58 results about "Drift current" patented technology

Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternating conductivity type layer formed of n drift current path regions and p partition regions arranged alternately with each other, and a breakdown withstanding region with a second alternating conductivity type layer formed of n regions and p regions arranged alternately with each other, the breakdown withstanding region providing no current path in the ON-state of the device and being depleted in the OFF-state of the device. Since depletion layers expand in both directions from multiple pn-junctions into n regions and p regions in the OFF-state of the device, the adjacent areas of p-type base regions, the outer area of the semiconductor chip and the deep area of the semiconductor chip are depleted. Thus, the breakdown voltage of breakdown withstanding region is higher than the breakdown voltage of drain drift region.

A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. The vertical MOSFET according to the invention includes an alternating-conductivity-type drain drift layer on an n⁺-type drain layer as a substrate. The alternating-conductivity-type drain drift layer is formed of n-type drift current path regions and p-type partition regions alternately arranged laterally with each other. The n-type drift current path regions and p-type partition regions extend in perpendicular to n⁺-type drain layer. Each p-type partition region is formed by vertically connecting p-type buried diffusion unit regions U_p. The n-type drift current path regions are residual regions, left after connecting p-type buried diffusion unit regions U_p, with the conductivity type thereof unchanged. The alternating-conductivity-type drain drift layer is formed by repeating the step of epitaxial layer growth and the step of implanting p-type impurity ions and by diffusing the impurity ions at once from the impurity sources located on multiple levels.

The invention relates to a temperature drift compensation optical current transformer and a current compensation method thereof, and aims to solve the problem of temperature drift influencing the measurement accuracy of the conventional optical current transformer. The temperature drift compensation optical current transformer further comprises a solenoid self-inductive sensor besides the conventional devices. An optical sensor is connected with the solenoid self-inductive sensor through a polarization maintaining fiber. The solenoid self-inductive sensor is connected with a signal processingunit through a multimode fiber. The signal processing unit is connected with the optical sensor through another multimode fiber. The temperature drift current compensation method comprises the following steps of: representing a Faraday angle of optical rotation generated by the linearly polarized light of the optical sensor by using current to be tested; representing a Faraday angle of optical rotation generated by the linearly polarized light of the solenoid self-inductive sensor by using offset current; deducing an output voltage expression according to an expression for the angle of optical rotation; and performing demonstration to realize the measurement of primary current. The temperature drift compensation optical current transformer and the current compensation method thereof are applied to the current measurement of a power system.

A method and circuit for frequency synthesis using a low drift current controlled oscillator configured to provide a wide output frequency and high accuracy are provided. An exemplary frequency synthesis circuit is configured for programmable control of a center frequency of the current controlled oscillator to provide a wide range of output frequencies with high accuracy. In accordance with an exemplary embodiment of the present invention, an exemplary circuit comprises a phase-locked loop (PLL) circuit comprising a phase detector, a charge pump, a current controlled oscillator and a divider circuit. For programmable control of the current controlled oscillator, the PLL circuit further comprises a trim digital-to-analog converter (DAC) configured to provide a trimmed current signal for control of the current controlled oscillator. In accordance with an exemplary embodiment of the present invention, trim values for operation of the trim DAC can be suitably located within a trim register of flash memory, such as programmable flash memory within any mixed-signal device or system.

A pressure gradient sensor for seismic and other applications utilizing the principle of diamagnetic drift. The sensor comprises at least one transducer, each transducer made of or containing a medium having at least one species of mobile charged particles such as electrons or holes that exhibit diamagnetic drift under a pressure gradient. A magnet and a pair of electrodes are installed in each transducer. Diamagnetic drift current collected by the electrodes can be measured by an ammeter or similar device, and formulas and methods are disclosed to determine the pressure gradient from the measured current.

A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n⁺-type source region and a p⁺-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.

The invention discloses a method for eliminating motor phase current temperature drift in a real-time way. In the method, a current sensor is adopted to acquire motor phase current, and an acquisition signal is processed via a proportion amplification module and a digital signal processing module; when a sampling system is electrified, an initial sampling value of the sampling system is calculated via the digital signal processing module so that motor initial zero offset current is obtained; and with continuous operation of the motor, temperature rises, motor three-phase zero offset current changes, the sampling system acquires motor three-phase current in the real-time way and performs corresponding calculation so that motor phase current secondary zero offset current is obtained, and when the system normally operates, the sampling value is processed and calculated via the proportion amplification module and the digital signal processing module, a DC component caused by temperature drift is eliminated, and practical phase current is obtained. phase current temperature drift can be detected in the real-time way by the method, and temperature drift current in the acquired motor phase current can be eliminated so that an instability phenomenon of the system caused by temperature rise is overcome, stability of the motor control system is guaranteed, and reliable operation of the motor is ensured.

The invention relates to a method for estimating the SOC (State of Charge) of a lithium battery under the consideration of drift current value in a sensor. The method comprises the following steps: fitting the relationship between different temperatures and actual discharge capacity, and fitting the relationship between different discharge rates and the actual discharge capacity; estimating a current SOC with a Drift-Ah integral method as a state module, establishing a battery voltage-SOC-current function relationship, and discretizing the function relationship to obtain a system state equation; and carrying out a discharge experiment on the battery in an environment of 20+/2 DEG C, and estimating the SOC with an SCKF algorithm. The SOC can be estimated more accurately under the consideration of the influences of the two parameters of different temperatures and different discharge rates on battery capacity. Low, medium and high models are set under the consideration of the changes of SOC model parameters, so that the estimation accuracy is improved. The influence of drift current on the estimation accuracy can be reduced effectively, and the SOC of a power battery can be estimatedmore accurately.

The invention discloses a current drift correction method, system and device for a battery management system. The method includes the following steps that: temperature drift correction is performed onthe measurement result of a current sensor to obtain temperature drift-corrected current; a battery model is established, the voltage residual of the voltage of the battery model and the actual measured voltage of a battery is calculated; the drift current of the current sensor is calculated according to the calculated voltage residual; and the temperature drift-corrected current and the drift current of the current sensor are added up, so that the current real value of the battery management system is obtained. The system includes a temperature drift correction module, a voltage residual calculation module, a drift current calculation module, and a current real value acquisition module. The device includes a memory and a processor. According to the current drift correction method, systemand device of the present invention, the closed-loop correction of the current of the current motor is realized according to the current real value which is obtained by adding up the temperature drift-corrected current and the drift current, and therefore, the current drift correction method, system and device of the invention have the advantages of small measurement error, high robustness and high compatibility, and can be widely applied to the battery balance field.

A zero temperature drift current source circuit insensitive to a power supply comprises an NJFET, triodes of NPN1, NPN2, NPN3 and NPN4, triodes of PNP1, PNP2 and PNP3, and resistors of R1, R2 and R3,wherein when VCC rises from 2.5 voltages to 40 voltages, the starting current I0 of the NJFET is fixed and the resistor R1 is an adjustable positive temperature coefficient resistor, the product ratioof the numbers of emitter areas of NPN1 and NPN2 is A1, the product ratio of the numbers of emitter areas of NPN4 and NPN3 is A2, A1*A2 is larger than 1, and the temperature coefficient of R1 can beadjusted through process, the zero temperature drift current source circuit can be designed. The magnitude of the current source reference current IR is completely dependent on the resistance values of A1, A2 and R1, the current source reference current IR and the current source output current IOUT do not change with the change of VCC.

The present invention provides an accurate and high-precision semiconductor device simulation method that is directed toward an electronic device whose physicality is not isotropic because the mobility of an organic thin film transistor, that employs an organic semiconductor, and the like, is highly dependent on field strength. In a semiconductor device simulation method which divides a semiconductor device of a two-dimensional structure or three-dimensional structure into meshes, and solves physical equations such as a potential equation and a carrier transport equation, for the meshes, a drift current resulting from an electric field and a diffusion current caused by a carrier density gradient are handled separately.

A memory apparatus may be provided. The memory apparatus may include a global bit line configured to receive a drift current. A voltage clamping circuit configured to limit a voltage level of the global bit line.

The invention discloses an underwater node location prediction method of an underwater sensor network with fixed depth. The method is suitable for a three-dimensional underwater sensor network with fixed node depth, and comprises the following steps: a mobile sink on the water surface performs positioning through a satellite positioning system to compute water velocity and deviation angle, and theinformation is cyclically broadcasted to a buoy node, the buoy node forwards the information to a water node again; the water node uses a Ekman drift current model to compute the water velocity and deviation angle at the located depth; and the drift displacement is finally obtained to predict the location information. In comparison with the conventional ranging-based underwater positioning method, the location information broadcast behavior of the buoy node can be reduced, and the energy loss is reduced.

The invention provides a modeling method capable of simulating a single-particle pulse long tail effect. The method comprises the steps of enabling high-energy particles to be shot into a channel region of a metal oxide semiconductor (MOS) tube which is in an off state, enabling a great deal of ionized electron hole pairs to form transient current pulse under the action of an electric field, analyzing the drifting process of the electron hole pairs in a reverse bias PN junction space charge region formed in body drain, and establishing a preliminary drift current analytical model with constant node voltage, wherein the model is I(t)=I0*(e<-alpha t>-e<-beta t>); carrying out analytic calculation to obtain an expression of pulse peak value I0; adding a model for describing the change of node voltage, wherein the model is expressed by the square root of r (V(t)+Vd); representing the relationship between the node voltage and transient current, wherein a current source model of single-particle transient current pulse is as follows: I(t) is equal to I0 is multiplied by the square root of r (V(t)+Vd) and (e<-alpha t>-e<-beta t>). The current source model of single-particle transient current pulse established by the modeling method capable of simulating the single-particle pulse long tail effect is capable of accurately fitting the long tail effect of single-particle transient pulse, thus having important reference significance for the reinforcing design of an anti-radiation circuit.

A voltage reference circuit with a high power supply rejection ratio comprises a starting module, a zero temperature drift current generation module and an active attenuator module; the starting module reduces a first node potential in the zero temperature drift current generation module when a power supply voltage is established, so that the voltage reference circuit is separated from a zero state, quits working after starting is completed, and the current consumption is reduced to be extremely low; the zero temperature drift current generation module clamps the loop current at a zero temperature drift point through an operational amplifier so as to generate zero temperature drift current, and outputs the zero temperature drift current to the active attenuator module through a current mirror. According to the invention, the introduced current source structure composed of the active attenuator, the second PMOS transistor and the third PMOS transistor and the operational amplifier closed-loop circuit both improve the power supply rejection ratio of the voltage reference circuit, and the active attenuator module converts zero temperature drift current into zero temperature drift voltage through the reference NMOS transistor in diode connection. Meanwhile, a reference voltage is output through a resistance voltage division network formed by a second resistor and a third resistor,and the power supply rejection ratio is further increased.

The invention discloses a wide base region lumped electric charge modeling method for a large-power bipolar semiconductor device. A wide base region is divided into n areas with equal width, and n pieces of lumped electric charges are adopted for independently expressing electric charge distribution in the n pieces of areas, wherein n is greater than or equal to 3; according to the electric chargedistribution of the area and an electric charge motion mechanism, drift current and diffusion current are defined; through a current density equation, hole current and electron current between adjacent areas are determined; according to a current continuity equation, recombination current caused by electric charges in each area is determined; and the hole current, the electron current and the recombination current are taken as a basis to establish a wide base region lumped electric charge model. By use of the method, the simulation accuracy of the wide base region lumped electric charge modelis improved, and therefore, the accurate calculation of an electric charge quantity in the wide base region of the large-power bipolar semiconductor device under multiple working conditions is realized.

The invention discloses an adjusting method of drift angles of a plurality of TDI (Time Delayed and Integration)-CCD (Charge Coupled Device) cameras spliced in a staggered manner. The adjusting method comprises the following steps: step 101: measuring to obtain overlap joint image element column n of two adjacent TDI-CCDs when the drift angle is zero; step 102: calculating the image element column number m of repeated images shot by the two adjacent TDI-CCDs; and the step 103: adjusting a drift current adjusting mechanism so as to enable the image element column number m of the repeated images to tend to be identical to the overlap joint image element column number n. According to the adjusting method, the calibration of an intermediate link can be avoided, the tail end of an imaging link, namely an image, is directly processed firstly, the drift angles are adjusted by calculating the overlap joint image element column number between the two TDI-CCDs, the realization is simple, and the drift current adjusting speed is quick, so that the adjusting method is extremely suitable for being used in imaging experiment of a ground turntable of the TDI-CCDs.

The invention discloses a low-temperature-drift high-accuracy current source suitable for any resistor type. The current source comprises a band-gap reference circuit and a current source generation circuit, the band-gap reference circuit generates band-gap reference voltage and is composed of MOS transistors M1, M2 and M3, PNP transistors Q1 and Q2 and resistors R1, R2 and R3, the current sourcegeneration circuit generates a low-temperature-drift current source and comprises a MOS transistor M4, a source electrode of the MOS transistor M4 is connected with a power source VCC while a grid electrode of the same is connected with that of the MOS transistor M3, and a drain electrode of the MOS transistor M4 generates a low-temperature-drift current source Iref. According to the principle ofband-gap reference, thermal voltage VT and PN node voltage VBE can be combined freely to obtain temperature coefficient similar to a process intrinsic resistor so as to quite conveniently obtain the low-temperature-drift current source which is completely independent from resistors with any specific temperature coefficient, and the current source and a voltage source with low temperature drift arerealized.

The invention relates to the technical field of novel green renewable energy source acquisition. The invention discloses a flexible direct-current generator based on an organic semiconductor film. Theflexible direct-current generator is mainly composed of two kinds of organic semiconductor films on a flexible substrate. The Fermi energy levels of the two films are different, so when mutual contact occurs, space charges are charged to form a depletion layer, balance between diffusion current and drift current in a junction region is broken during relative sliding, the depletion layer is broken, junction region charges are discharged, and the charges are separated in an accelerated mode under the action of a built-in electric field, so that electron holes are well collected, accumulated andoutput current and voltage at an electrode, and continuous direct-current output is generated. The organic semiconductor film is an efficient hole or electron transport layer and can effectively transport hot carriers, so that mechanical energy is converted into high-voltage and high-density electric energy to be output, and power is directly supplied to various electronic devices and products.