Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument

A semiconductor and component technology, which is applied in the field of semiconductor components for thermoelectric modules of real-time fluorescent quantitative PCR instruments, can solve problems such as potential difference increase, and achieve good thermoelectric conversion, high bending strength, and excellent thermoelectric performance.

Inactive Publication Date: 2021-06-25
HANGZHOU ANYU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the concentration difference created during this process in the conduction band, the charge carriers

Method used

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  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument
  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument
  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0033] In some embodiments of the invention, a method of preparing a semiconductor element comprising the steps of:

[0034] Sncl by weight 2 · 2h 2 O Soluble in 100 to 150 parts by weight of unhappy ethanol, so that SN 2+ The concentration is 0.25 ~ 75mol / L, reflows from 85 to 100 ° C for 10 to 14 h, then press SN 4+ : SR 2+ : M 4+ = 1-A-B: 2A: B Add SRCL 2 · 6h 2 O, MCL 4 Among them, 0.1 ≤ a <0.3, 0.2 ≤ b <0.5; one of the metal M is Ti, Zr, and HF, continues to return to flow from 85 to 100 ° C for 10 to 14 h, and Chenhua 22 ~ 35 ° C 28h to get a sol;

[0035] Using the impregnation-pull process, the ceramic substrate was sequentially washed with a concentration of 10%, distilled water, anhydrous ethanol, dried at 45 to 55 ° C for 2 to 3 h, and then impregnated after the above sol 1 ~ 3min, vertical Take a smooth pulling 3 to 6 times, then dried at 75 to 100 ° C for 20 to 30 min, then heat treatment at 550 to 650 ° C for 2 to 4 h, and the nanoparticle film was obtained;

[003...

Example Embodiment

[0040] Example 1

[0041] A method of preparing a semiconductor element, comprising the steps of:

[0042]Sncl by weight 2 · 2h 2 O Soluble in 120 parts by weight of anhydrous ethanol, so that SN 2+ The concentration is 0.45 mol / L, reflows back at 90 ° C for 10 h, then press SN 4+ : SR 2+ : HF 4+ = 0.6: 0.2: 0.3 proportion Add SRCL 2 · 6h 2 O, HFCL 4 Continue to return to flow at 90 ° C for 12 h at 30 ° C for 24 hours, resulting in a sol;

[0043] The impregnation-pull process is used to clean the dimensions of 20 mm × 10 mm × 4 mm, and the concentration is 10% dilute hydrochloric acid, distilled water, and no water ethanol is sequentially washed, and 3 h is dried at 45 ° C, then impregnated After the above sol 1min, vertically smoothly tied 5 times, then dried at 85 ° C for 20 min, then heat treatment at 550 ° C for 4 h, prepared (SN 0.6 SR 0.2 HF 0.3 ) O 2 Nano particulate membrane;

[0044] The weight ratio of the silver paste and the turbine is diluted with a weight ratio of...

Example Embodiment

[0045] Example 2

[0046] A method of preparing a semiconductor element, comprising the steps of:

[0047] Sncl by weight 2 · 2h 2 O Soluble in 140 parts by weight of anhydrous ethanol, so that SN 2+ The concentration is 0.65mol / L, reflows in 12 h at 100 ° C, then press SN 4+ : SR 2+ : HF 4+ = 0.4: 0.4: 0.4 proportion of 0.4 Add SRCL 2 · 6h 2 O, HFCL 4 , Continued to return to flow at 100 ° C for 12 h, and Chenhua at 32 ° C for 26 h, resulting in a sol;

[0048] The impregnation-pull process is used, and the size of a β-silicon nitride ceramic substrate having a size of 20 mm × 10 mm × 4 mm is washed sequentially by a concentration of 10%, distilled water, anhydrous ethanol, and dried at 50 ° C for 2.5 h, then After immersing in the above sol 2min, vertically stable four times, then dried at 90 ° C for 25 min, then heat treatment at 600 ° C for 3 h, resulting in (SN 0.4 SR 0.4 HF 0.4 ) O 2 Nano particulate membrane;

[0049] The weight ratio of the silver paste and the turbine i...

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PUM

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Abstract

The invention discloses a semiconductor element for a thermoelectric module of a real-time fluorescent quantitative PCR instrument. The semiconductor element comprises a ceramic substrate and a nanoparticle film coated on the ceramic substrate. The preparation method comprises the steps of dissolving tin salt in absolute ethyl alcohol, refluxing, then adding strontium salt and metal M salt, and continuing refluxing and aging to obtain sol; dipping the ceramic substrate in the sol by adopting a dipping-pulling process, and pulling to prepare a nano-particle film; and diluting the silver paste, coating two ends of the nanoparticle film with the silver paste for heat treatment, and welding leads at two ends of a silver electrode to obtain the semiconductor element. The nano-particle film is prepared from (Sn<1-a-b>Sr2aMb)O2, wherein a is greater than or equal to 0.1 and less than to 0.3, and b is greater than or equal to 0.2 and less than 0.5; and the metal M is one of Ti, Zr and Hf. The semiconductor element has a high power factor, a Seebeck coefficient, bending strength and a low friction coefficient.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semiconductor element for a thermoelectric module of a real-time fluorescence quantitative PCR instrument. Background technique [0002] A number of thermoelectric modules are contained in a real-time fluorescent quantitative PCR instrument, and a thermoelectric module includes, for example, at least two semiconductor devices (p-doped and n-doped), provided on the upper and lower sides of the module (facing the hot side or the cold side) , with alternating conductive bridges, and which form the smallest thermoelectric unit or element. Thermoelectric materials are of the type that can convert thermal energy into electrical energy or vice versa (Peltier effect) in an efficient manner (Seebeck effect). If a temperature gradient is provided on both sides of the semiconductor element, a voltage potential develops across the ends of the semiconductor element. Charge carriers...

Claims

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Application Information

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IPC IPC(8): H01L35/22H01L35/34B01L7/00C12M1/00G01N21/64
CPCB01L7/52G01N21/6428H10N10/855H10N10/01
Inventor 章贤骏宣兆康方涌章佩娟
Owner HANGZHOU ANYU TECH CO LTD
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