant, an auxiliary surfactant, water and so on, initiates under the condition of a thermal initiator and polymerizes an organic glass sheet. Moreover, the performanceof the organic glass sheet is tested, and the result reveals that the impact strength, the tensile strength, the light transmittance, the refractive index, the glass transition temperature and the radiation-proof property of the organic glass prepared by polymerization of the microemulsion are all superior to those of common organic glass. The invention provides a novel method for synthesizing functional high molecular materials. The method has a simple and convenient technique; the synthesized sheet has superior performance, can make up for the defects of an inorganic radiation-proof glass sheet, and is hopeful to become practical novel radiation-proof materials.

The invention discloses a high-fluorescence-efficiency inorganic lead-free perovskite material and a preparation method thereof, and belongs to the technical field of perovskite crystal material preparation. The high-fluorescence-efficiency inorganic lead-free perovskite material is Cu-doped Cs2AgI3 perovskite, and the doping amount of Cu is 0.09%. The preparation method comprises the following steps: mixing cesium iodide and silver iodide, carrying out ball milling, adding cuprous iodide, hydroiodic acid and microliter hypophosphorous acid, carrying out sealed heating to 150-200 DEG C, cooling to room temperature, annealing, and carrying out cooling treatment at -10 to -35 DEG C for 1-3 hours. The Cs2AgI3: Cu crystal with high purity and enhanced fluorescence efficiency is obtained, emitsbright blue fluorescence under the excitation of a 302 nm ultraviolet lamp, and has the advantages of no lead or chromium, high quantum efficiency, environmental stability and the like.

An inorganic light-emitting diode (iLED) pixel structure includes a transparent pixel substrate having an LED surface, an emission surface opposite the LED surface, and one or more sides other than the LED surface and the emission surface that are not parallel to the LED surface or the emission surface. One or more iLEDs are mounted on the pixel substrate and each iLED has an emission side adjacent to the LED surface of the pixel substrate to emit light into the pixel substrate and out of the emission surface. A reflector is disposed on at least a portion of the one or more sides.

The invention discloses a method for simply synthesizing CsAgCl2 pure-phase inorganic lead-free perovskite, belonging to the technical field of preparation of semiconductor nanomaterials. The method comprises the following steps: firstly, mixing cesium chloride and silver chloride according to a molar ratio of 1: 1, then adding oleylamine, carrying out grinding, wherein the formed mixture in the form of fluffy white powder gradually becomes compact and is attached to the wall of a container, and finally becomes fluffy white powder with the grinding time, and stopping grinding; putting a sampleobtained in the previous step into a vacuum oven, and carrying out heat treatment at 60-300 DEG C for 2 h; and immediately carrying out cooling treatment at -10 DEG C to -40 DEG C for 1-2 h to obtainthe CsAgCl2 inorganic perovskite with high purity and high fluorescence efficiency. The method has the advantages that the method is simple, operation is easy, energy consumption is low, and the synthesized CsAgCl2 inorganic perovskite is pure in phase; and the method has important significance.

The invention discloses a low critical pressure double base propellant, which belongs to the field of propellants. The low critical pressure double base propellant comprises the following components by weight percent: 40%-60% of nitrocotton, 15%-30% of nitroglycerin, 1%-3% of stabilizing agent, 5%-20% of cosolvent, 0.5%-3% of vaseline or zinc stearate, 1%-4% of organic or inorganic lead salt or copper salt, 0.5%-1.5% of metallic nickel powder, and 0.5%-2.5% of metallic oxide. The double base propellant has critical pressure less than 3MPa at low temperature (minus 40 DEG C).

The invention provides an all-inorganic LED lamp and a packaging method thereof. The all-inorganic LED lamp comprises a base and an LED chip; the base is provided with a bowl; the LED chip is arrangedinside the bowl and electrically connected with the base; a glass cover plate for sealing the LED chip is arranged on the bowl; and the surface of the bowl is coated with a solder, and the glass cover is bonded to the bowl through the solder. According to the all-inorganic LED lamp provided by the invention, the glass cover plate and the bowl are bonded together through the solder, so that the application of organic materials such as silica gel can be avoided, and the all-inorganic LED lamp can be used for packaging of devices which are not suitable for being packaged by using organic material, and solves the problem that related device packaging materials are easy to age and go bad in a severe environment.