94 results about "Piezoelectric constant" patented technology

The laminated piezoelectric transducer piezoelectric ceramic is characterized in that the composition chemical formula is xPb (Zr, Ti) O3-(1-x) Pb (Nb, Zn) O3-a mol% Li2CO3-b mol% CuO-c mol% Sm2O3, and x is larger than or equal to 0.45 and smaller than or equal to 0.75, a is larger than or equal to 0.1 and smaller than or equal to 0.6, b is larger than or equal to 0.1 and smaller than or equal to 0.2, and c is larger than or equal to 0.15 and smaller than or equal to 0.25. The laminated piezoelectric ceramic prepared by the invention has ultralow loss, low dielectric constant and qualified piezoelectric constant, and has extremely high popularization value in the field of high-frequency vibration.

The invention discloses a method for preparing lead-free piezoelectric ceramic with high density and low defect density by hot pressed sintering, which comprises the following steps: embedding a green body formed by pressing raw materials in an embedding body formed by stacking porous metal oxide particles for hot pressed sintering, and exchanging controlled gas in the hot pressed sintering process; in the hot pressing process, a green body is embedded in a porous metal oxide particle accumulation body, the accumulation body can form a communicated gas channel on the microscopic scale and provide physical protection and volatilization blocking for the green body, and generation of oxygen vacancies can be effectively inhibited, volatilization of alkali metal is reduced, and generation of impure phases is inhibited in the hot pressing high-temperature pressed stage; therefore, the defect density is reduced while the high density is realized, the piezoelectric constant, the polarization capability and the high-temperature stability are synergistically improved, the dielectric loss is reduced, and the durability is improved.

The application discloses a temperature-stable lead zirconate titanate-based high-temperature piezoelectric ceramic and a preparation method thereof. The molecular formula of the lead zirconate titanate-based high-temperature piezoelectric ceramic is (1-x-y)Pb(Yb 1 / 2 Nb 1 / 2 )O3-yPbZrO3-xPbTiO3, wherein x is in the range of 0.4-0.6, and y is in the range of 0.4-0.6. The application realizes excellent Curie temperature (TC~400 DEG C), piezoelectric constant (d33~450 pC / N) and high coercive field (EC~17.5 kV / cm) at the same time, and realizes excellent temperature stability in a tetragonal phase sample.

The invention relates to a barium calcium zirconate titanate-sodium bismuth zirconate lead-free piezoelectric ceramic material and a preparation method and application thereof, the general formula of the ceramic material is (1-x) (Ba0. 85Ca0. 15Zr0. 1Ti0. 9O3)-x (Bi0. 5Na0. 5ZrO3), x is the molar percentage of Bi0. 5Na0. 5ZrO3 in the ceramic material, and x is greater than or equal to 0.30% and less than or equal to 1.80%. Compared with the prior art, the Ba < 0.85 > Ca < 0.15 > Zr < 0.1 > Ti < 0.9 > O < 3 > is subjected to doping modification through Bi < 0.5 > Na < 0.5 > ZrO < 3 >, so that the sintering temperature of the ceramic is reduced, and the targets of energy conservation and emission reduction are met. Meanwhile, the obtained ceramic material has a high piezoelectric constant and low dielectric loss, and has good electrical properties.

The invention belongs to the technical field of piezoelectric ceramics, and discloses a composite ion doped CBN piezoelectric ceramic material suitable for an ultra-high temperature service environment and a preparation method thereof, the structural general formula of the material is Ca (1-x) CexBi2Nb (2-y) (W2 / 3Cr1 / 3) yO9, x is greater than or equal to 0.01 and less than or equal to 0.3, and y is greater than or equal to 0.01 and less than or equal to 0.3. 0.01 < = y < = 0.03; x represents the doping concentration of Ce, and y represents the doping concentration of W and Cr. The composite doped CBN piezoelectric ceramic material provided by the invention has relatively high Curie temperature, relatively high piezoelectric constant and relatively low dielectric loss, can be suitable for a high-temperature environment of 500 DEG C or above, and is stable in performance.

To provide a piezoelectric film having high piezoelectricity and high transparency. [Solution] A piezoelectric film mainly composed of a fluororesin, wherein the piezoelectric constant d 31 A piezoelectric film having a density of 29 pC / N or more and 50 pC / N or less, an internal haze of 0.01% or more and 1.5% or less, and a retardation of 100 nm or more and 3000 nm or less.

To provide a fluororesin piezoelectric film which is obtained from a fluororesin having low melt viscosity and has high breaking strength.SOLUTION: Wherein the fluororesin piezoelectric film has a retardation of 50nm or more and 3000nm or less, an internal haze of less than 1.2%, a breaking strength of 310MPa or more and 550MPa or less, and a piezoelectric coefficient d33 of 5. 0pC / N or more and 40. 0pC / N or less.SELECTED DRAWING: None

The invention discloses a texture preparation method for high-performance lead-free piezoelectric ceramics of bismuth ferrite-barium titanate. The general formula of the ceramic composition is as follows, where the molar fraction ratio of BiFeO3 and BaTiO3 is 2:1, x, y, t, and m all represent molar fractions, and 0 < x ≤ 0.05, 0 < y ≤ 0.05, 0 < t ≤ 0.05, 0 < m ≤ 0.05. In the sintering stage of the invention, a temperature gradient field is constructed to make the ceramic grains grow texture-directionally, and a textured piezoelectric ceramic with a piezoelectric constant d 33 reaching above 1000 pC / N at 350 °C and a T dr reaching above 350 °C is obtained. The preparation process of the invention is simple, and the prepared ceramic has excellent high-temperature performance and can be applied to the field of high-temperature piezoelectricity.

The invention discloses a piezoelectric film with bionic textures and a preparation method and application thereof, the piezoelectric film is formed by directionally stacking and depositing fibers with core-shell structures, the piezoelectric film has a gully-bulge alternating bionic morphology imitating human skin surface textures, and the aperture of the piezoelectric film is gradually increased from an attachment surface in the thickness direction; the fiber having the core-shell structure comprises: a core layer having a porous structure and containing modified molybdenum disulfide and polyester; the shell layer wraps the core layer, and the shell layer contains collagen; the piezoelectric film comprises a sensing unit area and a flexible connection area, the collagen crosslinking degree of the sensing unit area is larger than 75%, and the collagen crosslinking degree of the flexible connection area is 40%-55%. Under the synergistic effect of materials and structures, the piezoelectric film not only has a high piezoelectric constant, but also shows excellent mechanical properties, air permeability and moisture penetrability, and has wide application prospects in the fields of electronic skin, health monitoring and the like.

This invention discloses a piezoelectric ceramic, its preparation method, and its applications. The preparation method of the piezoelectric ceramic includes: mixing Pb, Zr, Ti, Nb, Zn, Ni, Mg, and W sources until homogeneous; pre-firing the mixture at 800-850°C in air to obtain a pre-fired material; mixing Li₂CO₃ with the pre-fired material until homogeneous to obtain a piezoelectric ceramic material; granulating the mixture; pressing it into shape; sintering it at 900-950°C in air; and polarizing it in silicone oil to obtain the piezoelectric ceramic. This invention constructs a piezoelectric ceramic with a composite perovskite structure through doping with Zn, Ni, Nb, Mg, and W. The piezoelectric ceramic of this invention has a high Curie temperature and piezoelectric constant. The high Curie temperature allows it to maintain good piezoelectric properties at higher temperatures.

This fluorine-based resin piezoelectric film has a retardation of 100-2,000 nm, an internal haze of less than 1.7%, an average value of piezoelectric constants d33 of 6.0-40.0 pC / N, as measured at 21 measurement points determined in a fast-axis direction, and a standard deviation of the piezoelectric constants d33 of at most 2.0 pC / N.

This invention discloses a piezoelectric ceramic membrane and its preparation method, comprising a modified lead zirconate titanate-based ceramic and a surface functional coating. The modified lead zirconate titanate-based ceramic serves as the substrate, wherein x = 0.52-0.54, and contains A-site doping elements, B-site doping elements, and sintering aids. The surface functional coating is silicon nitride, with a thickness of 100-300 nm, and is prepared by low-pressure chemical vapor deposition (LPCVD). This invention, through La, Nb, Sr, and Mn multi-component composite doping, significantly reduces the temperature coefficients of the piezoelectric constant d31 and the electromechanical coupling coefficient k31, achieving a displacement drift ≤ ±3% over a wide temperature range of -20℃ to 85℃, ensuring stable micro-infusion accuracy under different environments. The integrated composite membrane structure with a central island and annular support improves displacement linearity while ensuring a large stroke, reducing hysteresis and creep, and meeting the ultra-high precision infusion requirements of 0.05U~0.01U.

The invention provides a lead-free piezoelectric ceramic material, a preparation method thereof and a piezoelectric device. The lead-free piezoelectric ceramic material is represented by a chemical general formula as follows: (1-x-y) (K1-aNaa) (Nb1-bMb) O < 3-x > AWO < 4-y > BMoO < 4 >, wherein (K1-aNaa) (Nb1-bMb) O3 represents a potassium-sodium niobate-based ceramic material, a is greater than or equal to 0.4 and less than or equal to 0.6, b is greater than or equal to 0 and less than or equal to 0.1, and M is a doped metal element; x and y are mole fractions and satisfy 0 lt; x is less than or equal to 0.05, 0lt; y is less than or equal to 0.05, and 0 lt; x + y < = 0.1; the AWO4 is tungstate, and the BMoO4 is molybdate. Through the synergistic effect of tungstate and molybdate, the sintering temperature of the lead-free piezoelectric ceramic material is reduced, the piezoelectric constant of the lead-free piezoelectric ceramic material is improved, the dielectric loss of the lead-free piezoelectric ceramic material is reduced, the comprehensive performance of the lead-free piezoelectric ceramic material is greatly improved, and the lead-free piezoelectric ceramic material can be applied to piezoelectric devices such as piezoelectric motors with high requirements for piezoelectric performance.

A laminated piezoelectric body having: a piezoelectric film containing a fluorine-based resin as a main component and having a piezoelectric constant (d33) of 7-40 pC / N (inclusive); a charge dispersion layer that is disposed on at least one surface of the piezoelectric film and that has a surface resistivity of 1.0 * 104 Omega / sq. Or more and 1.0 * 1012 Omega / sq. Or less; a transparent electrode; and a transparent adhesive layer disposed between the transparent electrode and the charge dispersion layer, the total light transmittance of the laminated piezoelectric body being 80% or more.

The invention provides a lead-free piezoelectric ceramic material and a preparation method and application thereof. The piezoelectric constant d33 of the ceramic material is larger than or equal to 320 pC / N, the mechanical quality factor Qm is larger than or equal to 1090, and the dielectric loss tan delta is smaller than or equal to 1.8%. Due to the special performance parameters of the lead-free piezoelectric ceramic material, on the premise of keeping environment friendliness, the energy conversion efficiency can be effectively improved, the heat yield is reduced, and the lead-free piezoelectric ceramic material has better stability.

A toothbrush filament preparation method, a prepared toothbrush filament, and a toothbrush. The toothbrush filament preparation method comprises: melting and extruding a piezoelectric polymer, and executing a corona polarization step and an annealing step, such that the piezoelectric constant of a toothbrush filament in a standing state is greater than or equal to 0.4 pC / N, and some polarization charges stably exist on the surface of the toothbrush filament. The problem of bacteria breeding on a toothbrush filament in a standing state can be effectively relieved by utilizing the action principle of physical electrical stimulation for an antibacterial purpose, thereby improving the antibacterial properties of the toothbrush filament.

The invention belongs to the technical field of high polymer materials, and particularly relates to a polyesteramide microsphere, a preparation method thereof and a piezoelectric composite material. The particle size of the polyesteramide microspheres is 20-70 [mu] m, and the piezoelectric constant of the polyesteramide microspheres is 3-19 pC / N. Therefore, the polyesteramide microspheres provided by the invention are controllable in particle size and have certain piezoelectric property, and the application field of the polyesteramide microspheres can be expanded.

The invention provides a piezoelectric material and a preparation method thereof, a piezoelectric device and electronic equipment, the chemical general formula of the piezoelectric material is xPb (Mn1 / 2W1 / 2) O3-(1-x) [0.15 Pb (Zn1 / 3Nb2 / 3) O3-0.85 Pb (Zr0. 5Ti0. 5) O3], and x is greater than or equal to 0.05 and less than or equal to 0.08. A solid-phase synthesis method is adopted, the mechanical quality factor, the electromechanical coupling coefficient, the piezoelectric constant, the dielectric loss, the Young modulus and the like of the prepared piezoelectric material are improved by doping lead tungstate manganate, regulating and controlling the parameter range of x and controlling the sintering temperature in the synthesis process and preferably adding rare earth elements Yb, Er, Eu and the like, the preparation process is simple, the raw materials are environmentally friendly, and the method is suitable for industrial production. When the piezoelectric material is applied to high-frequency piezoelectric devices and electronic equipment, the use requirements of high performance and low power consumption can be met.

The application relates to the technical field of piezoelectric constant measurement of piezoelectric materials, and discloses a piezoelectric constant measurement device for piezoelectric materials, which comprises a machine body, a measurement mechanism, a static force applying mechanism and a dynamic force applying mechanism. The measurement mechanism comprises a first conductive part, a second conductive part and a measurement assembly. The first conductive part is arranged in a spaced mode with the second conductive part. The measurement assembly is electrically connected with the first conductive part and the second conductive part, and is used for measuring the charge amount released by the piezoelectric material when the piezoelectric material is pressed. The static force applying mechanism is connected with the first conductive part and the machine body, and is used for applying a static force to the piezoelectric material through the first conductive part. The dynamic force applying mechanism comprises a dynamic force sensor and a vibration exciter. The vibration exciter is connected with the machine body and the dynamic force sensor, and is connected with the second conductive part through the dynamic force sensor, and is used for applying a dynamic force to the piezoelectric material. The piezoelectric constant of the piezoelectric material can be accurately measured, and the interference of the error of the reference material on the piezoelectric constant measurement of the piezoelectric material is avoided.

A piezoelectric constant measurement device (1) is provided that can accurately measure the piezoelectric constant d33 even when the load applied to a piezoelectric thin film on a wafer is small. This piezoelectric constant measurement device (1) measures the piezoelectric constant d33 of a piezoelectric thin film (W3) formed on a wafer (WA), and includes a wafer stage (2), a first electrode (3) that can contact a predetermined portion of the wafer (WA), a second electrode (4), a second electrode load means (5) that is controlled by a reference frequency signal and can apply a periodic load to the piezoelectric thin film (W3) via the second electrode (4), a load measurement means (6) that outputs the amplitude value of the periodic load or a value proportional thereto, a reference frequency signal generator (7) that outputs a reference frequency signal, a lock-in amplifier (8) that receives a current due to charges generated in the piezoelectric thin film (W3) as a signal to be measured via the second electrode (4), receives the reference frequency signal as a reference signal, and outputs the amplitude value of the signal to be measured or a value proportional thereto, and a piezoelectric constant measurement control means (9) that calculates the piezoelectric constant d33.

The invention provides a secondary battery, a preparation method thereof and electric equipment. The secondary battery comprises one or more battery cells, the battery cell comprises a negative pole piece; the negative pole piece comprises a microcapsule; the microcapsule comprises an inner core and a shell layer arranged on the surface of the inner core; the inner core comprises a polymer, a lithium salt and chain carbonate; the shell layer comprises at least one of an organic piezoelectric material, a thermosensitive high polymer material and an acid response type high polymer material; the secondary battery satisfies at least one of the following conditions: 1) the piezoelectric constant d33 of the organic piezoelectric material is 10-50 pC / N; 2) the glass transition temperature of the thermosensitive polymer material is 50-100 DEG C, and 3) the acid response type polymer material comprises an acidolysis material which is degraded when the acid concentration is 3-120 ppm. The secondary battery provided by the invention has the advantages of less electrolyte consumption, good cycle performance and small internal resistance.

The application discloses a high-impedance near-zero temperature drift high-temperature piezoelectric crystal material and a growth method and application thereof, and belongs to the technical field of piezoelectric crystal growth. x Gd 1‑x Ca4O(BO3)3, x=0.1-0.3, and the high-impedance near-zero temperature drift high-temperature piezoelectric crystal material can be obtained by using a conventional Czochralski method to grow a large-size high-quality single crystal, and the growth process is simple and easy to process. The piezoelectric special-shaped element made of the crystal material has an effective longitudinal piezoelectric constant d 33 The effective shear piezoelectric constant d 26 The high-temperature 1000 DEG C resistivity can reach 10 6 Ω.cm; the piezoelectric constant change rate in the range from room temperature to 1000 DEG C is below 5%, and the crystal material has the near-zero temperature drift characteristic and high-temperature resistance.

A system for per- and poly-fluoroalkyl substance degradation includes an outer housing and a porous article, which includes a piezoelectric material. The porous article has a porosity in a range from 40% to 90% and a piezoelectric constant d31 in a range from 5 pC / N to 150 pC / N.

To provide a fluorine-based resin piezoelectric film having a low shrinkage factor during heating and high transparency.SOLUTION: A fluororesin piezoelectric film having a maximum shrinkage of 2.5% or less when held at 80 °C for 30 minutes, a retardation of 50nm or more and 3000nm or less, an internal haze of less than 1.2%, and a piezoelectric coefficient d33 of 5. 0pC / N or more and 40. 0pC / N or less.SELECTED DRAWING: None

The piezoelectric ceramic according to the present invention contains a perovskite compound that contains at least Pb, Zr, Ti, Mn, and Nb. The crystallite diameter calculated from X-ray crystal structure analysis of the perovskite compound is at least 190 nm and not more than 320 nm. The absolute value of the product of the piezoelectric constant d31 and the mechanical quality factor Qm is at least 410 nC / N.

The invention discloses a high-performance PSSN-PMN-PZ-PT-Cu textured piezoelectric ceramic material and a preparation method thereof, the chemical composition expression is Pb1-1.5 aSma [(Sc1 / 2Nb1 / 2) x (Mg1 / 3Nb2 / 3) yZrzTi (1-x-y-z)] O3-bCuO-cBaTiO3, a, x, y and z all represent molar fractions, b and c respectively represent the mass percentages of CuO and BaTiO3, a is greater than or equal to 0.005 and less than or equal to 0.025, and c is greater than or equal to 0.15 lt; x < = 0.5, 0.05 < = y < = 0.15, 0.03 < = z < = 0.15, 0.1 < = b < = 1, and 0.5 < = c < = 10; the material is subjected to multiple times of ball milling, presintering and powdering, then is subjected to tape casting, lamination, isostatic pressing and sintering in an oxygen atmosphere to obtain [001] oriented ceramic, and finally, is coated with an electrode and is polarized to prepare the [001] oriented ceramic. After the material is sintered at 900 DEG C, the piezoelectric constant reaches 820 pC / N, and the Curie temperature reaches 238 DEG C.

Provided is a piezoelectric film having excellent piezoelectric properties and high transparency. The piezoelectric film according to the present invention contains a fluorine-based resin as a main component, has a piezoelectric constant d31 of 15-50 pC / N, an electromechanical coupling constant k31 of at least 0.14, an internal haze of 0.01-10.0%, and a retardation of 100-3000 nm.

The invention discloses a positive electrode material as well as a preparation method and application thereof, belongs to the technical field of positive electrode materials, and aims to overcome the defect that a high-nickel ternary polycrystalline positive electrode material is difficult to consider rate capability improvement, microcrack reduction and cycle performance improvement. The positive electrode material comprises polycrystalline ternary positive electrode active material particles and a coating layer arranged on the surfaces of the polycrystalline ternary positive electrode active material particles, each polycrystalline ternary positive active material particle comprises an inner core and a buffer layer from inside to outside; the inner core comprises ternary positive active material particles A; the buffer layer comprises ternary positive active material particles B and a dielectric piezoelectric material A; the dielectric constant of the dielectric piezoelectric material A is epsilon gt; 1000, the piezoelectric constant is dgt; 100 pC / N; and the coating layer comprises a dielectric piezoelectric material B. The positive electrode material provided by the invention can significantly improve the rate capability and cycle performance of the battery.

A laminated piezoelectric body having: a piezoelectric film containing a fluorine-based resin as a main component; an antistatic layer disposed on at least one surface of the piezoelectric film and having a thickness of 10 nm or more and 250 nm or less; and a hard coat layer disposed on the antistatic layer and having a maximum surface height Rz of 40 nm to 150 nm (inclusive). The surface resistivity of the laminated piezoelectric body measured on the hard coat layer is 1.0 * 106 Omega / sq. Or more and 1.0 * 1012 Omega / sq. Or less, the total light transmittance of the laminated piezoelectric body is 85% or more, and the piezoelectric constant d33 is 7 pC / N or more and 40 pC / N or less.

The invention discloses a high-titanium-doped lithium niobate target material, a preparation method thereof and a sensor, and the preparation method comprises the following steps: adding an acidic lithium-containing solution into a mixed solution of titanium and niobium, and reacting to obtain gel; performing heat treatment on the gel to obtain powder; and preparing the high-titanium doped lithium niobate target material according to the powder. The invention provides a wet chemical method for preparing the Ti-doped LiNbO3 target material, a high-density and fine-grain target material microstructure is easy to obtain, elements are uniformly distributed, and a relatively high Ti element proportion can be doped. Besides, the Ti-doped LiNbO3 piezoelectric coating obtained on the basis of the high-titanium-doped lithium niobate target material is extremely high in substance purity and has very excellent piezoelectric performance, and the piezoelectric constant d33 is greatly increased and reaches 12.4 pC / N.