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Nano level metal telluride preparing process

A nano-scale, telluride technology, applied in selenium/tellurium compounds, chemical instruments and methods, binary selenium/tellurium compounds, etc., can solve the problems of high reaction temperature and high cost of reactants

Inactive Publication Date: 2002-12-11
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But it also requires a higher reaction temperature (greater than 400°C), and the cost of reactants is higher

Method used

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  • Nano level metal telluride preparing process
  • Nano level metal telluride preparing process
  • Nano level metal telluride preparing process

Examples

Experimental program
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Effect test

Embodiment 1

[0034] BiCl 3 2H 2 O (20mmol), Te powder (30mmol), KOH (90mmol) and KBH 4 (30mmol) into a 100ml autoclave, add solvent N,N-dimethylformamide (DMF) to 90% of its capacity, and react at 100°C for 24 hours. Cool naturally to room temperature, filter, wash thoroughly with water and ethanol, and dry in vacuum to obtain black Bi 2 Te 3 powder. Compound XRD spectrum see figure 1 a; the appearance is rod-shaped particles with a rod diameter of 10 nanometers and a length greater than 100 nanometers (see figure 2 ). ( figure 1 corrected)

Embodiment 2

[0036] BiCl 3 2H 2 O (20mmol), Te powder (30mmol), KOH (120mmol) and KBH 4 (30mmol) into a 100ml autoclave, add solvent N,N-dimethylformamide (DMF) to 90% of its capacity, and react at 130°C for 24 hours. Naturally cooled to room temperature, filtered, thoroughly washed with water and ethanol, and dried in vacuum at 60°C to obtain black Bi 2 Te 3 powder. Compound XRD spectrum see figure 1 B; morphology is a spherical particle with an average particle diameter of 20 nanometers (see image 3 ).

Embodiment 3

[0038] Bi(NO 3 ) 3 ·5H 2 O (20mmol), Te powder (30mmol), KOH (160mmol) and KBH 4(30mmol) into a 100ml autoclave, add solvent N,N-dimethylformamide (DMF) to 80% of its capacity, and react at 100°C for 24 hours. Naturally cool to room temperature, filter, wash thoroughly with water and ethanol, and dry in vacuum at 80°C to obtain black Bi 2 Te 3 powder. Compound XRD spectrum see figure 1 c; morphology is a spherical particle with an average particle diameter of 20 nanometers (see Figure 4 ).

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Abstract

During the preparation of nano-metal telluride, using nitrate or chloride of Bi, Sn or Pb and simple substance Te as raw material, N, N-dimethyl formamide as solvent, the thermoelectric nano-materialPb or Sn doped MxTey (M=Bi, Sn or Pb), Bi2Te3 or Pb Te compound is produced through reaction at 100-180 deg.c. By means of the control of reaction condition, spherical, squared or rod nanometer crystal particle with 100 nm below size may be obtained easily. The Bi2Te3 and PbTe based compound after being sintered are used as room temperature and middle temperature thermoelectric material with highest thermoelectric conversion efficiency separately.

Description

technical field [0001] The invention relates to a preparation method of a thermoelectric material, in particular to a synthesis technology of a nanoscale telluride. It can be used in technical fields such as thermoelectric power generation (waste heat utilization), thermoelectric refrigeration and cooling of microelectronic devices (chips). Background technique [0002] Rowe gave a detailed introduction to thermoelectric materials in his book "CRC Handbook of Thermoelectrics" (published by CRC Press in 1995). Among all current thermoelectric materials, bismuth telluride (Bi 2 Te 3 ) series and lead telluride (PbTe) series semiconductor materials are currently recognized as the best room temperature and medium temperature thermoelectric materials respectively. Their thermoelectric conversion efficiency is expressed by the thermoelectric quality factor ZT, where Bi 2 Te 3 The ZT is about 0.6 (pure Bi 2 Te 3 ) and 1.0 (doped Bi 2 Te 3 ), which are the industry standard...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C01B19/04
Inventor 南策文邓元周西松韦国丹刘静
Owner TSINGHUA UNIV
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