14results about "Cathode sputtering application" patented technology

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

A system for the fabrication of ε-phase MnAl / Co bilayer thin films, consisting of: a) a high-frequency magnetron sputtering system for the deposition of multilayer thin films on a silicon substrate, the sputtering system comprising: • a system for maintaining base pressure, configured to maintain a constant pressure; • three 2-inch targets consisting of MnAl, Co and Ta; and • a substrate rotation mechanism configured to rotate the substrate at a constant number of revolutions per minute; b) a layer deposition unit that is operationally connected to the RF magnetron sputtering system and enables the sputtering system to deposit layers sequentially: • a 3 nm thick Ta buffer layer on the silicon substrate; • a 60 nm thick MnAl layer on the Ta buffer layer; • a Co layer with a thickness of 1 nm to 5 nm on the MnAl layer; and • a 5 nm thick Ta top layer on the Co layer; c) an annealing furnace configured to anneal the deposited Ta and MnAl layers for 2 hours at 600 °C before the Co layer is deposited; and d) a characterization unit for analyzing the produced thin films, wherein the characterization unit comprises the following: • an X-ray diffraction (XRD) system for structural characterization; • an optical 3D profilometer for measuring surface structure and mean roughness; and • a field emission scanning electron microscope (FESEM) with energy-dispersive X-ray spectrometer (EDS) for analyzing surface morphology and elemental composition.

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

Provided are a sputtering target for a magnetic material, a sputtering target assembly for a magnetic material, and a method for producing a sputtering target for a magnetic material, with which peeling of a redeposited film can be satisfactorily suppressed. A sputtering target for a magnetic material, the sputtering target having a sputtering region and a non-sputtering region, the arithmetic mean curvature (Spc) of peaks on the surface of the non-sputtering region being 3200 mm-1 or more.

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

To provide FeCo-based alloy and target material each having excellent corrosion resistance and sputtering property.SOLUTION: FeCo-based alloy for a soft magnetic layer includes TCR element and TAM element. The balance is Fe, Co and inevitable impurities. The content (at%) of each element satisfies formula (1) 0.1≤TCR≤10.0, formula (2) 11.0≤TAM≤25.0, formula (3) 16.0≤[TCR / 2+TAM]≤25.0, and formula (4) 0.20≤[Fe / (Fe+Co)]≤0.80. The FeCo-based alloy has microstructure that consisting of (Fe,CO) phases having Fe and / or Co as a main constituent, and intermetallic compound phases including TCR element or TAM element. In this microstructure, the number of (Fe,Co) phases in which the diameter of the minimum circumscribed circle surrounding the outside of the (Fe,Co) phase exceeds 30 μm is 0.SELECTED DRAWING: Figure 1

The invention concerns a method for fabricating an array of magnets (10), the method comprising: - a step of deposition of a coercivity changing element according to a pattern on a first material having a first coercivity value, the coercivity changing element being adapted to change the coercivity of the first material, and - a step of diffusion of the coercivity changing element into certain regions to form a magnetic layer (16) having first areas (A1) made of the first material and second areas (A2) having a second coercivity, made of a second material comprising the first material and the coercivity changing element.

Provided are: a magnetic recording medium having a high magnetocrystalline anisotropy constant Ku and coercive force Hc; and a sputtering target used to produce this magnetic recording medium.　This Pt-oxide sputtering target is formed from 60 vol% or more but less than 100 vol% of a Pt-based alloy phase and more than 0 vol% but 40 vol% or less of an oxide, the Pt-oxide sputtering target being characterized in that the Pt-based alloy phase contains 50 to 100 at% of Pt.

To provide a new multilayer thin film exhibiting a tunnel magnetoresistance effect.SOLUTION: The present invention is a multilayer thin film having an insulating layer and a magnetic layer sandwiching the insulating layer. At least one of the magnetic layers is made of a Co-based alloy containing Al and / or Ga. For example, Co is contained in an amount of 58.5 to 63 at% with respect to the entire Co-based alloy. The Co-based alloy constituting a magnetic layer may be a β phase. The insulating layer is, for example, MgO or MgAl2O4. The magnetic layer on the other side of the insulating layer may be CoFeB (alloy) in addition to CoAl. Each layer is formed by sputtering, and planarization, crystallization, and the like are performed by heat treatment. A magnetic tunnel junction (MTJ) having the multilayer thin film of the present invention exhibits a high magnetoresistance change ratio (MR ratio), and can be applied to a next-generation magnetoresistance memory (MRAM) or the like.SELECTED DRAWING: Figure 3

The present invention provides a sputtering target which enables a magnetic layer of a magnetic recording medium to maintain high coercivity, while being capable of improving magnetic separation between magnetic particles. This sputtering target contains Co and Pt as metal components, while containing NbO2 as a metal oxide component. Alternatively, this sputtering target contains Co and Pt as metal components, while having a phase that contains all of Co, Nb and O.

A multi-layered magnetic film, comprising: a substrate; a first magnetic layer arranged on the substrate, wherein the first magnetic layer is Fe (50-80) N (10-20 )B (1-20) M (0-10) includes, where M is Si, Ta, Zr, Ti, Co or a combination thereof; and a second magnetic layer arranged on top of the first magnetic layer, where the second magnetic layer is Fe (50-90) N (10-50) or Fe (60-90) N (1-10 )Ta (5-30) includes; the multilayer magnetic foil exhibits a frequency range of 1 to 5 GHz, a magnetic permeability of greater than or equal to 1800, preferably greater than or equal to 2000, particularly preferably greater than or equal to 3000 over a selected frequency band in the frequency range, preferably over a frequency band of 1 to 10 GHz; a magnetic loss tangent of less than or equal to 0.3, preferably less than or equal to 0.1, over a selected frequency band in the frequency range, preferably over a frequency band from 1 to 10 GHz; and a cutoff frequency greater than or equal to 1 GHz, or greater than or equal to 2 GHz, preferably greater than or equal to 5 GHz.

In one embodiment of the present invention, a metallic magnetic thin film is provided, comprising a plurality of columnar structures having an amorphous phase and whose long sides extend in the thickness direction. The columnar structures include a main body portion and a sidewall portion continuous with the main body portion. The columnar structures contain Fe, Co, Si and B. In the sidewall portions, the total amount of Fe and Co is greater than the total amount of Si and B when converted in atomic percentage concentration.

A method for obtaining chiral coupling in ferrimagnetic alloy belongs to the technical field of new materials, and comprises the following steps: 1) a step of depositing tantalum Ta as a seed layer on a Si / SiO2 substrate by using a direct current magnetron sputtering technology; 2) on the basis of the step 1), a step of depositing platinum Pt as a heavy metal layer on the Ta by using the direct current magnetron sputtering technology; 3) on the basis of the step 2), a step of preparing a TM-RE ferrimagnetic alloy on a multilayer film by using a method of direct current co-sputtering of a magnetic transition metal or alloy TM and a rare earth metal RE; 4) on the basis of the step 3), a step of depositing Ta as a cover layer on the multilayer film by using the direct current magnetron sputtering technology, so as to finally obtain a ferrimagnetic multilayer film; and 5) chiral coupling magnetic structure is constructed by using gallium ion irradiation to change magnetic anisotropy of the ferrimagnetic multilayer film. The chiral coupling can be used to construct a race track memory based on the ferrimagnetic, and the race track memory is expected to show a lower power consumption application potential than a traditional ferromagnetic system in a new type of calculation.

The present invention realizes a translucent magnetic material having excellent optical characteristics. The translucent magnetic material is provided with: a plurality of magnetic particles including a plurality of FeCo particles; and a light-transmitting material in which the plurality of magnetic particles are dispersed, the light-transmitting material comprising: a ceramic material containing a compound of fluorine and at least one element selected from group III, group IV, and group V; and a metal material located in a region between the plurality of FeCo particles and the ceramic material.