59 results about "Ga element" patented technology

A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device includes forming a contact resistance improved layer on a p-type GaN-based semiconductor layer with at least one metal selected from the group of Au, Mg, Mn, Mo, Pd, Pt, Sn, Ti and Zn, heat-treating the p-type GaN-based semiconductor layer so that elements in the contact resistance improved layer diffuse into the p-type GaN-based semiconductor layer and that Ga elements in the p-type GaN-based semiconductor layer dissolve into the contact resistance improved layer, and removing the contact resistance improved layer remaining on the p-type GaN-based semiconductor layer.

The invention discloses an R-T-B type sintered permanent magnet. The sintered permanent magnet is characterized in that contents of impurity elements are controlled in the preparation process to enable that C is less than or equal to 800ppm, O is less than or equal to 800ppm and N is less than or equal to 200ppm in the sintered magnet; the microstructure of the magnet comprises an R2T14B main phase, a crystal boundary phase and a triangular region 1, wherein the crystal boundary phase refers to a separation part between two main phase crystal particles; the crystal boundary phase comprises a first crystal boundary phase in the direction of easy orientation axis of the magnet and a second crystal boundary phase perpendicular to the direction of easy orientation axis of the magnet; the crystal structures of the two types of crystal boundaries are both face-centered cubic structures; the triangular region 1 is a rare earth-rich phase with high content of Al+Ga elements, and the rare earth-rich phase is an amorphous phase, wherein the component atomic percentages satisfy the relation as follows: Pr+Nd is greater than or equal to 65% and less than or equal to 88%; Al+Ga is greater than or equal to 10% and less than or equal to 25%; O is less than or equal to 10%; and other elements Fe+Cu+Co is less than or equal to 2%. By virtue of the magnet structure, coercivity can be greatly improved.

A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

A process for producing a group III nitride compound semiconductor light emitting device, the group III nitride compound semiconductor light emitting device and a lamp, having excellent producability and excellent light emitting characteristics are provided. Such a process for producing a group III nitride semiconductor light emitting device is a process for producing a group III nitride semiconductor light emitting device having a semiconductor layer 20 constituted by laminating an n-type semiconductor layer, a light-emitting layer 15 and a p-type semiconductor layer 16. Each of these consists of a group III nitride semiconductor, including a step of forming at least a part of the semiconductor layer 20 by a sputtering method, in which upon forming the p-type semiconductor layer 14 by a sputtering method, a Ga target containing Ga element, and a dopant target consisting of a mixture of an element having a small crystal composition of elements contained in the p-type semiconductor layer 14 and a dopant element is used as a sputtering target, and power is applied simultaneously to both the Ga target and the dopant target.