The invention belongs to the technical field of photoelectrons, and relates to a super-lattice
waveguide semiconductor laser structure. The super-lattice
waveguide semiconductor laser structure sequentially comprises, from bottom to top, an N-type
gallium arsenide substrate, an N-type
gallium arsenide buffering layer, an N-type lower limiting layer, an N-type lower
waveguide layer, a
quantum well layer, a P-type upper super-lattice waveguide layer, a P-type upper waveguide layer, a P-type upper limiting layer, a
transition layer and an
electrode contacting layer. The substrate is used for epitaxially growing various
layers of materials of a
laser, the N-type
gallium arsenide buffering layer is mainly used for adjusting the adaption degree of a lattice, the N-type lower limiting layer is an InGaAsP
quaternary compound material and used for limiting downward leakage of a light filed, the N-type lower waveguide layer is an InGaAsP
quaternary compound material and used for enhancing the limitation to the
light field mode, the
quantum well layer (an active area material) is an InGaAs single
quantum well, the P-type upper super lattice waveguide layer is an AlGaAs material and used for modulating the waveguide
refractive index, the P-type upper waveguide layer is an AlGaAs material and used for enhancing the limitation to the
light field mode, the P-type upper limiting layer is an AlGaAs material and used for limiting upward leakage of the
light field, the
transition layer is a GaAs material, and the
electrode contacting layer is a GaAs material and used for forming an upper
electrode with
metal.