97 results about "Thermal deposition" patented technology

A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

A process for the thermal deposition coating of a workpiece, said process comprising the steps of: (c) thermally depositing a coating on a metallic surface of a workpiece from a deposition head wherein at least one condition selected from the group of: coating deposition rate onto said surface, relative motion between the surface and said deposition head, and cryogenic coolant application rate onto said workpiece is controllable; (d) substantially simultaneously measuring temperatures at a plurality of locations over the metallic surface of the workpiece; (c) determining an average temperature of the temperatures measured in step (b); (d) comparing the average temperature to a preselected minimum temperature and a preselected maximum temperature for the workpiece; and (e) adjusting at least one of the controllable conditions if said average temperature is not between the preselected minimum temperature and the preselected maximum temperature for the workpiece. Standard deviations of all temperature readings and controlling the relative motion speed between the thermal coating deposition head and the workpiece provide another improvement for obtaining temperature uniformity over the workpiece surface.

Disclosed is a process for controlling selective application of heat into a material, preferably into a biological material, having an ultrasonic-wave generating unit which couples the ultrasonic waves into the material, an ultrasonic-wave-detecting unit which detects the ultrasonic waves emerging from the material and an evaluation unit which generates information-providing parameters on the basis of the detected ultrasonic waves which provide information about the thermal and structural changes inside the material.

The invention discloses first wall part with thick wolfram coating or low-activation steel thermal deposition material and opposite manufacture method. Wherein, selecting base plate as low-activation martensitic/ferritic steel to clear with transferred arc; using 70% stainless steel powder and 30% wolfram powder as interlayer of 0.5mm; spraying plasma arc has center temperature as 15000K speed as 500m/s, average particle size of wolfram powder is 10~15 microns, the coating has thickness as 2mm, density as 78~88% of body material and oxygen content is 0.06~0.15%; during whole spraying process, using active water cooling to control base plate temperature under 500Deg. As low-activation steel both as structure support material and thermal deposition material, this invention solves large area linkage key-problem and can bear stably long-time action of 1MW/m2 thermal load given active cooling condition.

A novel nickel-carbon electrode, and methods for making the same, have been developed. The nickel-carbon electrode comprises an active mass (e.g., a nickel oxyhydroxide, hydroxide or oxide) deposited to a carbon foam using any one of chemical deposition, thermal deposition or electrochemical deposition. The nickel-carbon electrode is formed or “activated” through a series of charge-discharge cycles. The nickel-carbon electrode is comparable in volumetric capacities (mAh/cc) with commercial nickel electrodes but higher in gravimetric capacities (mAh/g). The nickel-carbon electrode may be used in rechargeable nickel-based batteries which have applications in cordless appliances, portable devices, standby power systems, the aerospace industry, and hybrid electric vehicles.

Embodiments provide a method of producing micro-sized Si—C composites or doped Si—C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO_x (0<x<2) to a silicon framework by calcination, followed by etching and then by carbon filling by thermal deposition of gas containing organic molecules that have carbon atoms.

The invention relates to a high-dispersion type catalyst for liquid phase hydrogenation of an octanol mixture and preparation and application thereof. According to the invention, gamma-Al2O3 is used as a carrier, rare earth element lanthanum is used as a carrier modification auxiliary agent, nickel is used as a main active component, and copper and manganese are used as active auxiliary agents; in terms of mass (100%), the carrier accounts for 40 to 95% of the catalyst, the carrier modification auxiliary agent rare earth element lanthanum accounts for 0.1 to 12% in terms of La2O3, the content of the main active component nickel accounts for 1 to 30% in terms of NiO, the content of the active auxiliary agent Cu is 0.5 to 15% in terms of CuO, and content of the active auxiliary agent Mn is 0.5 to 10% in terms of MnO. According to the invention, through rare earth element surface modification and hydro-thermal deposition, the size and dispersity of active component particles can be effectively controlled, the content of surface active species is increased, and the catalyst has higher catalytic hydrogenation activity and stability on unsaturated components like octenal, isooctanol and isooctenal in the octanol mixture.

The invention discloses a three-dimensional porous titanium substrate lead dioxide electrode which comprises a porous titanium substrate, wherein interlayers are arranged on two side surfaces of the porous titanium substrate in a thermal deposition manner; the interlayers consists of a tin-antimony oxide; a lead dioxide surface active layer is arranged on the interlayer on one side surface of the porous titanium substrate in an electric deposition layer. The invention further provides a preparation method of the three-dimensional porous titanium substrate lead dioxide electrode, and further provides application of the three-dimensional porous titanium substrate lead dioxide electrode in musk ketone in degraded wastewater. In the musk ketone in the degraded wastewater, the three-dimensional porous titanium substrate lead dioxide electrode is taken as an anode, copper foil as a cathode and a sodium sulfate solution as an electrolyte, electrocatalytic oxidation is implemented for 1-2 hours, and then degradation treatment on the musk ketone in the wastewater can be completed. When the musk ketone is degraded by using the three-dimensional porous titanium substrate lead dioxide electrode under an electrifying condition, the degradation time is short, the degradation rate is high, and the operation is convenient.

The invention discloses a pulse gas laser intracavity flow field measurement device based on a four-quadrant detector. The pulse gas laser intracavity flow field measurement device comprises a detection light source, a detection light receiving system and a signal processing system. A light beam sent out by the detection light source is parallel to the optical axis direction of a pulse gas laser. The detection light receiving system comprises a four-quadrant photoelectric detector, a photosensitive face faces towards a detection area and is perpendicular to a detection light beam to be used for receiving the detection laser light beam, and signals of the four-quadrant photoelectric detector can be processed by a signal processing system to obtain laser wave transmission characteristic parameters. The pulse gas laser intracavity flow field measurement device is simple in structure and convenient to operate. The four-quadrant photosensitive sensor simplifies an experiment device. Laser wave disturbance and transmission direction of the laser wave can be judged according to movement of the center of a light spot of the four-quadrant photosensitive detector to improve detection flexibility. Simultaneously, a dichroic mirror is used to separate the detection light beam form laser of the pulse gas laser. The laser oscillation can simultaneously obtain real-time test results to overcome the defect that thermal deposition in non-laser resonant cavity test discharging area is high.

Disclosed is a novel metallic film preparation technology on liquid phase substrate surface, which comprises using liquid phase material whose saturated vapor tension is lower than the vacuum evaporation pressure as substrate, employing magnetron sputtering or thermal deposition method, evaporating the metal atoms with energy of argon ions in high speed movement or tungsten filament heated by electric current, then depositing the evaporated metal atoms onto liquid phase substrate surface, finally growing metallic film having polycrystalline grain structure through diffusion, core formation, rotation and agglomeration. The film has substantially no internal stress.

A method is described for forming duplex layers including an interlayer and a corrosion resistant boundary layer on a nuclear fuel rod cladding tube for use in a water cooled nuclear reactor. The method includes forming, by thermal deposition or physical vapor deposition, on the exterior of a substrate, an inner interlayer with Mo, Ta, W or Nb or other particles, and forming, by thermal deposition or physical vapor deposition, on the interlayer, an outer corrosion resistant layer with particles selected from the group consisting of Cr, a Cr alloy, and combinations thereof. The interlayer prevents eutectic formation between the corrosion resistant layer and the substrate.

In order to solve the problem of a conventional attachment structure of a fuel tank made of resin, the present invention is an attachment structure of a component of a fuel tank made of resin where a connection portion with a tank main body made of resin is formed of a thermally depositable material, and which tank comprises a joint portion connected with the tank main body by a thermal deposition and an inner tubular member supported by the joint portion and housed in the tank main body, wherein a movement regulation mechanism for regulating a movement in an axial direction of the inner tubular member for the joint portion is provided at least at one of the joint portion and the inner tubular member, and the joint portion and the inner tubular member are formed by an integral molding.

The invention relates to a chalcogenide phase change film capable of being used for multispectral active optical regulation and a preparation method, and belongs to the field of optical films and optical phase change materials. The chemical formula of the phase change thin film is Sb<x>S<100-x>, wherein x is greater than 20 and less than 50. The amorphous high-quality optical thin film is preparedby adopting a high-vacuum rapid thermal deposition method. The film can be reversibly converted between a high refractive index (amorphous state) and a low refractive index (crystalline state) underthe thermal action of an external field. The crystalline state and the amorphous state of the material film can have obvious difference in refractive index within the range of 0.55-25 [mu]m, the lighttransmittance is good, the material film can be used for preparing a multispectral light field active regulation and control device, and the development requirements for integration, miniaturizationand multifunction of a traditional light field regulation and control device can be met.

The invention relates to a connection structure between the elements of resin fuel box. Wherein, the connection part is made from thermal deposition material, while said fuel box comprises a connecting head connecting the main body via thermal deposition, a inner tube supported by connecting head and contained inside the main body, and at least one motion adjuster at the connecting head and the inner tube to adjust the axial motion of inner tube along the connecting head. The connecting head and the inner tube are made by integrated molding.

The present invention relates to a component of a concrete delivery system comprising a substrate made of relatively thin gauge carbon steel or aluminum, and a protective coating of amorphous, nano or near-nanoscale steel, or mixtures thereof, overlying the substrate, wherein the coating may be formed by thermal deposition process from multi-component glass forming steel alloys. The protective coating may also be heat treated to increase wear life.

The invention discloses a preparation method of an inorganic perovskite derivative phase used as a negative electrode material for lithium ions, which relates to the technical fields of preparation and research of the negative electrode material of lithium ion batteries and the like. The precursor of lead bromide and cesium bromide was evaporated by vacuum thermal deposition process and depositedon the copper foil of cathode current collector. The cathode material was homogeneous and dense by subsequent heating and baking. The invention utilizes the principle of chemical solid state reactionand thermal evaporation vapor deposition, Using inorganic lead bromide and cesium bromide as raw materials, the pure inorganic perovskite materials were prepared by vacuum heating and evaporation on current collector copper foil substrate. The evaporation rate of precursor material was adjusted and the thickness and thickness ratio of the precursor material were adjusted during the reaction. Applying it to the cathode material of lithium ion battery, it exhibits good thermodynamic stability and excellent physicochemical properties, and the process is simple.

The present invention provides a wave of correction devices, which include lens, cooling cavity, driver, water pipe, base, water inlet, outlet, and support;The other end is fixed with the base; one end of the water pipe is connected to the cooling cavity, and the other end is fixed with the base; the base is fixed on the support;The water pores on the seat correspond to one -to -one pores.This scheme can load different loads on the drive according to the application requirements. The mirror movement moves up and down under the action of the driver, so that the mirror surface deforms, thereby correcting the wave surface.The influence, avoid the introduction of unnecessary extra extension.

The invention relates to a refractory hard metal in powder form comprising particles having an average particle size of 0.1 to 30 mu m and each formed of an agglomerate of grains with each grain comprising a nanocrystal of a refractory hard metal of the formula (I): AxByXz wherein A is a transition metal, B is a metal selected from the group consisting of zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, manganese, tungsten and cobalt, X is boron or carbon, x ranges from 0.1 to 3, y ranges from 0 to 3 and z ranges from 1 to 6. The refractory hard metal in powder form according to the invention is suitable for use in the manufacture of electrodes by thermal deposition or powder metallurgy.

The invention discloses a perovskite film solar cell comprising a first electrode; a perovskite light-absorbing layer which is arranged on the first electrode; a first electron transmission layer which is arranged on the perovskite light-absorbing layer; and a second electrode which is arranged on the first electron transmission layer, wherein the material of the first electron transmission layer is C60 doped with the organic micromolecule dopant. The preparation method of the solar cell comprises the steps that the organic micromolecule dopant and the C60 are deposited after evaporation by applying the double source vacuum thermal deposition technology, and the first electron transmission layer is prepared and formed on the perovskite light-absorbing layer. The C60 doped with the organic micromolecule dopant is used as the electron transmission layer so that the requirement of photocurrent output of the device can be met, the cost of the device can also be greatly reduced and thus industrial popularization and application of the perovskite film solar cell are facilitated.

Gold (III) emitters showing high emission quantum efficiency and stable in thermal deposition process are described. High performance OLEDs can be fabricated from these emitters.

There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si₃N₄, SiO₂, and SiON and non-&electric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.