18 results about "Drift current" patented technology

The invention discloses a programmable low-temperature-drift under-voltage locking circuit, and the circuit comprises a reference current generation module which is used for outputting an initial reference current, and the input end of the reference current generation module is connected with a first reference voltage; the zero-temperature-drift current source array is used for generating reference current according to the initial reference current and the second reference voltage and mirroring the reference current to a plurality of parallel branches; the trimming module is used for adjusting the total current of the parallel branches by using a programmable resistor and a capacitor; the sampling module is used for sampling the total current and the power supply voltage of the parallel branches output by the trimming module; and the comparison output module is used for comparing the power supply voltage with a sampling voltage generated according to the programmable resistor and the total current of the parallel branches, and outputting a pair of differential signals. Through the reference current generation module, the zero-temperature-drift current source array, the trimming module, the sampling network and the voltage comparator, the problems that in an existing resistance voltage division type undervoltage locking scheme, a threshold value is fixed and cannot be adjusted, and the scheme is sensitive to temperature changes are solved.

The present application relates to a current determination method, a current determination apparatus, a storage medium and an electric system. The method comprises: on the basis of temperature distribution data and a preset zero-drift compensation model, determining a zero-drift current compensation value corresponding to the temperature distribution data, wherein the temperature distribution data is used for reflecting the temperature distribution situation of a current sensor in an electric circuit, the temperature distribution data comprises temperature values of the electric circuit at a plurality of sampling parts, at least some of the sampling parts are located on the current sensor, and the zero-drift compensation model represents a correspondence between the temperature distribution data and the zero-drift current compensation value.

The invention discloses a low-temperature-drift hysteresis voltage comparator, relates to the technical field of stepping motors, and is used for solving the problem that in the prior art, the hysteresis voltage of a comparator is increased due to large temperature change of a stepping motor driving circuit, and then current control of a stepping motor is affected. Comprising a negative temperature excursion current generation module, a positive temperature excursion current generation module, a zero temperature excursion current generation module, a current operation module and a cross coupling comparison module. The cross-coupling comparison module is used for generating a hysteresis voltage based on a comparison result of the input voltage and the reference voltage; the current operation module performs weighted operation on the current generated by the negative temperature drift current generation module, the positive temperature drift current generation module and the zero temperature drift current generation module, and outputs compensation current; the compensation current is provided to the tail current source of the cross-coupling comparison module and is used for modulating the output impedance of the tail current source so as to compensate the temperature drift of the hysteresis voltage.

A high-current drift transistor (HSDT) with low losses is to be realized by having electrons with energies E <EF-kBT (EF=Fermi-Energie, kB=Boltzmann-Konstante, T=Temperatur) eines völlig gefüllten Leitungsbands eines zweidimensionalen Elektronengases (2DEG) der Dimensionen Lx·Ly in der x-y-Ebene einem Magnetfeld Bz und elektrischen Feldern Ex und Ey ausgesetzt werden, was sie alle auf eine Driftgeschwindigkeit vD in der x-y-Ebene zwingen soll. Der resultierende elektrische Driftstrom kann sehr groß werden, da er widerstandlos ist, denn die beteiligten Elektronen können nicht durch Streuung an Fehlstellen, Verunreinigungen oder Phononen gestört werden, da alle möglichen Endzustände dieser Prozesse durch andere Elektronen besetzt sind. Damit kann der HSDT sehr große elektrische Leistungen im kW-Bereich steuern.

The invention relates to the technical field of electrical measurement, in particular to a measurement method and system of a mutual inductor magnitude traceability device, electronic equipment and a medium. The method comprises the following steps: firstly, acquiring initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation mode; applying a contact pressure adjustment amount to the measurement loop contact point; acquiring compensation monitoring information after the contact pressure adjustment amount is applied; and finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stability range according to the compensation monitoring information and a rated measurement current accuracy technical index, and taking the optimal working current range, the corresponding pressure value interval and the contact resistance stability range as an operation basis of the transformer magnitude traceability device in a subsequent measurement process. In this way, the technical problem that in the prior art, it is difficult to synergistically improve the stability of a measurement loop and the traceability precision is solved, and the measurement stability, accuracy and adaptability of the mutual inductor magnitude traceability device are improved.

This invention discloses a method, apparatus, device, and storage medium for determining zero-drift current. The method includes: acquiring the voltage curve of the power circuit when the current is zero during the power-on phase, measured by a sensor; sampling the voltage curve to determine a sequence of estimated zero-drift current values; using the estimated zero-drift current values ​​in the sequence to determine the median zero-drift current estimate and the average zero-drift current estimate; under a first condition, using the median zero-drift current estimate as the zero-drift current; and under a second condition, using the average zero-drift current estimate as the zero-drift current. Using the proposed method, the zero-drift current can be accurately determined. Furthermore, this method is applicable to zero-drift compensation in different scenarios, exhibiting strong versatility.

The application provides a hybrid conduction mechanism surrounding gate transistor, which comprises a surrounding gate MOSFET device, a second source region and a second drain region; the surrounding gate MOSFET device comprises a substrate, a first source region and a first drain region; the first source region and the first drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, and the height of the second source region and the second drain region is not lower than the height of the substrate between the first source region and the first drain region; the second drain region is doped with the first ions, and the second source region is doped with second ions. The technical scheme solves the problem of bottom parasitic channel current leakage of the surrounding gate MOSFET device, and by additionally arranging the second source region and the second drain region, a tunneling field effect transistor (TFET) device structure is connected in parallel at the bottom of the traditional surrounding gate MOSFET device, so that the surrounding gate channel diffusion drift current and the bottom channel band-to-band tunneling current are hybridly conducted, and better super-steep switching characteristics are obtained.

The present application relates to the technical field of electrical measurement, and particularly relates to a measurement method and system of a mutual inductor value traceability device, an electronic device and a medium; the method comprises the following steps: firstly, obtaining initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation method; applying a contact pressure adjustment amount to the measurement loop contact point; obtaining compensation monitoring information after the contact pressure adjustment amount is applied; finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stable range according to the compensation monitoring information and a rated measurement current accuracy technical index, so as to serve as an operation basis of the mutual inductor value traceability device in a subsequent measurement process. In this way, the technical problem that the measurement loop stability and the traceability accuracy are difficult to be improved simultaneously in the prior art is solved, and the measurement stability, accuracy and adaptability of the mutual inductor value traceability device are improved.

This invention discloses an NPN-type adjustable low-temperature drift current reference circuit, comprising a startup circuit module and a current reference generation circuit module. The startup circuit module includes NMOS transistors M3, M4, M5, PMOS transistors M6 and M7, and resistor R3. The current reference generation circuit module includes PMOS transistors M1 and M2, NPN transistors Q1 and Q2, resistors R1 and R2. The NPN-type adjustable low-temperature drift current reference circuit provided by this invention reduces the temperature drift of the reference current, significantly improves the temperature coefficient, and enhances the accuracy of the current reference circuit. Furthermore, this invention only adds resistors to the circuit, making the circuit simple and easy to implement without requiring additional manufacturing processes, thus facilitating practical applications.

A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.

The application discloses a method and system for selecting a regularization parameter in Hall drift technology and electronic equipment, and relates to the technical field of on-orbit operation state monitoring of Hall thrusters. The method comprises the following steps: constructing a target function, non-negativity constraints and zero boundary constraints of a Hall thruster; setting preset values of multiple regularization parameters under the premise of meeting the non-negativity constraints and the zero boundary constraints; inputting each preset value of the regularization parameter into the target function to obtain a solving value of a corresponding Hall drift current distribution column vector; calculating a value of a corresponding pseudo semi-norm and a value of a residual norm according to the solving value of each Hall drift current distribution column vector; drawing a pseudo semi-norm-residual norm curve based on the values of all pseudo semi-norms and residual norms; and determining a target value of the regularization parameter according to the pseudo semi-norm-residual norm curve. The application improves the accuracy of Hall drift current measurement results.

The application relates to a high-precision low-temperature drift Colpitts oscillator without an off-chip crystal oscillator and a calibration method, and belongs to the technical field of oscillators. The high-precision low-temperature drift Colpitts oscillator is characterized in that it comprises a zero-temperature drift current source, an adjustable reference voltage, a comparator, a latch, a PVT detection circuit and a temperature drift calibration circuit. The zero-temperature drift current source is generated by the current generated by the combination of a band-gap reference voltage and a zero-temperature drift resistor, and then the current is used for rough adjustment of the process angle deviation through more than one high-precision current mirror. The voltage of the zero-temperature drift current source and the adjustable reference voltage are sequentially input into the PVT detection circuit and the temperature drift calibration circuit, and then compared in the comparator, and finally output to the latch to generate an oscillation frequency. Finally, the high-precision low-temperature drift clock frequency is obtained by precisely adjusting the frequency through the current generated by the band-gap reference voltage and the high-precision resistor voltage dividing network. The application provides the high-precision low-temperature drift clock frequency which can replace the off-chip quartz crystal oscillator through rough adjustment and precise adjustment of the oscillator and further online correction.

A coating device and a coating method. The coating device comprises a vacuum chamber, a cathode apparatus, and an anode apparatus; a target of the cathode apparatus is rotatably mounted within the vacuum chamber; the target is insulated from the vacuum chamber; an anode body of the anode apparatus is located inside the vacuum chamber and is located on one side of the target; the anode body is arranged adjacent to a first-side track formed on the target; the anode body is insulated from the vacuum chamber; the anode body comprises a first anode and a second anode which are sequentially arranged in the axial direction of the target; the first anode and the second anode both extend in the axial direction of the target; the potential of the first anode is higher than that of the second anode; and the first anode is located on the side of the tail end of the first-side track in a drift current direction, and the second anode is located on the side of the head end of the first-side track in the drift current direction.

The invention relates to the field of integrated circuits, in particular to a low-temperature-drift frequency linear adjustable oscillator circuit which comprises a linear programmable low-temperature-drift current generator and a ring oscillator. The linear programmable low-temperature drift current generator generates low-temperature drift current, and the ring oscillator generates square waves according to the low-temperature drift current; according to the oscillator circuit with the linearly adjustable low-temperature-drift frequency, the oscillation frequency and the external frequency modulation resistor have a strong linear relation, square wave signals with extremely low temperature drift can be provided, it is ensured that clock signals in different temperature environments are consistent, meanwhile, the oscillation frequency can be linearly adjusted through the external resistor, and full-band low-temperature-drift output is achieved.

This invention discloses a digital closed-loop control and measurement circuit for a quartz flexible accelerometer. It includes a differential capacitor carrier demodulation and detection circuit, a low-pass filter amplifier circuit, a first A / D converter, an FPGA, a D / A converter, and a power amplifier circuit connected in sequence to achieve low-noise digital closed-loop control. The set value of the D / A converter reflects the current acceleration measurement. It also includes a sampling resistor, a zero-drift amplifier circuit, a second A / D converter, and an FPGA connected in sequence to form a zero-drift current measurement circuit driving the meter's torque coil. The measurement value of the second A / D converter also reflects the current acceleration measurement. The FPGA simultaneously obtains the set value of the D / A converter and the measurement value of the second A / D converter, digitally outputting a low-noise, zero-drift acceleration characterization value. This invention effectively solves the problems of poor temperature drift characteristics, large zero-point error, and large scale factor error in ordinary digital closed-loop quartz accelerometers, significantly improving the accuracy of digital quartz accelerometers.

The application discloses a ROVP circuit, a switching power supply controller and a switching power supply, and relates to the technical field of switching power supplies.The ROVP circuit comprises a nonlinear positive temperature drift current source circuit, a ROVP port circuit and a TOVP generator.The nonlinear positive temperature drift current source circuit outputs a nonlinear positive temperature drift current in response to a power supply signal.The ROVP port circuit converts the nonlinear positive temperature drift current into a charging current.The TOVP generator generates an overvoltage protection enable signal according to the charging current.The charging current increases in direct proportion to temperature.When the working temperature of the circuit is higher and higher, the charging current is larger and larger.The time of the overvoltage protection enable signal being a logic high pulse is shorter and shorter.Under the condition that the time of the overvoltage protection enable signal being a logic high pulse is short enough, the overvoltage protection is not triggered, and the high-temperature flash phenomenon of the lighting load driven by the switching power supply does not occur.

The invention discloses a sapphire-based gallium nitride PHEMT design method and system and a medium, and relates to the technical field of semiconductor devices. The method comprises the following steps: acquiring relevant parameters of the sapphire-based gallium nitride PHEMT; determining the drift current density according to the related parameters; determining the temperature dependence of the sapphire-based gallium nitride PHEMT; fusing the drift current density with the temperature dependency to determine a leakage current; determining parasitic capacitance; constructing a comprehensive objective function fusing transconductance, on-resistance, stray capacitance and temperature stability by taking improvement of the performance ratio of the sapphire-based gallium nitride PHEMT as a target according to the stray capacitance, the leakage current and the drift current density; and performing maximum solution on the objective function through an optimization algorithm, determining optimal design parameters, and completing sapphire-based gallium nitride PHEMT design. According to the method, through multi-physics field coupling modeling and intelligent optimization, the problems that the temperature effect is neglected, the model is isolated and the optimization target is single in a traditional method are solved, and the high-temperature stability, the comprehensive performance and the design efficiency of the device are remarkably improved.

The application discloses a nonvolatile magnetic random storage structure and a nonvolatile magnetic random memory, wherein the storage structure comprises at least one storage unit, the storage unit comprises a first storage body, a second storage body and a switching transistor; and the magnetization states of the first storage body and the second storage body are opposite. The first end of the first storage body and the first end of the second storage body are respectively connected with the drain of the switching transistor. The second end of the first storage body is connected with a first bit line, and the second end of the second storage body is connected with a second bit line and is respectively connected to a reading circuit. The gate of the switching transistor is connected with a word line, the source of the switching transistor is connected with a source line, and the source line is connected with a first voltage generator. The scheme connects two storage bodies with opposite magnetization states in parallel, utilizes the small area proportion of the storage body, and uses one storage body as a judgment unit and the other as a reference unit, so that the influence of a single reference current on a drift current is avoided, and the sensitivity of judgment is improved.