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P-n type lead telluride/polypyrrole double-layer thermoelectric thin film material and preparation method thereof

A technology of pyrrole double layer and thermoelectric thin film, which is applied in the direction of thermoelectric device node lead-out material, thermoelectric device manufacturing/processing, etc., to achieve the effect of low cost and good thermoelectric performance

Active Publication Date: 2019-01-08
HENAN INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above methods have prepared some composite materials with high thermoelectric properties, but by selecting suitable P-type and N-type thermoelectric materials, nano-multilayer thermoelectric films are prepared, and P-type and N-type multilayer thermoelectric films can realize P-N structures. Synergistic effect, in order to achieve the purpose of improving the thermoelectric properties of materials, but there are few studies on the preparation of p-n type organic-inorganic double-layer thermoelectric thin film materials. This patent proposes to use hydrothermal method combined with gas phase method to prepare p-n type lead telluride / polypyrrole double-layer thermoelectric film

Method used

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  • P-n type lead telluride/polypyrrole double-layer thermoelectric thin film material and preparation method thereof

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Embodiment 1

[0019] The present invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric film material, which adopts a hydrothermal method combined with a gas phase method to prepare a p-n type lead telluride / polypyrrole double-layer thermoelectric film.

[0020] (1) Prepare lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water. The quality of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is: 1:1.5:0.5:0.2, add the above mixture to the PTFE lining of the reactor, and place the silicon wafer with electrodes in the PTFE lining at an angle of 35°C, the reaction temperature is 100°C, and the reaction time is 6h. After the reaction, the sample is taken out, and the resulting sample is washed several times with deionized water and alcohol, and dried at 50°C for 2h. The lead telluride layer The thickness of the film is 28.9nm;

[0021] (2) Prepare a polypyrrole...

Embodiment 2

[0024] The present invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric film material, which adopts a hydrothermal method combined with a gas phase method to prepare a p-n type lead telluride / polypyrrole double-layer thermoelectric film.

[0025] (1) Prepare the lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water. The quality of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is 1:1.5:0.5:0.2, and the ratio of alcohol to water is 1:2. Add the above mixture to the PTFE lining of the reactor, and place the silicon wafer with the electrode on the poly In the tetrafluoroethylene lining, the inclination angle is 10°, then the reaction temperature is 100°C, and the reaction time is 5h. After the reaction is over, the sample is taken out, and the resulting sample is washed several times with deionized water and alcohol. After drying at 50℃ for...

Embodiment 3

[0028] The present invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric film material, which adopts a hydrothermal method combined with a gas phase method to prepare a p-n type lead telluride / polypyrrole double-layer thermoelectric film.

[0029] (1) Prepare lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water. The quality of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is: 1:2: 0.8: 0.5, add the above mixture to the PTFE lining of the reactor, and place the silicon wafer with the electrode in the PTFE lining at an angle of 45°C, the reaction temperature is 150°C, and the reaction time is 15h. After the reaction is over, the sample is taken out, and the resulting sample is washed several times with deionized water and alcohol, and dried at 60°C for 5 hours. The lead telluride layer The thickness of the film is 300nm;

[0030] (2) Prepa...

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Abstract

The invention provides a p-n-type lead telluride / polypyrrole double-layer thermoelectric film material and a preparation method thereof are disclose. That p-type lead telluride / polypyrrole double-layer thermoelectric film material is prepared by a hydrothermal method and a gas phase method. N-type lead telluride / polypyrrole bilayer thermoelectric thin film, the thickness of the lead telluride layer thin film is 20 nm-300 nm, and the thickness of the polypyrrole film is 20 nm-300nm. The lead telluride / polypyrrole double-layer thermoelectric thin film material prepared by the method has good thermoelectric performance, can be used for portable wireless sensor power supply, refrigeration of integrated circuit chips, refrigeration of light emitting diodes and photodetectors and other fields, has the advantages of simplicity, low cost, convenience and rapidity, and can be produced on a large scale.

Description

Technical field [0001] The invention relates to the technical field of composite material preparation, in particular to a p-n-type lead telluride / polypyrrole double-layer thermoelectric film material and a preparation method thereof. Background technique [0002] Energy and environmental issues are two urgent issues that need to be resolved in order to achieve sustainable development in today’s society. The search for new, clean and alternative energy sources has become a major issue that academia and industry are concerned about. Thermoelectric conversion materials are materials that use the Seebeck effect and the Peltier effect to realize the direct mutual conversion of heat and electric energy, and are important clean energy materials. Power generation or refrigeration devices made of thermoelectric materials have the advantages of reliable performance, no pollution, no noise during operation, and long service life. They are widely used in thermoelectric power generation and e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/24H01L35/34H10N10/852H10N10/01H10N10/856
CPCH10N10/856H10N10/852H10N10/01
Inventor 刘少辉王娇丁俊郝好山赵利敏夏思怡
Owner HENAN INST OF ENG
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