2 results about "Lead telluride" patented technology

The invention discloses a tellurium nanowire preparation method based on a chemical vapor deposition method and application thereof, and belongs to the field of one-dimensional nano material preparation, the preparation method comprises the following steps: placing lead telluride powder in a source region of a chemical vapor deposition system, and placing a substrate in a downstream deposition region of the source region; vacuumizing the chemical vapor deposition system, and introducing inert protective gas; the source area is heated to the growth temperature, meanwhile, the temperature of a deposition area where the substrate is located is kept at a certain temperature, and heat preservation growth is carried out under the condition; and after the growth is finished, naturally cooling the chemical vapor deposition system, and obtaining the tellurium nanowire on the surface of the substrate. According to the method disclosed by the invention, the high-purity single-crystal Te nanowire can be directly and efficiently grown on the substrate.

A method for preparing an n-type lead telluride-based thermoelectric material with synergistically improved high-temperature stability and thermoelectric performance, using the chemical formula PbTe. 1‑x I x A composite material was prepared by introducing 0.25–0.75 wt.% micron-sized metallic Mo powder into an n-type iodine-doped PbTe matrix, followed by ball milling and spark plasma sintering (SPS). Utilizing the high melting point of Mo powder and its chemical affinity for Te, a physical barrier was constructed at the grain boundaries, forming Mo-Te bonds that effectively suppressed Te volatilization at high temperatures. Simultaneously, the matching thermal expansion coefficients of Mo and PbTe prevented the formation of microcracks during thermal cycling. Experiments showed that the sample with 0.5 wt.% Mo exhibited significantly improved thermoelectric performance retention after long-term aging at 750 K without sacrificing the room-temperature thermoelectric figure of merit. This invention features a simple and low-cost process, significantly improving the high-temperature service stability of n-type PbTe materials, and is suitable for the field of thermoelectric power generation.