6 results about "Infrared window" patented technology

This invention relates to the field of pyroelectric infrared sensor technology, and discloses a patch-type pyroelectric sensor with thermally insulating pins. The sensor includes a housing with insulating pins fixedly connected to its outer wall. An infrared window is disposed on the upper surface of the housing, and a backplate is disposed on the lower surface. A pyroelectric material element module is disposed inside the housing. The fabrication method of the pyroelectric sensor includes the following steps: Step 1, raw material preparation; Step 2, tool preparation; Step 3, solution preparation; Step 4, thin film substrate cleaning; Step 5, thin film coating; Step 6, thin film drying; Step 7, high-temperature annealing; and Step 8, polarization treatment. The insulating pins effectively isolate the sensor chip from the external environment, preventing external interference and noise from affecting the accuracy and stability of the sensor, thus ensuring the signal quality and reliability of the sensor.

This invention discloses a superhydrophobic radiation-cooling polymer coating, its preparation method, and its application. The coating is white and possesses a bicontinuous micro / nano porous structure. It is prepared by a ternary copolymerization reaction of polyurethane acrylate oligomers, acrylate reactive diluents, and vinyl siloxane porogens. The method involves initiating free radical polymerization of monomers in the porogen under ultraviolet light, inducing rapid phase separation, and naturally evaporating the porogen to obtain the coating. This coating exhibits superhydrophobicity without post-treatment, virtually no absorption in the solar spectrum, and near-100% emissivity in the mid-infrared window. Furthermore, the optical properties and superhydrophobicity of the coating are minimally affected by long-term ultraviolet irradiation, thermal aging, acids, and alkalis. This coating can be applied over large areas in high-performance radiation-cooling applications.

The embodiment of the present application provides an infrared thermoelectric spectral imaging system and an infrared imaging method, and the system comprises: an imaging lens and a thermoelectric detector, the thermoelectric detector comprises: an infrared window, a filter film, a modulation structure and a detector array, the imaging lens, the infrared window and the detector array are sequentially arranged along the optical axis direction of the imaging lens, the filter film is attached to the infrared window, and the modulation structure is located between the infrared window and the detector array. By arranging the filter film on the infrared window and arranging the modulation structure between the infrared window and the detector array, the detection performance of the thermoelectric detector is improved without changing the structure of the current thermoelectric detector, and high-precision measurement of the spectrum of the incident light from the outside world is realized.

An infrared window cleaning system includes: an upstream robotic arm for adsorbing infrared windows from an upstream window box, the infrared windows having metallized portions, the metallized portions having a first facet and a second facet, the upstream robotic arm adsorbing the first facet; an upstream conveyor mechanism for receiving and clamping the two second facets and conveying them downstream; a first working module for receiving and clamping the two second facets and soaking them; a second working module for receiving and clamping the two second facets and wiping them with a nano-sponge on the front and rinsing them with cleaning liquid on the back; a third working module for receiving and clamping the two second facets and inverting them, wiping them with a nano-sponge on the back and rinsing them with cleaning liquid on the front; a fourth working module for receiving and clamping the two second facets and drying them on both sides; a downstream conveyor mechanism for receiving and clamping the two second facets and conveying them downstream; and a downstream robotic arm for removing the infrared window from the downstream conveyor mechanism and conveying it to the downstream window box.

IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.