2 results about "Homogeneous microstructure" patented technology

The application belongs to the technical field of electronic ceramic materials, and particularly relates to a high-performance Y5P type barium titanate-based ceramic material sintered in air atmosphere and a preparation method thereof. The ceramic material takes BaTiO3 as a main raw material, is supplemented with MgCO3, ZnO, MnCO3, ZrO2, Nb2O5 and La2O3 as composite modification additives, and after sintering in air atmosphere, the ceramic material forms a dense and uniform microstructure, has excellent dielectric properties: a dielectric constant (ε) is 2800-3500, a dielectric loss tangent (tan δ) is as low as 1.1% or below, a volume resistivity (ρ) is 1.0*10 12 Ω·cm or above, a content temperature change rate is-9.8%-+9.1% in a temperature range of-30 DEG C to 85 DEG C, and meets a Y5P type temperature characteristic standard (ΔC / C 25 ℃≤±10%). The material can realize high insulation resistance, low loss and stable temperature characteristics by being directly sintered in air, does not need a complex reduction and reoxidation process, is suitable for preparing ceramic capacitors with high reliability and low cost, and is particularly suitable for the fields of consumer electronics and industrial electronics with medium-high voltage and high stability requirements.

The application relates to the technical field of target materials, in particular to a high-purity tantalum rotating target material and a preparation method thereof, which comprises the following components: a main component, tantalum powder; a modified component, 0.001-0.005 wt% of composite doped elements; and the composite doped elements are B and Zr mixed at a mass ratio of 1:2-3. The technical scheme of the application realizes minimization of impurity content, fine grain size, densification of internal structure and complete elimination of internal stress. In sputtering application, the high densification structure reduces particle splashing, the uniform microstructure and good electric conductivity and thermal conductivity improve sputtering stability, and finally the effects of improved sputtering rate, reduced film layer roughness and optimized thickness uniformity are realized, the problems of insufficient densification, poor mechanical property and unstable sputtering effect of the existing target material are effectively solved, and the strict requirements of the high-end film plating field are met.