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245results about "Magnetostrictive device manufacture/assembly" patented technology

Variable inductor type mems pressure sensor using magnetostrictive effect

A variable inductor type MEMS pressure sensor using a magnetostrictive effect comprises an inductor array unit and a capacitor unit. The inductor array unit includes a coil unit having a plurality of serially connected circular electrodes formed on a first substrate and a magnetostrictive material thin film corresponding one by one to the circular electrode formed on a second substrate opposite to the first substrate at a predetermined distance in parallel to form an inductor which has the magnetostrictive material thin film as a core of the coil unit for inducing change of magnetic permeability of the magnetostrictive thin film depending on external pressure to vary inductance of the inductor. The capacitor unit constitutes a LC resonant circuit with the inductor array unit to convert magnetic energy discharged in the inductor array unit into a voltage. The variable inductor type MEMS pressure sensor has an excellent resolution because it is more sensitive than a conventional piezoresistive or capacitance sensor, and is manufactured using a MEMS process technology exchangeable with a semiconductor process, thereby enabling miniaturization and a mass package process to reduce the cost of production.
Owner:MDT CORP

Magnetoelectricity antenna based on magnetostrictive piezoelectric materials and preparation method thereof

The invention discloses a magnetoelectricity antenna based on magnetostrictive piezoelectric materials. The magnetoelectricity antenna comprises a magnetostrictive material layer, a piezoelectric material layer, an interdigital electrode and a silicon suspension substrate. A preparation method of the magnetoelectricity antenna based on the magnetostrictive piezoelectric materials comprises the steps that firstly a whole silicon substrate is subject to corrosion to enable the whole silicon substrate to become the silicon suspension substrate, a magnetron sputtering method is further adopted tomake the interdigital electrode on the surface of the silicon suspension substrate, the magnetron sputtering method is further adopted to deposit the piezoelectric material layer on the interdigital electrode, and finally the magnetron sputtering method is adopted to deposit magnetostrictive material layer on the piezoelectric material layer to obtain the magnetoelectricity antenna. The antenna utilizes the magnetostrictive effect to transform electromagnetic wave into mechanical vibration, and utilizes a highly sensitive vibration induction system to transform the mechanical vibration into electrical signals, indirect induction of the electromagnetic wave can be realized, the magnetoelectricity antenna is not limited by the electrics antenna lambada / 4 wavelength theory and has the advantages of being high in sensitiveness and miniaturized, and the size of an existing antenna can be reduced by several orders of magnitudes.
Owner:XIDIAN UNIV

Preparation method of complex phase multiferroic material

ActiveCN107910436AMagnetization state changeRealize the technical effect of electromagnetismMagnetostrictive device manufacture/assemblyMagnetostrictive material selectionSputteringPre deformation
The present invention relates to a preparation method of a complex phase multiferroic material. The method of the present invention comprises the steps of applying an electric field on a substrate toenable a ferroelectric substrate to generate the stress pre-deformation, or applying the tensile stress or pressure stress on the ferroelectric substrate via a mechanical device to generate the pre-deformation; growing a ferromagnetic film on a pre-deformed ferroelectric film substrate via the methods, such as the pulsed laser deposition, the magnetron sputtering, the molecular beam epitaxy, etc.;after the ferromagnetic film is prepared, removing the electric field or the mechanical device on the ferroelectric substrate, and obtaining the complex phase multiferroic material. The ferroelectricsubstrate cannot recover to an original shape under the constraint of the ferromagnetic film, so that the stress is generated at an interface, and the magnetism of the ferromagnetic film is regulatedand controlled by the stress. With the existence of the pre-stress in the complex phase multiferroic material obtained by the present invention, a smaller external electric field can change the magnetization state of the ferromagnetic film, thereby reducing a response field.
Owner:CHINA JILIANG UNIV
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