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Variable inductor type mems pressure sensor using magnetostrictive effect

A pressure sensor and magnetostrictive technology, applied in magnetostrictive devices, material selection for magnetostrictive devices, manufacture/assembly of magnetostrictive devices, etc. Problems such as large shape

Inactive Publication Date: 2008-04-09
MDT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general shape of the coil is too large to be applied to microsensors, and although it can be fabricated with a MEMS structure, it requires difficult processing, so this method is not practical

Method used

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  • Variable inductor type mems pressure sensor using magnetostrictive effect
  • Variable inductor type mems pressure sensor using magnetostrictive effect
  • Variable inductor type mems pressure sensor using magnetostrictive effect

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Embodiment Construction

[0019] The present invention will be described in detail with reference to the accompanying drawings.

[0020] FIG. 1 is a plan view showing a variable inductance MEMS pressure sensor utilizing a magnetostrictive effect according to an embodiment of the present invention.

[0021] In an embodiment, a variable inductance MEMS pressure sensor utilizing a magnetostrictive effect includes an inductance array unit 100 and a capacitance unit 200, which form an LC resonance circuit.

[0022] The magnetic permeability of the thin film of the magnetostrictive material is changed based on the pressure applied from the outside, and the inductance array unit 100 senses the change of the thin film of the magnetostrictive material, thereby changing the inductance of the sensor. The inductor array unit 100 includes a plurality of unit elements 130 . Each unit element 130 includes a ring coil electrode 110 and a thin film 120 of a magnetostrictive material corresponding to the ring coil elec...

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PUM

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Abstract

A variable inductor type MEMS pressure sensor using a magnetostrictive effect comprises an inductor array unit and a capacitor unit. The inductor array unit includes a coil unit having a plurality of serially connected circular electrodes formed on a first substrate and a magnetostrictive material thin film corresponding one by one to the circular electrode formed on a second substrate opposite to the first substrate at a predetermined distance in parallel to form an inductor which has the magnetostrictive material thin film as a core of the coil unit for inducing change of magnetic permeability of the magnetostrictive thin film depending on external pressure to vary inductance of the inductor. The capacitor unit constitutes a LC resonant circuit with the inductor array unit to convert magnetic energy discharged in the inductor array unit into a voltage. The variable inductor type MEMS pressure sensor has an excellent resolution because it is more sensitive than a conventional piezoresistive or capacitance sensor, and is manufactured using a MEMS process technology exchangeable with a semiconductor process, thereby enabling miniaturization and a mass package process to reduce the cost of production.

Description

technical field [0001] The present invention relates generally to a pressure sensor, and more particularly to a pressure sensor obtained by realizing a variable inductance type pressure sensor having a magnetostrictive material utilizing the magnetostrictive effect As a magnetic core, this means that the magnetic permeability is significantly changed based on externally applied pressure by microelectromechanical system (hereafter referred to as “MEMS”) technology. Background technique [0002] As a recently commercialized pressure sensor, a semiconductor pressure sensor does not have hysteresis, that is, a characteristic curve when pressure is applied differs from a characteristic curve when pressure is decreased, and has excellent linearity. Also, even a miniaturized and lightweight semiconductor pressure sensor is very robust against vibration. In addition, semiconductor pressure sensors have high sensitivity and reliability compared to mechanical sensors, as well as exce...

Claims

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Application Information

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IPC IPC(8): G01L1/12B81B3/00G01L5/00G01L9/16H01L41/08H01L41/12H01L41/20H01L41/22H01L41/47
CPCG01L1/14G01L1/12
Inventor 崔范圭吴哉根
Owner MDT CORP
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