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136 results about "Quaternary compound" patented technology

In chemistry, a quaternary compound is or has a cation consisting of a central positively charged atom with four substituents, especially organic (alkyl and aryl) groups, discounting hydrogen atoms. The best-known quaternary compounds are quaternary ammonium salts, having a nitrogen atom at the centre. For example, in the following reaction, the nitrogen atom is said to be quaternized as it has gone from 3 to 4 substituents: R₃N+RCl⟶R₄N⁺ Cl⁻ Other examples include substituted phosphonium salts (R₄P⁺), substituted arsonium salts (R₄As⁺) like arsenobetaine, as well as some arsenic-containing superconductors.

Method for synthesizing mono-dispersed multicomponent compound nanocrystals

The invention relates to a method for preparing a compound nanocrystal material for a solar cell, in particular to a novel method for synthesizing mono-dispersed multicomponent compound nanocrystals. The method can be typically applied to synthesis of chalcopyrite compounds, and comprises the following steps of: quickly injecting an oil phase solution containing a sulfur source into 180-280DEG C alcohol phase solution containing a metal source, reacting for 2 to 60 minutes, naturally cooling, and washing to obtain oil soluble multicomponent compound nanocrystal particles with narrow particle size distribution. The invention provides a two phase process for synthesizing the multicomponent compound nanocrystals for the first time. Expensive and toxic organic metals are not needed to be used in the method; and common inorganic metal salt is taken as the metal source, the reaction steps are simplified, the reaction time is greatly shortened, the production cost is reduced and the pollution is lightened, so that the method is an environment-friendly method with universality. Through the method, binary compounds, tertiary compounds, quaternary compounds and even penta-compounds can be synthesized.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

BeZnOS compound semiconductor material as well as preparation method and application thereof

The invention belongs to the technical field of semiconductor optoelectronic materials, and in particular relates to a BeZnOS compound semiconductor material, its preparation method and application. The BeZnOS material provided by the present invention is a quaternary compound semiconductor material obtained by solid solution of BeO and ZnS in a certain proportion. Through the synergistic effect of compound substitution of Be and S, not only can the bandgap of ZnO be adjusted more freely, but also play a role Increase the solubility of the substituting elements Be and S in ZnO and eliminate the effect of mutual restraint between the band gap of the solid solution and the adjustment of the lattice constant. The BeZnOS quaternary compound is a wide bandgap semiconductor with freely adjustable bandgap, and can be used for light-emitting devices or photodetection devices in ultraviolet to solar blind regions. The BeZnOS compound semiconductor material provided by the invention can be grown by various methods such as pulse laser deposition, magnetron sputtering, electron beam evaporation, etc., and the equipment and operation process are simple. The BeZnOS single crystal thin film material provided by the invention is successfully synthesized for the first time in the world, and has very important significance for the development of ZnO-based optoelectronic devices with adjustable wavelength.
Owner:HUBEI UNIV

Novel low-temperature heat-not-burn cigarette with functions of temperature reduction and aroma conservation

PendingCN108041680ARich and diverse structureRich and diversified composition materialsTobacco smoke filtersEngineeringElectronic cigarette
The invention discloses a novel low-temperature heat-not-burn cigarette with functions of temperature reduction and aroma conservation. The cigarette specifically comprises six parts of a big hollow filter stick, a temperature reduction filter stick section, a small hollow filter stick, a tobacco stick, an inner wrapping layer and an external wrapping layer, the cigarette is a novel cigarette witha quaternary compound structure; wherein the inner wrapping layer is respectively wrapped on the tobacco stick, the hollow filter stick and the temperature reduction filter stick section, the external wrapping layer is wrapped on the inner wrapping layer and a quaternary compound stick section; according to the novel low-temperature heat-not-burn cigarette, by the organic combination of materialswith different stick shapes and structures, the novel low-temperature heat-not-burn cigarette is formed, the structure overall design efficiently reduces the smoking temperature of the cigarette, thepurpose of keeping the tobacco fragrance is kept, at the same time, the novel cigarette has the sense of smoking and satisfaction brought by a traditional cigarette, and overcomes the existing shortcomings and defects of an existing electronic cigarette.
Owner:HONGTA TOBACCO GRP

Super-lattice waveguide semiconductor laser structure

The invention belongs to the technical field of photoelectrons, and relates to a super-lattice waveguide semiconductor laser structure. The super-lattice waveguide semiconductor laser structure sequentially comprises, from bottom to top, an N-type gallium arsenide substrate, an N-type gallium arsenide buffering layer, an N-type lower limiting layer, an N-type lower waveguide layer, a quantum well layer, a P-type upper super-lattice waveguide layer, a P-type upper waveguide layer, a P-type upper limiting layer, a transition layer and an electrode contacting layer. The substrate is used for epitaxially growing various layers of materials of a laser, the N-type gallium arsenide buffering layer is mainly used for adjusting the adaption degree of a lattice, the N-type lower limiting layer is an InGaAsP quaternary compound material and used for limiting downward leakage of a light filed, the N-type lower waveguide layer is an InGaAsP quaternary compound material and used for enhancing the limitation to the light field mode, the quantum well layer (an active area material) is an InGaAs single quantum well, the P-type upper super lattice waveguide layer is an AlGaAs material and used for modulating the waveguide refractive index, the P-type upper waveguide layer is an AlGaAs material and used for enhancing the limitation to the light field mode, the P-type upper limiting layer is an AlGaAs material and used for limiting upward leakage of the light field, the transition layer is a GaAs material, and the electrode contacting layer is a GaAs material and used for forming an upper electrode with metal.
Owner:CHANGCHUN UNIV OF SCI & TECH

Tunable laser and preparation method thereof

The present invention provides a tunable laser and a preparation method thereof. The tunable laser comprises a gain region, a phase region and a grating region which are located on the same substrate, have the same height and are applied to each other. The gain region comprises in order from down to up: a lower waveguide layer, an active layer and an upper waveguide layer, the active layer is a multi-quantum well structure, the multi-quantum well structure comprises a well layer and a barrier layer which are alternatively superposed, the main body materials of the well layer and the barrier layer are both InGaAlAs quaternary compounds; the side surfaces, close to the phase region, of the lower waveguide layer, the active region and the upper waveguide layer are subjected to corrosion to form an inclined plane; the phase region and the grating region both comprise passive layers, and the passive layer of the grating region is provided with a grating structure; and the side surface, close to the inclined plane, of the phase region is consistent with the inclined plane to allow the gain region and the phase region to be applied. The side wall of the gain region is subjected to corrosion to form the inclined plane so as to effectively avoid material stack formed by the phase region and the grating region at a joint interface when joining growth of the passive layer materials and reduce the light loss and light reflection at the interface.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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