5results about "Cathode sputtering application" patented technology

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

The invention concerns a method for fabricating an array of magnets (10), the method comprising: - a step of deposition of a coercivity changing element according to a pattern on a first material having a first coercivity value, the coercivity changing element being adapted to change the coercivity of the first material, and - a step of diffusion of the coercivity changing element into certain regions to form a magnetic layer (16) having first areas (A1) made of the first material and second areas (A2) having a second coercivity, made of a second material comprising the first material and the coercivity changing element.

Provided are: a magnetic recording medium having a high magnetocrystalline anisotropy constant Ku and coercive force Hc; and a sputtering target used to produce this magnetic recording medium.　This Pt-oxide sputtering target is formed from 60 vol% or more but less than 100 vol% of a Pt-based alloy phase and more than 0 vol% but 40 vol% or less of an oxide, the Pt-oxide sputtering target being characterized in that the Pt-based alloy phase contains 50 to 100 at% of Pt.

In one embodiment of the present invention, a metallic magnetic thin film is provided, comprising a plurality of columnar structures having an amorphous phase and whose long sides extend in the thickness direction. The columnar structures include a main body portion and a sidewall portion continuous with the main body portion. The columnar structures contain Fe, Co, Si and B. In the sidewall portions, the total amount of Fe and Co is greater than the total amount of Si and B when converted in atomic percentage concentration.

A method for obtaining chiral coupling in ferrimagnetic alloy belongs to the technical field of new materials, and comprises the following steps: 1) a step of depositing tantalum Ta as a seed layer on a Si / SiO2 substrate by using a direct current magnetron sputtering technology; 2) on the basis of the step 1), a step of depositing platinum Pt as a heavy metal layer on the Ta by using the direct current magnetron sputtering technology; 3) on the basis of the step 2), a step of preparing a TM-RE ferrimagnetic alloy on a multilayer film by using a method of direct current co-sputtering of a magnetic transition metal or alloy TM and a rare earth metal RE; 4) on the basis of the step 3), a step of depositing Ta as a cover layer on the multilayer film by using the direct current magnetron sputtering technology, so as to finally obtain a ferrimagnetic multilayer film; and 5) chiral coupling magnetic structure is constructed by using gallium ion irradiation to change magnetic anisotropy of the ferrimagnetic multilayer film. The chiral coupling can be used to construct a race track memory based on the ferrimagnetic, and the race track memory is expected to show a lower power consumption application potential than a traditional ferromagnetic system in a new type of calculation.