11 results about "Drift current" patented technology

The invention discloses a programmable low-temperature-drift under-voltage locking circuit, and the circuit comprises a reference current generation module which is used for outputting an initial reference current, and the input end of the reference current generation module is connected with a first reference voltage; the zero-temperature-drift current source array is used for generating reference current according to the initial reference current and the second reference voltage and mirroring the reference current to a plurality of parallel branches; the trimming module is used for adjusting the total current of the parallel branches by using a programmable resistor and a capacitor; the sampling module is used for sampling the total current and the power supply voltage of the parallel branches output by the trimming module; and the comparison output module is used for comparing the power supply voltage with a sampling voltage generated according to the programmable resistor and the total current of the parallel branches, and outputting a pair of differential signals. Through the reference current generation module, the zero-temperature-drift current source array, the trimming module, the sampling network and the voltage comparator, the problems that in an existing resistance voltage division type undervoltage locking scheme, a threshold value is fixed and cannot be adjusted, and the scheme is sensitive to temperature changes are solved.

The invention relates to the technical field of electrical measurement, in particular to a measurement method and system of a mutual inductor magnitude traceability device, electronic equipment and a medium. The method comprises the following steps: firstly, acquiring initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation mode; applying a contact pressure adjustment amount to the measurement loop contact point; acquiring compensation monitoring information after the contact pressure adjustment amount is applied; and finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stability range according to the compensation monitoring information and a rated measurement current accuracy technical index, and taking the optimal working current range, the corresponding pressure value interval and the contact resistance stability range as an operation basis of the transformer magnitude traceability device in a subsequent measurement process. In this way, the technical problem that in the prior art, it is difficult to synergistically improve the stability of a measurement loop and the traceability precision is solved, and the measurement stability, accuracy and adaptability of the mutual inductor magnitude traceability device are improved.

This invention discloses a method, apparatus, device, and storage medium for determining zero-drift current. The method includes: acquiring the voltage curve of the power circuit when the current is zero during the power-on phase, measured by a sensor; sampling the voltage curve to determine a sequence of estimated zero-drift current values; using the estimated zero-drift current values ​​in the sequence to determine the median zero-drift current estimate and the average zero-drift current estimate; under a first condition, using the median zero-drift current estimate as the zero-drift current; and under a second condition, using the average zero-drift current estimate as the zero-drift current. Using the proposed method, the zero-drift current can be accurately determined. Furthermore, this method is applicable to zero-drift compensation in different scenarios, exhibiting strong versatility.

The application provides a hybrid conduction mechanism surrounding gate transistor, which comprises a surrounding gate MOSFET device, a second source region and a second drain region; the surrounding gate MOSFET device comprises a substrate, a first source region and a first drain region; the first source region and the first drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, and the height of the second source region and the second drain region is not lower than the height of the substrate between the first source region and the first drain region; the second drain region is doped with the first ions, and the second source region is doped with second ions. The technical scheme solves the problem of bottom parasitic channel current leakage of the surrounding gate MOSFET device, and by additionally arranging the second source region and the second drain region, a tunneling field effect transistor (TFET) device structure is connected in parallel at the bottom of the traditional surrounding gate MOSFET device, so that the surrounding gate channel diffusion drift current and the bottom channel band-to-band tunneling current are hybridly conducted, and better super-steep switching characteristics are obtained.

The present application relates to the technical field of electrical measurement, and particularly relates to a measurement method and system of a mutual inductor value traceability device, an electronic device and a medium; the method comprises the following steps: firstly, obtaining initial monitoring information of a mutual inductor measurement loop contact point; calculating a drift current interval by using a thermal effect intensity evaluation method; applying a contact pressure adjustment amount to the measurement loop contact point; obtaining compensation monitoring information after the contact pressure adjustment amount is applied; finally, calculating an optimal working current range, a corresponding pressure value interval and a contact resistance stable range according to the compensation monitoring information and a rated measurement current accuracy technical index, so as to serve as an operation basis of the mutual inductor value traceability device in a subsequent measurement process. In this way, the technical problem that the measurement loop stability and the traceability accuracy are difficult to be improved simultaneously in the prior art is solved, and the measurement stability, accuracy and adaptability of the mutual inductor value traceability device are improved.

This invention discloses an NPN-type adjustable low-temperature drift current reference circuit, comprising a startup circuit module and a current reference generation circuit module. The startup circuit module includes NMOS transistors M3, M4, M5, PMOS transistors M6 and M7, and resistor R3. The current reference generation circuit module includes PMOS transistors M1 and M2, NPN transistors Q1 and Q2, resistors R1 and R2. The NPN-type adjustable low-temperature drift current reference circuit provided by this invention reduces the temperature drift of the reference current, significantly improves the temperature coefficient, and enhances the accuracy of the current reference circuit. Furthermore, this invention only adds resistors to the circuit, making the circuit simple and easy to implement without requiring additional manufacturing processes, thus facilitating practical applications.

A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrate, a fin channel region, a first source region, and a first drain region; the height of the second source region is not lower than the height of the substrate between the first source region and the first drain region; the first source region the first drain region and the second drain region are doped with first ions; the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region, the second source region is doped with second ions. This scheme can realize hybrid conduction of fin channel diffusion drift current and bottom channel band-to-band tunneling current, thus obtaining better ultra-steep switching characteristics.

The application relates to a high-precision low-temperature drift Colpitts oscillator without an off-chip crystal oscillator and a calibration method, and belongs to the technical field of oscillators. The high-precision low-temperature drift Colpitts oscillator is characterized in that it comprises a zero-temperature drift current source, an adjustable reference voltage, a comparator, a latch, a PVT detection circuit and a temperature drift calibration circuit. The zero-temperature drift current source is generated by the current generated by the combination of a band-gap reference voltage and a zero-temperature drift resistor, and then the current is used for rough adjustment of the process angle deviation through more than one high-precision current mirror. The voltage of the zero-temperature drift current source and the adjustable reference voltage are sequentially input into the PVT detection circuit and the temperature drift calibration circuit, and then compared in the comparator, and finally output to the latch to generate an oscillation frequency. Finally, the high-precision low-temperature drift clock frequency is obtained by precisely adjusting the frequency through the current generated by the band-gap reference voltage and the high-precision resistor voltage dividing network. The application provides the high-precision low-temperature drift clock frequency which can replace the off-chip quartz crystal oscillator through rough adjustment and precise adjustment of the oscillator and further online correction.

The invention relates to the field of integrated circuits, in particular to a low-temperature-drift frequency linear adjustable oscillator circuit which comprises a linear programmable low-temperature-drift current generator and a ring oscillator. The linear programmable low-temperature drift current generator generates low-temperature drift current, and the ring oscillator generates square waves according to the low-temperature drift current; according to the oscillator circuit with the linearly adjustable low-temperature-drift frequency, the oscillation frequency and the external frequency modulation resistor have a strong linear relation, square wave signals with extremely low temperature drift can be provided, it is ensured that clock signals in different temperature environments are consistent, meanwhile, the oscillation frequency can be linearly adjusted through the external resistor, and full-band low-temperature-drift output is achieved.

This invention discloses a digital closed-loop control and measurement circuit for a quartz flexible accelerometer. It includes a differential capacitor carrier demodulation and detection circuit, a low-pass filter amplifier circuit, a first A / D converter, an FPGA, a D / A converter, and a power amplifier circuit connected in sequence to achieve low-noise digital closed-loop control. The set value of the D / A converter reflects the current acceleration measurement. It also includes a sampling resistor, a zero-drift amplifier circuit, a second A / D converter, and an FPGA connected in sequence to form a zero-drift current measurement circuit driving the meter's torque coil. The measurement value of the second A / D converter also reflects the current acceleration measurement. The FPGA simultaneously obtains the set value of the D / A converter and the measurement value of the second A / D converter, digitally outputting a low-noise, zero-drift acceleration characterization value. This invention effectively solves the problems of poor temperature drift characteristics, large zero-point error, and large scale factor error in ordinary digital closed-loop quartz accelerometers, significantly improving the accuracy of digital quartz accelerometers.

The application discloses a nonvolatile magnetic random storage structure and a nonvolatile magnetic random memory, wherein the storage structure comprises at least one storage unit, the storage unit comprises a first storage body, a second storage body and a switching transistor; and the magnetization states of the first storage body and the second storage body are opposite. The first end of the first storage body and the first end of the second storage body are respectively connected with the drain of the switching transistor. The second end of the first storage body is connected with a first bit line, and the second end of the second storage body is connected with a second bit line and is respectively connected to a reading circuit. The gate of the switching transistor is connected with a word line, the source of the switching transistor is connected with a source line, and the source line is connected with a first voltage generator. The scheme connects two storage bodies with opposite magnetization states in parallel, utilizes the small area proportion of the storage body, and uses one storage body as a judgment unit and the other as a reference unit, so that the influence of a single reference current on a drift current is avoided, and the sensitivity of judgment is improved.