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Chemical method for preparing nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ

A ternary compound, photoelectric thin film technology, applied in the field of material chemistry, can solve the problems of harsh reaction conditions, high substrate temperature, unsatisfactory morphology, etc., to achieve the effect of simple operation, transparent film, and solving the effect of non-uniform crystal film

Inactive Publication Date: 2010-08-18
XUCHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention is aimed at the ZnIn prepared at present 2 S 4 Nanocrystalline materials are mostly powdery products, which cannot be directly used in solar cell devices as photoelectric materials; the existing preparation ZnIn 2 S 4 In the method of thin film materials, there are disadvantages such as high substrate temperature, complicated process, harsh reaction conditions and unsatisfactory morphology.

Method used

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  • Chemical method for preparing nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ
  • Chemical method for preparing nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ
  • Chemical method for preparing nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Preparation: Clean the ITO conductive glass coated with an indium-zinc alloy film with a thickness of about 20nm in an ultrasonic cleaner for 5 minutes with deionized water and absolute ethanol in turn, then take it out and put it on filter paper to dry naturally ; Wash the polytetrafluoroethylene liner of the reaction kettle with tap water and distilled water successively, and dry it for later use;

[0030] (2) Reaction steps: put the treated ITO conductive glass substrate with nano-indium-zinc alloy surface into the polytetrafluoroethylene liner, add sulfur powder, then add absolute ethanol solvent to the height of 75% of the container, sulfur powder The concentration is 0.001 g / ml, the polytetrafluoroethylene liner is put into a stainless steel jacket and placed in a constant temperature blast drying oven with a temperature programming function, and the temperature is raised to 180 ° C for 24 hours;

[0031] (3) Post-treatment: After the reaction, the constant te...

Embodiment 2

[0033] (1) Preparation: Clean the ITO conductive glass coated with an indium-zinc alloy film with a thickness of about 80nm in an ultrasonic cleaner for 5 minutes with deionized water and absolute ethanol in sequence, then take it out and put it on filter paper to dry naturally ; Wash the polytetrafluoroethylene liner of the reaction kettle with tap water and distilled water successively, and dry it for later use;

[0034] (2) Reaction steps: put the treated ITO conductive glass substrate with nano-indium-zinc alloy surface into the polytetrafluoroethylene liner, add sulfur powder, then add absolute ethanol solvent to the height of 75% of the container, sulfur powder The concentration is 0.0015 g / ml, the polytetrafluoroethylene liner is put into a stainless steel jacket and placed in a constant temperature blast drying oven with a temperature programming function, and the temperature is raised to 180 ° C for 12 hours;

[0035] (3) Post-treatment: After the reaction is over, cl...

Embodiment 3

[0037] (1) preparatory work: with embodiment 2;

[0038] (2) Reaction steps: put the treated ITO conductive glass substrate with nano-indium-zinc alloy surface into the polytetrafluoroethylene liner, add sulfur powder, then add absolute ethanol solvent to the height of 75% of the container, sulfur powder The concentration is 0.0015 g / ml, the polytetrafluoroethylene liner is put into a stainless steel jacket and placed in a constant temperature blast drying oven with a temperature programming function, and the temperature is raised to 160 ° C for 24 hours;

[0039] (3) Post-treatment: After the reaction is over, close the constant temperature blast drying oven and cool to room temperature naturally. After cleaning the product with deionized water and absolute ethanol in turn, place the sample at room temperature to dry naturally; the obtained sulfur indium The zinc film sample was carefully transferred into a sample bottle and stored in a dark and dry environment. The color of...

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Abstract

The invention relates to a chemical method for preparing a nano mesh-like sulfur-indium-zinc ternary compound optoelectronic film on ITO conductive glass in situ. The method comprises the following steps that: an ITO conductive glass substrate material with a nano indium-zinc alloy surface, monomer sulfur powder and anhydrous ethanol are put into a PTFE reactor, with the concentration of monomer sulfur powder of 0.001 to 0.015g sulfur / ml anhydrous ethanol, react for 12 to 24h at 160 to 180DEG C, are naturally cooled to room temperature after the reaction is completed; and finally, the product is sequentially cleaned by deionized water and anhydrous ethanol, naturally dried at room temperature, and the mesh-like ZnIn2S4 ternary compound optoelectronic film which comprises nano sheets is prepared on the indium-zinc alloy surface of an ITO conductive glass substrate in situ, wherein the thickness of the nano sheets is 20 to 30mm. The film prepared by the method is transparent, the nano mesh-like structure has uniform and perfect appearance, and the surface is very uniform and flat. Simultaneously, the method has the advantages of good low-temperature in situ growth repeatability, convenient operation, no further post-treatment, environmental-friendliness and convenience for industrial production.

Description

Technical field: [0001] The invention belongs to the technical field of material chemistry, and in particular relates to a chemical method for in-situ preparation of a net-shaped sulfur-indium-zinc ternary compound photoelectric thin film material composed of nano flakes on an ITO conductive glass substrate. Background technique: [0002] Zn 2 S 4 (ZIS) as II-III-VI compound semiconductor, belongs to AB 2 C 4 series of ternary sulfides. Because of its moderate bandgap energy, high conversion efficiency, and low manufacturing cost, it is widely used in solar cells, photocatalysis, photoluminescent diodes, biomarkers, and photosensitive elements. [0003] At present, on the sulfur indium zinc (ZnIn 2 S 4 ) crystal preparation methods have been many reports, Nankai University Gou Xinglong et al [X.L.Gou, F.Y.Cheng, Y.H.Shi, L.Zhang, S.J.Peng, J.Chen, P.W.Shen.J.Am.Chem.Soc. 128,7222-7229.] With zinc sulfate (ZnSO 4 ), indium chloride (InCl 3 ) and thioacetamide (TAA) a...

Claims

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Application Information

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IPC IPC(8): C03C17/36
Inventor 郑直贾会敏何伟伟赵红晓李品将雷岩李大鹏杨风岭
Owner XUCHANG UNIV
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