31 results about "Drift current" patented technology

The invention provides a band-gap reference current generation circuit for soft start and a working method thereof, and belongs to the technical field of integrated circuit design. Comprising a starting circuit module and a band-gap reference current generation module, the output end of the starting circuit module is connected with the input end of the band-gap reference current generation module, and the starting circuit module and the reference current generation module are coupled through a bias current path and are automatically turned off after reference current is established; the reference current generation module comprises a bipolar transistor and a resistor, and a temperature compensation path is formed through the bipolar transistor and the resistor to generate temperature compensation current. A bias current path coupling and automatic turn-off mechanism is adopted, so that the degenerate state problem is effectively avoided, and reliable starting of the circuit is ensured; through a temperature compensation path formed by a bipolar transistor and a resistor, and in combination with a programmable trimming resistor network, temperature coefficients of VBE and VT are accurately counteracted, wide-temperature-range low-temperature-drift current output is realized, the system stability is remarkably improved, and the number of devices is reduced.

The invention discloses a programmable low-temperature-drift under-voltage locking circuit, and the circuit comprises a reference current generation module which is used for outputting an initial reference current, and the input end of the reference current generation module is connected with a first reference voltage; the zero-temperature-drift current source array is used for generating reference current according to the initial reference current and the second reference voltage and mirroring the reference current to a plurality of parallel branches; the trimming module is used for adjusting the total current of the parallel branches by using a programmable resistor and a capacitor; the sampling module is used for sampling the total current and the power supply voltage of the parallel branches output by the trimming module; and the comparison output module is used for comparing the power supply voltage with a sampling voltage generated according to the programmable resistor and the total current of the parallel branches, and outputting a pair of differential signals. Through the reference current generation module, the zero-temperature-drift current source array, the trimming module, the sampling network and the voltage comparator, the problems that in an existing resistance voltage division type undervoltage locking scheme, a threshold value is fixed and cannot be adjusted, and the scheme is sensitive to temperature changes are solved.

The present application relates to a current determination method, a current determination apparatus, a storage medium and an electric system. The method comprises: on the basis of temperature distribution data and a preset zero-drift compensation model, determining a zero-drift current compensation value corresponding to the temperature distribution data, wherein the temperature distribution data is used for reflecting the temperature distribution situation of a current sensor in an electric circuit, the temperature distribution data comprises temperature values of the electric circuit at a plurality of sampling parts, at least some of the sampling parts are located on the current sensor, and the zero-drift compensation model represents a correspondence between the temperature distribution data and the zero-drift current compensation value.

The object of the present invention is to provide a Brokaw reference circuit for simultaneously adjusting low-temperature-drift voltage and low-temperature-drift current. The circuit includes: at least one current amplification branch; the input end of the current amplification branch is connected to the drain of the first MOS transistor, and the output end is grounded through a resistor for adjusting the low-temperature-drift current; a plurality of the current amplification branches are connected in parallel. The topological structure of the present invention is simple. Only by adjusting the corresponding resistance value according to actual requirements, the bias voltage with the required low-temperature-drift coefficient can be obtained.

The present invention discloses a hybrid dimming system for light emitting diodes, which relates to the technical field of light emitting diode dimming. The system comprises: a mode conversion module, a current reference module, a PWM processing module and a current driving module; the mode conversion module is mainly responsible for processing the structure switching between exponential dimming and linear dimming. 2 The C dimming code is input by this module. The present invention realizes high-precision LED current driving by combining the PTAT current or CTAT current generated by the current reference module with a feedback loop composed of a precision resistor and an operational amplifier. In particular, in the zero-temperature drift LED current driving realized in an analog manner, the system adopts a zero-temperature drift current source, which effectively offsets the influence of temperature changes on the LED current and ensures the stability and consistency of the LED current. This design not only improves the stability and reliability of LED light emission, but also extends the service life of the LED and reduces the risk of light decay and failure due to current fluctuations.

The invention discloses a low-temperature-drift hysteresis voltage comparator, relates to the technical field of stepping motors, and is used for solving the problem that in the prior art, the hysteresis voltage of a comparator is increased due to large temperature change of a stepping motor driving circuit, and then current control of a stepping motor is affected. Comprising a negative temperature excursion current generation module, a positive temperature excursion current generation module, a zero temperature excursion current generation module, a current operation module and a cross coupling comparison module. The cross-coupling comparison module is used for generating a hysteresis voltage based on a comparison result of the input voltage and the reference voltage; the current operation module performs weighted operation on the current generated by the negative temperature drift current generation module, the positive temperature drift current generation module and the zero temperature drift current generation module, and outputs compensation current; the compensation current is provided to the tail current source of the cross-coupling comparison module and is used for modulating the output impedance of the tail current source so as to compensate the temperature drift of the hysteresis voltage.

The present invention proposes a method and circuit for generating a high-precision second-order temperature coefficient compensation current, wherein a V-type first-order temperature drift current generation circuit is used to generate a V-type first-order temperature drift current, and the circuit includes: a current mirror PM1 / PM2, switches S2, S3, NMOS tubes NM1, NM2, NM3, a current source I BG , current source I PTAT , current source I S1 , transistors Q7, Q8, hysteresis comparator COMP. Also includes a method to make the V-type first-order temperature drift current I V The circuit for generating a second-order temperature drift coefficient compensation current generates a high-precision second-order temperature coefficient compensation current, the circuit comprising: PMOS tubes PM3, PM4, NMOS tubes NM4, NM5, NM6, current source Iv, current source I BG , current source I S2 , current source I S3 , transistors Q1, Q2, Q3, Q4, Q5, Q6. Accurate compensation for the second-order temperature drift of the sensor or voltage reference or current reference is achieved.

A high-current drift transistor (HSDT) with low losses is to be realized by having electrons with energies E <EF-kBT (EF=Fermi-Energie, kB=Boltzmann-Konstante, T=Temperatur) eines völlig gefüllten Leitungsbands eines zweidimensionalen Elektronengases (2DEG) der Dimensionen Lx·Ly in der x-y-Ebene einem Magnetfeld Bz und elektrischen Feldern Ex und Ey ausgesetzt werden, was sie alle auf eine Driftgeschwindigkeit vD in der x-y-Ebene zwingen soll. Der resultierende elektrische Driftstrom kann sehr groß werden, da er widerstandlos ist, denn die beteiligten Elektronen können nicht durch Streuung an Fehlstellen, Verunreinigungen oder Phononen gestört werden, da alle möglichen Endzustände dieser Prozesse durch andere Elektronen besetzt sind. Damit kann der HSDT sehr große elektrische Leistungen im kW-Bereich steuern.

The invention relates to the technical field of electrical measurement, in particular to a measurement method and system of a mutual inductor magnitude traceability device, electronic equipment and a medium. The method comprises the following steps: firstly, acquiring initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation mode; applying a contact pressure adjustment amount to the measurement loop contact point; acquiring compensation monitoring information after the contact pressure adjustment amount is applied; and finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stability range according to the compensation monitoring information and a rated measurement current accuracy technical index, and taking the optimal working current range, the corresponding pressure value interval and the contact resistance stability range as an operation basis of the transformer magnitude traceability device in a subsequent measurement process. In this way, the technical problem that in the prior art, it is difficult to synergistically improve the stability of a measurement loop and the traceability precision is solved, and the measurement stability, accuracy and adaptability of the mutual inductor magnitude traceability device are improved.

This invention discloses a method, apparatus, device, and storage medium for determining zero-drift current. The method includes: acquiring the voltage curve of the power circuit when the current is zero during the power-on phase, measured by a sensor; sampling the voltage curve to determine a sequence of estimated zero-drift current values; using the estimated zero-drift current values ​​in the sequence to determine the median zero-drift current estimate and the average zero-drift current estimate; under a first condition, using the median zero-drift current estimate as the zero-drift current; and under a second condition, using the average zero-drift current estimate as the zero-drift current. Using the proposed method, the zero-drift current can be accurately determined. Furthermore, this method is applicable to zero-drift compensation in different scenarios, exhibiting strong versatility.

The present invention discloses an ion-electron coupling thermoelectric material and a preparation method thereof, belonging to the technical field of new thermoelectric materials. The thermoelectric material is prepared by coupling an ion-electron conductor material and an ionic liquid phase material, and its carriers are ions and electrons. The output voltage mainly comes from the voltage generated by ion thermal diffusion, and the output current mainly comes from the drift current in the electronic conductor caused by ion thermal diffusion. The output power of the thermoelectric material provided by the present invention is several orders of magnitude higher than that of the existing ionic thermoelectric material, which solves the problem that the current ionic thermoelectric material has low output power and cannot be applied. It can power daily electronic components without supercharging, so that the thermoelectric material reaches the application level; it shows great potential in low-grade heat energy recovery close to room temperature, its preparation raw materials are widely available, cheap and easy to obtain, the preparation method is simple and easy to operate, and it has strong commercial value.

The application provides a hybrid conduction mechanism surrounding gate transistor, which comprises a surrounding gate MOSFET device, a second source region and a second drain region; the surrounding gate MOSFET device comprises a substrate, a first source region and a first drain region; the first source region and the first drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, and the height of the second source region and the second drain region is not lower than the height of the substrate between the first source region and the first drain region; the second drain region is doped with the first ions, and the second source region is doped with second ions. The technical scheme solves the problem of bottom parasitic channel current leakage of the surrounding gate MOSFET device, and by additionally arranging the second source region and the second drain region, a tunneling field effect transistor (TFET) device structure is connected in parallel at the bottom of the traditional surrounding gate MOSFET device, so that the surrounding gate channel diffusion drift current and the bottom channel band-to-band tunneling current are hybridly conducted, and better super-steep switching characteristics are obtained.

The present application relates to the technical field of electrical measurement, and particularly relates to a measurement method and system of a mutual inductor value traceability device, an electronic device and a medium; the method comprises the following steps: firstly, obtaining initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation method; applying a contact pressure adjustment amount to the measurement loop contact point; obtaining compensation monitoring information after the contact pressure adjustment amount is applied; finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stable range according to the compensation monitoring information and a rated measurement current accuracy technical index, so as to serve as an operation basis of the mutual inductor value traceability device in a subsequent measurement process. In this way, the technical problem that the measurement loop stability and the traceability accuracy are difficult to be improved simultaneously in the prior art is solved, and the measurement stability, accuracy and adaptability of the mutual inductor value traceability device are improved.

This invention discloses an NPN-type adjustable low-temperature drift current reference circuit, comprising a startup circuit module and a current reference generation circuit module. The startup circuit module includes NMOS transistors M3, M4, M5, PMOS transistors M6 and M7, and resistor R3. The current reference generation circuit module includes PMOS transistors M1 and M2, NPN transistors Q1 and Q2, resistors R1 and R2. The NPN-type adjustable low-temperature drift current reference circuit provided by this invention reduces the temperature drift of the reference current, significantly improves the temperature coefficient, and enhances the accuracy of the current reference circuit. Furthermore, this invention only adds resistors to the circuit, making the circuit simple and easy to implement without requiring additional manufacturing processes, thus facilitating practical applications.

The invention relates to the technical field of semiconductor integrated circuits, in particular to a low-temperature drift current-limiting protection circuit applied to a linear voltage regulator, which comprises a two-way current sampling unit circuit, a transistor threshold offset unit circuit, a sampling resistance offset unit circuit, a current-limiting control unit circuit and a bias unit circuit. A traditional current-limiting protection circuit is improved, a two-way current sampling circuit is adopted to sample load current, and a sampling resistor offset circuit and a transistor threshold offset circuit are adopted to eliminate two factors influencing a current-limiting threshold in a temperature zone range, so that the current-limiting threshold is only related to two resistors of the same type; in actual use, accurate over-current operation of the linear voltage regulator can be achieved, over-current threshold drift in a temperature zone range can be reduced, and high-power device damage caused by the fact that the high-temperature lower limit current value is too high is avoided. The current regulator is widely applied to the field of heavy-load current linear voltage regulators.

A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.

The application discloses a method and system for selecting a regularization parameter in Hall drift technology and electronic equipment, and relates to the technical field of on-orbit operation state monitoring of Hall thrusters. The method comprises the following steps: constructing a target function, non-negativity constraints and zero boundary constraints of a Hall thruster; setting preset values of multiple regularization parameters under the premise of meeting the non-negativity constraints and the zero boundary constraints; inputting each preset value of the regularization parameter into the target function to obtain a solving value of a corresponding Hall drift current distribution column vector; calculating a value of a corresponding pseudo semi-norm and a value of a residual norm according to the solving value of each Hall drift current distribution column vector; drawing a pseudo semi-norm-residual norm curve based on the values of all pseudo semi-norms and residual norms; and determining a target value of the regularization parameter according to the pseudo semi-norm-residual norm curve. The application improves the accuracy of Hall drift current measurement results.

The application relates to a high-precision low-temperature drift Colpitts oscillator without an off-chip crystal oscillator and a calibration method, and belongs to the technical field of oscillators. The high-precision low-temperature drift Colpitts oscillator is characterized in that it comprises a zero-temperature drift current source, an adjustable reference voltage, a comparator, a latch, a PVT detection circuit and a temperature drift calibration circuit. The zero-temperature drift current source is generated by the current generated by the combination of a band-gap reference voltage and a zero-temperature drift resistor, and then the current is used for rough adjustment of the process angle deviation through more than one high-precision current mirror. The voltage of the zero-temperature drift current source and the adjustable reference voltage are sequentially input into the PVT detection circuit and the temperature drift calibration circuit, and then compared in the comparator, and finally output to the latch to generate an oscillation frequency. Finally, the high-precision low-temperature drift clock frequency is obtained by precisely adjusting the frequency through the current generated by the band-gap reference voltage and the high-precision resistor voltage dividing network. The application provides the high-precision low-temperature drift clock frequency which can replace the off-chip quartz crystal oscillator through rough adjustment and precise adjustment of the oscillator and further online correction.

A coating device and a coating method. The coating device comprises a vacuum chamber, a cathode apparatus, and an anode apparatus; a target of the cathode apparatus is rotatably mounted within the vacuum chamber; the target is insulated from the vacuum chamber; an anode body of the anode apparatus is located inside the vacuum chamber and is located on one side of the target; the anode body is arranged adjacent to a first-side track formed on the target; the anode body is insulated from the vacuum chamber; the anode body comprises a first anode and a second anode which are sequentially arranged in the axial direction of the target; the first anode and the second anode both extend in the axial direction of the target; the potential of the first anode is higher than that of the second anode; and the first anode is located on the side of the tail end of the first-side track in a drift current direction, and the second anode is located on the side of the head end of the first-side track in the drift current direction.

The invention discloses an ion-electron coupling type thermoelectric material and a preparation method thereof, and belongs to the technical field of novel thermoelectric materials. The thermoelectric material is prepared from an ion-electron conductor material and an ionic liquid phase material in a coupling mode, carriers of the thermoelectric material are ions and electrons, output voltage mainly comes from voltage generated by ionic thermal diffusion, and output current mainly comes from drift current, caused by ionic thermal diffusion, in an electron conductor. The output power of the thermoelectric material provided by the invention is several orders of magnitude higher than that of an existing ionic thermoelectric material, the problem that the output power of the existing ionic thermoelectric material is relatively low and cannot be applied is solved, and power can be supplied to daily electronic elements without increasing voltage, so that the thermoelectric material reaches the application level; the material shows huge potential in low-grade heat energy recovery close to room temperature, the preparation raw materials are wide in source, low in price and easy to obtain, the preparation method is simple, convenient and easy to operate, and the material has extremely high commercial value.

The invention relates to the field of integrated circuits, in particular to a low-temperature-drift frequency linear adjustable oscillator circuit which comprises a linear programmable low-temperature-drift current generator and a ring oscillator. The linear programmable low-temperature drift current generator generates low-temperature drift current, and the ring oscillator generates square waves according to the low-temperature drift current; according to the oscillator circuit with the linearly adjustable low-temperature-drift frequency, the oscillation frequency and the external frequency modulation resistor have a strong linear relation, square wave signals with extremely low temperature drift can be provided, it is ensured that clock signals in different temperature environments are consistent, meanwhile, the oscillation frequency can be linearly adjusted through the external resistor, and full-band low-temperature-drift output is achieved.

This invention discloses a digital closed-loop control and measurement circuit for a quartz flexible accelerometer. It includes a differential capacitor carrier demodulation and detection circuit, a low-pass filter amplifier circuit, a first A / D converter, an FPGA, a D / A converter, and a power amplifier circuit connected in sequence to achieve low-noise digital closed-loop control. The set value of the D / A converter reflects the current acceleration measurement. It also includes a sampling resistor, a zero-drift amplifier circuit, a second A / D converter, and an FPGA connected in sequence to form a zero-drift current measurement circuit driving the meter's torque coil. The measurement value of the second A / D converter also reflects the current acceleration measurement. The FPGA simultaneously obtains the set value of the D / A converter and the measurement value of the second A / D converter, digitally outputting a low-noise, zero-drift acceleration characterization value. This invention effectively solves the problems of poor temperature drift characteristics, large zero-point error, and large scale factor error in ordinary digital closed-loop quartz accelerometers, significantly improving the accuracy of digital quartz accelerometers.

The application discloses a ROVP circuit, a switching power supply controller and a switching power supply, and relates to the technical field of switching power supplies.The ROVP circuit comprises a nonlinear positive temperature drift current source circuit, a ROVP port circuit and a TOVP generator.The nonlinear positive temperature drift current source circuit outputs a nonlinear positive temperature drift current in response to a power supply signal.The ROVP port circuit converts the nonlinear positive temperature drift current into a charging current.The TOVP generator generates an overvoltage protection enable signal according to the charging current.The charging current increases in direct proportion to temperature.When the working temperature of the circuit is higher and higher, the charging current is larger and larger.The time of the overvoltage protection enable signal being a logic high pulse is shorter and shorter.Under the condition that the time of the overvoltage protection enable signal being a logic high pulse is short enough, the overvoltage protection is not triggered, and the high-temperature flash phenomenon of the lighting load driven by the switching power supply does not occur.

The present invention provides a hybrid conduction mechanism fin-gate field-effect transistor device, comprising a fin-gate field-effect transistor, a second source region, and a second drain region. The fin-gate field-effect transistor comprises a substrate, a fin-shaped channel region, a first source region, and a first drain region. The height of the second source region is not less than the height of the substrate between the first source region and the first drain region. The first source region and the first drain region are doped with first ions. The second source region is formed between the substrate and the first source region, and the second drain region is formed between the substrate and the first drain region. The second drain region and the second source region are doped with first ions and second ions, respectively. This solution solves the problem of bottom current leakage in fin-gate field-effect transistors. By adding the second source region and the second drain region, it is equivalent to connecting a tunneling field-effect transistor device structure in parallel at the bottom of the fin-gate field-effect transistor. This solution can achieve hybrid conduction of fin-channel diffusion drift current and bottom-channel band-to-band tunneling current, thereby achieving better ultra-steep switching characteristics.

The invention discloses a sapphire-based gallium nitride PHEMT design method and system and a medium, and relates to the technical field of semiconductor devices. The method comprises the following steps: acquiring relevant parameters of the sapphire-based gallium nitride PHEMT; determining the drift current density according to the related parameters; determining the temperature dependence of the sapphire-based gallium nitride PHEMT; fusing the drift current density with the temperature dependency to determine a leakage current; determining parasitic capacitance; constructing a comprehensive objective function fusing transconductance, on-resistance, stray capacitance and temperature stability by taking improvement of the performance ratio of the sapphire-based gallium nitride PHEMT as a target according to the stray capacitance, the leakage current and the drift current density; and performing maximum solution on the objective function through an optimization algorithm, determining optimal design parameters, and completing sapphire-based gallium nitride PHEMT design. According to the method, through multi-physics field coupling modeling and intelligent optimization, the problems that the temperature effect is neglected, the model is isolated and the optimization target is single in a traditional method are solved, and the high-temperature stability, the comprehensive performance and the design efficiency of the device are remarkably improved.

The invention aims to provide a brokaw reference circuit capable of simultaneously adjusting low-temperature drift voltage and low-temperature drift current. The circuit comprises at least one current amplification branch, a low-temperature drift reference circuit and a low-temperature drift reference circuit, the input end of the current amplification branch is connected with the drain electrode of the first MOS tube, and the output end of the current amplification branch is grounded through a resistor and used for adjusting the low-temperature drift current; and the plurality of current amplification branches are connected in parallel. The topological structure is simple, and the actually required bias voltage of the low-temperature drift coefficient can be obtained only by adjusting the corresponding resistance value according to the actual demand.

According to the open circuit detection circuit of the high-side switch, one end of a zero-temperature-drift current generated by a band-gap reference module is electrically connected with an internal low-voltage power supply, and the other end of the zero-temperature-drift current is electrically connected with one end of a shunt resistor and the negative input end of a source electrode input comparator; the positive input end of the source input comparator is electrically connected with the output end of the high-side switch driving chip, and the output end of the source input comparator is electrically connected with the logic control and driving module; one end of the off-chip pull-up resistor is electrically connected with the output end of the high-side switch driving chip, the other end of the off-chip pull-up resistor is electrically connected with an external power supply, and the shunt resistor is used for obtaining a detection threshold voltage based on the zero temperature drift current and the reference current; and the source input comparator is used for obtaining an output end voltage based on an external power supply voltage, an off-chip pull-up resistor and a sink current, detecting that the output end voltage is greater than a maximum value of a detection threshold voltage, and determining a load open circuit, so that the sink current is constantly equal to a reference current, and low sink current in a wide working voltage range is realized.

The application discloses a nonvolatile magnetic random storage structure and a nonvolatile magnetic random memory, wherein the storage structure comprises at least one storage unit, the storage unit comprises a first storage body, a second storage body and a switching transistor; and the magnetization states of the first storage body and the second storage body are opposite. The first end of the first storage body and the first end of the second storage body are respectively connected with the drain of the switching transistor. The second end of the first storage body is connected with a first bit line, and the second end of the second storage body is connected with a second bit line and is respectively connected to a reading circuit. The gate of the switching transistor is connected with a word line, the source of the switching transistor is connected with a source line, and the source line is connected with a first voltage generator. The scheme connects two storage bodies with opposite magnetization states in parallel, utilizes the small area proportion of the storage body, and uses one storage body as a judgment unit and the other as a reference unit, so that the influence of a single reference current on a drift current is avoided, and the sensitivity of judgment is improved.

The invention relates to a programmable temperature sensing circuit suitable for in-chip temperature measurement. The band-gap reference circuit comprises a band-gap reference which is used for generating reference voltage and reference current with zero temperature excursion; the V-I conversion circuit is used for receiving reference voltage generated by the band-gap reference and converting the reference voltage into positive temperature drift current changing along with the temperature, so that the temperature state of a chip where the V-I conversion circuit is located is represented by the positive temperature drift current; and the current operation unit is used for receiving the positive temperature drift current generated by the V-I conversion circuit and the reference current generated by the band-gap reference, and carrying out temperature calibration on the positive temperature drift current based on the digital control code and the reference current so as to generate a positive temperature drift calibration voltage corresponding to the current chip temperature after temperature calibration. The chip temperature sensing device is suitable for being integrated in a chip, can effectively sense the temperature in the chip, and improves the precision of temperature sensing in the chip and the adaptability of temperature sensing.

The invention discloses an oscillator, an audio transmission chip and electronic equipment, and relates to the technical field of semiconductor chips, the oscillator comprises a negative temperature coefficient current generation module, a zero temperature drift current generation module and an oscillation generation module; the first end of the negative temperature coefficient current generation module is connected with reference voltage, the second end of the negative temperature coefficient current generation module outputs adjustable negative temperature coefficient current, the first end of the zero temperature drift current generation module is connected with reference current, and the second end of the zero temperature drift current generation module outputs adjustable zero temperature drift current. The second end of the negative temperature coefficient current generation module is connected with the second end of the zero temperature drift current generation module and the first end of the oscillation generation module, the positive temperature coefficient current is obtained by subtracting the negative temperature coefficient current from the zero temperature drift current, the first end of the oscillation generation module is connected with the positive temperature coefficient current, and the second end outputs an oscillation signal. According to the invention, the adjustable temperature coefficient current source is constructed to control the delay of the ring oscillator, small oscillation frequency deviation can be realized in a small chip area, and the performance optimization is obvious.