Preparation method for flexible LED array based on inorganic semiconductor material
An inorganic semiconductor and LED array technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of complex preparation process, and achieve the effects of good repeatability, high stability and large structure area
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[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0030] The invention proposes a method for preparing an inorganic flexible LED array, that is, using epitaxial growth technology to grow an LED epitaxial wafer with a sacrificial layer on a semiconductor substrate; cleaning the LED epitaxial wafer, and photoetching to form a ring patterned photoresist mask , etch to the lower contact layer of the LED epitaxial wafer; the side passivation layer is made by photolithography and etching process, which can effectively reduce the side leakage current caused by the side oxide layer; the patterned metal pattern is formed by ultrasonic stripping method or metal corrosion method, annealed Form ohmic contacts after alloying; photolithography forms a photoresist mask, etches the ring-...
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