The invention discloses a manufacturing method of a composite vapor chamber with a base plate made of
molybdenum-
copper or
tungsten-
copper alloy and other
heat sink materials. The vapor chamber is of a
composite structure of
heat sink materials and
oxygen-free
copper. A wick of the vapor chamber is of a copper
powder sintered or foamy copper structure. The method comprises the steps that high-temperature
reduction treatment is carried out on molded copper
powder or foamy copper, the treated copper
powder or foamy copper is sintered to a pure-copper upper cover plate and the thin
molybdenum-copper or
tungsten-
copper alloy base plate, a thin copper column or a foamy copper column is used as a supporting column, the
oxygen-free copper cover plate and the
molybdenum-copper or
tungsten-
copper alloy base plate are welded through copper-silver
alloy, and the needed vapor chamber is manufactured. The vapor chamber is of the
composite structure of the
oxygen-free copper plate and the base plate made of the high-
conductivity low-expansion
heat sink materials like molybdenum-copper or tungsten-
copper alloy, wherein the molybdenum-copper or tungsten-copper
alloy face can directly make tight contact with chips of high-power electric and electronic devices such as a
thyristor, an IGBT and an IGCT. It is ensured that the heat expansion coefficients of the chips are matched with those of the heat sink materials in the heated process, the heat sink materials and the vapor chamber are integrated, the
heat resistance is greatly reduced, and the requirement for rapid temperature equilibrium and efficient heat dissipation is met.