33 results about "Thermal deposition" patented technology

Provided are methods for low temperature thermal deposition of silicon-containing films. The methods provide selective deposition on a variety of substrates with high deposition rates and short cycle times.

The application relates to a preparation method of a diffused island-shaped vanadium dioxide thermochromic film. The preparation method comprises the following steps: a precursor forming step: forming a vanadium oxide film with a thickness of 20-100 nm as a precursor on the surface of a substrate by a magnetron sputtering method, a thermal deposition method or a laser-induced vapor deposition method; a pretreatment step: heating the film to 600-950 DEG C at a temperature increasing rate of more than 80 DEG C / min in an annealing furnace with a pressure of 50 mTorr or less, then keeping the temperature for 5-30 min, and then cooling the film to 300-450 DEG C in the furnace to form the film into a diffused island shape; and an oxidation step: introducing oxygen into the annealing furnace to oxidize the film to obtain a vanadium dioxide film. The film prepared by the preparation method of the vanadium dioxide thermochromic film has good sunlight modulation efficiency and good light transmittance.

The application relates to a NiOOH / Ti-P-O nanotube array photoanode and a preparation method and application thereof. The preparation method comprises the following steps: S1, pretreated Ti sheets are sequentially subjected to anodic oxidation treatment and crystallization treatment to obtain a Ti-O nanotube array photoanode; S2, the Ti-O nanotube array photoanode is subjected to phosphating treatment, and a Ti-P-O nanotube array photoanode is obtained after cooling; and S3, the Ti-P-O nanotube array photoanode is immersed in a mixed solution containing a nickel source and urea for thermal deposition to obtain a NiOOH / Ti-P-O nanotube array photoanode. The NiOOH / Ti-P-O nanotube array photoanode can be widely applied to the field of photoelectrocatalytic water splitting. Compared with the prior art, the application provides a controllable preparation method with short time consumption, and the prepared product significantly enhances photoelectrochemical activity and improves photoelectrocatalytic efficiency.

To provide a semiconductor device and a method for manufacturing the semiconductor device capable of suppressing current collapses.SOLUTION: A method for a semiconductor device comprises: a step for forming a dielectric oxide film with a higher relative permittivity than silicon dioxide on a nitride semiconductor layer; a step for nitriding the dielectric oxide film to form a dielectric oxynitride film; a step for forming a first silicon nitride film on the dielectric oxynitride film by thermal deposition; a step for forming a second silicon nitride film on top of the first silicon nitride film; a step for forming openings in the second silicon nitride film and the first silicon nitride film that reach the dielectric oxynitride film; and a step for forming a gate electrode on the second silicon nitride film that contacts the dielectric oxynitride film through the openings.SELECTED DRAWING: Figure 1

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

The present application discloses a PECVD preparation process for an optical film and the optical film prepared therefrom, and relates to the field of optical film preparation. The PECVD preparation process for an optical film includes substrate preheating, deposition of SiO x Layer, SiN deposition x Layer, deposited SiO x N y Layer, deposited SiO x F y Layer, repeated deposition of SiO x N y Layer and SiO x F y Layer 3-8 and repeated deposition of SiO x Layer and SiN x The present invention can reduce the reflectivity of the optical film, increase the transmittance of the optical film in the wavelength range of 450-530nm, 600-700nm and 1000-1200nm, effectively reduce the internal stress between the film layers, improve the overall bonding strength and stability of the optical film, and help obtain an optical film that takes both optical performance and stability into consideration by arranging the film layers in a specific order and with specific thicknesses and matching the coating parameters of each film layer.

According to the method, an auxiliary solvent N, N-dimethylacetamide (DMAC) is added into a precursor solution for hydrothermal deposition of the antimony sulfide thin film to adjust the deposition rate, so that the thickness of the thin film is optimized, the morphology of the thin film is improved, the crystallinity is improved, the defect density of the thin film is reduced, and the performance of a device is improved. The antimony sulfide solar cell comprises a conductive substrate (including FTO and the like), an electron transport layer, an antimony sulfide solar cell absorption layer and a counter electrode. The DMAC can promote grain polymerization of the antimony sulfide thin film, increase the grain size and reduce electric leakage channels of the solar cell. And DMAC has the effect of adjusting the deposition rate, so that the reaction is slower to obtain a more appropriate thickness of the absorption layer. By constructing an effective antimony sulfide thin film solar cell structure, the device performance of the antimony sulfide solar cell is improved.

The invention relates to a photoinduced thermoelastic spectrum gas detection device based on incoherent fixed spectrum excitation, which comprises an incoherent light source module used for generating incoherent light with controllable power and light intensity modulation depth; the optical shaping module is used for shaping the incoherent light beam and effectively coupling the incoherent light into the sampling module; the gas absorption module is internally provided with a gas accommodating cavity for storing to-be-detected gas; the uncorrelated light is absorbed by the gas to be detected and then forms periodic thermal deposition on the sampling module, and the sampling module is used for collecting thermal elastic stress generated by the periodic thermal deposition and converting the thermal elastic stress into an electric signal; and the signal amplification and demodulation module is used for extracting and demodulating the electric signals acquired by the sampling module. The incoherent fixed spectrum light source is more uniform in light field distribution, wide spectrum output can cover a plurality of absorption peaks in a fixed spectrum range, and the incoherent fixed spectrum light source is insensitive to wavelength drift.

The invention provides a cartridge capable of reducing the possibility of generating a gap between a liquid introduction part and a liquid supply part of a printing apparatus, and a thermal deposition method of a sheet. The cartridge is provided with: a liquid storage part; a liquid supply unit; and a housing part including a wall part having an opening connected to the liquid supply part, a plurality of welding protrusions arranged along an outer edge of the opening in a state of being spaced apart from each other, and a plurality of thermal welding parts arranged along the outer edge of the opening in a state of being spaced apart from each other. The plurality of thermal welding parts are attached to a part of the surface of the plurality of welding convex parts and are arranged in a state of being separated from each other. And a sheet that covers the opening, the plurality of welded protrusions, and the plurality of heat-welded portions and is bonded to the plurality of welded protrusions in a peelable manner, the plurality of welded protrusions being portions that are not melted by heat welding among protrusions formed from a heat-weldable material, and the plurality of heat-weldable portions being bonded to the plurality of welded protrusions in a peelable manner. Each of the plurality of heat-welded portions is a portion formed by melting due to heat welding in the protruding portion before heat welding with the sheet, and a portion of the plurality of heat-welded portions is in contact with the sheet.

A method of forming a molybdenum-containing film is provided. The method includes, for example, thermally depositing a first film on a substrate surface at a first temperature less than or equal to about 400 °C, and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film at a second temperature greater than about 400 °C. The first film can comprise an elemental metal such as tungsten, molybdenum, ruthenium, or cobalt. The second film comprises a reaction product of a molybdenum-containing precursor and a reducing agent.

Sleeves that can be disposed on either end of a bushing to improve the wear characteristics and usable lifetime of the bushing is disclosed. During the use of the bushing, such as when a machine including the bushing is operated, the sleeves may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing is protected, at least in part, from wear and tear. The sleeves may include a bulk material, such as steel, with a hard coating thereon, such as hard chromium, tungsten carbide, or the like. The hard coating may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves, after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing.

The invention relates to a reflective fluorescent glass converter with heat dissipation through holes as well as a preparation method and application of the reflective fluorescent glass converter. The reflection type fluorescent glass converter comprises a heat dissipation substrate (4), a reflection layer (3), a fluorescent glass layer (2) and a scattering layer (1) which are stacked and arranged layer by layer, a penetrating heat dissipation through hole array is arranged on the heat dissipation substrate (4), and each heat dissipation through hole (5) is filled with high heat conduction metal. The heat dissipation performance of the fluorescent glass layer (2) is effectively improved through the heat dissipation through hole array and the filled high-heat-conduction metal, and the scattering layer (1) covering the surface of the fluorescent glass layer (2) is combined to assist heat conduction and heat dissipation. The problem that a single-side heat dissipation structure of a traditional reflection type fluorescent glass converter is prone to generating thermal deposition on the outer surface away from the heat dissipation substrate (4) under the high-power condition is thoroughly solved. The reflective fluorescent glass converter has the advantages of high light-emitting saturation threshold, high light extraction and the like, and can be applied to the fields of high-power laser illumination, laser display and the like.

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

To provide a surface treatment apparatus, a surface treatment method, an indirect heating deposition apparatus, and an indirect heating deposition method, capable of improving post-anneal processing.SOLUTION: A surface treatment apparatus includes an electron beam source 8, a detector 40, and a controller 31. The electron beam source 8 emits an electron beam 19 onto a deposited film formed by deposition of evaporated particles on a substrate 101 (monitor substrate 101). The detector 40 detects the condition of the surface of the deposited film. The controller 31 stops emission of the electron beam 19 by the electron beam source 8 according to a detection result from the detector 40.SELECTED DRAWING: Figure 5

The present invention discloses a method for predicting the crack structure of ceramic layer deposition and reverse designing preparation parameters, including: 1. Establishing a heat conduction beam contact model; 2. Establishing a discrete element model of the thermal barrier coating according to the thermal barrier coating specimen to be studied; 3. Calibrating the microscopic parameters of the heat conduction beam contact model in the discrete element model of the thermal barrier coating through the macroscopic parameters of the thermal barrier coating specimen; 4. Conducting discrete element simulations layer by layer on the ceramic layer in the discrete element model of the thermal barrier coating; 5. Analyzing the crack structure diagram to obtain the crack pattern; 6. Establishing a correlation database between preparation parameters and crack patterns; 7. Reverse designing the preparation parameters according to the established correlation database between preparation parameters and crack patterns. The discrete element model of the thermal barrier coating in the present invention is based on the heat conduction beam contact model for layer-by-layer discrete element simulation to predict the crack structure during the layer-by-layer thermal deposition process of the ceramic layer, and it is convenient to screen from the correlation database according to the actual preparation requirements to reverse design the preparation parameters.

A method of depositing a silicon nitride film is presented. The method comprises heating a substrate having a first surface region of a first composition and a second surface region of a second composition. The substrate is exposed to an inhibitor that selectively bonds to the first surface region of the first composition. The substrate is exposed to a silicon-containing precursor and to a nitrogen-containing precursor to thermally deposit the silicon nitride film on the second surface region. The inhibitor inhibits deposition of the silicon nitride film on the first surface region.

To provide compositions and methods that solve problems with the prior art by providing a composition or formulation for depositing a silicon-containing film formed without any halogenated precursor (i.e., chlorosilane) or strong oxidizer, such as oxygen plasma or ozone.SOLUTION: A composition used for depositing a silicon oxide film or a carbon-doped silicon oxide film using a deposition process contains at least one silicon precursor having a structure represented by Formula I described herein.SELECTED DRAWING: None

The invention discloses a gain optical fiber, which belongs to the technical field of optical fiber lasers and comprises a fiber core, a first inner cladding, a second inner cladding, a quartz layer and a coating layer of which the outer diameters are sequentially increased from inside to outside. The fiber core is doped with rare earth ions serving as gain ions; the first inner wrapping layer wraps the circumference of the fiber core, the outer diameter of the first inner wrapping layer is arranged along the axial direction of the fiber core in a single trend reducing mode, and the first inner wrapping layer is made of fused quartz materials; the second inner wrapping layer wraps the first inner wrapping layer in the circumferential direction, and the second inner wrapping layer is made of fluorine-containing silicon-based quartz; the quartz layer is arranged in the circumferential direction of the second inner cladding layer; and the coating layer coats the periphery of the quartz layer. The optical fiber structure has the advantages of being low in quantum loss, weak in thermal deposition effect, uniform in axial temperature distribution, high in mode unstable threshold value and the like, and under the same parameter condition, the optical fiber structure can achieve the laser output performance with higher output power and better light beam quality.

The invention discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition) preparation process of an optical film and the optical film prepared by the PECVD preparation process, and relates to the field of optical film preparation. The PECVD preparation process of the optical thin film comprises the steps of preheating a substrate, depositing a SiOx layer, depositing a SiNx layer, depositing a SiOxNy layer, depositing a SiOxFy layer, repeatedly depositing the SiOxNy layer and the SiOxFy layer for 3-8 times, and repeatedly depositing the SiOx layer and the SiNx layer for one time. According to the optical thin film, through the matching of the film layers which are arranged in a specific sequence and have a specific thickness and the coating parameters of the film layers, the reflectivity of the optical thin film can be reduced, the transmittance of the optical thin film in the wavelength ranges of 450-530 nm, 600-700 nm and 1000-1200 nm can be increased, the internal stress between the film layers can be effectively reduced, the overall binding strength and stability of the optical thin film can be improved, and the optical thin film can be widely applied to the field of optical thin films. And the optical film with both optical performance and stability can be obtained.

Provided are methods for low temperature thermal deposition of silicon-containing films. The methods provide selective deposition on a variety of substrates with high deposition rates and short cycle times.

The invention discloses a titanium-based lead dioxide electrode with a micro-nano structure and a preparation method of the titanium-based lead dioxide electrode. The method comprises the following steps: firstly, carrying out fine processing on a smooth titanium plate by adopting nanosecond laser to construct a surface microarray structure, then, forming a compact tin-antimony oxide intermediate layer on the processed titanium plate by adopting a thermal deposition method, and finally, carrying out deposition of lead dioxide on a titanium substrate by adopting an electro-deposition method. The prepared electrode has a relatively large specific surface area, can provide more active sites, and has good electro-catalytic performance, stability and relatively long service life. According to the preparation method, laser etching and electro-deposition are combined, and the preparation method has the advantages of being easy and convenient to operate, green, safe, low in energy consumption, low in cost and the like and has certain industrial application prospects.

The application discloses a preparation method of a flexible wearable electrochemical sensor for sweat cortisol detection. The method comprises the following steps: firstly, a carbon nanotube / polyurethane (CNT / PU) film with conductivity is prepared by using an improved wet spinning method; then, a carbon nanotube-based composite film electrode is prepared by hot depositing a carbon nanotube / polyvinyl alcohol (CNT / PVA) solution on the CNT / PU film; subsequently, streptavidin functionalized Ni-Co MOF nanomaterial is modified on the surface of the electrode; finally, the flexible stretchable film electrode for cortisol detection is prepared by incubating and combining with biotinylated cortisol aptamer. After that, the film electrode is combined with a sweat collecting cloth, fixed on a film with a polydimethylsiloxane (PDMS) flexible substrate, and covered with a square frame type PDMS waterproof bandage as a sweat collecting channel, so as to prepare a wearable electrochemical sensor for real-time monitoring of cortisol in human sweat.

Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.

Methods for depositing boron doped silicon germanium layers and associated compositions are disclosed. The methods include depositing the boron doped silicon germanium layers by a thermal deposition process employing a composition including a iodosilane precursor. The methods also include depositing the boron doped silicon germanium layers by selective deposition processes.

The present invention relates to the field of battery manufacturing technology, and specifically provides a battery cell processing device, including: a preheating component, including a preheating cavity, a boat is introduced into the preheating cavity, and the battery cells in the boat are preheated; a deposition component, which is arranged at the discharge end of the preheating component, and the deposition component includes a deposition cavity and a precursor supply mechanism. In the present invention, the precursor supply mechanism in the deposition cavity supplies the precursor and forms a directional precursor supply area. By changing the precursor supply area, the battery cell is allowed to perform thin film deposition under different states, thereby quickly forming a high-quality passivation layer, and a plurality of cooling positions on the cooling component are quickly adjusted to the discharge end of the annealing component in sequence to receive multiple boats and cool the battery cells in the multiple boats, thereby improving production efficiency.

The invention relates to the technical field of battery manufacturing, and particularly provides a battery piece processing device, which comprises a preheating part, which comprises a preheating cavity, a boat body is guided into the preheating cavity, and a battery piece in the boat body is preheated; and the deposition part is arranged at the discharging end of the preheating part, and the deposition part comprises a deposition cavity and a precursor supply mechanism. According to the invention, the precursor is supplied by the precursor supply mechanism in the deposition cavity, the oriented precursor supply area is formed, and the thin film deposition of the battery piece in different states is carried out by changing the precursor supply area, so that the high-quality passivation layer is rapidly formed; and a plurality of cooling positions on the cooling part are quickly and sequentially adjusted to the discharging end of the annealing part to be used for bearing the plurality of boat bodies and cooling the battery pieces in the plurality of boat bodies, so that the production efficiency is improved.

The invention relates to an efficient photocatalytic water splitting hydrogen production material based on a plasmon enhancement mechanism and a preparation method of the efficient photocatalytic water splitting hydrogen production material. The material is characterized in that a porous TiO2 nanotube array is used as a matrix, the tube diameter is 50-200 nm, and the wall thickness is 10-50 nm; au-Ag bimetallic nano-particles with the particle size of 5-20 nm are loaded on the surface, the molar ratio of Au to Ag is 1: 3-3: 1, and the Au-Ag bimetallic nano-particles are used for exciting the surface plasmon resonance effect; further depositing a two-dimensional MoS2 nanosheet as a co-catalyst on the outer surface, wherein the thickness of the two-dimensional MoS2 nanosheet is 1-5nm; and an ultrathin carbon layer with the thickness of 1-3nm is deposited on the whole surface so as to improve light absorption and stability. The invention further provides a preparation method of the photocatalytic material. The preparation method sequentially comprises the steps of TiO2 anodic oxidation, MoS2 hydrothermal deposition, metal nanoparticle photodeposition, CVD carbon layer coating and the like. The prepared material shows excellent hydrogen yield and stability under the driving of sunlight, and has a wide application prospect of photocatalytic hydrogen production.

The application discloses a low-temperature synthesis method of a long-acting self-sterilizing coating and belongs to the technical field of inorganic nano-coating low-temperature curing manufacturing. + -(Ti(O2)) 2‑ Preparation of a complex precursor solution; (2) spraying of the Ag + -(Ti(O2)) 2‑ complex precursor solution; (3) baking, curing and obtaining of a high-temperature-intolerant treatment substrate with a low-temperature deposited nano-silver-titanium dioxide coating by using the cured Ag + -(Ti(O2)) 2‑ complex precursor solution coating prepared in the above steps. The application breaks through the limitation that the traditional high-temperature thermal deposition titanium dioxide nano-coating technology cannot be applied to high-temperature-intolerant substrate materials, realizes low-temperature deposition of a nano-silver-titanium dioxide coating capable of absorbing visible light on the surface of a high-temperature-intolerant substrate material, and the low-temperature deposited nano-silver-titanium dioxide coating has a long-acting antibacterial self-sterilizing function on the surface of the substrate material.