The
silicon ingot (10) is composed of a unidirectionally solidified structure, has a circular cross-section orthogonal to the solidification direction, has a
number density of heterogeneous inclusions having an equivalent circle
diameter of 3 [mu] m or more of less than 0.01 inclusions / cm2, and has, in the cross-section orthogonal to the solidification direction, a
single crystal section (11) composed of a
single crystal and a polycrystal section (12) composed of a plurality of
crystal grains formed around the
single crystal section (11). The
area ratio of the single
crystal part (11) is 25% or more.