80results about "Cathode sputtering application" patented technology

A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5 / 100 to 45 / 100, and wherein the sputtering target contains Nb2O5 as a metal oxide component.

To provide a new multilayer thin film exhibiting a tunnel magnetoresistance effect.SOLUTION: The present invention is a multilayer thin film having an insulating layer and a magnetic layer sandwiching the insulating layer. At least one of the magnetic layers is made of a Co-based alloy containing Al and / or Ga. For example, Co is contained in an amount of 58.5 to 63 at% with respect to the entire Co-based alloy. The Co-based alloy constituting a magnetic layer may be a β phase. The insulating layer is, for example, MgO or MgAl2O4. The magnetic layer on the other side of the insulating layer may be CoFeB (alloy) in addition to CoAl. Each layer is formed by sputtering, and planarization, crystallization, and the like are performed by heat treatment. A magnetic tunnel junction (MTJ) having the multilayer thin film of the present invention exhibits a high magnetoresistance change ratio (MR ratio), and can be applied to a next-generation magnetoresistance memory (MRAM) or the like.SELECTED DRAWING: Figure 3

A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.

[Problem] To electrically connect a lead layer and a protective film reliably even when the film thickness of a protective film that covers a functional film is extremely thin. [Solution] After the conductive protective film 51 is formed on the surface of the functional film 20, reverse sputtering is performed while a portion of the surface of the protective film 51 is covered with a mask 60, thereby physically restoring a natural oxide film 52 formed on the surface of the protective film 51 not covered by the mask 60. Thereafter, a lead layer 40 is formed on the surface of the protective film 51 not covered by the mask 60. Consequently, since the natural oxide film 52 formed on the surface of the protective film 51 can be removed without performing etching, the lead layer 40 and the protective film 51 can be connected electrically without damaging the functional layer 20 even when the film thickness of the protective film 51 is extremely thin.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

The invention discloses a rare earth doped iron-cobalt-based soft magnetic thin film material as well as a preparation method and application thereof. The chemical formula of the components of the rare earth doped iron-cobalt-based soft magnetic thin film material is (Re2Co17) x (Fe0. 65Co0. 35) 1-x, in the formula, Re is at least one of lanthanide elements, scandium and yttrium, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 lt, 0 And x is less than or equal to 0.2. The preparation method of the rare earth doped iron-cobalt-based soft magnetic thin film material comprises the following steps: carrying out double-target magnetron sputtering by adopting a Re2Co17 target material and a Fe < 0.65 > Co < 0.35 > target material, and then carrying out heat treatment. The rare earth doped iron-cobalt-based soft magnetic thin film material has the advantages of high cut-off frequency, high resistivity, small magnetic loss and the like, has excellent high-frequency soft magnetic performance and static magnetic performance, is suitable for being applied to a high-frequency working environment, is simple in preparation process and low in production cost, and is suitable for large-scale industrial production and application.

To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film 51 on the surface of a functional film 20, reverse sputtering is performed with a part of the surface of the protective film 51 covered with a mask 60 to physically reduce a native oxide film 52 formed on a part of the surface of the protective film 51 that is not covered with the mask 60. Thereafter, a lead layer 40 is formed on a part of the surface of the protective film 51 that is not covered with the mask 60. This can remove the native oxide film 52 formed on the protective film 51 without requiring etching. Thus, even when the film thickness of the protective film 51 is very thin, it is possible to electrically connect the lead layer 40 and protective film 51 without damaging the functional film 20.

A system for the fabrication of ε-phase MnAl / Co bilayer thin films, consisting of: a) a high-frequency magnetron sputtering system for the deposition of multilayer thin films on a silicon substrate, the sputtering system comprising: • a system for maintaining base pressure, configured to maintain a constant pressure; • three 2-inch targets consisting of MnAl, Co and Ta; and • a substrate rotation mechanism configured to rotate the substrate at a constant number of revolutions per minute; b) a layer deposition unit that is operationally connected to the RF magnetron sputtering system and enables the sputtering system to deposit layers sequentially: • a 3 nm thick Ta buffer layer on the silicon substrate; • a 60 nm thick MnAl layer on the Ta buffer layer; • a Co layer with a thickness of 1 nm to 5 nm on the MnAl layer; and • a 5 nm thick Ta top layer on the Co layer; c) an annealing furnace configured to anneal the deposited Ta and MnAl layers for 2 hours at 600 °C before the Co layer is deposited; and d) a characterization unit for analyzing the produced thin films, wherein the characterization unit comprises the following: • an X-ray diffraction (XRD) system for structural characterization; • an optical 3D profilometer for measuring surface structure and mean roughness; and • a field emission scanning electron microscope (FESEM) with energy-dispersive X-ray spectrometer (EDS) for analyzing surface morphology and elemental composition.

The invention relates to the technical field of magnetic materials. The invention provides a light metal-based vertical magnetic anisotropy thin film and a preparation method thereof. The light metal-based vertical magnetic anisotropy thin film structure is a light metal non-magnetic layer / CoFeB / MgO / Ta layer multi-layer film, the use of strong spin orbit coupled heavy metal materials such as W and Ta is avoided, and the preparation cost is reduced; according to the preparation method of the light metal-based vertical magnetic anisotropy thin film, atmosphere outside argon is not needed during magnetron sputtering of the thin film, the sputtering rate is controlled through off-axis sputtering to optimize the quality of a CoFeB / MgO interface, annealing machining is not needed, the low-cost vertical magnetic anisotropy thin film is obtained, meanwhile, a stainless steel mask plate in a Hall bar shape is combined, and the light metal-based vertical magnetic anisotropy thin film is obtained. The prepared thin film has a Hall bar shape, so that photoetching processing is not needed, a binding wire can be directly carried out, an abnormal Hall effect test is carried out in a magnetic field, and a rectangular Hall loop is obtained.

A method of fabricating high magnetic anisotropy materials using a metallic high entropy alloy is described in this disclosure. Targets of metals or targets of alloys comprising at least one elemental ferromagnetic material are used in a sputtering tool to deposit on a substrate thin films of high entropy alloys. The sputtering targets may be elemental targets or they may comprise multiple metals. In addition, targets of materials such as boron, platinum, or aluminum may be included in the sputtering process to enhance magnetic properties of the resultant thin films. The sputtering may take place by co-sputtering multiple targets simultaneously or by alternatively sputtering layers from the targets. After sputtering the materials are heated through a rapid thermal annealing process to a high temperature, which facilitates the formation of the desired crystalline phases which exhibit high magnetocrystalline anisotropy.

The invention concerns a method for fabricating an array of magnets (10), the method comprising: - a step of deposition of a coercivity changing element according to a pattern on a first material having a first coercivity value, the coercivity changing element being adapted to change the coercivity of the first material, and - a step of diffusion of the coercivity changing element into certain regions to form a magnetic layer (16) having first areas (A1) made of the first material and second areas (A2) having a second coercivity, made of a second material comprising the first material and the coercivity changing element.

The present application belongs to the technical field of metal magnetic films, and specifically relates to a semi-hard magnetic alloy film material, a preparation method and a magnetic grating device. The preparation method of the semi-hard magnetic alloy film material provided in the present application comprises the following steps: cleaning the substrate, then depositing a FeCoCr film on the surface of the substrate to obtain a prepared FeCoCr film, then performing Al ion implantation on the prepared FeCoCr film, and then performing vacuum annealing; in the Al ion implantation, the implantation energy is 28 keV-32 keV, and the bias voltage is 450 V-500 V; the vacuum annealing temperature is 540℃-560℃. In the preparation method of the specific semi-hard magnetic alloy film material provided in the present application, Al ions are implanted into the FeCoCr film by a specific method, so that the amplitude modulation decomposition temperature of the film is reduced, and then only a relatively low temperature annealing treatment is required to obtain a FeCoCr film with high magnetic properties, thereby avoiding material defects caused by high-temperature processing in traditional methods.

Systems and processes described herein are for forming a material by applying a magnetic material and a boundary material to the substrate; and while applying the magnetic material to the substrate and the boundary material to the substrate, applying a bias voltage to at least the boundary material to form a two-dimensional material between portions of the magnetic material. The material includes the magnetic material and a two-dimensional material confirming to the magnetic material or other material.

The invention relates to a composite antiferromagnetic material with huge adjustable vertical exchange bias and a preparation method and application thereof. According to an embodiment, a composite antiferromagnetic material may include an alternately stacked structure of at least two antiferromagnetic layers including a Mn-based antiferromagnetic material selected from the group consisting of Ni 100-x Mnx, Fe 100-x Mnx, Pt 100-x Mnx, Ir 100-x Mnx, Pd 100-x Mnx, Cr 100-x Mnx, Ga 100-x Mnx, Sn 100-x Mnx, Cu 100-x Mnx, and Ge 100-x Mnx, different from each other, where x is greater than zero and less than 100, and x is greater than 0 and less than 100. The composite antiferromagnetic material provides a vertical exchange bias.

Material with nanogranular structure, comprising: a matrix formed from a fluorine compound with a composition represented by MF, and Metal oxide nanoparticles dispersed in the matrix and having a composition represented by LO, wherein the material with nanogranular structure has a composition represented by LMFO, wherein L is at least one element selected from the group consisting of Fe, Co and Ni, M is at least one element selected from the group consisting of Li, Be, Mg, Al, Si, Ca, Sr, Ba, Bi and rare earth elements, F is fluorine, O is oxygen and an atomic fraction of L is within a range of 0.03 to 0.50, an atomic fraction of M is within a range of 0.03 to 0.30, an atomic fraction of F is within a range of 0.06 to 0.65 and an atomic fraction of O is within a range of 0.04 to 0.50, and where an absolute value of a Faraday rotation angle for light in a wavelength range of 1350 to 1650 [nm] lies within a range of 0.1 [degrees / µm] or more and where the light transmittance for light in a wavelength range of 1000 to 1675 [nm] is in the range of 40 [% / µm] or more.

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

Provided are a sputtering target for a magnetic material, a sputtering target assembly for a magnetic material, and a method for producing a sputtering target for a magnetic material, with which peeling of a redeposited film can be satisfactorily suppressed. A sputtering target for a magnetic material, the sputtering target having a sputtering region and a non-sputtering region, the arithmetic mean curvature (Spc) of peaks on the surface of the non-sputtering region being 3200 mm-1 or more.

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

One embodiment of the present invention provides a metal magnetic substance thin film that includes a plurality of columnar structures, each of which has an amorphous phase and extends longitudinally in the film thickness direction. Each of the columnar structures includes a body portion and a side wall portion contiguous with the body portion. The columnar structures include Fe, Co, Si, and B. In the side wall portions, the total amount of said Fe and Co is greater than the total amount of said Si and B in terms of atom% concentration.

The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.

The application belongs to the field of soft magnetic high-entropy alloy material and magnetron sputtering technology, and particularly relates to a high-entropy alloy and nitride multilayer soft magnetic film for high frequency and a preparation method. The high-entropy alloy soft magnetic film layer comprises Zr and / or B, Fe, Co and Ni elements; the high-entropy alloy soft magnetic nitride film layer comprises Zr and / or B, Fe, Co, Ni and N elements, the N element is nitrogen gas with a certain partial pressure introduced in the magnetron sputtering process and nitrogen atoms are deposited into the high-entropy alloy soft magnetic nitride film layer, pure Ar and argon / nitrogen mixed gas are alternately used, the high-entropy alloy soft magnetic film layer and the high-entropy alloy soft magnetic nitride film layer are alternately sputtered on the surface of the substrate to obtain the multilayer soft magnetic film, the high-entropy alloy nitride soft magnetic film has high resistivity and low coercivity, the high-entropy alloy soft magnetic film has high saturation magnetization, the multilayer soft magnetic film has higher saturation magnetization and resistivity, and is suitable for high frequency application.

The embodiment of the invention provides a reversible magnetic thin film material, a magnetism regulation and control method, a preparation method and a memory, the reversible magnetic thin film material is used for reversible magnetism regulation and control, the reversible magnetic thin film material comprises an Sb-Co alloy type thin film, and the atomic ratio of Sb to Co is 3: 1. According to the reversible magnetic thin film material provided by the embodiment of the invention, a highly reversible block metal magnetic switch is realized, the magnetic modulation amplitude of block ferromagnetic metal is improved, the metal shielding effect is broken through to realize volume phase regulation and control, stable operation at room temperature is ensured, and the reversible magnetic thin film material has reversible and non-volatile operation characteristics; therefore, a way is laid for practicability of high-performance magnetic electronic devices.

The invention provides a magnetic thin film. The magnetic thin film comprises a substrate and a composite layer, the composite layer comprises a plurality of laminated magnetic layers and a plurality of insulated dielectric layers, and the plurality of magnetic layers and the plurality of dielectric layers are laminated and alternately arranged on one side of the substrate. The thickness of each magnetic layer ranges from 2 nm to 100 nm. And the thickness of each dielectric layer is 2 nm to 10 nm. The composite layer includes a plurality of cracks distributed aperiodically. At least part of the cracks extend in different directions along the cross section perpendicular to the lamination direction of the composite layer, and at least part of the cracks extend non-linearly along the cross section perpendicular to the lamination direction of the composite layer. The invention also provides an electronic device and a semiconductor packaging module applying the magnetic thin film, and a preparation method of the magnetic thin film. And the magnetic film is a wave-absorbing material with high magnetic conductivity in a radio frequency microwave frequency band. The magnetic thin film still has high magnetic conductivity and high resistivity under the condition that the thickness reaches the micron order.

The invention belongs to the technical field of soft magnetic high-entropy alloy materials and magnetron sputtering, and particularly relates to a nitrogen-doped high-entropy alloy film inductance material and a preparation method thereof.The high-entropy alloy components comprise B and / or Zr, Fe, Co and Ni elements, and the nitrogen-doped high-entropy alloy film inductance material is obtained through a magnetron sputtering method. The method specifically comprises the steps that in the sputtering process of the high-entropy alloy film, nitrogen with certain partial pressure is introduced, and the nitrogen element is deposited into the high-entropy alloy film and forms nitride with a high-entropy alloy element; the high resistivity characteristic of the material is improved, magnetic performance deterioration caused by introduction of a non-magnetic phase is weakened, meanwhile, the material has excellent magnetic performance, the performance of the film is regulated and controlled by controlling nitrogen partial pressure, nitrides of various different structures are formed, the regulation and control mode is more accurate, the nitrogen doping effect is more uniform, cost is reduced, and the preparation method is suitable for industrial production. The method is suitable for large-scale industrial production.

The present invention provides L10 type FeNi ordered alloy 5 that has a L10 type ordered structure and includes a transition metal element 2 of group 6 or group 7. Thus, the coercive force of L10 type FeNi ordered alloy 5 can be further increased.

To provide FeCo-based alloy and target material each having excellent corrosion resistance and sputtering property.SOLUTION: FeCo-based alloy for a soft magnetic layer includes TCR element and TAM element. The balance is Fe, Co and inevitable impurities. The content (at%) of each element satisfies formula (1) 0.1≤TCR≤10.0, formula (2) 11.0≤TAM≤25.0, formula (3) 16.0≤[TCR / 2+TAM]≤25.0, and formula (4) 0.20≤[Fe / (Fe+Co)]≤0.80. The FeCo-based alloy has microstructure that consisting of (Fe,CO) phases having Fe and / or Co as a main constituent, and intermetallic compound phases including TCR element or TAM element. In this microstructure, the number of (Fe,Co) phases in which the diameter of the minimum circumscribed circle surrounding the outside of the (Fe,Co) phase exceeds 30 μm is 0.SELECTED DRAWING: Figure 1

The invention discloses a Bi-YIG thick film / permanent magnet nanowire array composite material, and belongs to the technical field of magnetic materials and microwave devices. A Bi-YIG thick film with the thickness of 20-50 microns grows on the surface of a substrate in a tape casting mode through a tape casting method, meanwhile, a permanent magnet nanowire array with the thickness of 20-100 microns grows on the surface of the Bi-YIG thick film through an electrochemical technology by means of an anodic aluminum oxide template, and magnetization of the Bi-YIG thick film is achieved by means of the high magnetic flux density characteristic of the permanent magnet nanowire array. And a similar composite material with a self-biasing function is formed. The composite material can solve the problem that a traditional circulator needs to be bonded with a permanent magnet, and a new thought is provided for preparing a self-biased circulator.

The invention belongs to the technical field of metal magnetic thin films, and particularly relates to a semi-hard magnetic alloy thin film material, a preparation method and a magnetic grid device. The preparation method of the semi-hard magnetic alloy thin film material comprises the following steps that a base material is cleaned, then a FeCoCr thin film is deposited on the surface of the base material, a prepared-state FeCoCr thin film is obtained, then Al ion implantation is conducted on the prepared-state FeCoCr thin film, and then vacuum annealing is conducted; in the Al ion implantation process, the implantation energy ranges from 28 keV to 32 keV, and the bias voltage ranges from 450 V to 500 V; and the temperature of vacuum annealing is 540-560 DEG C. According to the preparation method of the specific semi-hard magnetic alloy thin film material, Al ions are injected into the FeCoCr thin film through a specific method, the amplitude modulation decomposition temperature of the thin film is reduced, then the FeCoCr thin film with high magnetic performance can be obtained only through low-temperature annealing treatment, and therefore the material defect caused by high-temperature machining in a traditional method is avoided.

The invention concerns a method for fabricating an array of magnets (10), the method comprising: - a step of deposition of a coercivity changing element according to a pattern on a first material having a first coercivity value, the coercivity changing element being adapted to change the coercivity of the first material, and - a step of diffusion of the coercivity changing element into certain regions to form a magnetic layer (16) having first areas (A1) made of the first material and second areas (A2) having a second coercivity, made of a second material comprising the first material and the coercivity changing element.

To reliably electrically connect the lead layer and protective film that covers a functional film even when the film thickness of the protective film is very small. After formation of a conductive protective film on the surface of a functional film, reverse sputtering is performed with a part of the surface of the protective film covered with a mask to physically reduce a native oxide film formed on a part of the surface of the protective film that is not covered with the mask. Thereafter, a lead layer is formed on a part of the surface of the protective film that is not covered with the mask. This can remove the native oxide film formed on the protective film without requiring etching. Thus, even when the film thickness of the protective film is very thin, it is possible to electrically connect the lead layer and protective film without damaging the functional film.