The invention relates to a double half-Heusler
alloy thermoelectric material with low
lattice thermal conductivity and a preparation method thereof, the thermoelectric material is any one of a p-type thermoelectric material or an n-type thermoelectric material, the
chemical formula of the p-type thermoelectric material is Sc0. 6V0. 5Co1-xNixSb, x is more than or equal to 0 and less than or equal to 0.12, and the n-type thermoelectric material is one of Sc0. 6V0. 5Co1-xNixSb. The
chemical formula of the n-type thermoelectric material is Sc0. 5V0. 6Co1-yNiySb, wherein y is greater than or equal to 0 and less than or equal to 0.30. The preparation method comprises the following steps: mixing Sc, V, Co, Ni and Sb,
grinding, sequentially carrying out
sintering and vacuum packaging treatment to obtain a thermoelectric material
wafer, and carrying out high-temperature annealing treatment on the thermoelectric material
wafer to obtain the double half-Heusler
alloy thermoelectric material with low
lattice thermal conductivity. Compared with the prior art, the method has the advantages that the prepared double half-Heusler
alloy thermoelectric material is replaced by the heterovalent elements, the Sc / V ratio is accurately regulated and controlled, p-type and n-type
thermoelectric materials based on the same parent compound are successfully obtained, and the two materials both show promising thermoelectric performance.