Non mask preparation method based on thin film multiple layer film nano magnetic electron device

A technology for electronic devices and multilayer films, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, the manufacture/assembly of magnetostrictive devices, and the manufacture/processing of electromagnetic devices, etc. Complex, unsuitable for single-piece, small batch production and other problems, to achieve the effect of simple method and high efficiency

Inactive Publication Date: 2008-03-12
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the need for prefabricated masks in the existing photolithography, electron beam lithography, ion beam etching and chemical reaction etching technologies, the process is complex, the production cycle is long, and it is no...

Method used

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  • Non mask preparation method based on thin film multiple layer film nano magnetic electron device
  • Non mask preparation method based on thin film multiple layer film nano magnetic electron device
  • Non mask preparation method based on thin film multiple layer film nano magnetic electron device

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Embodiment 1, preparation of magnetoelectronic devices based on Pt / Co magnetic recording multilayer film by maskless method

[0022] Pt(2.8nm) / [Pt(0.6nm) / Co(0.3nm)] was sequentially deposited on a 1mm thick single crystal silicon substrate cleaned by conventional methods using high-vacuum magnetron sputtering equipment 6 / Pt (6.5nm). The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 7×10 -2 Pa; sputtering power: 120W; sample holder rotation rate: 20rpm; growth temperature: room temperature; growth rate: 0.03-0.12nm / s. The deposited magnetic multilayer film is micro-nano-processed using a focused ion beam workstation, and the dose of gallium ion irradiation is 1×10 13 ~5×10 14 ions / cm 2 , Gallium ions are vertically incident on the surface of the magnetic film, the ion beam energy is 30keV, and the ion beam current is 1nA. First, the control program of the ion beam and ...

Embodiment 2

[0023] Embodiment 2, preparation of magnetic electronic devices based on CoFe ferromagnetic thin film by maskless method

[0024] A lower buffer layer Ta with a thickness of 5 nm, a CoFe ferromagnetic layer with a thickness of 10 nm and a protective layer Ta with a thickness of 10 nm were deposited on a 1 mm thick single crystal silicon substrate cleaned by a conventional method using a high vacuum magnetron sputtering device. The growth conditions of the above-mentioned magnetic film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 7×10 -2 Pa; sputtering power: 120W; sample holder rotation rate: 20rpm; growth temperature: room temperature; The deposited magnetic thin film is micro-nano-fabricated using a focused ion beam workstation, and the dose of gallium ion irradiation is 1×10 14 ~1×10 15 ions / cm 2, Gallium ions are vertically incident on the surface of the magnetic film, the ion beam energy is 30keV, and the ion beam current is 1nA. First...

Embodiment 3

[0025] Embodiment 3, the magnetic electronic device based on FeNi ferromagnetic thin film is prepared by maskless method

[0026] A lower buffer layer Ta with a thickness of 5nm, a FeNi ferromagnetic layer with a thickness of 10nm and a protective layer Ta with a thickness of 10nm were deposited on a 1mm thick single crystal silicon substrate cleaned by a conventional method using high vacuum magnetron sputtering equipment. The growth conditions of the above-mentioned magnetic film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 7×10 -2 Pa; sputtering power: 120W; sample holder rotation rate: 20rpm; growth temperature: room temperature; The deposited magnetic thin film is micro-nano-processed using a focused ion beam workstation, and the dose of ion irradiation is 1×10 14 ~1×10 15 ions / cm 2 , the ion beam energy is 30keV, and the ion beam current is 1nA. First, upload the control program of the ion beam and the sample stage on the focused ion ...

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Abstract

A preparation method for maskless based on membrane or multi-membrane namometer magneto-electronic device is belongs to magneto-electronic device fabrication technique field. It is characterized in following procedures: first, depositing magnetism device matrix in order of underlay, cushion breaker, magnetic layer and covering layer; when deposit magnetic layer, 50-5000e plane abducting magnetic field should be added or magnetic field heat processing should be carried out after the deposition if needed; second, using focus gallium ion workstation as processing equipment to make maskless ion irradiation processing; third, the ion irradiation parameter is: dosage of ion irradiation is 1 is multipled by 10<>13<> swung dash 1 is multipled by 10<>18<>ions/cm<>2<>, ion beam energy is 20 to 30keV, ion beam stream is 100pA to 5nA; fourth, using focus gallium ion workstation to deposit needed electrode around magnetic membrane device. The method is characterized in dispense with preparation mask, easy to carry out and high efficiency.

Description

Technical field [0001] The invention relates to a maskless preparation method based on thin-film / multilayer-film nano-magnetic electronic devices, and belongs to the technical field of magnetic electronic device manufacturing. Background technique [0002] Since 1988, giant magneto-impedance materials whose AC impedance changes with the external magnetic field, giant magneto-resistance materials whose resistivity changes with the external magnetic field, and giant magnetostrictive materials whose geometric size changes with the external magnetic field have appeared. A new concept of magnetoelectronic devices. Magnetoresistive sensors based on multilayer giant magnetoresistance materials and spin tunnel junction magnetoresistance materials have greater magnetoresistance effect, higher sensitivity and signal-to-noise ratio than the currently widely used anisotropic magnetoresistance material sensors. The scope is wider and can be widely used in information technology, vehicle...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L41/22H01L41/47
Inventor 王寅岗李子全周广宏
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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