Modeling method capable of simulating single-particle pulse long tail effect

Abstract

The invention provides a modeling method capable of simulating a single-particle pulse long tail effect. The method comprises the steps of enabling high-energy particles to be shot into a channel region of a metal oxide semiconductor (MOS) tube which is in an off state, enabling a great deal of ionized electron hole pairs to form transient current pulse under the action of an electric field, analyzing the drifting process of the electron hole pairs in a reverse bias PN junction space charge region formed in body drain, and establishing a preliminary drift current analytical model with constant node voltage, wherein the model is I(t)=I0*(e<-alpha t>-e<-beta t>); carrying out analytic calculation to obtain an expression of pulse peak value I0; adding a model for describing the change of node voltage, wherein the model is expressed by the square root of r (V(t)+Vd); representing the relationship between the node voltage and transient current, wherein a current source model of single-particle transient current pulse is as follows: I(t) is equal to I0 is multiplied by the square root of r (V(t)+Vd) and (e<-alpha t>-e<-beta t>). The current source model of single-particle transient current pulse established by the modeling method capable of simulating the single-particle pulse long tail effect is capable of accurately fitting the long tail effect of single-particle transient pulse, thus having important reference significance for the reinforcing design of an anti-radiation circuit.

Description

technical field [0001] The invention relates to the field of single-event effect research, in particular to a modeling method for simulating single-event pulse long-tail effect. Background technique [0002] The single event effect refers to a radiation effect that causes abnormal changes in the state of the device when a single high-energy particle passes through the sensitive area of ​​the microelectronic device, including single event upset (Single event upset), single event lockup (Single event latchup), single event function interruption, Single event transient pulse (Signal event transient, SET), single event multi-bit flip, single event burnout (Single event burnout), single event gate breakdown (Single event gate breakdown), single event disturbance and single event hard error, etc. [0003] The single event effect is one of the main radiation effects that induce abnormalities in electronic equipment. The most frequent occurrences in integrated circuits are the singl...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a modeling method for simulating the long-tail effect of single event pulses, which is used to solve the problem that the double-exponential pulse current source model in the prior art cannot fit single event transients. The problem of the long tail effect of the pulse

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