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BaZrS3 thin film and preparation method and application thereof

A thin-film, S21 technology, applied in the field of materials, can solve the problems of unsuitability for photovoltaic applications, increase the band gap, poor thermodynamic stability, etc., and achieve the effects of excellent visible light absorption capacity and great application prospects.

Active Publication Date: 2019-06-28
扬州旭磁智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second type is multi-component thin-film solar cells, mainly including GaAs, InP, copper indium gallium selenium CIGS, cadmium telluride CdTe solar cells, etc. These types of cells have high conversion efficiency, stable device performance, and thinner light-absorbing layers. It can greatly reduce the consumption of raw materials. It is a relatively promising thin-film solar cell in the industry. However, some elements of the materials used in this type of cell are toxic or have scarce reserves, which limits the promotion and use of large areas.
However, the commercialization of solar cells based on perovskite materials still faces two obstacles that need to be effectively addressed.
One is that the material is easy to decompose and dismutate under heat, humidity and other environments, which can be attributed to the poor thermodynamic stability of the material itself in essence.
Although the internal mechanism of its poor stability is not yet clear, the existence of small organic molecules probably played a big role; the second is the toxicity problem caused by the material containing Pb
The direct solution is to use non-toxic homogenous elements (such as Sn 2+ ) to replace Pb 2+ , but the material due to Sn 2+ easily oxidized to Sn 4+ , the performance drops significantly; the Pb 2+ Replaced by other +2-valent cations of comparable size (such as Ba 2+ ), unsuitable for photovoltaic applications due to the significantly increased bandgap

Method used

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  • BaZrS3 thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] 1. BaZrO 3 The powder is placed in the chemical vapor deposition furnace, the second gas valve is opened, argon is introduced until the oxygen in the furnace is evacuated, and the chemical vapor deposition furnace is heated to 1100°C;

[0058] 2. Close the second gas valve and open the first gas valve, and pass the argon gas into the 2 In the cold trap of the solution, keep warm;

[0059] 3. When the temperature in the furnace drops to 800°C, close the first gas valve and open the second gas valve, and let the argon flow into the chemical vapor deposition furnace until the temperature in the furnace drops to room temperature.

[0060] 4. Take out the product processed in the previous step, and clean it with acetone and alcohol; ball mill, the ball milling speed is 450r / min, and the ball milling time is 3h; dry, the drying time is 2h; granulate, add an appropriate amount of PVA during granulation; Tablets, the tableting pressure is 30Mpa, and the diameter of the tablet...

Embodiment 2

[0064] 1. BaZrO 3 The powder is placed in the chemical vapor deposition furnace, the second gas valve is opened, argon gas is introduced until the oxygen in the furnace is evacuated, and the chemical vapor deposition furnace is heated to 1000°C;

[0065] 2. Close the second gas valve and open the first gas valve, and pass the argon gas into the 2 In the cold trap of S gas, keep warm;

[0066] 3. When the temperature in the furnace drops to 800°C, close the first gas valve and open the second gas valve, and let the argon flow into the chemical vapor deposition furnace until the temperature in the furnace drops to room temperature.

[0067] 4. Take out the product processed in the previous step, and clean it with acetone and alcohol; ball mill, the ball milling speed is 450r / min, and the ball milling time is 3h; dry, the drying time is 2h; granulate, add an appropriate amount of PVA during granulation; Tablets, the tableting pressure is 30Mpa, and the diameter of the tableting...

Embodiment 3

[0071] 1. BaZrO 3 The powder is placed in the chemical vapor deposition furnace, the second gas valve is opened, argon gas is introduced until the oxygen in the furnace is exhausted, and the chemical vapor deposition furnace is heated to 800°C;

[0072] 2. Close the second gas valve and open the first gas valve, and pass the argon gas into the 2 In the cold trap of the solution, keep warm;

[0073] 3. When the temperature in the furnace drops to 800°C, close the first gas valve and open the second gas valve, and let the argon flow into the chemical vapor deposition furnace until the temperature in the furnace drops to room temperature.

[0074] 4. Take out the product processed in the previous step, and clean it with acetone and alcohol; ball mill, the ball milling speed is 450r / min, and the ball milling time is 3h; dry, the drying time is 2h; granulate, add an appropriate amount of PVA during granulation; Tablets, the tableting pressure is 30Mpa, and the diameter of the tab...

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Abstract

The invention belongs to the technical field of materials and provides a preparation method of a BaZrS3 thin film. The method comprises the following steps that S1, BaZrO3 is taken as a reaction material and vulcanized into a target material; S2, film coating treatment is performed by means of the target material obtained in the step S1; and S3, secondary vulcanization is performed on a product obtained in the step S2. The invention provides the preparation method of the BaZrS3 thin film for the first time, the BaZrO3 is taken as the reaction material, the BaZrS3 inorganic lead-free chalcogenperovskite material is obtained through vulcanization, film coating treatment and secondary vulcanization treatment, and the material is excellent in visible light absorption capability and has the large application prospects in the field of solar batteries.

Description

technical field [0001] The invention belongs to the field of material technology, in particular to BaZrS 3 Thin films and methods for their preparation and applications. Background technique [0002] At present, solar cells can be divided into three types of solar cells according to the classification of light-absorbing layer materials. The first type is silicon-based solar cells, which have mature technology and high photoelectric conversion efficiency, and are also a type of cells that have been commercially applied in the market. The second type is multi-component thin-film solar cells, mainly including GaAs, InP, copper indium gallium selenium CIGS, cadmium telluride CdTe solar cells, etc. These cells have high conversion efficiency, stable device performance, and thinner light-absorbing layers. It can greatly reduce the consumption of raw materials, and it is a relatively promising thin-film solar cell in the industry. However, some elements of the materials used in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06H01L31/032
Inventor 张垠于忠海曹开颜王鼎臣
Owner 扬州旭磁智能科技有限公司
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