138 results about "Zero temperature" patented technology

An internal power supply circuit produces an internal power supply voltage from an external power supply voltage. A voltage level control circuit controls a voltage level and a temperature characteristic of the internal power supply voltage generated by the internal power supply circuit. The internal power supply circuit produces the internal power supply voltage having a negative or zero temperature characteristic in a low temperature region and a positive temperature characteristic in a high temperature region. The voltage level control circuit includes a structure optimizing a capacitance value of a sense power supply line stabilizing capacitance for driving a sense amplifier circuit, a level converting circuit determining the lowest operable region of the external power supply voltage of the internal power supply circuit, or a structure forcedly operating the internal voltage down converter upon power-on. The internal power supply voltage at a desired level is stably produced with a small occupied area and a low current consumption.

The invention relates to a novel purified isozyme of an autoclavable superoxide dismutase extracted from the plant Potentilla atrosanguinea Lodd. Var. orgyrophylla, said isozyme having the following characteristics, O2- scavenging activity remains same before and after autoclaving; scavenges O2- from sub-zero temperature of -20° C. to high temperature of +80° C.; O2- scavenging activity at 25° C. for 30 days without adding any stabilizing agent such as polyols or sugars; O2- scavenging activity in the presence of saline (0.9% sodium chloride) to 61.8% of the control (without 0.9% sodium chloride), stable at 4° C. for at least 8 months; contamination free and infection free from any living micro- and/or macro-organism after autoclaving; possesses temperature optima at 0° C.; possesses a molecular weight of 33 kD under non-denaturating conditions; possesses a molecular weight of 36 kD under denaturating conditions; has clear peaks in UV range at 268 and 275 nm; has an enzyme turnover number of 19.53x104% per nmol per min at 0° C.; and requires Cu/Zn as a co-factor, method for the preparation of the purified isozyme of autoclavable superoxide dismutase and formulations containing the said autoclavable superoxide dismutase.

The invention is a foam blend comprising a polyethylene, polypropylene, and a rubber component. The foam blend has improved flexibility at sub-zero temperatures without sacrificing the desirable physical characteristics that are commonly associated with polypropylene foams. As a result, the foam is particularly useful for producing articles that require flexibility at temperatures approaching and below 0° F. In some embodiments, the foam blend may have at least 50 percent by weight polypropylene and up to about 45 percent by weight polyethylene. The rubber component in the blend may be from about 3 to 10 weight percent, with 5 weight percent being particularly useful. The foam blends are suitable for producing a variety of articles where it is desirable to have improved flexibility at cold temperatures. In a particularly useful application, the foam blend may be used in concrete expansion joint fillers or totes.

The resorbable cryoprobe device and process is a novel approach for treating localized disease allowing for the precise combined application of freezing temperatures and cytotoxic or cryosensitizing agents within a self-contained matrix/package for optimized tissue destruction. The cryopellet is comprised of a list of components including a source of cryogen to produce the sub-zero temperatures, a porous matrix to contain the cytotoxic agent, cytotoxic agent, and a delivery packet. Data presented herein demonstrates the efficacy of this approach in destroying cancerous tissue. For example, the application of freezing temperatures to −10° C. results in approximately 15% cell death, while exposure to cytotoxic agents such as TRAIL produces minimal cell death. The utilization of the cryopellet approach results in a synergistic effect yielding complete cell death at the same temperature. The innovation behind the resorbable probe application includes the strategic combination of agents to activate intrinsic or extrinsic cell death responses (including apoptosis and necrosis), unique packaging of the cryogen and cytotoxic agent, and a unique delivery system. The resorbable cryoprobe technology will assist directly in the treatment of cancer, as well as will likely lead to broader application for disease treatment.

The invention is the project realizing method of fiber top inertia measuring device fast starting and precision guarantee, which adopts the temperature demarcating system to detect the temperature mode; found the module of the affirming parts of the fiber top and the quartz accelerator and effectively reduce the zero-bias brought by the temperature; implement small-wave transforming procession to the fiber top noises and make the stability of the zero-bias be better than 0.5 Deg./h and the zero-bias error be smaller than 10 to power 4 g. The invention effectively reduces the zero temperature floating and noises and improves the performance of the system.

A high shunt regulator provides precise voltage over process, temperature, power supply, and foundries. The HV level is settable by a digital control bits such as fuse bits. A filter network filters out the ripple noise and charge transient. A tracking capacitor divider network speeds up response time. A fractional band gap reference provides fractional bandgap voltage and current, and operates at low power supply and has superior power supply rejection. It is unsusceptible to substrate hot carrier effect. It exposes very little to drain induced barrier lowering effect. The bandgap core has better than conventional transient response and stability. One embodiment has adjustable level control. Complementary TC (temperature coefficient) trimming allows efficient realization of zero temperature coefficients of current and voltage. Higher order curvature correction of voltage and current is integrated. Replica bias for the control loop is presented. A Binary and Approximation Complementary TC search trimming is described. A zero TC fractional voltage less than the theoretical bandgap voltage (<<−1.2. Volt) is realizable. The bandgap core has a filtering mechanism to reject high frequency noise. A low power startup circuit powers up the band gap. The band gap also has variable impedance.

This invention disclosed a low-temperature film pressure sensor which consists of take-over neb, film slice, film, transfer seat, hull and jack. The film contains transition layer, insulation layer, resistance layer, compensate resistance layer and weld layer. The manufacture technique was as follows: choose a film, set transition layer, insulation layer, resistance layer, compensate resistance layer and weld layer on this film, photoengrave to obtain weld plate, temperature compensate resistance, zero temperature compensate resistance, strain rosette and zero compensate resistance, modify the value in the above resistance using laser modifying method, assemble the sensor. This invention shows high efficiency and precision.

This invention relates to a set of aqueous marker compositions, each composition having a selected 1/Ti value which is substantially invariant over an at least 10° C. temperature range between 15 and 40° C. and preferably over an at least ±2% magnetic field strength range about a selected field strength value between 0.01 and 5T and comprising an aqueous matrix material having a non-zero 1/Ti temperature dependence within said temperature range with distributed therein a first paramagnetic material having a Ti relaxivity which is substantially invariant within said range(s) and/or a second paramagnetic material having within said ranges(s) and T1 relaxivity which has a non-zero temperature dependence of opposite polarity to the temperature dependence of 1/Ti of said matrix material, said set containing a plurality of said compositions with different selected 1/Ti values preferably encompassing at least the range 1.0 to 2.5 s-1, said set preferably comprising at least one said composition containing said second paramagnetic material and at least one said composition containing said first paramagnetic material, where i in Ti is 1 or 2.

The MEMS piezoresistive pressure sensor chip is one cup-shaped structure including one squared pressure-sensing film, peripheral support and four piezoresistors, which are in the maximum strain area of the pressure-sensing film constitute point bridge to sense pressure change. The piezoresistors are made by ion implantation technology and there is a circle of n+isolating area around each piezoresistor and aligning mark in the edge of the pressure-sensing film to monitor the thickness of the pressure-sensing film. Compared with conventional diffusion technology, the ion implantation technologyhas higher piezoresistor precision, lower zero input and lower zero temperature drift. The increased n+isolating area raises the long-term stability of chip, and the aligning mark makes the etching of the sensing film more controllable.

[Summary]

[Object] To provide a hydrophilic porous layer for a fuel cell that improves a sub-zero temperature starting ability of the fuel cell.

[Solving means] A hydrophilic porous layer comprising electrically conductive material—hydrophilic material aggregates each including hydrophilic materials and electrically conductive materials that intimately contact to one another, the hydrophilic materials being mutually connected to one another to form in the hydrophilic materials a continuous transport path for water, the electrically conductive material—hydrophilic material aggregates forming therebetween a transport path for water vapor, which is characterized in that when it is above −40° C., a water transport resistance R_water of the water transport path is larger than a water vapor transport resistance R_gas of the water vapor transport path.

The invention discloses a signal-digit converter of a low-temperature drift rotary transformer. The signal-digit converter is characterized by consisting of a sine and cosine multiplier, an error amplifier, a phase-sensitivity demodulating and phase discriminating device, a voltage-controlled oscillator, a 12-bit reversible counter, a latch, an incremental codec and a serial interface. In the invention, a linear compatible CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process is used; and by adopting a temperature self-compensated bootstrap mirror image current reference source, the invention realizes the output of reference current which is irrelative with mains voltage and near-zero temperature drift near 300K. The sampling precision can be improved by adopting a CMOS switch capacitance technology. All peripheral assemblies are integrated inside an integrated circuit and the most tidy pin definition is formed, so that track conversion from the angle to digital quantity can be realized without extra assemblies. The low-temperature drift can be realized by adopting a zero temperature drift reference source. The wide work frequencies of an input signal and a reference signal can be realized by adopting a dynamic time-delay technology. The high track speed can be realized by adopting a technology of high performance operational amplifier, switch and linear combination and high-speed dynamic parameter design.

A SiC Power Semiconductor device of the Field Effect Type (MOSFET, IGBT or the like) with “muted” channel conduction, negative temperature coefficient of channel mobility, in situ “ballasted” source resistors and optimized thermal management of the cells for increased Safe Operating Area is described. Controlling the location of the Zero Temperature Crossover Point (ZTCP) in relationship to the drain current is achieved by the partition between the “active” and “inactive” channels and by adjusting the mobility of the carriers in the channel for the temperature range of interest. The “Thermal management” is realized by surrounding the “active” cells/fingers with “inactive” ones and the “negative” feedback of the drain/collector current due to local increase of the gate bias is achieved by implementing in-situ “ballast” resistors inside of each source contact.

The invention belongs to the field of new materials and microwave communication, and particularly relates to a microwave dielectric ceramic material as well as a preparation method and application thereof. The principal crystalline phase of the microwave medium ceramic material adopts the structure of xCaTiO3-(1-x)ReAO3; Re refers to at least one of La, Ns and Sm, and A refers to at least one of Al and Ga; x is less than or equal to 1 and is greater than or equal to 0; the microwave dielectric ceramic material further comprises a modified additive. According to the invention, the microwave dielectric ceramic material is prepared through steps of compounding, sanding, presintering and adding the modified additive, sanding, pelletizating, pressing for formation and sintering. The material has the characteristics of low cost and excellent microwave dielectric property, is high in electric inductivity, high in Q, has a frequency temperature coefficient close to zero temperature excursion and is continuously adjustable in accessories within a certain range, and can be used for manufacturing microwave components such as dielectric resonators, all-dielectric filters, cavity filters, antennas and the like in a communication system.

An apparatus and method for controlling a control valve, and a method for controlling a discharge flow rate of a hydraulic pump for a construction machine are disclosed, which can control a spool shifting speed of a directional valve and a discharge flow rate of a hydraulic pump in accordance with a hydraulic fluid temperature in winter season with below zero temperatures. The apparatus for controlling a control valve includes a variable displacement hydraulic pump; a hydraulic actuator driven by hydraulic fluid that is supplied from the hydraulic pump; a control valve installed in a flow path between the hydraulic pump and the hydraulic actuator and shifted to control a start, stop, and direction change of the hydraulic actuator; an operation lever outputting an operation signal corresponding to an operation amount; a temperature sensor detecting a hydraulic fluid temperature of a hydraulic fluid tank connected to the hydraulic pump; and a controller applying a control signal that corresponds to the operation amount of the operation lever 3 to the control valve if the hydraulic fluid temperature detected through a signal from the temperature sensor is higher than a predetermined temperature, and adjusting the operation signal according to the operation amount of the operation lever in a predetermined increment rate to correspond to the detected hydraulic fluid temperature and applying the adjusted control signal to the control valve if the hydraulic fluid temperature detected through the signal from the temperature sensor is lower than the predetermined temperature.

The invention discloses a CMOS subthreshold reference circuit with low power consumption and low temperature drift and belongs to the technical field of power management. The CMOS subthreshold reference circuit comprises a start-up circuit, a negative temperature coefficient voltage generator circuit and a positive temperature coefficient voltage generator circuit. The start-up circuit enables the grid end of a first NMOS transistor to be pulled up at the initial stage of the reference circuit so that the circuit is out of the zero state and begins to work normally, and after that, the start-up circuit quits. The negative temperature coefficient voltage generator circuit extracts the threshold voltage VTHN of the NMOS transistor and takes the threshold voltage VYHN as the negative temperature coefficient voltage. The positive temperature coefficient voltage generator circuit utilizes the MOS transistor having equal drain source and different width-to-length ratio and working at the subthreshold region to generate positive temperature coefficient voltage. The positive temperature coefficient voltage and the negative temperature coefficient voltage output from the negative temperature coefficient voltage generator circuit are superposed to output reference voltage VREF. The reference circuit has the characteristic of approximating zero temperature within a certain temperature range and can realize ultra-low power consumption at mu W order.

The invention relates to a CMOS sub-threshold reference circuit with low power consumption and low temperature drift, and belongs to the technical field of power management. The circuit comprises a starting circuit, a negative temperature generating circuit and a reference voltage output circuit, the starting circuit prevents the whole circuit from remaining in a zero state when a power supply is built, and the starting circuit is switched off after completing; the negative temperature generating circuit generates a muT2 current through a NMOS tube threshold voltage VTH, wherein mu is the drift mobility, and the muT2 current is input into an NMOS tube to generate negative temperature coefficient voltage with positive temperature compensation; the negative temperature coefficient voltage with positive temperature compensation which is output by the negative temperature generating circuit is superimposed on the positive temperature coefficient voltage which is generated by the reference voltage output circuit, and a reference voltage VREF is obtained. According to the CMOS sub-threshold reference circuit, the obtained reference voltage VREF can reach the characteristic which is similar to the zero temperature in the temperature range of 55-110 DEG C; ultralow power consumption of muW magnitude is achieved.

The invention discloses a modularized portable semiconductor air conditioner and belongs to the field of refrigeration air conditioners. The modularized portable semiconductor air conditioner is mainly composed of a lithium battery (1), a protective tube (2), a teleswitch (3), a water pump (4), a water wall (5), a fan (6), a semiconductor refrigerating sheet (7), cold end fins (8), a temperature controller (9), a water tank (10), a heat conduction pipe (11), a heat storage tank (12) and a high temperature detector (13). The modularized portable semiconductor air conditioner adopts the semiconductor refrigeration technology, a cold end is separated from a hot end, and needed low-temperature airflow can be provided finally, even the air with the temperature being lower than the zero temperature can be provided. As for the individual small utilization air conditioner, the demand of people for the comfort environment can be met, and the air conditioner can be carried conveniently due to the small size and low weight of the air conditioner. In addition, the air conditioner utilizes the modularized design technology, and functions can be perfected by increasing or reducing modules according to the using demands of users.

General speaking, a resistor of high resistivity has a negative-temperature-coefficient and a resistor of low resistivity has a positive-temperature-coefficient. Utilizing this characteristic, an appropriate proportion between the above resistors can be found to make a combined resistor with an approximate zero-temperature-coefficient. The combined resistor can be used to design a circuit for generating voltage and current with approximate zero-temperature-coefficients.

The invention discloses a zero-temperature coefficient reference voltage generation circuit for a three-dimensional storage. The zero-temperature coefficient reference voltage generation circuit comprises a starting circuit, a current generating circuit and a voltage generating circuit, wherein the starting circuit, the current generating circuit and the voltage generating circuit are connected in sequence, the starting circuit is used for guaranteeing that the zero-temperature coefficient reference voltage generation circuit can work normally after being powered on, the current generating circuit is used for generating a current of negative temperature coefficients, the current with the negative temperature coefficient is unrelated to a supply voltage, and the voltage generating circuit is used for generating a reference voltage of zero temperature coefficients according to the current of the negative temperature coefficients. The zero-temperature coefficient reference voltage generation circuit for the three-dimensional storage has the advantages of being simple in structure, easy in achievement mode, low in power consumption and free of influence by the supply voltage and having the zero temperature coefficients.

The fiber optic gyro strapdown inertial measurement device sets temperature measurement sensors inside three fiber optic gyroscopes and three quartz accelerometers, and performs zero temperature compensation on them by measuring the temperature changes of the fiber optic gyroscopes and quartz accelerometers, among which: the fiber optic gyroscope zero position The temperature compensation model is: Bf=KT0+KT1(T-T0), the quartz accelerometer zero temperature compensation model is: Ba=KaT0+KaT1(T-T0)+Kat2(T-T0)2 so that the measuring device can Working in the full temperature range, it avoids the disadvantages of the long thermal balance time of the temperature control scheme in the existing technology measuring device, so as to realize fast startup, and the full accuracy can be achieved within 3-5s after power-on; in addition, due to the use of FPGA-based fiber optic gyroscope On the one hand, the calculation speed and reliability of the gyroscope are greatly improved, and on the other hand, the size and weight of the gyroscope are reduced, which can especially meet the requirements of miniaturization and light weight of the weapon system.