The invention relates to a chemical method for preparing a nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ. The method comprises the following steps that: an ITO conductive glass substrate material with a nano indium-zinc alloy surface, monomer sulfur powder and anhydrous ethanol are put into a PTFE reactor, with the concentration of monomer sulfur powder of 0.001 to 0.015g sulfur/ml anhydrous ethanol, react for 12 to 24h at 160 to 180DEG C, are naturally cooled to room temperature after the reaction is completed; and finally, the product is sequentially cleaned by deionized water and anhydrous ethanol, naturally dried at room temperature, and the mesh-like ZnIn2S4 ternary compound optoelectronic film which comprises nano sheets is prepared on the indium-zinc alloy surface of an ITO conductive glass substrate in situ, wherein the thickness of the nano sheets is 20 to 30mm. The film prepared by the method is transparent, the nano mesh-like structure has uniform and perfect appearance, and the surface is very uniform and flat. Simultaneously, the method has the advantages of good low-temperature in situ growth repeatability, convenient operation, no further post-treatment, environmental-friendliness and convenience for industrial production.