176 results about "Piezoelectric constant" patented technology

The invention discloses a vanadium-doped LiNbO3 piezoelectric coating with high piezoelectric performance and a preparation method of the vanadium-doped LiNbO3 piezoelectric coating, and relates to the technical field of lithium niobate coatings and sensors. The preparation method of the coating comprises the following steps: designing a vanadium-doped lithium niobate target material; cleaning the substrate and magnetron sputtering equipment; installing a target material and a substrate in magnetron sputtering equipment; vacuumizing the magnetron sputtering equipment to an ideal vacuum degree, and heating to a target temperature; environment parameters are set, and the surface of the target material is cleaned; after cleaning of the target material is completed, the front face of the substrate and the surface of the target material are arranged to be in a relative state, the distance is adjusted, environment parameters are set for deposition, and the vanadium-doped LiNbO3 piezoelectric coating is prepared; the target material is a vanadium-doped lithium niobate target material, and the vanadium-doped atom number accounts for 1.3-3.9%. The vanadium-doped LiNbO3 piezoelectric coating prepared by the method disclosed by the invention has an obvious columnar crystal structure and does not contain impurity phases such as NbO, Nb2O5 and LiNb3O8, and the O / Nb atomic ratio reaches 2.9 and is close to an ideal form; compared with a pure lithium niobate crystal / coating, the lithium niobate crystal / coating has the advantages of high piezoelectric constant, extremely strong ultrasonic signal and excellent temperature resistance.

The invention relates to a bismuth scandate-lead titanate based piezoelectric ceramic material and a preparation method and application thereof, the chemical general formula of the bismuth scandate-lead titanate based piezoelectric ceramic material is (1-y) Bi (Sc (1-x) Mex) O3-yPbTiO3, Me is a late transition metal element, x is 0.03-0.3, and y is 0.63-0.64. Compared with the prior art, the piezoelectric anisotropy and the piezoelectric property of the piezoelectric ceramic are improved by doping the rear transition group metal element Me on the basis of the BiScO3-PbTiO3 binary system piezoelectric ceramic material, the piezoelectric constant d33 is greater than 500pC / N, and the piezoelectric anisotropy d33 / d31 is greater than 3.5.

The invention discloses a high-purity light metal doped LiNbO3 piezoelectric coating and a preparation method thereof, and relates to the technical field of lithium niobate piezoelectric coatings. The preparation method of the coating comprises the following steps: designing a light metal element doped lithium niobate target material; polishing and cleaning the substrate and magnetron sputtering equipment; mounting a target material and a substrate; the magnetron sputtering equipment is started, and the surface of the target material is cleaned; and depositing a target material to the front surface of the substrate by adopting a radio frequency magnetron sputtering method to prepare the light metal doped lithium niobate piezoelectric coating. Test on structure, morphology, element, ultrasonic performance and piezoelectric performance of the prepared light element doped lithium niobate piezoelectric coating shows that the coating does not contain LiNb3O8 lithium-deficient phase, does not contain impurity phases such as NbO and Nb2O5, and is a high-purity light metal doped LiNbO3 piezoelectric coating. The piezoelectric constant and ultrasonic signal superior to those of a pure lithium niobate piezoelectric coating can be obtained by adjusting doped elements and the content of the doped elements, and the lithium niobate piezoelectric coating has excellent high-temperature performance stability.

The invention discloses a piezoelectric unit, a preparation method thereof and electronic equipment, and relates to the technical field of piezoelectric device preparation, the piezoelectric unit comprises a substrate, a single crystal dielectric oxide layer, a first electrode layer, a perovskite type single crystal seed crystal layer and a piezoelectric layer which are laminated, and the lattice orientation rate (100) / ((100) + (001)) of the piezoelectric layer is in a range of 0.7-0.8. The piezoelectric unit disclosed by the invention has a relatively high piezoelectric constant, so that the piezoelectric unit can be better driven; and meanwhile, the dielectric constant of the piezoelectric layer is controlled within a relatively low range, so that the consumed electric energy and the emitted heat during driving are reduced.

The laminated piezoelectric transducer piezoelectric ceramic is characterized in that the composition chemical formula is xPb (Zr, Ti) O3-(1-x) Pb (Nb, Zn) O3-a mol% Li2CO3-b mol% CuO-c mol% Sm2O3, and x is larger than or equal to 0.45 and smaller than or equal to 0.75, a is larger than or equal to 0.1 and smaller than or equal to 0.6, b is larger than or equal to 0.1 and smaller than or equal to 0.2, and c is larger than or equal to 0.15 and smaller than or equal to 0.25. The laminated piezoelectric ceramic prepared by the invention has ultralow loss, low dielectric constant and qualified piezoelectric constant, and has extremely high popularization value in the field of high-frequency vibration.

The invention discloses a micro pulse electric thruster element impulse measuring device and method, and relates to the technical field of electric thrusters, and the device comprises piezoelectric ceramic which is located at an outlet of a micro pulse electric thruster and is used for receiving plasma plume generated by the micro pulse electric thruster, the pressure generated by the plasma plume on the surface of the piezoelectric ceramic is converted into an original electric signal; and the element impulse calculation unit is connected with the piezoelectric ceramic and is used for calculating the element impulse of the micro pulse electric thruster according to the original electric signal, the thickness of the piezoelectric ceramic, the piezoelectric constant of the piezoelectric ceramic and the effective cross section area of the plasma plume on the surface of the piezoelectric ceramic. According to the invention, the piezoelectric ceramic is used as a measurement device for the element impulse of the micro pulse electric thruster, the sensitivity of the element impulse measurement device is improved, and the complexity of the structure of the device is reduced at the same time.

The invention discloses a ternary system potassium sodium niobate-based leadless piezoelectric ceramic and a preparation method thereof, the chemical composition of the potassium sodium niobate-based leadless piezoelectric ceramic is (0.96-x) (K < 0.48 > Na < 0.52 >) (Nb < 0.96 > Sb < 0.04 >) O < 3 >-0.04 wt% Bi < 0.5 > Na < 0.5 > Zr < 0.85 > Hf < 0.15 > O < 3-x > Bi < Sc > O < 3-0.85 wt% Cu < O >-0.2 wt% Fe < 2 > O < 3 >, x is the molar percentage of Bi < Sc > O < 3 >, and x is more than or equal to 0.01 and less than or equal to 0.1. The invention relates to the technical field of lead-free piezoelectric ceramic preparation. According to the ternary system potassium-sodium niobate-based lead-free piezoelectric ceramic and the preparation method, the ternary system potassium-sodium niobate-based lead-free piezoelectric ceramic has a high piezoelectric constant and a high mechanical quality factor, keeps a high Curie temperature at the same time, is the lead-free piezoelectric ceramic with great potential, and can be applied to the fields of ultrasound, atomization and the like. The ceramic powder is prepared by adopting a two-step method, the ceramic block is prepared by adopting a two-step sintering method, the preparation method can be suitable for industrial production, and the prepared ceramic is stable in performance, high in practical value and wide in application prospect.

According to the two-dimensional lead-based perovskite PVDF piezoelectric-photoelectric composite film as well as the preparation method and the application thereof, (2-FBA) 2PbCl4 and PVDF are compounded, so that the content of a beta phase with a high piezoelectric constant in PVDF is effectively increased, the voltage output performance of a composite piezoelectric sensor is enhanced, meanwhile, the two-dimensional lead-based perovskite PVDF piezoelectric-photoelectric composite film has good performance in the photoelectric aspect, and the two-dimensional lead-based perovskite PVDF piezoelectric-photoelectric composite film has good application prospects. And a reliable scheme is provided for a piezoelectric-photoelectric self-powered device.

The invention discloses a perovskite-type potassium-sodium niobate-based composite ceramic and a preparation method thereof, the perovskite-type potassium-sodium niobate-based composite ceramic is prepared from two kinds of lead-free piezoelectric ceramics, which are 0.965 (K < 0.48 > Na < 0.52 >) (Nb0.955 Sb < 0.045 >) O < 3 >-0.035 (Bi < 0.5 >, Na < 0.5 >) HfO3 and (K < 0.5 > Na < 0.5 >) NbO < 3 >-1% mol Cu, and the two kinds of lead-free piezoelectric ceramics are firstly pre-synthesized into powder and then mixed, dried and sintered to prepare the perovskite-type potassium-sodium niobate-based composite ceramic. The potassium-sodium niobate-based composite ceramic prepared by mixing potassium-sodium niobate-based ceramic powder of two different systems according to different molar ratios, dry-pressing and sintering has excellent piezoelectric property, good temperature stability and good mechanical quality factor, the piezoelectric constant d33 of the potassium-sodium niobate-based composite ceramic is 254 pC / N, kp reaches 0.51, Qm is 173, and Tc is 304 DEG C.

Provided are a piezoelectric ceramics which does not contain lead, has small temperature dependence of a piezoelectric constant within an operating temperature range, and has high density, a high mechanical quality factor, a satisfactory piezoelectric constant, and a small surface roughness, and a method of manufacturing the piezoelectric ceramics. The method of manufacturing a piezoelectric ceramics is characterized by including: sintering a compact containing a raw material at 1,000° C. or more to obtain a sintered compact; abrading the sintered compact; and annealing the abraded sintered compact at a temperature of 800° C. or more and less than 1,000° C.

The present invention relates to the field of piezoelectric ceramic materials, in particular to a piezoelectric ceramic material with high Curie temperature and high piezoelectric coefficient and a preparation method thereof, wherein the structural formula is as follows: (1‑x‑y)(Bi2O2) 2+ (A m‑1 B m O 3m+1 ) 2‑ ‑xLiTaO3‑yLaAlO3, where A is Na + , K + , Ca 2+ , Sr 2+ , Ba 2+ , Pb 2+ 、Bi 3+ ,La 3+ Any one or more of the following; B is Fe 3+ 、Ti 4+ , Nb 5+ , W 6+ Any one or more of the composites; m is an integer between 1‑4; 0<x≤0.2; 0<y≤0.2. The piezoelectric ceramic material prepared by the present invention has a high Curie temperature and excellent electrochemical properties. The maximum piezoelectric constant can reach 35pC / N, which is significantly improved compared with the currently reported bismuth layered structure piezoelectric ceramics.

The invention provides a piezoelectric MEMS transducer and an electrical product. The piezoelectric MEMS transducer comprises a first electrode layer, a second electrode layer and a single crystal piezoelectric film, the first electrode layer and the second electrode layer are correspondingly attached to the surfaces of the two sides of the single crystal piezoelectric film respectively. The single-crystal piezoelectric film is a single-crystal lithium niobate film or a single-crystal lithium tantalate film, and the single-crystal piezoelectric film has a determined cutting type of a target Euler angle, so that the piezoelectric coupling coefficient of the single-crystal piezoelectric film is not less than 6.4% or the absolute value of an e33 coefficient in a piezoelectric constant matrix is not less than 1.55; wherein the piezoelectric MEMS transducer works in a thickness expansion and contraction mode.

The invention relates to the field of piezoelectric ceramic materials, in particular to a piezoelectric ceramic material with high Curie temperature and high piezoelectric coefficient and a preparation method thereof, the structural formula of the piezoelectric ceramic material is as follows: (1-x-y) (Bi2O2) < 2 + > (Am-1BmO3m + 1) < 2-x > LiTaO3-yLaAlO3, A is any one or more of Na < + >, K < + >, Ca < 2 + >, Sr < 2 + >, Ba < 2 + >, Pb < 2 + >, Bi < 3 + > and La < 3 + >; b is any one or more of Fe < 3 + >, Ti < 4 + >, Nb < 5 + > and W < 6 + >; m is an integer between 1 and 4; 0 < x < = 0.2; 0 < y < = 0.2, the piezoelectric ceramic material prepared by the method has high Curie temperature and excellent electrochemical performance, the maximum piezoelectric constant can reach 35pC / N, and compared with the currently reported bismuth layered structure piezoelectric ceramic, the piezoelectric ceramic material has the advantage that the piezoelectric constant is greatly improved.

The invention relates to the technical field of piezoelectric ceramic materials, in particular to potassium-sodium niobate-based lead-free ceramic suitable for high-power devices and a preparation method, the chemical general formula of the potassium-sodium niobate-based lead-free ceramic is 0.96 (K < 0.45 > Na < 0.55 >) NbO < 3-0.04 > Bi < 0.5 + x > Na < 0.5 > ZrO < 3-0.005 > CuO, and x is one of 0, 0.03, 0.05, 0.08 and 0.10. According to the potassium-sodium niobate-based lead-free ceramic suitable for the high-power device and the preparation method, the potassium-sodium niobate-based lead-free ceramic has excellent comprehensive electrical properties including high piezoelectric constant, high quality factor, high Curie temperature and low dielectric loss, and is suitable for being applied to high-power electronic equipment.

A droplet discharging head executes multi-path recording in which dot recording in one main scanning line is completed by n main scans when n is an integer of 2 or more. The droplet discharging head includes: a plurality of nozzles configured to discharge a liquid as droplets; a pressure chamber defining substrate defining a pressure chamber communicating with the nozzles; a piezoelectric element including a first electrode, a second electrode, and a piezoelectric layer containing a perovskite-type composite oxide containing K, Na, and Nb as a main component; and a vibration plate forming a part of a wall surface of the pressure chamber and configured to vibrate by driving of the piezoelectric element. The number of paths n in the multi-path recording, a piezoelectric constant d31 [m / v] of the piezoelectric element, and a ratio x of a Na molar fraction to a total value of a K molar fraction and the Na molar fraction in the piezoelectric layer satisfy a relationship represented by a formula (1).

The invention discloses a method for preparing lead-free piezoelectric ceramic with high density and low defect density by hot pressed sintering, which comprises the following steps: embedding a green body formed by pressing raw materials in an embedding body formed by stacking porous metal oxide particles for hot pressed sintering, and exchanging controlled gas in the hot pressed sintering process; in the hot pressing process, a green body is embedded in a porous metal oxide particle accumulation body, the accumulation body can form a communicated gas channel on the microscopic scale and provide physical protection and volatilization blocking for the green body, and generation of oxygen vacancies can be effectively inhibited, volatilization of alkali metal is reduced, and generation of impure phases is inhibited in the hot pressing high-temperature pressed stage; therefore, the defect density is reduced while the high density is realized, the piezoelectric constant, the polarization capability and the high-temperature stability are synergistically improved, the dielectric loss is reduced, and the durability is improved.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T / O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T / O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C / T phase boundary and the O / R phase boundary: further adjusting the C / T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O / R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C / T phase boundary and the O / R phase boundary to approach the T / O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d33 and different Curie temperatures TC in the process.

The application discloses a temperature-stable lead zirconate titanate-based high-temperature piezoelectric ceramic and a preparation method thereof. The molecular formula of the lead zirconate titanate-based high-temperature piezoelectric ceramic is (1-x-y)Pb(Yb 1 / 2 Nb 1 / 2 )O3-yPbZrO3-xPbTiO3, wherein x is in the range of 0.4-0.6, and y is in the range of 0.4-0.6. The application realizes excellent Curie temperature (TC~400 DEG C), piezoelectric constant (d33~450 pC / N) and high coercive field (EC~17.5 kV / cm) at the same time, and realizes excellent temperature stability in a tetragonal phase sample.

The invention relates to a barium calcium zirconate titanate-sodium bismuth zirconate lead-free piezoelectric ceramic material and a preparation method and application thereof, the general formula of the ceramic material is (1-x) (Ba0. 85Ca0. 15Zr0. 1Ti0. 9O3)-x (Bi0. 5Na0. 5ZrO3), x is the molar percentage of Bi0. 5Na0. 5ZrO3 in the ceramic material, and x is greater than or equal to 0.30% and less than or equal to 1.80%. Compared with the prior art, the Ba < 0.85 > Ca < 0.15 > Zr < 0.1 > Ti < 0.9 > O < 3 > is subjected to doping modification through Bi < 0.5 > Na < 0.5 > ZrO < 3 >, so that the sintering temperature of the ceramic is reduced, and the targets of energy conservation and emission reduction are met. Meanwhile, the obtained ceramic material has a high piezoelectric constant and low dielectric loss, and has good electrical properties.

The invention discloses a high-impedance near-zero-temperature-drift high-temperature piezoelectric crystal material and a growth method and application thereof, and belongs to the technical field of piezoelectric crystal growth. The chemical formula of the high-impedance near-zero-temperature-drift high-temperature piezoelectric crystal material is ErxGd1-xCa4O (BO3) 3, x is equal to 0.1-0.3, large-size high-quality single crystals can be obtained through growth by adopting a conventional pulling method, the growth process is simple, and processing is easy. The effective longitudinal piezoelectric constant d33 of the piezoelectric special-shaped element made of the crystal material can reach 6.5-7.0 pC / N; the effective shear piezoelectric constant d26 can reach 8.5 to 10.0 pC / N; the resistivity can reach 106 omega.cm at the high temperature of 1000 DEG C; the change rate of the piezoelectric constant in a range from room temperature to 1000 DEG C is below 5%, and the piezoelectric ceramic has near-zero temperature excursion characteristics and high temperature resistance.

The invention belongs to the technical field of piezoelectric ceramics, and discloses a composite ion doped CBN piezoelectric ceramic material suitable for an ultra-high temperature service environment and a preparation method thereof, the structural general formula of the material is Ca (1-x) CexBi2Nb (2-y) (W2 / 3Cr1 / 3) yO9, x is greater than or equal to 0.01 and less than or equal to 0.3, and y is greater than or equal to 0.01 and less than or equal to 0.3. 0.01 < = y < = 0.03; x represents the doping concentration of Ce, and y represents the doping concentration of W and Cr. The composite doped CBN piezoelectric ceramic material provided by the invention has relatively high Curie temperature, relatively high piezoelectric constant and relatively low dielectric loss, can be suitable for a high-temperature environment of 500 DEG C or above, and is stable in performance.

To provide a piezoelectric film having high piezoelectricity and high transparency. [Solution] A piezoelectric film mainly composed of a fluororesin, wherein the piezoelectric constant d 31 A piezoelectric film having a density of 29 pC / N or more and 50 pC / N or less, an internal haze of 0.01% or more and 1.5% or less, and a retardation of 100 nm or more and 3000 nm or less.

To provide a fluororesin piezoelectric film which is obtained from a fluororesin having low melt viscosity and has high breaking strength.SOLUTION: Wherein the fluororesin piezoelectric film has a retardation of 50nm or more and 3000nm or less, an internal haze of less than 1.2%, a breaking strength of 310MPa or more and 550MPa or less, and a piezoelectric coefficient d33 of 5. 0pC / N or more and 40. 0pC / N or less.SELECTED DRAWING: None

The invention discloses a texture preparation method for high-performance lead-free piezoelectric ceramics of bismuth ferrite-barium titanate. The general formula of the ceramic composition is as follows, where the molar fraction ratio of BiFeO3 and BaTiO3 is 2:1, x, y, t, and m all represent molar fractions, and 0 < x ≤ 0.05, 0 < y ≤ 0.05, 0 < t ≤ 0.05, 0 < m ≤ 0.05. In the sintering stage of the invention, a temperature gradient field is constructed to make the ceramic grains grow texture-directionally, and a textured piezoelectric ceramic with a piezoelectric constant d 33 reaching above 1000 pC / N at 350 °C and a T dr reaching above 350 °C is obtained. The preparation process of the invention is simple, and the prepared ceramic has excellent high-temperature performance and can be applied to the field of high-temperature piezoelectricity.

To provide an electret film having high piezoelectricity and excellent in-plane uniformity of piezoelectricity, and a laminated piezoelectric sheet in which the electret film and an electrode are laminated.SOLUTION: With an electret film, an absolute value of a piezoelectric constant d33 is 40pC / N or more, and a coefficient of variations of the absolute value of the piezoelectric constant in a measurement area 400 cm2 is 0.5 or less.SELECTED DRAWING: None

The invention discloses a piezoelectric film with bionic textures and a preparation method and application thereof, the piezoelectric film is formed by directionally stacking and depositing fibers with core-shell structures, the piezoelectric film has a gully-bulge alternating bionic morphology imitating human skin surface textures, and the aperture of the piezoelectric film is gradually increased from an attachment surface in the thickness direction; the fiber having the core-shell structure comprises: a core layer having a porous structure and containing modified molybdenum disulfide and polyester; the shell layer wraps the core layer, and the shell layer contains collagen; the piezoelectric film comprises a sensing unit area and a flexible connection area, the collagen crosslinking degree of the sensing unit area is larger than 75%, and the collagen crosslinking degree of the flexible connection area is 40%-55%. Under the synergistic effect of materials and structures, the piezoelectric film not only has a high piezoelectric constant, but also shows excellent mechanical properties, air permeability and moisture penetrability, and has wide application prospects in the fields of electronic skin, health monitoring and the like.

The present invention relates to a piezoelectric thruster comprising: - a set of identical piezoelectric elements by way of a battery (5) of polarised piezoelectric discs (2) alternately arranged relative to conductive electrodes (1), the piezoelectric discs and the electrodes (1) being bonded by an epoxy resin (3); - two parts, a smaller part (6) and a larger part (7) between which the batteries (5) are arranged by applying pressure, and the piezoelectric discs exhibiting a high quality factor Q and a high piezoelectric constant d33; - a power supply source (21) capable of providing an alternating current wave form, wherein the wave form exhibits two sinusoidal components with different frequencies. A piezoelectric thruster is thus obtained, exhibiting very low energy loss due to thermal effects, wherein maximum power is delivered to the piezoelectric material, the piezoelectric materials having a high mechanical excursion.

The present invention addresses the problem of providing: a piezoelectric laminate including a piezoelectric thin film having improved piezoelectric performance; a piezoelectric element; and a method for manufacturing the piezoelectric laminate. The piezoelectric laminate includes: a substrate; and a laminated film provided on at least one surface of the substrate, wherein the laminated film includes, in order from the substrate side, an electrode layer, an underlayer, and a piezoelectric thin film. The underlayer and the piezoelectric thin film are in contact with each other, the underlayer contains a nitrogen compound including at least one element selected from the group consisting of group III to VI elements, and the absolute value |e31 f| of the piezoelectric constant of the piezoelectric thin film is 0.5 C / m2 or more.

This invention discloses a piezoelectric ceramic, its preparation method, and its applications. The preparation method of the piezoelectric ceramic includes: mixing Pb, Zr, Ti, Nb, Zn, Ni, Mg, and W sources until homogeneous; pre-firing the mixture at 800-850°C in air to obtain a pre-fired material; mixing Li₂CO₃ with the pre-fired material until homogeneous to obtain a piezoelectric ceramic material; granulating the mixture; pressing it into shape; sintering it at 900-950°C in air; and polarizing it in silicone oil to obtain the piezoelectric ceramic. This invention constructs a piezoelectric ceramic with a composite perovskite structure through doping with Zn, Ni, Nb, Mg, and W. The piezoelectric ceramic of this invention has a high Curie temperature and piezoelectric constant. The high Curie temperature allows it to maintain good piezoelectric properties at higher temperatures.

The invention relates to the field of functional ceramic materials, and provides BaZrO3 doped KNN-based leadless piezoelectric ceramic and a preparation method thereof in order to solve the problem that the piezoelectric property of the leadless piezoelectric ceramic is poor. The general formula of the piezoelectric ceramic is (100-x) (K < 0.49 > Na < 0.49 > Li < 0.02 >) (Nb < 0.8 > Ta < 0.2 >) O < 3-x > BaZrO < 3 + y > wt% MnO, x is greater than or equal to 2 and less than or equal to 5, and y is greater than 1 and less than 3. The invention also provides a preparation method of the piezoelectric ceramic, which comprises the following steps: carrying out primary ball milling, pre-sintering, secondary ball milling and calcining on the raw materials, and adding MnO to carry out third ball milling; pressing the obtained mixed powder into a ceramic rough blank, and sequentially carrying out primary sintering, grinding, polishing, silver electrode coating and secondary sintering; and carrying out polarization treatment on the obtained ceramic wafer. The inverse piezoelectric constant of the piezoelectric ceramic can reach 476 pm / V at room temperature, and the piezoelectric ceramic also has excellent temperature stability and fatigue resistance.