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Preparation method of complex phase multiferroic material

A technology of multiferroic materials and substrate materials, which is applied in the selection of device materials, the application of magnetic films to substrates, the manufacture/assembly of magnetostrictive devices, etc. , to achieve the effect of reducing the response field

Active Publication Date: 2018-04-13
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the current research on multiferroic heterojunction structures, there are generally disadvantages such as weak electromagnetic effect and high field strength required for control. Therefore, a new preparation method for heterojunction thin films is developed to obtain strong electromagnetic effect and low response field. wait becomes urgent

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The steps are:

[0034] 1) Substrate selection

[0035] Select PMN-PT as the ferroelectric substrate material;

[0036] 2) Substrate prestress loading

[0037] Fix the PMN-PT ferroelectric substrate material in step 1) in a pulsed laser deposition device, and apply an electric field to cause stress pre-deformation of the ferroelectric substrate;

[0038] 3) Preparation of ferromagnetic thin film

[0039] Growth of ferromagnetic Fe thin films on pre-deformed PMN-PT ferroelectric thin film substrates by pulsed laser deposition method;

[0040] 4) Obtain multiphase multiferroic materials

[0041] After the ferromagnetic Fe thin film is prepared, the electric field applied on the PMN-PT ferroelectric substrate in step 2) is removed to obtain a multiphase multiferroic material; the PMN-PT ferroelectric substrate is under the confinement of the ferromagnetic Fe thin film It cannot be changed back to its original shape, so stress is generated at the interface, and the mag...

Embodiment 2

[0043] 1) Substrate selection

[0044] Select BFO as the ferroelectric substrate material;

[0045] 2) Substrate prestress loading

[0046] Fix the BFO ferroelectric substrate material in step 1) in the magnetron sputtering equipment, and apply tensile stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;

[0047] 3) Preparation of ferromagnetic thin film

[0048] Growth of ferromagnetic Co thin films on pre-deformed BFO ferroelectric thin film substrates by magnetron sputtering;

[0049] 4) Obtain multiphase multiferroic materials

[0050] After the ferromagnetic Co thin film is prepared, the mechanical device applied on the ferroelectric substrate in step 2) is removed to obtain a complex-phase multiferroic material; the BFO ferroelectric substrate cannot change back under the constraints of the ferromagnetic Co thin film. The original shape, thus generating stress at the interface, and the magnetism of the ferromagnetic Co thin f...

Embodiment 3

[0052] 1) Substrate selection

[0053] Select PZT as the ferroelectric substrate material;

[0054] 2) Substrate prestress loading

[0055] Fix the PZT ferroelectric substrate material in step 1) in the molecular beam epitaxy equipment, and apply compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;

[0056] 3) Preparation of ferromagnetic thin film

[0057] Growth of ferromagnetic Ni thin films on pre-deformed PZT ferroelectric thin film substrates by molecular beam epitaxy;

[0058] 4) Obtain multiphase multiferroic materials

[0059] After the ferromagnetic Ni film is prepared, the mechanical device applied on the PZT ferroelectric substrate in step 2) is removed to obtain a multiphase multiferroic material; the PZT ferroelectric substrate cannot be changed under the constraint of the ferromagnetic Ni film. Return to the original shape, thus generating stress at the interface, and the magnetism of the ferromagnetic Ni t...

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Abstract

The present invention relates to a preparation method of a complex phase multiferroic material. The method of the present invention comprises the steps of applying an electric field on a substrate toenable a ferroelectric substrate to generate the stress pre-deformation, or applying the tensile stress or pressure stress on the ferroelectric substrate via a mechanical device to generate the pre-deformation; growing a ferromagnetic film on a pre-deformed ferroelectric film substrate via the methods, such as the pulsed laser deposition, the magnetron sputtering, the molecular beam epitaxy, etc.;after the ferromagnetic film is prepared, removing the electric field or the mechanical device on the ferroelectric substrate, and obtaining the complex phase multiferroic material. The ferroelectricsubstrate cannot recover to an original shape under the constraint of the ferromagnetic film, so that the stress is generated at an interface, and the magnetism of the ferromagnetic film is regulatedand controlled by the stress. With the existence of the pre-stress in the complex phase multiferroic material obtained by the present invention, a smaller external electric field can change the magnetization state of the ferromagnetic film, thereby reducing a response field.

Description

technical field [0001] The invention relates to a preparation method of a multiphase multiferroic material, which belongs to the field of material preparation. Background technique [0002] In modern science and technology, magnetic materials and ferroelectric materials have very extensive and important applications, and have penetrated into every part of our daily life. With the development of science and technology and the requirements for miniaturization and multi-function of devices, people naturally think of integrating the two properties into the same material to obtain materials with both magnetic and ferroelectric properties. And the mutual coupling between magnetism and ferroelectricity in the material realizes the regulation of magnetic field on ferroelectricity or electric field on magnetism, and provides the possibility for new prototype devices such as electro-write and magnetic-read storage methods. [0003] Schmid of the University of Geneva in Switzerland fi...

Claims

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Application Information

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IPC IPC(8): H01L41/20H01L41/47H01F41/14H10N35/85H10N35/01
CPCH01F41/14H10N35/85H10N35/01
Inventor 李静彭晓领杨艳婷徐靖才王攀峰金红晓金顶峰洪波王新庆葛洪良
Owner CHINA JILIANG UNIV
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