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Chalcogenide phase-change film capable of being used for multispectral active optical regulation and preparation method thereof

A technology of optical control and chalcogenide thin film, which is applied in the field of optical thin film and phase-change optical material, can solve the problems of low transmittance, high absorption coefficient, and unfavorable preparation of optoelectronic integrated devices, etc., to meet the requirements of integration and light transmission good effect

Inactive Publication Date: 2020-07-10
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the characteristics of the material components, its transmission band is limited to the mid-infrared band greater than 2 microns, and the transmittance is very low in the visible light and communication bands due to the high absorption coefficient
This is not conducive to the preparation of optoelectronic integrated devices in the visible light and communication bands

Method used

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  • Chalcogenide phase-change film capable of being used for multispectral active optical regulation and preparation method thereof
  • Chalcogenide phase-change film capable of being used for multispectral active optical regulation and preparation method thereof
  • Chalcogenide phase-change film capable of being used for multispectral active optical regulation and preparation method thereof

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Experimental program
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Embodiment 1

[0022] The general chemical formula of the chalcogenide phase change film prepared in this example that can be used for multi-spectral active optical control is Sb x S 100-x , in this example, x=40.

[0023] Sb 2 S 3 The film is prepared by thermal evaporation method, and the vacuum degree is less than 10. -6 In the vacuum chamber of Pa pressure, place the quartz substrate on the upper sample stage of the vacuum coating machine, and heat the Sb by heating the evaporation boat. 2 S 3 The target glass, the specific preparation method includes the following steps:

[0024] S1. First, Sb was prepared in a quartz ampoule by a traditional melting-quenching method 2 S 3 The block is ground into powder and placed in the heating boat of the high vacuum evaporation equipment, and the powder particles are not larger than 200 μm; the film substrate is placed in the evaporation chamber on a rotating disk at a height of 30-50 cm from the heating boat source , the temperature of the ...

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Abstract

The invention relates to a chalcogenide phase change film capable of being used for multispectral active optical regulation and a preparation method, and belongs to the field of optical films and optical phase change materials. The chemical formula of the phase change thin film is Sb<x>S<100-x>, wherein x is greater than 20 and less than 50. The amorphous high-quality optical thin film is preparedby adopting a high-vacuum rapid thermal deposition method. The film can be reversibly converted between a high refractive index (amorphous state) and a low refractive index (crystalline state) underthe thermal action of an external field. The crystalline state and the amorphous state of the material film can have obvious difference in refractive index within the range of 0.55-25 [mu]m, the lighttransmittance is good, the material film can be used for preparing a multispectral light field active regulation and control device, and the development requirements for integration, miniaturizationand multifunction of a traditional light field regulation and control device can be met.

Description

technical field [0001] The invention belongs to the technical field of optical films and phase-change optical materials, and more particularly relates to a chalcogenide phase-change film that can be used for multi-spectral active optical regulation and a preparation method thereof. Background technique [0002] With the explosive growth of people's demand for information capacity, the demand for new electronic components for mobile Internet and Internet of Things technologies has grown particularly significantly. In particular, with the advancement of the 5G industry, new optoelectronic components for emerging industries and using new processes or new materials have been highly valued by the industry and scientific research circles. In particular, the development requirements of miniaturization, integration and multi-function are put forward for the on-chip integrated optoelectronic devices. Based on such development requirements, how to realize the feeding of multiple opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01G02F1/00C23C14/24C23C14/06C23C14/58
CPCC23C14/0623C23C14/24C23C14/5806G02F1/009G02F1/0147
Inventor 张斌杨泽林李朝晖曾平羊夏迪吴家越孙耀东宋景翠朱莺
Owner SUN YAT SEN UNIV
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