A semi-hard magnetic alloy film material, preparation method and magnetic grid device

Abstract

The present application belongs to the technical field of metal magnetic films, and specifically relates to a semi-hard magnetic alloy film material, a preparation method and a magnetic grating device. The preparation method of the semi-hard magnetic alloy film material provided in the present application comprises the following steps: cleaning the substrate, then depositing a FeCoCr film on the surface of the substrate to obtain a prepared FeCoCr film, then performing Al ion implantation on the prepared FeCoCr film, and then performing vacuum annealing; in the Al ion implantation, the implantation energy is 28 keV-32 keV, and the bias voltage is 450 V-500 V; the vacuum annealing temperature is 540℃-560℃. In the preparation method of the specific semi-hard magnetic alloy film material provided in the present application, Al ions are implanted into the FeCoCr film by a specific method, so that the amplitude modulation decomposition temperature of the film is reduced, and then only a relatively low temperature annealing treatment is required to obtain a FeCoCr film with high magnetic properties, thereby avoiding material defects caused by high-temperature processing in traditional methods.

Description

Technical Field

[0001] The present application belongs to the technical field of metal magnetic films, and specifically relates to a semi-hard magnetic alloy film material, a preparation method and a magnetic grid device. Background Art

[0002] Magnetoresistive magnetic grating devices are sensing components that convert changing magnetic signals into changes in resistance based on the magnetoresistance effect, thereby detecting information such as position and angle. They are widely used in robotics, CNC machine tools, automobiles, medical equipment, and other fields. They are mainly composed of magnetic sensors, magnetic gratings, and signal processing circuits. Among them, the uniformity of the NS magnetic poles on the magnetic grating and the size of the residual magnetism are the key factors that determine the signal output quality and device accuracy of the device. In practical applications, excessive coercive force of magnetic grating materials will increase the difficulty of writing NS magnetic signals; while excessive residual magnetism will result in weak signals that are difficult to be detected by sensors. Therefore, semi-hard magnetic alloy materials are usually used as magnetic grating devices, which can combine the coercive force and residual magnetism characteristics of bulk materials to meet the application requirements of magnetic grating devices.

[0003] Currently, there is still significant room for improvement in magnetic grating manufacturing processes and costs. Furthermore, with the advancement of device miniaturization and integration, the radius of the magnetic grating is shrinking, leading to more pronounced material stress concentration. The reliability and performance stability of small-scale magnetic grating materials are crucial, especially under high-speed operation. Conventional preparation methods require a high annealing temperature (approximately 650°C) to achieve usable performance. Furthermore, differences in thermal expansion coefficients, volume shrinkage during phase transitions, and grain growth during high-temperature heat treatment often generate stress within the film. Areas of significant grating curvature can result in uneven coating thickness (edge ​​effects), and even lead to film shedding due to stress concentration, resulting in device failure and significant losses. Therefore, reducing the heat treatment temperature while maintaining reliability and stability in application remains a key issue in this materials field. Summary of the Invention

[0004] The purpose of this application is to address the deficiencies of the prior art and provide a semi-hard magnetic alloy thin film material, a preparation method, and a magnetic grid device, specifically adopting the following technical solutions:

[0005] First, the present application provides a method for preparing a semi-hard magnetic alloy thin film material, comprising the following steps: cleaning a substrate to obtain a pretreated substrate, then depositing a FeCoCr film on the surface of the pretreated substrate to obtain a prepared FeCoCr film, then performing Al ion implantation on the prepared FeCoCr film, and then performing vacuum annealing; during the Al ion implantation process, the injection energy is 28 keV - 32 keV, and the bias voltage is 450 V - 500 V; the vacuum annealing temperature is 540 ℃ -560 ℃.

[0006] In the traditional method for preparing FeCoCr thin films, the temperature required for the spinodal decomposition of the α-FeCoCr phase to produce the FeCo-rich hard magnetic phase and the Cr-rich soft magnetic phase is about 650°C, which makes the properties of the material easily degraded due to the high processing temperature during the preparation of the FeCoCr film by the traditional method. In the preparation method of the semi-hard magnetic alloy film material provided in the present application, Al ion implantation is carried out under specific conditions, so that Al atoms with an atomic radius of 1.43 Å are implanted into Fe, Co, and Cr with atomic radii of 1.24 Å, 1.25 Å, and 1.28 Å, respectively, and then, under the control of specific energy and voltage, a specific atomic size mismatch is generated, thereby appropriately enhancing the interaction between atoms while increasing the specific lattice distortion, improving the self-diffusion activation energy of the FeCoCr film, and thereby reducing the temperature required for the phase difference between the FeCo-rich hard magnetic phase and the Cr-rich soft magnetic phase produced by the spinodal decomposition of the α-FeCoCr phase, that is, reducing the spinodal decomposition temperature, thereby significantly reducing the processing temperature.

[0007] In some specific implementations, the substrate includes a silicon substrate or a glass wafer.

[0008] In some specific implementations, the step of depositing an FeCoCr film includes magnetron sputtering a pretreated substrate using an FeCoCr alloy target, wherein the Fe:Co:Cr ratio in the FeCoCr alloy target is (40% - 50%): (25% - 35%): (20% - 30%), by mass. The magnetron sputtering rate is 0.03 nm / s - 0.07 nm / s; the magnetron sputtering power is 80 W - 120 W, and the thickness of the as-prepared FeCoCr film is 40 nm - 60 nm. By using a specific FeCoCr alloy target, under specific magnetron sputtering rate and specific magnetron sputtering power conditions, an FeCoCr film of a specific thickness is deposited. The as-prepared FeCoCr film can facilitate subsequent Al ion implantation, thereby forming a synergistic effect with the subsequent Al ion implantation, resulting in a superior technical effect.

[0009] In some specific implementations, during Al ion implantation, the implantation dose is 2×10 11 ions / cm 2 - 2×10 13 ions / cm 2 In some specific cases, better technical effects can be achieved by implanting a specific dose of Al ions.

[0010] Preferably, the preparation method of the semi-hard magnetic alloy thin film material provided in the present application comprises the following steps: cleaning a silicon substrate to obtain a pretreated silicon substrate, then depositing a FeCoCr thin film on the surface of the pretreated silicon substrate by magnetron sputtering using a FeCoCr alloy target at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s to obtain a 50 nm thick prepared FeCoCr thin film, then performing Al ion implantation on the prepared FeCoCr thin film, and then performing vacuum annealing;

[0011] In terms of mass fraction, the Fe:Co:Cr ratio in the FeCoCr alloy target is 45%:30%:25%. During the Al ion implantation, the implantation energy is 30 keV, the bias voltage is 489 V, and the implantation dose is 2×10 12 ions / cm 2 ; The vacuum annealing temperature is 550 ℃ and the vacuum annealing time is 60 min.

[0012] Secondly, the present application also provides a semi-hard magnetic alloy thin film material prepared using the above-mentioned preparation method.

[0013] Finally, the present application also provides a magnetic grating device comprising the above-mentioned semi-hard magnetic alloy thin film material.

[0014] The beneficial effects of the present application are as follows: the present application provides a method for preparing a semi-hard magnetic alloy thin film material, in which Al ions are injected into the FeCoCr film by a specific method, so that the amplitude modulation decomposition temperature of the film is reduced, and thus only a relatively low temperature annealing treatment is required to obtain a FeCoCr film with high magnetic properties, thereby avoiding material defects caused by high-temperature processing in traditional methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of Al ion implantation into FeCoCr in Example 1 (A in the figure represents Al ion implantation into FeCoCr, and B represents Al ion diffusion in FeCoCr);

[0016] Figure 2 Shown is the MH curve of the FeCoCr film as prepared in Example 1;

[0017] Figure 3Shown is the MH curve of the FeCoCr film after annealing at 550°C for 60 minutes in Example 1. DETAILED DESCRIPTION

[0018] The following will clearly and completely describe the concept and technical effects of this application in conjunction with the embodiments and drawings to fully understand the purpose, scheme and effects of this application. It should be noted that the embodiments and features in the embodiments of this application can be combined with each other unless there is a conflict.

[0019] Example 1

[0020] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0021] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0022] like Figure 1As shown, A is a schematic diagram of an Al ion-implanted FeCoCr film, and B is a FeCoCr film processed by Al ion implantation and then vacuum annealing at 550°C for 60 min as provided in this embodiment. In the sample prepared by the above method, the Al ions implanted by the specific method provided in this application diffuse in the FeCoCr layer, resulting in an increase in specific body defects within the FeCoCr layer. As body defects increase, a higher density of grain boundaries is formed, thereby pinning the magnetic domain walls. The pinning effect of the domain walls becomes more obvious, thereby improving the coercive force. In addition, in the method for preparing this semi-hard magnetic alloy film provided in this application, a quantitative Al ion dose is precisely introduced into the FeCoCr layer by ion implantation, thereby precisely controlling the defects within the sample body.

[0023] like Figure 2 and Figure 3 As shown, in the preparation method of a semi-hard magnetic alloy film provided in the present application, the coercive force of the prepared FeCoCr film sample before ion implantation is only 20 Oe. After the specific Al ion implantation process provided in the present application and then heat treatment at a relatively low temperature, the coercive force of the film can reach more than 400 Oe, and the remanence reaches 10228 Oe. This shows that the preparation method of a semi-hard magnetic alloy film provided in the present application not only enables the FeCoCr film to have a relatively excellent coercive force, but also maintains a relatively high remanence level.

[0024] Example 2

[0025] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0026] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 80 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, the as-prepared FeCoCr film with a thickness of 50 nm was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10-5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0027] Example 3

[0028] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0029] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, the as-prepared FeCoCr film with a thickness of 50 nm was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 28 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0030] Example 4

[0031] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0032] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5Pa, argon pressure 3mtorr, after completing magnetron sputtering, the as-prepared FeCoCr film with a thickness of 50 nm was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 32 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0033] Example 5

[0034] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0035] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 455 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0036] Example 6

[0037] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0038] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 495 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0039] Example 7

[0040] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0041] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 11 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0042] Example 8

[0043] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0044] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 13 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0045] Example 9

[0046] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0047] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.04 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0048] Example 10

[0049] First, in this embodiment, a semi-hard magnetic alloy film is provided, and a preparation method thereof specifically includes the following steps:

[0050] At room temperature, the silicon substrate was ultrasonically cleaned in acetone, deionized water, and anhydrous ethanol in sequence. The silicon substrate was ultrasonically cleaned in each solution for 20 min using an ultrasonic cleaning machine and dried after cleaning. Then, a FeCoCr thin film was deposited on the surface of the silicon substrate using a magnetron sputtering system using a FeCoCr alloy target (Fe:Co:Cr = 45%:30%:25%, wt%) at a sputtering power of 100 W and a sputtering rate of 0.06 nm / s. During the magnetron sputtering process, the background vacuum of the system was 3×10 -5 Pa, argon pressure 3mtorr, after completing magnetron sputtering, a 50 nm thick as-prepared FeCoCr film was obtained. Subsequently, Al ion implantation was performed on the as-prepared FeCoCr film with an implantation energy of 30 keV, a bias voltage of 489 V, and an implantation dose of 2×10 12 ions / cm 2 After the ion implantation is completed, 5×10 -5 Vacuum annealing was performed at 550° C. for 60 min under a vacuum degree of 0.05 Pa to obtain the semi-hard magnetic alloy film provided in this embodiment.

[0051] The magnetic properties of the semi-hard magnetic alloy films prepared in Examples 1-10 were tested using a conventional VSM (vibrating sample magnetometer). The coercive force and remanence of the semi-hard magnetic alloy films in Examples 1-10 were measured at room temperature. The test results are shown in Table 1:

[0052]

[0053] Although the description of the present application has been quite detailed and specifically describes several embodiments, it is not intended to be limited to any of these details or embodiments or any particular embodiment, but should be regarded as providing a broad possible interpretation of these claims by reference to the appended claims in view of the prior art, thereby effectively covering the intended scope of the present application. In addition, the above description of the present application is based on the embodiments foreseeable by the applicant, which is intended to provide a useful description, and those non-substantial changes to the present application that have not yet been foreseen may still represent equivalent changes to the present application.

Claims

1. A method for preparing a semi-hard magnetic alloy thin film material, characterized in that: The following steps are involved: The substrate is cleaned to obtain a pretreated substrate, and then a FeCoCr film is deposited on the surface of the pretreated substrate to obtain an as-prepared FeCoCr film. The as-prepared FeCoCr film is then implanted with Al ions, followed by vacuum annealing. During the Al ion implantation, the implantation energy is 28 keV to 32 keV, and the bias voltage is 450 V to 500 V. The vacuum annealing temperature is 540°C to 560°C.

2. The method for preparing a semi-hard magnetic alloy thin film material according to claim 1, characterized in that: The substrate includes a silicon substrate or a glass substrate.

3. The method for preparing a semi-hard magnetic alloy thin film material according to claim 1, characterized in that: The step of depositing the FeCoCr film includes: performing magnetron sputtering on the pretreated substrate using a FeCoCr alloy target, wherein the FeCoCr alloy target has a mass percentage of Fe:Co:Cr=(44%-46%):(29%-31%):(24%-26%).

4. The method for preparing a semi-hard magnetic alloy thin film material according to claim 3, characterized in that: The magnetron sputtering rate is 0.03 nm / s-0.07 nm / s.

5. The method for preparing a semi-hard magnetic alloy thin film material according to claim 3, characterized in that: The sputtering power of the magnetron sputtering is 80 W to 120 W.

6. The method for preparing a semi-hard magnetic alloy thin film material according to claim 1, characterized in that: During the Al ion implantation, the implantation dose is 2×10 11 ions / cm 2 - 2×10 13 ions / cm 2 .

7. The method for preparing a semi-hard magnetic alloy thin film material according to claim 1, characterized in that: The thickness of the prepared FeCoCr film is 40 nm to 60 nm.

8. The method for preparing a semi-hard magnetic alloy thin film material according to any one of claims 1 to 7, characterized in that: The following steps are involved: The silicon substrate is cleaned to obtain a pretreated silicon substrate, and then a FeCoCr film is deposited on the surface of the pretreated silicon substrate by magnetron sputtering using a FeCoCr alloy target at a sputtering power of 100 W and a sputtering rate of 0.05 nm / s to obtain a 50 nm thick as-prepared FeCoCr film, and then Al ions are implanted into the as-prepared FeCoCr film, followed by vacuum annealing; In terms of mass fraction, the Fe:Co:Cr ratio in the FeCoCr alloy target is 45%:30%:25%. During the Al ion implantation, the implantation energy is 30 keV, the bias voltage is 489 V, and the implantation dose is 2×10 12 ions / cm 2 ; The vacuum annealing temperature is 550 ℃, and the vacuum annealing time is 60 min.

9. A semi-hard magnetic alloy thin film material, characterized in that: The semi-hard magnetic alloy thin film material is prepared by the preparation method of any one of claims 1 to 8.

10. A magnetic grating device, characterized in that: The semi-hard magnetic alloy thin film material according to claim 9 is included.

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