Manufacturing method of composite vapor chamber with base plate made of molybdenum-copper or tungsten-copper alloy and other heat sink materials

Abstract

The invention discloses a manufacturing method of a composite vapor chamber with a base plate made of molybdenum-copper or tungsten-copper alloy and other heat sink materials. The vapor chamber is of a composite structure of heat sink materials and oxygen-free copper. A wick of the vapor chamber is of a copper powder sintered or foamy copper structure. The method comprises the steps that high-temperature reduction treatment is carried out on molded copper powder or foamy copper, the treated copper powder or foamy copper is sintered to a pure-copper upper cover plate and the thin molybdenum-copper or tungsten-copper alloy base plate, a thin copper column or a foamy copper column is used as a supporting column, the oxygen-free copper cover plate and the molybdenum-copper or tungsten-copper alloy base plate are welded through copper-silver alloy, and the needed vapor chamber is manufactured. The vapor chamber is of the composite structure of the oxygen-free copper plate and the base plate made of the high-conductivity low-expansion heat sink materials like molybdenum-copper or tungsten-copper alloy, wherein the molybdenum-copper or tungsten-copper alloy face can directly make tight contact with chips of high-power electric and electronic devices such as a thyristor, an IGBT and an IGCT. It is ensured that the heat expansion coefficients of the chips are matched with those of the heat sink materials in the heated process, the heat sink materials and the vapor chamber are integrated, the heat resistance is greatly reduced, and the requirement for rapid temperature equilibrium and efficient heat dissipation is met.

Description

technical field [0001] The invention relates to the manufacture of a vapor chamber. The design of the vapor chamber integrates the heat sink material with the structural design of a conventional vapor chamber, and the required heat dissipation sources such as chips can be directly integrated into the heat chamber of the vapor chamber. On the surface of the sink material, the thermal resistance and the required thickness and space requirements generated by the integration of the original vapor chamber and heat sink material are greatly reduced, which can achieve the purpose of rapid heat conduction and heat dissipation, and improve reliability. Background technique [0002] Thermal management is a very important link in the development of modern equipment, because effective thermal control of the operating temperature of semiconductor electronic equipment can ensure the stability and reliability of its work. There are many devices and methods to realize thermal management, am...

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Problems solved by technology

In addition, the connection layer is added, which also causes structural changes, increases in geometric size and weight, and relativel

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