64results about How to "Reduce thermomechanical stress" patented technology

The invention discloses a packaging structure and a packaging method of a semiconductor device. The packaging structure of the semiconductor comprises a chip, a passivation layer positioned above the chip, a pad positioned above the passivation layer, a first through hole running through the chip and the passivation layer along a thickness direction to the outside of the pad, a seed crystal layer positioned in the inner wall of the first through hole, a conductor layer positioned on the seed crystal layer, a conductive layer filling up the first through hole, a second through hole, an insulating medium layer, a convex point lower metal layer and convex points, wherein the seed crystal layer, the conductor layer and the conductive layer in the first hole form a first conductive plug; the second through hole runs through the chip and the passivation layer along the thickness direction to the outside of the pad, is positioned around the first through hole and shares a side wall with the first through hole; the insulating medium layer is positioned above the chip, fills up the second through hole and is exposed out of the first conductive plug; the convex point lower metal layer is positioned on the insulating medium layer on the first conductive plug and the periphery of the conductive plug; and the convex points are on the convex point lower metal layer. In the packaging structure and the packaging method, ultra high capacitance caused by TSV interconnection is avoided and the electrical property of the semiconductor packaging structure is improved.

The active cooling panel comprises a first part and a second part of thermostructural composite material, each having an inside face and an opposite outside face, the parts being assembled together by bonding their inside faces together, and channels being formed by indentations formed in the inside face of at least one of the first and second parts. The panel further includes a sealing layer bonded to at least one of the first and second parts and situated at a distance from the assembled-together inside faces thereof. The invention is applicable to making heat exchanger walls such as the walls for the combustion chambers of aircraft engines, or the diverging portions of rocket engines, or plasma confinement chambers in nuclear fusion reactors.

A method for manufacturing a sensor element is provided for detecting at least one property of a measuring gas in a measuring gas chamber, in particular for detecting a proportion of a gas component in the measuring gas or a temperature of the measuring gas. The method includes the following steps: providing at least one solid electrolyte which includes at least one functional element; applying, at least in sections, at least one first layer made of a ceramic material to the solid electrolyte, the first layer having a first porosity after the application; and applying, at least in sections, at least one second layer made of a ceramic material, the second layer having a second porosity after the application, and the first layer differing from the second layer with respect to at least one material property. Moreover, a sensor element which is manufacturable according to this method is provided.

A device for measuring pressure, e.g., for measuring high pressure, including a pressure transducer that is arranged in a housing and includes sensor elements and a sensor diaphragm on a first side, and on a second side opposite the first side is provided with a cutout that extends from the second side to the sensor diaphragm. The pressure transducer is formed as a semiconductor pressure transducer and, with an edge area of the second side surrounding the cutout, is directly soldered onto a support part, provided with a first pressure-channel section, with the aid of a solder layer in such a manner that the first pressure-channel section and the cutout are interconnected.

Disclosed is a conductive composition useful for the preparation of electrically conductive structures on a substrate comprising a plurality of metal particles, a plurality of glass particles and a vehicle comprising at least one cellulose derivative and at least one solid organopolysiloxane resin dissolved in a mutual organic solvent. The solid organopolysiloxane resin acts as adhesion promoter and assists in stably dispersing the metal and glass particles to avoid an agglomeration of such particles without degrading the rheological properties. From such conductive compositions uniform well adherent electrically conductive structures essentially free from defects in the form of cracks, bubbles or coarse particulates can be prepared on dielectric or semiconductor substrates such as silicon wafers in an efficient and cost-saving manner e.g. by screen printing, drying and sintering while inducing only low warping of the substrate. These characteristics render said conductive compositions particularly useful for the fabrication of electrodes of a semiconductor solar cell helping to increase the cell conversion efficiency.

Thermo-mechanical stress on vias is reduced, thereby reducing related failures. This can be done by maintaining a via-to-metal area ratio at least as large as a predetermined value below which the additional stress on the vias does not significantly increase.

A particulate filter for purifying exhaust gases of an internal combustion engine, in particular of a diesel engine, comprises a filtering body and heating elements for initiating combustion of soot particles accumulated on and in the filtering body. The heating elements comprise at least a hot spot ceramic ignitor (3). The invention is applicable in the automotive industry.

Porous sintered anode bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelpiped shapes are used, cathode coverage at the edges and corners is non-uniform and failures occur at those locations. Rectangular prisms, obround prisms and cylindrical prisms are formed with transition surfaces at edges and corners, such as chamfers and curves, to enhance cathode layer uniformity. The transition surface greatly enhances the application of polymer slurries.

A semiconductor device (1700), which comprises a workpiece (1201) with an outline (1711) and a plurality of contact pads (1205) and further an external part (1701) with a plurality of terminal pads (1702). This part is spaced from the workpiece, and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element (1203) interconnects each of the contact pads with its respective terminal pad. Thermoplastic material (1204) fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline (1711) substantially in line with the outline of the workpiece, and fills the space (1707) substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.

A solar receiver for a thermal power plant including a plurality of absorber modules, each absorber module including at least one face configured to be illuminated by a solar flux, wherein the modules are arranged side by side forming a paving. Each absorber module further includes its own fluid circuit in which a fluid to be heated by the solar flux can flow, the fluid circuits of the absorber modules being connected to one another.

A heat exchanger for cooling of charge air for an internal combustion engine of a motor vehicle is provided. The heat exchanger has a preliminary stage, a main stage, and a compensating component. The preliminary stage has at least one preliminary stage fixed bearing base and a preliminary stage floating bearing base. The main stage has at least one main stage fixed bearing base and a main stage floating bearing base. In a heat transfer region of the main stage, at least one main stage channel for a main stage coolant is disposed. The compensating component is configured to compensate a position difference between corresponding components of the preliminary stage and the main stage, whereby the position difference is based on a thermally induced elongation difference between the at least one preliminary stage channel and the at least one main stage channel.

A semiconductor device, which comprises a workpiece with an outline and a plurality of contact pads and further an external part with a plurality of terminal pads. This part is spaced from the workpiece and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element interconnects each of the contact pads with its respective terminal pad. Thermoplastic material fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline substantially in line with the outline of the workpiece, and fills the space substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.

A cast turbine blade having a platform and hollow blade airfoil arranged thereon, wherein the blade airfoil has a pressure-side blade wall and a suction-side blade wall that extend, along a centrally arranged curved profile centerline, from a common leading edge to a common trailing edge, and having a transition, with an outer contour profile, between the blade airfoil and the platform. The blade walls each have a locally determined blade wall thickness, wherein the turbine blade has, internally, a contour profile that partially matches the outer contour profile of the transition such that the region of the transition has an essentially constant blade wall thickness. In the transition, the contour profile at a surface section of the blade airfoil facing the leading edge is such that the blade wall thickness is increased there in comparison to the blade wall thickness of the transition away from the leading edge.

The invention discloses a full-bridge integration module based on PCB embedding process. The full-bridge integration module comprises a full-bridge power circuit, high-frequency decoupling capacitors,a drive circuit, power devices and a radiator which are arranged on a PCB embedding module. The power devices are four gallium nitride devices or four silicon carbide devices which are connected in series and in parallel to form a full-bridge circuit, the full-bridge circuit is connected with the high-frequency decoupling capacitors and the drive circuit, and the full-bridge circuit, the high-frequency decoupling capacitors and the drive circuit are connected with the radiator to form an embedded full-bridge integration module. The full-bridge integration module greatly reduces the parasiticinductance, can promote the high-frequency operation of the wide bandgap device and is beneficial to the promotion of the power density of the system.

The invention discloses a preparation method of a nanowire silver film for packaging and interconnection of a large-size power semiconductor integrated circuit. The preparation method comprises the following steps: diluting and purifying a silver nanowire mother solution, and carrying out filter pressing or suction filtration and drying to obtain the nanowire silver film. The preparation method provided by the invention is simple in process, low in cost and controllable in film thickness. The nanowire silver film prepared through the method has the advantages of being easy to form, free of impurities such as organic matter and the like, high in structural strength, capable of achieving low-temperature sintering, convenient and efficient to use and high in reliability, and the film layer obtained after hot pressing sintering has the advantages of being high in heat conductivity, high in conductivity, low in porosity and the like.