8results about How to "Piezoelectric constant" patented technology

The utility model provides an ultrasonic temperature sensor and a temperature sensing rod, and relates to the technical field of temperature sensors, the ultrasonic temperature sensor comprises an anti-corrosion layer, a crystallization induction layer, a piezoelectric function layer, a protection layer and an electrode layer which are arranged on the surface of a substrate in sequence from inside to outside, and the piezoelectric function layer is a ZnCoO coating. The ultrasonic sensor has the advantages that the ultrasonic sensor is made of sputtering type ZnCoO piezoelectric composite film materials, the protective layer is made of corrosion-resistant and high-temperature-resistant aluminum oxide, and the preparation process is easy to engineer.

The invention relates to the technical field of piezoelectric ceramic materials, in particular to potassium-sodium niobate-based lead-free ceramic suitable for high-power devices and a preparation method, the chemical general formula of the potassium-sodium niobate-based lead-free ceramic is 0.96 (K < 0.45 > Na < 0.55 >) NbO < 3-0.04 > Bi < 0.5 + x > Na < 0.5 > ZrO < 3-0.005 > CuO, and x is one of 0, 0.03, 0.05, 0.08 and 0.10. According to the potassium-sodium niobate-based lead-free ceramic suitable for the high-power device and the preparation method, the potassium-sodium niobate-based lead-free ceramic has excellent comprehensive electrical properties including high piezoelectric constant, high quality factor, high Curie temperature and low dielectric loss, and is suitable for being applied to high-power electronic equipment.

The invention discloses a preparation method of a high-performance titanium dioxide film, which comprises the following steps: firstly, preparing titanium dioxide colloid by using a sol-gel method, and adding an anionic surfactant sodium 1-octanesulfonate in the process of preparing TiO2 sol to increase the repulsive force among colloid particles so as to prevent the colloid particles from gathering and settling and improve the stability of the colloid; and then selecting a silicon wafer with a P-type (100) crystal face as a bottom selection, spin-coating, and carrying out heat treatment to obtain the titanium dioxide film. The silicon wafer has high carrier (electron and hole) mobility, so that the conductivity of the material is improved; the structure has high flatness and lattice parameter consistency, and the repeatability in the preparation process is improved. The preparation method is convenient to operate, simple in equipment and low in cost, and the prepared titanium dioxide film is high in stability, tight in combination with the substrate, high in piezoelectric constant and outstanding in catalytic performance and has wide application prospects in the fields of sensors, environmental pollution control and artificial intelligence.

The invention provides a multilayer piezoelectric electret film element. By adjusting the pore gap and dielectric strength of a polymer porous sheet in the multilayer piezoelectric electret film element, it is ensured that the gas can be ionized without damaging the polymer porous sheet. After being subjected to electric polarization and surface metallization treatment, the multilayer piezoelectric electret film element has a higher piezoelectric constant and can generate significant charge when subjected to mechanical pressure, thereby showing high sensitivity in applications such as piezoelectric sensors, thereby solving the problems of low piezoelectric activity of the polymer piezoelectric electret film element in the prior art, and rapid loss of piezoelectric activity after polarization. The production process is simple, and continuous production of the polymer piezoelectric electret film element can be guaranteed.

The application provides an ultrasonic transducer, a preparation method thereof and an electronic device. The preparation method of the ultrasonic transducer comprises the following steps: coating a piezoelectric polymer solution on a first electrode, drying under the condition that the relative humidity is less than 30%, and forming a piezoelectric film; sequentially performing crystallization and polarization on the piezoelectric film, and forming a piezoelectric layer; and forming a second electrode on the piezoelectric layer, so as to obtain the ultrasonic transducer. Through the preparation process, the transparency and piezoelectric constant of the formed piezoelectric layer can be improved, and the performance of the ultrasonic transducer is optimized.

A fluoropolymer resin piezoelectric film has a retardation of 100 nm or more and 2000 nm or less, an internal haze of less than 1.7%, and a piezoelectric constant d measured at 21 measurement points determined along the fast axis. 33 The average value is above 6.0 pC / N and below 40.0 pC / N, and the piezoelectric constant d 33 The standard deviation is below 2.0 pC / N.

The invention relates to the technical field of piezoelectric ceramics, and particularly discloses a high-performance lead titanate piezoelectric ceramic and a preparation method thereof. The molecular formula of the high-performance lead titanate piezoelectric ceramic is Pb (1-x) Ax Ti (1-y) ByO3, A is at least one of Pb < 2 + >-substituted Ca < 2 + >, Ba < 2 + >, Sr < 2 + >, La < 3 + > and Sm < 3 + >, and B is at least one of Ti < 4 + >-substituted Co < 3 + >, Nb < 5 + >, W < 6 + > and Mo < 6 + >; wherein 0.1 < x < = 0.3, 0 < y < = 0.08; the lead titanate piezoelectric ceramic is modified through niobium, calcium, cobalt, tungsten and other elements, the electromechanical coupling coefficient and piezoelectric constant of the piezoelectric ceramic are improved, and the thickness direction is gt; gt; therefore, the resolution ratio and the piezoelectric property of the piezoelectric ceramic are improved.

This invention relates to an Sm ion-doped PZT-based piezoelectric ceramic material, represented by the following general chemical formula: Pb 1‑y Ga y (Zr 1‑z Ti z ) m Ta 1‑m O3+xwt%Sm, where x=0.05~1.05, xwt% represents the percentage content of Sm in the total mass of the piezoelectric ceramic material; y=0.015~0.025, z=0.45~0.50, m=0.95~0.98. Sm ion-doped PZT-based piezoelectric ceramic powder was prepared by solid-state reaction method, and then piezoelectric ceramic materials with high Curie temperature, high piezoelectric constant, and high dielectric constant were prepared by combining processes such as pressing, debinding, sintering, silver coating, and polarization. The results show that the Curie temperature Tc of the piezoelectric ceramic material of this invention is greater than 380℃, while the dielectric constant is greater than 900, and the piezoelectric constant d... 33 Greater than 300 pC / N.