CMOS subthreshold reference circuit with low power consumption and low temperature drift

A reference circuit, low temperature drift technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of low performance of reference sources, difficult to achieve the requirements of low-power reference sources, and achieve ultra-low power consumption Effect

Inactive Publication Date: 2017-11-24
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] However, traditional bandgap reference sources are difficult to meet the requirements of low-power reference sources due to the limitation of BE junction voltage; non-bandgap reference so

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  • CMOS subthreshold reference circuit with low power consumption and low temperature drift
  • CMOS subthreshold reference circuit with low power consumption and low temperature drift
  • CMOS subthreshold reference circuit with low power consumption and low temperature drift

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Embodiment Construction

[0028] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0029] The system topology diagram of the CMOS sub-threshold reference circuit proposed by the present invention is as follows figure 1 As shown, it consists of three parts: start-up circuit, negative temperature coefficient voltage V CTAT generating circuit and positive temperature coefficient voltage V PTAT Generating circuit, where the output terminal of the start-up circuit is connected to the negative temperature coefficient voltage V CTAT Generating the control terminal of the circuit, the negative temperature coefficient voltage V CTAT The generation circuit extracts the threshold voltage V of the NMOS transistor THNas a negative temperature coefficient voltage. Negative Temperature Coefficient Voltage V CTAT The output terminal of the generating circuit is connected to the positive temperature coefficient voltage V PTAT generates...

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Abstract

The invention discloses a CMOS subthreshold reference circuit with low power consumption and low temperature drift and belongs to the technical field of power management. The CMOS subthreshold reference circuit comprises a start-up circuit, a negative temperature coefficient voltage generator circuit and a positive temperature coefficient voltage generator circuit. The start-up circuit enables the grid end of a first NMOS transistor to be pulled up at the initial stage of the reference circuit so that the circuit is out of the zero state and begins to work normally, and after that, the start-up circuit quits. The negative temperature coefficient voltage generator circuit extracts the threshold voltage VTHN of the NMOS transistor and takes the threshold voltage VYHN as the negative temperature coefficient voltage. The positive temperature coefficient voltage generator circuit utilizes the MOS transistor having equal drain source and different width-to-length ratio and working at the subthreshold region to generate positive temperature coefficient voltage. The positive temperature coefficient voltage and the negative temperature coefficient voltage output from the negative temperature coefficient voltage generator circuit are superposed to output reference voltage VREF. The reference circuit has the characteristic of approximating zero temperature within a certain temperature range and can realize ultra-low power consumption at mu W order.

Description

technical field [0001] The invention belongs to the technical field of power management, and in particular relates to the design of a sub-threshold MOSFET-based ultra-low power consumption and low-temperature drift reference generation circuit. Background technique [0002] The reference voltage source is an extremely important part of analog integrated circuits and digital-analog hybrid circuits, and is widely used in power converters, power amplifiers, digital-to-analog converters and other circuits. The function of the reference voltage source is to provide a voltage reference independent of temperature and power supply voltage for the circuit. As the power supply voltage continues to drop, it is critical to design a reference source with low voltage, low power consumption, and low temperature coefficient. Mobile electronic devices have higher and higher requirements on power consumption, so that the power supply voltage of the reference voltage source should be able to ...

Claims

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Application Information

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IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 周泽坤汪尧王韵坤马亚东石跃王卓张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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