8 results about "Homogeneous microstructure" patented technology

The application discloses a large-current aluminum alloy conductor polypropylene insulated medium-voltage power cable and belongs to the technical field of cable preparation, which is used to solve the technical problem that the shielding performance and heat dissipation performance of the polypropylene insulated power cable in the prior art need to be further improved. The polypropylene insulated power cable prepared by the application introduces modified core-shell carbon-nitrogen bodies and silicon-oxygen-nitrogen polypropylene into a polypropylene insulation layer, and a nucleating agent is used to regulate the crystalline structure. The modified core-shell carbon-nitrogen bodies improve the interface heat conduction and charge distribution, the silicon-oxygen-nitrogen polypropylene enhances the chain segment stability and crystalline compactness, and the nucleating agent makes the matrix form a uniform microstructure. Through the structure design, the cable insulation layer maintains a high level in terms of heat distortion temperature, thermal conductivity and volume resistivity, and at the same time, good electromagnetic shielding efficiency is realized, and the heat resistance, thermal conductivity and insulation performance are comprehensively improved.

The application belongs to the technical field of electronic ceramic materials, and particularly relates to a high-performance Y5P type barium titanate-based ceramic material sintered in air atmosphere and a preparation method thereof. The ceramic material takes BaTiO3 as a main raw material, is supplemented with MgCO3, ZnO, MnCO3, ZrO2, Nb2O5 and La2O3 as composite modification additives, and after sintering in air atmosphere, the ceramic material forms a dense and uniform microstructure, has excellent dielectric properties: a dielectric constant (ε) is 2800-3500, a dielectric loss tangent (tan δ) is as low as 1.1% or below, a volume resistivity (ρ) is 1.0*10 12 Ω·cm or above, a content temperature change rate is-9.8%-+9.1% in a temperature range of-30 DEG C to 85 DEG C, and meets a Y5P type temperature characteristic standard (ΔC / C 25 ℃≤±10%). The material can realize high insulation resistance, low loss and stable temperature characteristics by being directly sintered in air, does not need a complex reduction and reoxidation process, is suitable for preparing ceramic capacitors with high reliability and low cost, and is particularly suitable for the fields of consumer electronics and industrial electronics with medium-high voltage and high stability requirements.

The invention relates to the technical field of target materials, in particular to a high-purity tantalum rotating target material and a preparation method of the high-purity tantalum rotating target material. A modified component: 0.001 to 0.005 wt% of a composite doping element is added; the composite doping element is mixed by B and Zr in a mass ratio of 1: (2-3); according to the technical scheme, all the steps are matched with one another, and the purposes of minimizing the impurity content, refining the grain size, densifying the internal structure and thoroughly eliminating the internal stress are achieved. In the sputtering application, particle splashing is reduced through a high-densification structure, the sputtering stability is improved through a uniform microstructure and good electric conductivity and heat conductivity, and finally the effects that the sputtering rate is increased, the film layer roughness is reduced, and the thickness uniformity is optimized are achieved. The problems that an existing target material is insufficient in densification, poor in mechanical property and unstable in sputtering effect are effectively solved, and the strict requirements of the high-end coating field are met.

The present disclosure is directed to systems, compositions, and methods for manufacturing objects with sharp edges having a high strength and hardness. To form the sharp edge, an object can be subjected to a compressive force that locally deforms the object to create the sharp edge. In some embodiments, deformation can occur by passing the material through a system of one or more opposed tapered rolls having one or more tapering angles for deforming the material. The tapered rolls can rotate and drive the material downstream to a next opposed pair of tapered rolls. The tapered rolls deform the material by changing the material microstructure, compressing the grains of the material in a predetermined location to create a more homogeneous microstructure. The local modification of the resulting microstructure increases the homogeneity as well as the hardness and strength of the material and prevents cracking and / or chipping of the material.

The application relates to the technical field of target materials, in particular to a high-purity tantalum rotating target material and a preparation method thereof, which comprises the following components: a main component, tantalum powder; a modified component, 0.001-0.005 wt% of composite doped elements; and the composite doped elements are B and Zr mixed at a mass ratio of 1:2-3. The technical scheme of the application realizes minimization of impurity content, fine grain size, densification of internal structure and complete elimination of internal stress. In sputtering application, the high densification structure reduces particle splashing, the uniform microstructure and good electric conductivity and thermal conductivity improve sputtering stability, and finally the effects of improved sputtering rate, reduced film layer roughness and optimized thickness uniformity are realized, the problems of insufficient densification, poor mechanical property and unstable sputtering effect of the existing target material are effectively solved, and the strict requirements of the high-end film plating field are met.

The present disclosure is directed to systems, compositions, and methods for manufacturing objects with sharp edges having a high strength and hardness. To form the sharp edge, an object can be subjected to a compressive force that locally deforms the object to create the sharp edge. In some embodiments, deformation can occur by passing the material through a system of one or more opposed tapered rolls having one or more tapering angles for deforming the material. The tapered rolls can rotate and drive the material downstream to a next opposed pair of tapered rolls. The tapered rolls deform the material by changing the material microstructure, compressing the grains of the material in a predetermined location to create a more homogeneous microstructure. The local modification of the resulting microstructure increases the homogeneity as well as the hardness and strength of the material and prevents cracking and / or chipping of the material.

The invention relates to the technical field of lithium ion battery positive electrode materials, and provides an ultrahigh nickel ternary positive electrode material with approximate isometric crystal primary grain narrow distribution characteristics, and a preparation method and application thereof. The precursor with specific Ni element gradient concentration difference is utilized, the nickel concentration gradient structure is weakened through high-temperature uniform diffusion of transition metal elements in the sintering process, and the obtained ultrahigh-nickel ternary positive electrode material has no gradient concentration difference; however, the local concentration difference of the transition metal elements induces primary particle morphology similar to equiaxed crystals in the particles, and finally a relatively uniform microstructure is obtained. The ultrahigh-nickel ternary positive electrode material has the characteristic of approximate equiaxed crystal primary grain narrow distribution, is high in structural stability, and has good rate capability and cycling stability when being applied to a lithium ion battery.

According to the silver-bismuth-copper alloy electrode material for the high-temperature crystal oscillator and the high-temperature-resistant coating method for the crystal oscillator, the problems that pure silver is prone to crystal grain growth and oxidation to form electrode material defects, and frequency drift is caused by electrode material defects of a traditional crystal oscillator in a high-temperature environment are solved; a multi-element alloy electrode material which takes silver as a basis and is added with bismuth, copper, indium, lanthanum and antimony and a matched preparation and coating process are provided, silver ensures excellent conductivity of an electrode, bismuth pinns a grain boundary, copper forms second-phase particles to jointly inhibit grain growth at high temperature, and the conductivity of the electrode is improved. Indium preferentially forms a compact oxide film, lanthanum purifies impurities and refines initial crystal grains, antimony optimizes wettability of a film layer to synergistically inhibit oxidation, and because crystal grain growth is inhibited, a fine and uniform microstructure of the electrode film layer can be maintained, uniform electron scattering and stable resistance are ensured, and electric field change of an excitation substrate caused by resistance fluctuation is avoided. The oxidation inhibition can prevent irregular change of electrode mass and volume and local difference of thermal expansion coefficient, and reduces frequency drift of the crystal oscillator.