Tunable laser and preparation method thereof

A technology for tuning lasers and grating regions, used in lasers, laser components, semiconductor lasers, etc., can solve the problems of weak electronic confinement, small temperature range of devices, and reduced modulation bandwidth, and achieve good electronic confinement. Loss of light, effect of reducing light loss

Active Publication Date: 2017-12-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The existing two-segment/three-segment DBR lasers are designed and manufactured using InGaAsP/InP materials, but their tunable range is small, and the electro

Method used

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  • Tunable laser and preparation method thereof

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preparation example Construction

[0044] The present invention also proposes a method for preparing a tunable laser, including the following steps: Step 1, growing a lower waveguide layer, an active layer of a multi-quantum well structure, and an upper waveguide layer on a substrate in sequence, wherein the main body of the active layer The material is an InGaAlAs quaternary compound; step 2, remove the lower waveguide layer in some areas, the active region and the upper waveguide layer of the multi-quantum well structure, and expose the substrate, so that the structure in step 1 is divided into a gain region and a passive region. Part; step 3, corroding the sidewall of the gain region close to the passive region to form a slope; step 4, growing InGaAsP / InGaAlAs quaternary compound material in the passive region by using butt growth technology, so as to be flush with the upper waveguide layer of the gain region; And a grating structure is prepared in a part of the passive area far away from the gain area, so th...

Embodiment

[0067] Such as figure 1 As shown, this embodiment proposes a tunable laser, including a gain region 1, a phase region 2, and a grating region 3 that are located on the same substrate 4, have the same height and are sequentially attached, wherein: the gain region 1 is from bottom to top Include in sequence: a lower waveguide layer 5, an active layer 6 and an upper waveguide layer 7, the active layer 6 is a multi-quantum well structure, the multi-quantum well structure includes 5 well layers and 6 barrier layers stacked alternately, the well layer The main materials of the barrier layer and the barrier layer are all InGaAlAs quaternary compounds; the side surfaces of the lower waveguide layer 5, the active region 6 and the upper waveguide layer 7 near the phase region are etched to form a slope 9; the phase region 2 and the grating region 3 include no The source layer 10 and the passive layer 10 of the grating area 3 are formed with a grating structure 11; the side of the phase ...

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Abstract

The present invention provides a tunable laser and a preparation method thereof. The tunable laser comprises a gain region, a phase region and a grating region which are located on the same substrate, have the same height and are applied to each other. The gain region comprises in order from down to up: a lower waveguide layer, an active layer and an upper waveguide layer, the active layer is a multi-quantum well structure, the multi-quantum well structure comprises a well layer and a barrier layer which are alternatively superposed, the main body materials of the well layer and the barrier layer are both InGaAlAs quaternary compounds; the side surfaces, close to the phase region, of the lower waveguide layer, the active region and the upper waveguide layer are subjected to corrosion to form an inclined plane; the phase region and the grating region both comprise passive layers, and the passive layer of the grating region is provided with a grating structure; and the side surface, close to the inclined plane, of the phase region is consistent with the inclined plane to allow the gain region and the phase region to be applied. The side wall of the gain region is subjected to corrosion to form the inclined plane so as to effectively avoid material stack formed by the phase region and the grating region at a joint interface when joining growth of the passive layer materials and reduce the light loss and light reflection at the interface.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic integrated devices, and more specifically relates to a tunable laser and a preparation method thereof. Background technique [0002] Wavelength division multiplexing (WDM) optical communication systems can effectively utilize the capacity of optical fibers by simultaneously transmitting multiple wavelengths. In WDM systems, tunable lasers can greatly reduce the amount of device inventory in manufacturing and operation. When using a single-wavelength light source like a distributed feedback (DFB) laser, it is necessary to prepare many lasers with different emission wavelengths, which greatly increases the cost. Using tunable lasers requires several devices to cover all wavelengths, and it is also very convenient to replace failed devices. [0003] Distributed Bragg Reflection (DBR) tunable lasers are used in WDM systems because of their compact size, high mechanical reliability and eas...

Claims

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Application Information

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IPC IPC(8): H01S5/343
CPCH01S5/34366
Inventor 周代兵赵玲娟梁松王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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