160 results about "Kovar" patented technology

The invention discloses a solar cell with alloy as a flexible substrate and a preparation method thereof, a kovar alloy sheet is used as the flexible substrate to be bonded with an epitaxial layer, the coefficient of thermal expansion of the kovar alloy sheet is similar to that of an epitaxial material, and dark cracks of the epitaxial layer caused by cold and hot temperature difference are avoided; moreover, the metal bonding layer adopts a thick-silver thin-gold structure taking silver as a substrate, so that the production cost is greatly reduced, and the weldability of the back electrode is enhanced; and the back electrode also adopts a thick silver and thin gold structure taking silver as a substrate, so that the front warping of the Kovar alloy sheet can be balanced, the weldability of the back electrode is enhanced, the drawing force of the back electrode is improved, the thin gold plated on the thick silver can also prevent silver oxidation and resist the impact of atomic oxygen, and the service life of the solar cell is prolonged.

The invention discloses a pickling-free cold heading Kovar alloy wire production process which comprises the following steps: S1, raw material preparation: preparing the following raw materials in percentage by mass: 41.5% of Ni, 0.5% of Co, less than or equal to 0.03% of C, less than or equal to 0.05% of Mn, less than or equal to 0.05% of Si, less than or equal to 0.02% of P, less than or equal to 0.02% of S and the balance of Fe; mixing the materials, and carrying out vacuum induction melting and electroslag remelting to prepare an alloy ingot; the alloy cast ingot is subjected to hot rolling treatment to form a hot-rolled wire rod with the diameter being 12.0-16.0 mm; s2, peeling treatment is conducted, specifically, surface layer defects of the hot-rolled wire rod in the step S1 are removed through a peeling machine; s3, dry-type drawing treatment is conducted, specifically, the hot-rolled wire rod treated in the step S2 is subjected to dry-type drawing through a dry-type drawing die to form an alloy wire; s4, intermediate annealing treatment is conducted, specifically, the alloy wire in the step S3 is placed in an annealing furnace, sufficient hydrogen is input into the annealing furnace, intermediate annealing is conducted under the hydrogen protection atmosphere, the annealing temperature is 950-1100 DEG C, and the annealing walking speed is 3-5 m / min; the surface quality and the size consistency of the wire can be improved, meanwhile, the defects of environmental pollution, hydrogen embrittlement and the like are reduced, and the use requirements of high-end precise cold heading parts are met.

The invention provides a Kovar alloy nano-indentation and nano-friction simulation method based on molecular dynamics. The technical key points are as follows: carrying out initial setting on a simulation system and establishing a model; defining a potential function; performing model initialization, including energy minimization, temperature initialization and system relaxation; performing nanoindentation simulation and extracting data; performing nanometer friction simulation and extracting data; and processing and analyzing simulated data, namely outputting a depth-load curve, calculating hardness, fitting and calculating an elastic modulus, calculating a friction force and a friction coefficient, and analyzing wear morphology and dislocation evolution in the alloy through a simulation process file. By analyzing the mechanical properties and the frictional wear properties of the Kovar alloy at different environment temperatures, stable and reliable simulation data is obtained, the actual experiment cost is greatly reduced, and technical guidance is provided for application of the Kovar alloy in the field of vacuum sealing elements.

The utility model relates to the technical field of low-voltage switches, and particularly discloses a direct-current contactor shell and a direct-current contactor, the direct-current contactor shell comprises a transparent glass shell, the transparent glass shell is provided with an internal cavity capable of accommodating a moving contact system, the transparent glass shell is provided with a mounting hole, and the transparent glass shell is provided with a binding post arranged in the mounting hole in a penetrating manner; kovar sealing sleeves for sealing are arranged between the mounting holes and the binding posts; the kovar sealing sleeve is sleeved on the outer side wall of the binding post, and the inner side surface of the kovar sealing sleeve is attached to the outer side wall of the binding post; the outer side face of the Kovar sealing sleeve is attached to the inner wall of the mounting hole. The high-temperature-resistant and high-pressure-resistant cable is convenient to produce and has good gas tightness and excellent high-temperature-resistant performance, meanwhile, hydrogen can be used as protective gas, and the arc blocking performance can be improved conveniently.

The invention discloses a Kovar alloy electroplating method. The method comprises the steps that a Kovar alloy base material is pretreated; the pretreated kovar alloy base material is immersed in an acidic copper sulfate plating solution for electrolytic copper plating, so that a copper plating layer is formed on the surface of the kovar alloy base material; immersing the kovar alloy on which the copper plating layer is formed into a chemical nickel plating solution so as to form a nickel plating layer on the surface of the copper plating layer; and immersing the kovar alloy base material on which the nickel plating layer is formed into a nanogold seed crystal solution so as to form a soft gold plating layer on the surface of the nickel plating layer. The coating quality of the kovar alloy can be improved.

The invention relates to the technical field of material sealing, in particular to a high-performance insulating ceramic sealing method for a neutron tube, which comprises the following steps: sequentially carrying out organic solvent ultrasonic cleaning and argon plasma etching activation treatment on a sealing surface of a cylindrical high-purity aluminum oxide ceramic piece, and depositing a titanium transition layer through magnetron sputtering, the ceramic piece with the titanium transition layer is obtained; the sealing face of the kovar alloy cylindrical flange plate is subjected to acid pickling, an oxide layer is removed, cleaning and drying are conducted, and a metal sealing part is obtained; preparing an active brazing filler metal sheet; the components are assembled in sequence to form a pre-assembled component; the pre-assembled component is placed in a vacuum brazing furnace, axial pre-tightening force is applied to the pre-assembled component, sealing is completed, then cooling is controlled, and a sealing piece with an airtight brazing joint is formed; and carrying out annealing treatment to obtain a finished product sealing assembly. Therefore, the problems of low dielectric strength, large thermal expansion coefficient difference, difficulty in interface quality control and the like in the prior art are solved.

The invention provides a GIS visible window preparation method, device and equipment and a storage medium, and the method comprises the following steps: firstly carrying out surface metallization treatment on sapphire transparent ceramic by using Ag-Cu-Ti soldering paste under vacuum, raising the temperature to a first high temperature, carrying out heat preservation, and then carrying out furnace cooling; then the kovar alloy and the sapphire are welded with the same soldering paste under the same conditions; and then the Al-Si-Mg brazing filler metal is used for welding the aluminum alloy and the kovar alloy under vacuum, the temperature is increased to a second low temperature lower than the first high temperature, heat preservation is conducted, and then furnace cooling is conducted. The SF6 leakage resistant sealing interface is formed through the steps. According to the method, the visual window is integrally prepared, the interior of the GIS can be directly observed, fault judgment accuracy and operation and maintenance efficiency are improved, power failure time is shortened, and stable operation of equipment is guaranteed.

The utility model discloses an accurate guide device for hot continuous rolling of a kovar alloy plate. The accurate guide device comprises a rack, a conveying roller, a guide mechanism, a fixing mechanism and a cleaning mechanism, the rack is fixed on the ground; the conveying rollers are evenly and rotationally connected to the machine frame through bearings, and the guiding mechanisms are symmetrically installed on the two sides of the kovar alloy plate. The fixing mechanism and the cleaning mechanism are both mounted on the guide mechanism; the guide mechanism comprises a support frame, a connecting plate, a rotating roller, a bidirectional threaded rod, a guide rod and a motor II; the two-way threaded rod is rotationally connected to the rack through a bearing, and the guide rods are fixed to the portions, on the two sides of the two-way threaded rod, of the side wall of the rack. The motor is fixed to the outer side wall of the rack, and the output end is connected with one end of the bidirectional threaded rod. According to the utility model, the Kovar alloy plate can be accurately guided; in the Kovar alloy plate guiding process, the side wall makes contact with the rotating roller, friction can be reduced, and damage to the Kovar alloy plate is further reduced.

The invention discloses a Kovar process of a 3DDPC metal tube shell. The Kovar process is characterized by comprising the following steps: completing circuit metal copper processing of a bottom plate; electroplating processing is carried out on the metal copper of the bottom plate, and thickening processing is carried out on a metal area used for signal transmission wiring; after the bottom plate and the thickened area are electroplated, the bottom plate is subjected to film removal and bottom layer etching treatment; an enclosure frame is manufactured, and an inner cavity of the enclosure frame is removed in a laser cutting mode; electroplating the enclosure frame, wherein the total plate thickness of the enclosure frame is equal to or slightly higher than the thickened height of the bottom plate; and cutting the electroplated enclosure frame into single pieces, fixing the single pieces on a bottom plate in an aligned manner by using gold-tin solder, and putting the single pieces into a reflow soldering furnace to complete welding to obtain the metal tube shell. The method has the beneficial effects that Kovar process development of the metal tube shell is achieved, 300 DEG C high-temperature welding is carried out under the Kovar process condition, the stress between the bottom plate and the enclosure frame is low, and the problem that the reliability of the metal tube shell is poor is solved.

The invention relates to a metal mask supported by a glass substrate for manufacturing an organic light emitting diode display. The mask includes a glass substrate located only outside the display area, an open-cell metal layer for providing structural stability, and forming apertures for material deposition in the display area. The perforated metal layer can be formed by methods such as electroforming, sputtering, chemical vapor deposition, evaporation or atomic layer deposition, and the used metal comprises a material with a low thermal expansion coefficient, such as invar steel, super invar steel, kovar alloy, 42 alloy, nickel, tungsten, molybdenum, tantalum or rhenium. The mask supports two structural forms: a fine metal mask and an open metal mask which are respectively used for evaporation of red, green and blue sub-pixels and a common layer. The method can be used for batch processing of a plurality of micro organic light-emitting diode display substrates, and can also be used for full-coverage processing of a single active matrix organic light-emitting diode display substrate.

The invention provides an MEMS microstrip surface-mounted circulator and a preparation method thereof, and belongs to the technical field of microwave devices, the MEMS microstrip surface-mounted circulator comprises a circulator chip and a magnetic shielding shell, first magnetic steel is arranged on the circulator chip, and a kovar carrier is arranged on the bottom surface of the circulator chip; the magnetic shielding shell is arranged above the circulator chip in a covering manner; second magnetic steel opposite to the first magnetic steel in polarity is arranged in the magnetic shielding shell, and the second magnetic steel and the first magnetic steel are arranged at intervals. Compared with the conventional micro-strip surface-mounted circulator, the MEMS micro-strip surface-mounted circulator disclosed by the invention has the advantages of higher consistency, lower loss and higher power capacity; by adding the positioning columns, the mounting precision of the microstrip surface-mounted circulator is improved, and batch production of the circulator is facilitated; by adding the magnetic shielding shell, the interaction between the circulator and the circulator in the actual mounting process is greatly reduced, and the problem that accurate alignment cannot be achieved due to the interaction between the circulators in the mounting process is solved.

The invention relates to the technical field of electronic packaging, in particular to a Kovar base material optical modulator packaging shell and a preparation method thereof. The light modulator packaging shell comprises a base, a high-frequency assembly mounting hole is formed in the base, a high-frequency assembly is inserted in the high-frequency assembly mounting hole, the base is made of kovar alloy, a transition ring with a high expansion coefficient is arranged between the base and the high-frequency assembly, the transition ring is made of stainless steel, and the high thermal expansion coefficient is (10-20) * 10 <-6 > / DEG C. According to the invention, the transition ring with the high expansion coefficient is arranged between the high-frequency assembly and the kovar material base with the low expansion coefficient, and the transition ring with the high expansion coefficient is used for applying an inward pressurization effect on the high-frequency assembly, so that the binding force between the assembly ring of the high-frequency assembly and the glass insulator is indirectly enhanced; therefore, the sealing reliability is improved, and the air leakage problem is solved.

The invention provides a fully-sealed battery and a preparation method thereof, the fully-sealed battery comprises a battery cell, a battery shell and a kovar alloy cover body, the battery shell and the kovar alloy cover body are connected to form a sealed cavity, the battery cell is packaged in the sealed cavity, and the kovar alloy cover body is connected with a battery cell tab. The invention provides a preparation method of a fully-sealed battery. A kovar alloy cover body is connected with a battery cell tab through a transition solder in a welding manner; the preparation material of the battery shell comprises stainless steel; and the battery shell is connected with the kovar alloy cover body in a laser welding manner. The method has the beneficial effects that the leakage rate of the lithium carbon fluoride battery can be reduced, the process is simple, and the manufacturing cost and the battery performance can be ensured.

The invention provides a vacuum ion sputter coating device for an X-ray ceramic tube. The vacuum ion sputter coating device comprises a ceramic tube, and a cathode assembly and an anode assembly are installed at the upper end and the lower end of the ceramic tube respectively; the cathode assembly comprises a core column assembly, a cathode seat, a getter, a lamp filament and a focusing head, the cathode seat is hermetically welded at an upper end tube opening of the ceramic tube, the focusing head is hermetically welded in the cathode seat, the lower end of the focusing head extends into the upper end tube opening, and the core column assembly is hermetically inserted in the focusing head; the lamp filament is installed at the lower end of the core column assembly and located in the extending section of the focusing head. The core column assembly comprises a core column kovar sleeve, a core column ceramic chip, a pair of core columns and an exhaust pipe, and the core column kovar sleeve is welded in the focusing head in a sealed mode. The ceramic tube solves the problem that in the prior art, small size and large voltage cannot be achieved, the structural layout and material selection are reasonable, the size of the X-ray tube is shortened under the condition that high voltage is kept, and the ceramic tube is good in insulation and heat dissipation performance and easy to produce.

The invention relates to a double-face heat dissipation, large-current and high-surge Schottky diode and a packaging structure, and belongs to the technical field of power semiconductor device packaging, the double-face heat dissipation, large-current and high-surge Schottky diode comprises a TK3 metal ceramic tube seat and an upper electrode, the TK3 metal ceramic tube seat comprises sealing rings, a lower electrode and a ceramic frame, the upper electrode extends to the sealing rings, and the lower electrode is arranged between the sealing rings; the ceramic frame is wound on the outer side of the sealing ring, and a chip sintering area is arranged between the upper electrode and the lower electrode. The TK3 metal ceramic shell used in the invention is formed by combining molybdenum, Al2O3 ceramic, 4J42 Kovar alloy and other materials with similar linear expansion coefficients, and a step-by-step assembly and synchronous welding process is adopted; according to the double-sided heat dissipation, large-current and high-surge Schottky diode, the gold-tin solder is adopted as a welding material, stress generated in the high-temperature sintering process of different materials is reduced, secondary melting possibly occurring in the packaging and using process is effectively prevented, and the reliability of the product assembling process is improved.

A connecting structure between lead-out pins of auxiliary stationary contacts and a yoke plate of a DC relay, includes a yoke plate and a plurality of auxiliary stationary contact lead-out terminal assemblies mounted on the yoke plate; each auxiliary stationary contact lead-out terminal assembly includes a lead-out pins, a glass material body and a kovar alloy part; the lead-out terminal, the glass material body and the kovar alloy part are connected into a whole by sintering, and the lead-out terminal and the kovar alloy part are insulated from each other by glass material; the auxiliary stationary contact lead-out terminal assembly is welded and fixed to the yoke plate through the kovar alloy part.

The utility model relates to the technical field of microelectronic packaging tube shell application, in particular to a sectional type positioning, assembling and welding jig suitable for a split type Kovar enclosure frame, which comprises a pressing plate, an upper positioning plate, a lower positioning plate and a bottom plate, and provides a jig adopting sectional type positioning, a product is divided into two parts to be positioned, and meanwhile, the product can be separated from the bottom plate. One-time stacking, assembling and positioning are also formed, the consistency of products can be guaranteed, and the yield of the products is improved; the two parts of the product are respectively positioned, so that the skew of the product caused by overlapping, assembling and touching in the assembling process is reduced, and the assembling efficiency is improved; the pressing plate, the upper positioning plate, the lower positioning plate, the bottom plate, the first protruding block and the second protruding block are all made of graphite which is even in heat conduction, it can be guaranteed that products are evenly heated in the brazing process, glass ceramics can be prevented from being adhered to a jig in the brazing process, and demolding is easy after the products are brazed; the production cost is effectively reduced, the equipment precision requirement is reduced, the production period is shortened, and the production process is simpler, more convenient and more efficient.

The invention discloses a large-size electronic packaging shell and a manufacturing method thereof, and belongs to the technical field of electronic packaging. The packaging shell comprises a metal shell body and a metal cover body, wherein the metal shell body is made of 4J29 kovar alloy or carbon structural steel with the carbon content ranging from 0.08% to 1.3%; the sealing insulator is embedded in the bottom of the metal shell and comprises a hollow cylindrical ceramic body, and a tungsten composite metal layer and a metal coating are sequentially formed on the inner surface and the outer surface of the ceramic body from inside to outside; the ceramic body is made of aluminum nitride or silicon nitride; and the leading pin is inserted into the ceramic insulator, and the material of the leading pin is beryllium bronze. According to the packaging shell, the problems of stress deformation of the leading-out end and damage to the sealing area caused by thermal mismatch are avoided, so that the device failure caused by the stress deformation is avoided, and the sealing performance and long-term reliability of the device are ensured.

The invention discloses a miniaturized MEMS circulator with a TSV capacitor. The miniaturized MEMS circulator comprises a kovar metal layer, a first metal layer, a first silicon adapter plate layer and ferrite, first metal columns are distributed on the bottom surface of the first silicon adapter plate layer; second metal columns are distributed on the top surface of the first silicon adapter plate layer; a second metal layer; bonding the interconnection layer; a third metal layer; a second silicon adapter plate layer; an insulating spacer and a permanent magnet. According to the invention, the size is reduced and the bandwidth is improved by forming a capacitor through staggered and parallel TSVs. Besides, matching at ports is carried out through a capacitance-inductance-capacitance matching network, and an inductor in the matching network is a serpentine inductor, so that the size required by the matching network is further reduced, and miniaturization and integration of the MEMS circulator are facilitated.

The utility model relates to the technical field of metal packaging shells, and discloses a ceramic sealing structure of a high-current-carrying square cross-section pin, which comprises a metal packaging shell and a square cross-section pin, a metalized frame is arranged on the side surface of the metal packaging shell, pin packaging openings are equidistantly arranged on the metalized frame, and the square cross-section pin is arranged on the metalized frame. And a ceramic insulator is packaged on the square cross section pin. According to the utility model, the ceramic insulator is packaged and installed on the square cross section pin, the ceramic insulator and the square cross section pin are sealed and connected together through the sealing installation inner ring, the anti-oxidation packaging outer ring and the sealing installation inner ring are made of kovar soldering lug materials, the bearing strength is high, and the ceramic insulator has an insulation characteristic, so that the requirements of insulation resistance and dielectric voltage resistance are met; the whole shell is made of metal materials, the packaging strength is good, durability is excellent, the device is provided with the metal packaging shell and the ceramic pin packaging structure, the packaging strength is high, the requirements of insulation resistance and dielectric voltage resistance are met, and assembling and positioning are convenient.

The invention discloses a heat conduction substrate with low interface stress and a preparation method thereof, and the method comprises the steps: providing a ceramic substrate which comprises a silicon nitride substrate, an aluminum nitride substrate, a diamond substrate or a silicon carbide substrate, and is provided with a first surface and a second surface which are oppositely arranged; providing at least one copper composite board; performing a copper coating process to arrange the at least one copper composite plate on at least one surface of the ceramic substrate so as to form a ceramic copper-clad plate to realize heat conduction; the copper composite plate comprises a metal plate made of invar alloy or kovar alloy, a transition metal layer formed on the metal plate and a copper layer formed on the transition metal layer, a plurality of up-down through micropores are formed in the metal plate, and the micropores are filled with copper materials. By adopting the heat-conducting substrate, the interface stress of the ceramic substrate and the copper-clad layer in the heat-conducting substrate at high and low temperatures can be reduced, the stability of the heat-conducting substrate is improved, and the service life of the heat-conducting substrate is prolonged.

The invention discloses a brazing method for a sapphire-ceramic vacuum arc-extinguishing chamber window and application of the brazing method. The brazing method comprises the steps that an activation layer, a barrier layer and a brazing layer are sequentially deposited on a sapphire brazing face, and a molybdenum-manganese method is used for sintering and chemical nickel plating is carried out on an annular trepanning area of a ceramic shell; the oxygen-free copper metal foil, the kovar alloy metal foil and the nickel metal foil are compounded into a whole, the oxygen-free copper side of the obtained annular composite transition ring is aligned with the sapphire brazing layer, the copper brazing filler metal ring is placed in the middle of the annular composite transition ring, the nickel side of the composite transition ring is aligned with the nickel-plated layer at the opening of the ceramic shell, the copper brazing filler metal ring is placed in the middle of the annular composite transition ring, and the obtained assembly is subjected to vacuum brazing. Two high-strength and high-airtightness brazed joints are formed at a time, and therefore the sapphire window is connected to the ceramic shell in a sealed mode through the composite transition ring. By introducing a multi-layer composite transition layer structure, the thermal stress matching problem is effectively solved, so that a sealing interface with ultrahigh air tightness, high mechanical strength and excellent long-term reliability is realized.

The invention discloses a hybrid photomultiplier coaxial output structure based on a microstrip line. The hybrid photomultiplier coaxial output structure comprises a semiconductor detector, a bonding wire, the microstrip line, a ground electrode, a lead pin, a medium, an outer conductor base and a detector lead pin. The semiconductor detector is used for receiving the photoelectrons converted by the photoelectric cathode and generating a current signal; the bonding wire is used for electrically connecting the semiconductor detector and the microstrip structure; the microstrip line and the ground electrode adopt gold-plated kovar alloy parts to form an in-tube microstrip structure; the guide pin and the detector guide pin are kovar alloy guide pins and form an inner conductor with a coaxial structure; the outer conductor base is a kovar alloy disc and forms an outer conductor with a coaxial structure; the medium is glass or ceramic. According to the coaxial output structure, a vacuum tube is of a 50-ohm microstrip structure, the exterior of the vacuum tube is of a 50-ohm SMA coaxial structure, and a complete 50-ohm coaxial line is formed by connecting a microstrip line and a guide pin together. The structure provided by the invention has the advantages of high transmission speed, small signal reflection and oscillation and the like, and is more beneficial to detection of ultrafast optical pulse signals.

The present invention discloses a method for testing the second type of residual stress of 4J33 Kovar alloy, which relates to the field of analytical instruments and material testing technology. The method comprises the following steps: loading an annealed stress-free specimen and a specimen pre-stressed with equibiaxial known stress into a nanoindenter; performing a nanoindentation experiment on the grains entering a marked circle with the test point as the center and twice the average grain size as the radius, obtaining all indentation data pressed into each grain in the marked circle; averaging all indentation data pressed into each grain in the marked circle to obtain an average value of indentation data corresponding to each grain in the marked circle; summing and averaging the average values ​​of indentation data corresponding to all grains in the marked circle to obtain an average value of indentation data corresponding to all grains in the marked circle, and substituting the average value into a residual stress calculation model to obtain the second type of residual stress. The present invention can effectively reduce the influence of grain orientation differences on the accuracy of residual stress testing using the nanoindentation method.

The invention discloses a 4J29 kovar alloy / 304 stainless steel composite plate and a preparation method thereof, and belongs to the technical field of metal composite plate production, a 4J29 kovar alloy plate and a 304 stainless steel plate in a cold rolling state are respectively subjected to recrystallization annealing treatment to obtain a soft 4J29 kovar alloy plate and a soft 304 stainless steel plate, then the soft 304 stainless steel plate is used as a base plate, and the 4J29 kovar alloy plate and the soft 304 stainless steel plate are subjected to heat treatment to obtain the 4J29 kovar alloy / 304 stainless steel composite plate. A soft 4J29 kovar alloy plate serves as a compound plate, the surface of the soft 4J29 kovar alloy plate is coated with a layer of water glass to serve as a protective layer, then an explosive layer is laid on the surface of the protective layer in a gradient explosive distribution mode, then explosive cladding is conducted, the composite plate is obtained, a bonding area of the composite plate has the uniform and continuous microwave shape characteristic, the interface bonding rate is larger than or equal to 98.9%, and the bonding strength is larger than 360 MPa. The explosive welding composite board with excellent performance is prepared, and corresponding technical conditions meet industrial production requirements.

The invention provides a small-size laser light source module which comprises a tube shell and two laser chips, the tube shell is composed of a heat conduction base, a kovar transition ring and a ceramic frame and used for leading out heat of the laser chips and leading out electrodes of the laser chips; wherein the ceramic frame is arranged on the outer side of the heat conduction base in a sleeving mode, the kovar transition ring is welded between the heat conduction base and the ceramic frame, the heat conduction base comprises a flat plate playing a sealing role and an inclined face for supporting a chip, and the inclined face is in an isosceles trapezoid shape; according to the laser light source module, the heat conduction path of the laser chip and the heat transfer path of the wavelength conversion sheet are separately arranged and do not influence each other, so that the service life of the laser light source module is longer. The short excitation optical path is adopted, the brightness of white light output by the laser light source module is higher, and the overall size is smaller. According to the laser light source module, no optical auxiliary element is adopted, so that the assembly efficiency is high, and the yield is high.

The application relates to the technical field of metal plate composite technology and discloses a preparation process of a Kovar alloy-copper composite plate, which comprises the following steps: a preparation process of an Invar alloy-copper composite plate, which comprises the following steps: s1, taking one Invar alloy plate and two copper plates; s2, immersing the Invar alloy plate into liquid copper after the Invar alloy plate is heated to 250-300 DEG C; s3, positioning the two copper plates and the Invar alloy plate to form a group of initial composite plate materials; s4, heating the whole in a heating furnace, the heating temperature is 700-850 DEG C, and the heating time is 20-40 min; s5, taking out and cooling to 500-650 DEG C, and then performing hot rolling; s6, performing stress relieving annealing on the composite blank; s7, naturally cooling to normal temperature after annealing, and cold rolling to form an Invar alloy-copper composite plate with a preset thickness. The Invar alloy-copper composite plate prepared through the process is more stable and not easy to separate between the plates, the composite plate has the physical properties of the Kovar alloy and good thermal conductivity.

The present invention belongs to the technical field of the preparation of Kovar alloy foils, aiming to solve the problems in the prior art that it is difficult to control the content of trace elements in the preparation process of Kovar alloy foils and it is difficult to further reduce the harmful trace elements. For this purpose, the present invention provides a method for preparing Kovar alloy foils, which includes: placing Kovar alloy raw materials in a melting furnace for melting, pouring the melted metal liquid into a target mold to form an ingot; heating the ingot and forging it into a billet; cooling the forged billet and then cleaning its surface; performing dehydrogenation treatment on the billet after surface cleaning; and subjecting the alloy after dehydrogenation treatment to one-time hot rolling treatment and multiple cold rolling treatments to obtain Kovar alloy foils with a target thickness. The present invention enables precise control of the content of trace elements during the preparation of Kovar alloy foils, reduces the content of harmful trace elements such as sulfur, avoids the problem of hydrogen embrittlement in Kovar alloy, and improves the ductility and toughness of Kovar alloy.

The utility model discloses an outer beryllium window device bulb tube which comprises a glass bulb, an anode assembly and a cathode assembly are installed in the glass bulb, a side hole is formed in the position, corresponding to the perpendicular bisector of a beam outlet window, of the glass bulb, a Kovar ring is installed on the inner side of the side hole, a beryllium piece installation frame is fixedly connected to the inner side of the Kovar ring, and a beryllium piece is installed on the beryllium piece installation frame. A light-transmitting beryllium sheet is mounted on the beryllium sheet mounting rack; the connecting mechanism comprises a connecting flange arranged on the glass bulb, the left side of the connecting flange is fixedly connected with the kovar ring and the beryllium sheet mounting frame, a plurality of flange mounting holes are formed in the right side of the connecting flange, the interior of the glass bulb is in a vacuum shape, and the diameter of the middle of the glass bulb is larger than that of the two ends of the glass bulb. A radiator is installed at the lower end of the glass bulb and used for dissipating heat of the anode assembly. Compared with the prior art, the bulb tube has the advantages that the glass bulb can be directly mounted on the light source shell, so that the X-ray intensity can effectively improve the imaging definition of equipment.

The embodiment of the invention discloses a crystal oscillator mixed seal welding method based on partition stripping. The method comprises the steps that a base and a kovar alloy cover plate with a nickel-plated gold layer are prepared; performing laser cleaning on the lower surface of the kovar alloy cover plate corresponding to the short straight edge sealing area, removing the nickel-gold plating layer in the area, and meanwhile, retaining the nickel-gold plating layer in the long straight edge sealing area on the kovar alloy cover plate; the kovar alloy cover plate subjected to laser cleaning correspondingly covers the base, and a long straight edge sealing area of the kovar alloy cover plate is subjected to sealing welding through parallel seam welding; and the short straight edge sealing area of the kovar alloy cover plate is subjected to sealing welding through laser welding. According to the method, through partition surface treatment, the high-airtightness seal welding reliability is ensured, meanwhile, the advantages of high-efficiency continuity of electric resistance welding and gas control of laser welding are achieved, and the method is particularly suitable for packaging and manufacturing of small-sized and high-stability patch crystal oscillators such as 3215 and the like.